摘要:
A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.
摘要:
An electronic device includes a substrate and a plurality of particles anchored to the substrate. An electrode material is formed over the particles and configured to form peaks over the particles. One or more operational layers are fog led over the electrode material for performing a device function.
摘要:
Fabrication of a tandem photovoltaic device includes forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. A top cell is formed relative to the bottom cell. The top cell has an N-type layer, a P-type layer and a top intrinsic layer therebetween. The top intrinsic layer is formed of an undoped material deposited at a temperature that is different from the bottom intrinsic layer such that band gap energies for the top intrinsic layer and the bottom intrinsic layer are progressively lower for each cell.
摘要:
A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.
摘要:
An electronic device includes a substrate and a plurality of particles anchored to the substrate. An electrode material is formed over the particles and configured to form peaks over the particles. One or more operational layers are fog led over the electrode material for performing a device function.
摘要:
Methods for forming a photovoltaic device include adjusting a deposition power for depositing a buffer layer including germanium on a transparent electrode. The deposition power is configured to improve device efficiency. A p-type layer is formed on the buffer layer. An intrinsic layer and an n-type layer are formed over the p-type layer.
摘要:
A device and method for reducing degradation in a photovoltaic device includes adjusting a band offset of the device during one or more of forming an electrode, forming a first doped layer or forming an intrinsic layer. The adjusting reduces a band offset between one or more of the electrode, the first doped layer and the intrinsic layer to reduce light-induced degradation of the device. A second doped layer is formed on the intrinsic layer.
摘要:
A method of producing a photovoltaic device includes providing a stretchable substrate for the photovoltaic device; and stretching the substrate to produce a stretched substrate. The method further includes depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device.
摘要:
A photovoltaic device and method include a doped transparent electrode, and a light-absorbing semiconductor structure including a first semiconductor layer. An ultra-thin layer of a non-transparent metal is formed between the transparent electrode and the first semiconductor layer to form a reduced barrier contact wherein the ultra-thin layer is light transmissive. When the ultrathin metal forms discrete individual dots, it permits a plasmonic light trapping effect to increase the current at solar cells.
摘要:
A method of producing a photovoltaic device includes providing a stretchable substrate for the photovoltaic device; and stretching the substrate to produce a stretched substrate. The method further includes depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device.