Solid-state image pickup device and drive method thereof
    21.
    发明申请
    Solid-state image pickup device and drive method thereof 失效
    固体摄像装置及其驱动方法

    公开(公告)号:US20060203113A1

    公开(公告)日:2006-09-14

    申请号:US10545740

    申请日:2004-02-20

    IPC分类号: H04N3/14 H04N5/335

    摘要: When pixels are simply skipped while keeping both an order of pixel information and a spatial positional relation the same as those in all-pixel readout, since a distance between pixels to be read out increases, the Nyquist frequency decreases and aliasing noise increases. A 5×5 pixel block is set as a unit pixel block and pieces of pixel information in first, third, and fifth columns of first, third, and fifth rows of a pixel arrangement are added and outputted as an output in an ath row and an ath column of the unit pixel block. Then, pieces of pixel information in sixth, eighth, and tenth columns of the first, the third, and the fifth rows of the pixel arrangement are added and outputted as an output in the ath row and a bth column of the unit pixel block. Subsequently, pieces of pixel information are added and outputted up to a last column or a column near the last column. Thereafter, pieces of pixel information in the first, the third, and the fifth columns of the sixth, the eighth, and the tenth rows of the pixel arrangement are added and outputted as an output in a bth row and the ath column of the unit pixel block. Subsequently, all arbitrary pixels are read out while repeating the same operation and skipping and adding pieces of pixel information.

    摘要翻译: 当像素被简单地跳过同时保持像素信息的顺序和空间位置关系与全像素读出中的顺序相同时,由于要读出的像素之间的距离增加,所以奈奎斯特频率降低并且混叠噪声增加。 将5×5像素块设置为单位像素块,并且将像素布置的第一,第三和第五行的第一,第三和第五列中的像素信息的像素信息相加并输出为运动行中的输出,并且运动 单位像素块的列。 然后,将像素配置的第一,第三和第五行的第六列,第八列和第五列中的像素信息的像素信息相加并输出为单位像素块的运动行和第b列中的输出。 随后,将像素信息添加并输出到最后一列或靠近最​​后一列的列。 此后,将像素配置的第六行,第八行和第十行的第一列,第三列和第五列中的像素信息相加并输出为第b行的输出和单元的运动列 像素块。 随后,在重复相同的操作并跳过和添加像素信息的同时读出所有任意像素。

    Epitaxial wafer
    22.
    发明授权
    Epitaxial wafer 有权
    外延晶圆

    公开(公告)号:US06818197B2

    公开(公告)日:2004-11-16

    申请号:US10390941

    申请日:2003-03-18

    IPC分类号: C01B3326

    摘要: A wafer of the invention is a silicon wafer of 0.02 &OHgr;cm or less in resistivity for deposition of an epitaxial layer, and the number of crystal originated particles (COP) and the number of interstitial-type large dislocation loops (L/D) are respectively 0 to 10 per wafer. A wafer of the invention is an epitaxial wafer having an epitaxial layer being 0.1 &OHgr;cm or more in resistivity and 0.5 to 5 &mgr;m in thickness formed on this wafer by means of a CVD method. A wafer of the invention is OSF-free and hardly makes traces of COP and L/D appear on the surface of an epitaxial layer when the epitaxial layer is formed. By heat treatment in a semiconductor device manufacturing process after the epitaxial layer is formed, BMDs occur uniformly and highly in density in the wafer and a uniform IG effect can be obtained in the wafer.

    摘要翻译: 本发明的晶片是用于沉积外延层的电阻率为0.02Ω·cm以下的硅晶片,并且晶体起始粒子(COP)的数量和间隙型大位错环(L / D)的数量分别为 每片晶片为0〜10。 本发明的晶片是通过CVD方法在该晶片上形成的外延层的外延层的电阻率为0.1μΩ·m以上,厚度为0.5〜5μm的外延片。 当形成外延层时,本发明的晶片是无OSF的,并且几乎不产生COP和L / D的痕迹出现在外延层的表面上。 通过在形成外延层之后的半导体器件制造工艺中的热处理,BMD在晶片中的密度均匀且高度地发生,并且可以在晶片中获得均匀的IG效应。

    Image processing apparatus and method, and recording medium therefor
    23.
    发明授权
    Image processing apparatus and method, and recording medium therefor 失效
    图像处理装置和方法及其记录介质

    公开(公告)号:US06781595B2

    公开(公告)日:2004-08-24

    申请号:US10035711

    申请日:2001-10-22

    IPC分类号: G09G502

    摘要: An image processing apparatus and method and a recording medium therefor control the occurrence of a change in a hue. The histogram of a luminance signal Y is generated in a first step S1. In a second step S2, the histograms of the luminance signals Y are accumulated to generate a cumulative histogram, and the cumulative histogram is subjected to logarithmic approximation thereby to generate a lookup table (LUT) for correcting luminance signals. In a third step S3, a color-difference signal correction parameter LUT is generated by referring to the LUT for correcting luminance signals. In a fourth step S4, an input luminance signal Y is applied to the LUT for correcting luminance signals thereby to acquire a corrected luminance signal Y0. In a fifth step S5, the input luminance signal Y is applied to a color-difference signal correction parameter LUT so as to acquire a correction parameter k. In a sixth step S6, input color-difference signals Cr and Cb are multiplied by the correction parameter k to acquire corrected color-difference signals Cr0 and Cb0.

    摘要翻译: 一种图像处理装置和方法及其记录介质,用于控制色相变化的发生。 在第一步骤S1中生成亮度信号Y的直方图。 在第二步骤S2中,累积亮度信号Y的直方图以生成累积直方图,并对累积直方图进行对数近似,从而生成用于校正亮度信号的查找表(LUT)。 在第三步骤S3中,通过参考用于校正亮度信号的LUT来生成色差信号校正参数LUT。 在第四步骤S4中,输入亮度信号Y被施加到用于校正亮度信号的LUT,从而获得校正的亮度信号Y0。 在第五步骤S5中,将输入亮度信号Y施加到色差信号校正参数LUT,以获得校正参数k。 在第六步骤S6中,输入色差信号Cr和Cb与校正参数k相乘以获得校正色差信号Cr0和Cb0。

    Method of writing any patterns on a resist by an electron beam exposure
and electron beam exposure system
    24.
    发明授权
    Method of writing any patterns on a resist by an electron beam exposure and electron beam exposure system 失效
    通过电子束曝光和电子束曝光系统在抗蚀剂上写任何图案的方法

    公开(公告)号:US06093932A

    公开(公告)日:2000-07-25

    申请号:US114912

    申请日:1998-07-14

    申请人: Ken Nakajima

    发明人: Ken Nakajima

    摘要: The present invention provides a method of writing at least a first pattern on a first region of a resist by a variable shaped electron beam exposure. The resist has at least a second region on which at least a second pattern is written by one-shot electron beam exposure. The second region is bounded by a boundary line with the first region so that the fist and second patterns are bounded by the boundary line with each other. The method comprises the steps of: setting a re-size amount; re-sizing a calibrated size of a variable shaped electron beam by a first amount which is smaller than the re-size amount; and shifting an origin for a shot of the variable shaped electron beam by a second amount which is substantially equal to a subtraction of the first amount from the re-size amount before a variable shaped electron beam shot is made.

    摘要翻译: 本发明提供一种通过可变形电子束曝光在抗蚀剂的第一区域上写入至少第一图案的方法。 抗蚀剂具有至少第二区域,在其上通过单次电子束曝光写入至少第二图案。 第二区域由与第一区域的边界线限制,使得第一和第二图案由边界线彼此界定。 该方法包括以下步骤:设置重量大小; 将可变形状电子束的校准尺寸重新调整小于重量尺寸量的第一量; 并且将可变形电子束的镜头的原点移动第二量,该第二量基本上等于在进行可变形状的电子束射击之前从重新尺寸量减去第一量。

    Electron beam exposure utilizing pre-processed mask pattern
    25.
    发明授权
    Electron beam exposure utilizing pre-processed mask pattern 有权
    使用预处理的掩模图案的电子束曝光

    公开(公告)号:US6010827A

    公开(公告)日:2000-01-04

    申请号:US291979

    申请日:1999-04-15

    申请人: Ken Nakajima

    发明人: Ken Nakajima

    摘要: In a method of forming a mask from a design pattern, a mask pattern is repeated in the design pattern and is checked about whether or not the mask pattern has the same line width at a border. If the mask pattern having the same line width is divided, a portion having the same line width adjacent to the border is removed from the mask pattern. The removed mask pattern is actually used as the mask for the electron beam exposure.As a result, when electron beam exposure is made by the use of the mask, exposed patterns are partially overlapped with each other at adjacent ones of the exposed patterns and contiguous to each other at portions having different line widths. With this structure, the electron beam exposure is performed without registration errors between the exposed patterns contiguous to each other.

    摘要翻译: 在从设计图案形成掩模的方法中,在设计图案中重复掩模图案,并且检查掩模图案是否在边界处具有相同的线宽。 如果具有相同线宽的掩模图案被分割,则与掩模图案相邻的具有与边界相邻的线宽的部分被去除。 去除的掩模图案实际上用作电子束曝光的掩模。 结果,当通过使用掩模进行电子束曝光时,暴露图案在相邻的曝光图案处彼此部分地重叠,并且在具有不同线宽的部分处彼此邻接。 利用这种结构,在彼此相邻的曝光图案之间执行电子束曝光而没有配准误差。

    Method of and apparatus for producing ozonized water
    26.
    发明授权
    Method of and apparatus for producing ozonized water 失效
    生产臭氧水的方法和设备

    公开(公告)号:US5670094A

    公开(公告)日:1997-09-23

    申请号:US590361

    申请日:1996-01-25

    摘要: In an ozonized water producing apparatus in which a pressurized ozone gas generated by an electric discharge type ozonizer is dissolved in water to be treated through a porous hollow-fiber membrane, an infinite variable-speed control type pump is provided upstream of the hollow-fiber membrane to maintain the water pressure inside the hollow fibers higher than the ozone gas pressure and to control the water pressure and flow rate, and a control mechanism is provided to control the ozone concentration in the treated water on the basis of the ozone gas concentration. Thereby treated water containing neither tiny bubbles nor impurities is obtained, and the concentration, flow rate and pressure of the treated water are controlled at constant levels.

    摘要翻译: 在通过放电型臭氧发生器产生的加压臭氧气体通过多孔中空纤维膜溶解在待处理水中的臭氧化水生产装置中,在中空纤维的上游设置无限变速控制型泵 以保持中空纤维内的水分压力高于臭氧气体压力并控制水压和流量,并且提供控制机制以根据臭氧气体浓度控制处理水中的臭氧浓度。 由此得到既不含微小气泡也不含杂质的处理水,处理水的浓度,流量和压力控制在恒定水平。

    Electron beam exposure apparatus with improved drawing precision
    27.
    发明授权
    Electron beam exposure apparatus with improved drawing precision 失效
    具有提高绘图精度的电子束曝光装置

    公开(公告)号:US5528047A

    公开(公告)日:1996-06-18

    申请号:US490353

    申请日:1995-06-14

    申请人: Ken Nakajima

    发明人: Ken Nakajima

    摘要: An electron beam exposure apparatus includes an electron beam generating section for generating a beam composed of electrons accelerated with a predetermined acceleration voltage, and a stage for mounting thereon a semiconductor wafer or reticle to be exposed by the electron beam. The stage includes a reference marker composed of a base section and a projection section. The base section is formed of a thin film of first conductive element having an atomic number greater than that of a material of the stage and has a first thickness through which more than 70% electrons in the beam can transmit and the projection section is formed of a bulk of second conductive element having an atomic number equal to or greater than that of the material of the stage and has a second thickness thicker than a maximum traveling distance of the electrons of the beam into the projection section. The electron beam exposure apparatus further includes an optical system for adjusting a deflection of the electron beam and a size of electron beam, and a detecting section for detecting electrons from the reference marker of the stage when the electron beam is irradiated on the reference marker of the stage in a calibration mode.

    摘要翻译: 电子束曝光装置包括:电子束产生部分,用于产生由预定加速电压加速的电子束构成的光束;以及用于安装半导体晶片或掩模版以通过电子束曝光的台。 舞台包括由基部和投影部组成的基准标记。 所述基部由第一导电元件的薄膜形成,所述第一导电元件的原子序数大于所述载物台的材料的原子序数,并且具有第一厚度,所述光束中超过70%的电子能透过所述第一厚度,并且所述投影部分由 第二导电元件的大部分具有等于或大于所述载物台材料原子数的第二导电元件,并且具有比梁的电子到投影部分的最大行进距离更厚的第二厚度。 电子束曝光装置还包括用于调整电子束偏转和电子束尺寸的光学系统,以及检测部分,用于当电子束照射在基准标记上时,从电极的基准标记物检测电子 校准模式下的舞台。

    Image processing system, image processing method, image processing recording medium, and program suitable for extraction processing
    28.
    发明授权
    Image processing system, image processing method, image processing recording medium, and program suitable for extraction processing 有权
    图像处理系统,图像处理方法,图像处理记录介质和适于提取处理的程序

    公开(公告)号:US07826658B2

    公开(公告)日:2010-11-02

    申请号:US10514366

    申请日:2003-04-16

    摘要: An image-processing apparatus for processing images, whereby the image-processing apparatus includes an image capture unit, a filter, and an extraction unit. The image capture unit acquires image signals composed of multiple color components of a 2×2 color-coding array. The filter then calculates an average pixel value associated with any (2n−1) pixels acquired by the image capture unit, whereby each of the filtered (2n−1) pixels include a target pixel and adjacent pixels having the same color component as that of the target pixel, and the calculated average is designated as the average of the target pixel and the adjacent pixels. At the extraction unit the pixel having the average calculated by the filter as the pixel value is extracted at an extraction rate of 1/(2n−1), where n is a positive integer value.

    摘要翻译: 一种用于处理图像的图像处理装置,由此图像处理装置包括图像捕获单元,滤波器和提取单元。 图像捕获单元获取由2×2颜色编码阵列的多个颜色分量组成的图像信号。 然后,滤波器计算与由图像捕获单元获取的任何(2n-1)个像素相关联的平均像素值,由此滤波的(2n-1)像素中的每一个包括目标像素和具有与 目标像素和计算出的平均值被指定为目标像素和相邻像素的平均值。 在提取单元中,以1 /(2n-1)的提取速率提取具有作为像素值的滤波器计算出的平均值的像素,其中n是正整数值。

    Process for producing silicon single crystal
    29.
    发明授权
    Process for producing silicon single crystal 有权
    硅单晶生产工艺

    公开(公告)号:US07628854B2

    公开(公告)日:2009-12-08

    申请号:US11486508

    申请日:2006-07-14

    IPC分类号: C30B15/20

    CPC分类号: C30B15/04 C30B29/06

    摘要: A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a neck having a tapered portion and a constant diameter portion, then pulling a silicon single crystal. The atmosphere used during neck formation is a hydrogen-containing atmosphere prepared by adding a hydrogen-containing substance to an inert gas. The hydrogen-containing substance has a hydrogen gas equivalent concentration in the hydrogen-containing atmosphere of 3 to 20%.

    摘要翻译: 制造硅单晶的方法包括使晶种与硅熔体接触的步骤,从熔体中逐渐拉晶晶,以形成具有锥形部分和恒定直径部分的颈部,然后拉动 硅单晶。 在颈部形成期间使用的气氛是通过向惰性气体中加入含氢物质制备的含氢气氛。 含氢物质在含氢气氛中的氢气当量浓度为3〜20%。

    Imaging apparatus
    30.
    发明申请
    Imaging apparatus 有权
    成像设备

    公开(公告)号:US20080246859A1

    公开(公告)日:2008-10-09

    申请号:US12079129

    申请日:2008-03-25

    IPC分类号: H04N5/76

    摘要: An imaging apparatus for performing efficient signal processing depending on the operational mode. In the finder mode, a CCD interface 21a decimates horizontal components of image data supplied from an image generating unit 10 to one-third and moreover processes the decimated image data with data conversion and resolution conversion to produce Y, Cb and Cr image data which are routed to and written in an image memory 32 over a memory controller 22. In the recording mode, the CCD interface 21a causes the image data from the image generating unit 10 to be written in the image memory 32 via memory controller 22 after decimation and gamma correction etc. The camera DSP 21c reads out the image data via memory controller 22 from the image memory 32 to effect data conversion for writing the resulting data via memory controller 22 in the image memory 32.

    摘要翻译: 一种用于根据操作模式执行有效信号处理的成像装置。 在取景器模式中,CCD接口21a将从图像生成单元10提供的图像数据的水平分量抽取到三分之一,并且还利用数据转换和分辨率转换处理抽取的图像数据,以产生Y,Cb和Cr图像数据,其中 被路由到并通过存储器控制器22写入图像存储器32中。 在记录模式中,CCD接口21a使得图像生成单元10的图像数据在抽取和伽马校正等之后经由存储器控制器22写入图像存储器32.照相机DSP21c经由 来自图像存储器32的存储器控​​制器22进行用于经由存储器控制器22将所得到的数据写入图像存储器32中的数据转换。