TRANSPARENT CONDUCTIVE ELECTRODE FOR THREE DIMENSIONAL PHOTOVOLTAIC DEVICE
    24.
    发明申请
    TRANSPARENT CONDUCTIVE ELECTRODE FOR THREE DIMENSIONAL PHOTOVOLTAIC DEVICE 审中-公开
    用于三维光电器件的透明导电电极

    公开(公告)号:US20140004648A1

    公开(公告)日:2014-01-02

    申请号:US13535868

    申请日:2012-06-28

    IPC分类号: H01L31/18

    摘要: A method for forming a photovoltaic device includes forming a plurality of three-dimensional structures in a substrate to form a textured profile. A first transparent electrode layer is formed on the structures from a transparent conductive oxide having a metal dopant and deposited at a thickness configured to maintain the textured profile. The first transparent electrode layer is annealed to increase conductivity and transmittance. A continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer is formed on the first transparent electrode layer. A second electrode layer is deposited over the photovoltaic stack.

    摘要翻译: 形成光伏器件的方法包括在衬底中形成多个三维结构以形成纹理轮廓。 在具有金属掺杂剂的透明导电氧化物的结构上形成第一透明电极层,并以构造成保持纹理轮廓的厚度沉积。 对第一透明电极层进行退火以增加导电性和透射率。 包括N型层,P型层和本征层的连续光伏堆叠形成在第一透明电极层上。 在光伏堆栈上沉积第二电极层。

    Mixed temperature deposition of thin film silicon tandem cells
    28.
    发明授权
    Mixed temperature deposition of thin film silicon tandem cells 有权
    薄膜硅串联电池的混合温度沉积

    公开(公告)号:US08859321B2

    公开(公告)日:2014-10-14

    申请号:US13017671

    申请日:2011-01-31

    摘要: Fabrication of a tandem photovoltaic device includes forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. A top cell is formed relative to the bottom cell. The top cell has an N-type layer, a P-type layer and a top intrinsic layer therebetween. The top intrinsic layer is formed of an undoped material deposited at a temperature that is different from the bottom intrinsic layer such that band gap energies for the top intrinsic layer and the bottom intrinsic layer are progressively lower for each cell.

    摘要翻译: 串联光伏器件的制造包括在其间形成具有N型层,P型层和底部本征层的底部电池。 相对于底部单元形成顶部单元。 顶部单元具有N型层,P型层和顶层本征层。 顶部本征层由在不同于底部本征层的温度沉积的未掺杂材料形成,使得顶部本征层和底部本征层的带隙能量对于每个单元而言逐渐降低。