摘要:
When pixels are simply skipped while keeping both an order of pixel information and a spatial positional relation the same as those in all-pixel readout, since a distance between pixels to be read out increases, the Nyquist frequency decreases and aliasing noise increases. A 5×5 pixel block is set as a unit pixel block and pieces of pixel information in first, third, and fifth columns of first, third, and fifth rows of a pixel arrangement are added and outputted as an output in an ath row and an ath column of the unit pixel block. Then, pieces of pixel information in sixth, eighth, and tenth columns of the first, the third, and the fifth rows of the pixel arrangement are added and outputted as an output in the ath row and a bth column of the unit pixel block. Subsequently, pieces of pixel information are added and outputted up to a last column or a column near the last column. Thereafter, pieces of pixel information in the first, the third, and the fifth columns of the sixth, the eighth, and the tenth rows of the pixel arrangement are added and outputted as an output in a bth row and the ath column of the unit pixel block. Subsequently, all arbitrary pixels are read out while repeating the same operation and skipping and adding pieces of pixel information.
摘要:
A wafer of the invention is a silicon wafer of 0.02 &OHgr;cm or less in resistivity for deposition of an epitaxial layer, and the number of crystal originated particles (COP) and the number of interstitial-type large dislocation loops (L/D) are respectively 0 to 10 per wafer. A wafer of the invention is an epitaxial wafer having an epitaxial layer being 0.1 &OHgr;cm or more in resistivity and 0.5 to 5 &mgr;m in thickness formed on this wafer by means of a CVD method. A wafer of the invention is OSF-free and hardly makes traces of COP and L/D appear on the surface of an epitaxial layer when the epitaxial layer is formed. By heat treatment in a semiconductor device manufacturing process after the epitaxial layer is formed, BMDs occur uniformly and highly in density in the wafer and a uniform IG effect can be obtained in the wafer.
摘要:
An image processing apparatus and method and a recording medium therefor control the occurrence of a change in a hue. The histogram of a luminance signal Y is generated in a first step S1. In a second step S2, the histograms of the luminance signals Y are accumulated to generate a cumulative histogram, and the cumulative histogram is subjected to logarithmic approximation thereby to generate a lookup table (LUT) for correcting luminance signals. In a third step S3, a color-difference signal correction parameter LUT is generated by referring to the LUT for correcting luminance signals. In a fourth step S4, an input luminance signal Y is applied to the LUT for correcting luminance signals thereby to acquire a corrected luminance signal Y0. In a fifth step S5, the input luminance signal Y is applied to a color-difference signal correction parameter LUT so as to acquire a correction parameter k. In a sixth step S6, input color-difference signals Cr and Cb are multiplied by the correction parameter k to acquire corrected color-difference signals Cr0 and Cb0.
摘要:
The present invention provides a method of writing at least a first pattern on a first region of a resist by a variable shaped electron beam exposure. The resist has at least a second region on which at least a second pattern is written by one-shot electron beam exposure. The second region is bounded by a boundary line with the first region so that the fist and second patterns are bounded by the boundary line with each other. The method comprises the steps of: setting a re-size amount; re-sizing a calibrated size of a variable shaped electron beam by a first amount which is smaller than the re-size amount; and shifting an origin for a shot of the variable shaped electron beam by a second amount which is substantially equal to a subtraction of the first amount from the re-size amount before a variable shaped electron beam shot is made.
摘要:
In a method of forming a mask from a design pattern, a mask pattern is repeated in the design pattern and is checked about whether or not the mask pattern has the same line width at a border. If the mask pattern having the same line width is divided, a portion having the same line width adjacent to the border is removed from the mask pattern. The removed mask pattern is actually used as the mask for the electron beam exposure.As a result, when electron beam exposure is made by the use of the mask, exposed patterns are partially overlapped with each other at adjacent ones of the exposed patterns and contiguous to each other at portions having different line widths. With this structure, the electron beam exposure is performed without registration errors between the exposed patterns contiguous to each other.
摘要:
In an ozonized water producing apparatus in which a pressurized ozone gas generated by an electric discharge type ozonizer is dissolved in water to be treated through a porous hollow-fiber membrane, an infinite variable-speed control type pump is provided upstream of the hollow-fiber membrane to maintain the water pressure inside the hollow fibers higher than the ozone gas pressure and to control the water pressure and flow rate, and a control mechanism is provided to control the ozone concentration in the treated water on the basis of the ozone gas concentration. Thereby treated water containing neither tiny bubbles nor impurities is obtained, and the concentration, flow rate and pressure of the treated water are controlled at constant levels.
摘要:
An electron beam exposure apparatus includes an electron beam generating section for generating a beam composed of electrons accelerated with a predetermined acceleration voltage, and a stage for mounting thereon a semiconductor wafer or reticle to be exposed by the electron beam. The stage includes a reference marker composed of a base section and a projection section. The base section is formed of a thin film of first conductive element having an atomic number greater than that of a material of the stage and has a first thickness through which more than 70% electrons in the beam can transmit and the projection section is formed of a bulk of second conductive element having an atomic number equal to or greater than that of the material of the stage and has a second thickness thicker than a maximum traveling distance of the electrons of the beam into the projection section. The electron beam exposure apparatus further includes an optical system for adjusting a deflection of the electron beam and a size of electron beam, and a detecting section for detecting electrons from the reference marker of the stage when the electron beam is irradiated on the reference marker of the stage in a calibration mode.
摘要:
An image-processing apparatus for processing images, whereby the image-processing apparatus includes an image capture unit, a filter, and an extraction unit. The image capture unit acquires image signals composed of multiple color components of a 2×2 color-coding array. The filter then calculates an average pixel value associated with any (2n−1) pixels acquired by the image capture unit, whereby each of the filtered (2n−1) pixels include a target pixel and adjacent pixels having the same color component as that of the target pixel, and the calculated average is designated as the average of the target pixel and the adjacent pixels. At the extraction unit the pixel having the average calculated by the filter as the pixel value is extracted at an extraction rate of 1/(2n−1), where n is a positive integer value.
摘要:
A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a neck having a tapered portion and a constant diameter portion, then pulling a silicon single crystal. The atmosphere used during neck formation is a hydrogen-containing atmosphere prepared by adding a hydrogen-containing substance to an inert gas. The hydrogen-containing substance has a hydrogen gas equivalent concentration in the hydrogen-containing atmosphere of 3 to 20%.
摘要:
An imaging apparatus for performing efficient signal processing depending on the operational mode. In the finder mode, a CCD interface 21a decimates horizontal components of image data supplied from an image generating unit 10 to one-third and moreover processes the decimated image data with data conversion and resolution conversion to produce Y, Cb and Cr image data which are routed to and written in an image memory 32 over a memory controller 22. In the recording mode, the CCD interface 21a causes the image data from the image generating unit 10 to be written in the image memory 32 via memory controller 22 after decimation and gamma correction etc. The camera DSP 21c reads out the image data via memory controller 22 from the image memory 32 to effect data conversion for writing the resulting data via memory controller 22 in the image memory 32.