公开(公告)号：US20070017434A1

公开(公告)日：2007-01-25

申请号：US11486508

申请日：2006-07-14

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Takayuki Kubo ,  Akira Higuchi ,  Ken Nakajima

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Takayuki Kubo ,  Akira Higuchi ,  Ken Nakajima

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/04 ,  C30B29/06

摘要： A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a neck having a tapered portion and a constant diameter portion, then pulling a silicon single crystal. The atmosphere used during neck formation is a hydrogen-containing atmosphere prepared by adding a hydrogen-containing substance to an inert gas. The hydrogen-containing substance has a hydrogen gas equivalent concentration in the hydrogen-containing atmosphere of 3 to 20%.

摘要翻译： 制造硅单晶的方法包括使晶种与硅熔体接触的步骤，从熔体中逐渐拉晶晶，以形成具有锥形部分和恒定直径部分的颈部，然后拉动 硅单晶。 在颈部形成期间使用的气氛是通过向惰性气体中加入含氢物质制备的含氢气氛。 含氢物质在含氢气氛中的氢气当量浓度为3〜20％。

公开(公告)号：US07628854B2

公开(公告)日：2009-12-08

申请号：US11486508

申请日：2006-07-14

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Takayuki Kubo ,  Akira Higuchi ,  Ken Nakajima

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Takayuki Kubo ,  Akira Higuchi ,  Ken Nakajima

IPC分类号： C30B15/20

CPC分类号： C30B15/04 ,  C30B29/06

摘要： A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a neck having a tapered portion and a constant diameter portion, then pulling a silicon single crystal. The atmosphere used during neck formation is a hydrogen-containing atmosphere prepared by adding a hydrogen-containing substance to an inert gas. The hydrogen-containing substance has a hydrogen gas equivalent concentration in the hydrogen-containing atmosphere of 3 to 20%.

摘要翻译： 制造硅单晶的方法包括使晶种与硅熔体接触的步骤，从熔体中逐渐拉晶晶，以形成具有锥形部分和恒定直径部分的颈部，然后拉动 硅单晶。 在颈部形成期间使用的气氛是通过向惰性气体中加入含氢物质制备的含氢气氛。 含氢物质在含氢气氛中的氢气当量浓度为3〜20％。

公开(公告)号：US09254243B2

公开(公告)日：2016-02-09

申请号：US14008808

申请日：2012-03-14

申请人： Akira Higuchi ,  Akinobu Okuda ,  Akihiro Ohta ,  Yuki Takenaka ,  Tohru Nakamura

发明人： Akira Higuchi ,  Akinobu Okuda ,  Akihiro Ohta ,  Yuki Takenaka ,  Tohru Nakamura

IPC分类号： A61J1/20 ,  A61M5/162

CPC分类号： A61J1/2096 ,  A61M5/162

摘要： A drug transferring needle includes a needle base portion, a first needle portion having therein an air passage, and a second needle portion longer than the first needle portion and arranged parallel to the first needle portion. In the first needle portion, a first air vent being one end of the air passage is provided on a distal end side of the second needle portion from a second air vent being the other end of the air passage. In the second needle portion, one end of a liquid passage is connected to the inside of the needle base portion, and the other end thereof is a liquid pass opening of the second needle portion. The second needle portion has a distal end having the liquid pass opening, a base portion connected to the needle base portion, and an intermediate portion connecting the distal end and the base portion.

摘要翻译： 药物传送针包括针基部，其中具有空气通道的第一针部分和比第一针部长并且平行于第一针部分布置的第二针部分。 在第一针部中，作为空气通路的另一端的第二排气口在第二针部的前端侧设置有作为空气通路一端的第一排气口。 在第二针部中，液体通路的一端与针基部的内侧连接，另一端为第二针部的液体通过口。 第二针部具有具有液体通过口的远端，与针基部连接的基部，以及连接前端和基部的中间部。

公开(公告)号：US07787735B2

公开(公告)日：2010-08-31

申请号：US11822542

申请日：2007-07-06

申请人： Hiroyasu Fujiwara ,  Masamichi Yamanishi ,  Akira Higuchi ,  Kazutoshi Nakajima

发明人： Hiroyasu Fujiwara ,  Masamichi Yamanishi ,  Akira Higuchi ,  Kazutoshi Nakajima

IPC分类号： G02B6/10

CPC分类号： G02B6/1226 ,  B82Y20/00

摘要： There is disclosed a waveguide structure that propagates surface plasmon waves, comprising: a quantum well structure, disposed on a semiconductor substrate; wherein the quantum well structure has a quantum well layer, in turn having an intersecting region that intersects a hypothetical plane substantially orthogonal to an alignment direction of the quantum well structure with respect to the semiconductor substrate, and a real part of a dielectric constant of the quantum well structure is negative for THz waves of a predetermined wavelength.

摘要翻译： 公开了传播表面等离子体波的波导结构，包括：量子阱结构，设置在半导体衬底上; 其中所述量子阱结构具有量子阱层，其又具有与基本上正交于所述量子阱结构相对于所述半导体衬底的取向方向的假想平面相交的交叉区域，以及所述量子阱结构的介电常数的实部 量子阱结构对于预定波长的THz波是负的。

公开(公告)号：US20090241699A1

公开(公告)日：2009-10-01

申请号：US12403448

申请日：2009-03-13

申请人： Akira Higuchi ,  Shirou Yamashita ,  Kouji Shimogawa

发明人： Akira Higuchi ,  Shirou Yamashita ,  Kouji Shimogawa

IPC分类号： G01N1/00

CPC分类号： G01N35/1004 ,  G01N2035/1037

摘要： In a micro-liquid transfer apparatus including two washing tanks (first washing tanks A and B), operations to transfer a sample are carried out using two pin tools (pin tools A and B) alternately. While one pin tool A is being mounted on a pin tool holder and is being used to transfer a liquid, the other pin tool B is waiting in a state where the lower end portions of their associated pins are immersed in the first washing tank B. While one pin tool A is being mounted on a pin tool holder and is being used to transfer a very small amount of liquid, the lower end portions of the respective pins of the other pin tool are washed, whereby the liquid transfer operations can be made in progress with no interruption and thus the generation of the operation waiting time can be prevented.

摘要翻译： 在包括两个洗涤槽（第一洗涤槽A和B）的微液体传送设备中，传送样品的操作使用两个针工具（针工具A和B）交替进行。 当一个针工具A被安装在销刀架上并用于传送液体时，另一个销工具B在其相关销的下端部浸入第一洗涤槽B的状态下等待。 当一个针工具A被安装在销刀架上并被用于传送非常少量的液体时，另一个针工具的各个销的下端部被洗涤，从而可以进行液体转移操作 正在进行而不中断，从而可以防止产生操作等待时间。

公开(公告)号：US07485465B2

公开(公告)日：2009-02-03

申请号：US10549149

申请日：2005-04-05

申请人： Akira Higuchi ,  Eiji Watanabe

发明人： Akira Higuchi ,  Eiji Watanabe

IPC分类号： G01N35/02 ,  G01N35/04

CPC分类号： G01N35/028 ,  G01N2035/0405 ,  Y10T436/11 ,  Y10T436/113332 ,  Y10T436/114165 ,  Y10T436/114998

摘要： In a microplate processing apparatus that removes lid (11) of microplate (10) conveyed by microplate conveying mechanism (3) to perform a dispensing process by dispensing head (8), and that attaches lid (11) after the dispensing process is completed, lid (11) removed by lid removing mechanism (6) at first position (P1) is conveyed to third position (P3) located downstream, by microplate conveying mechanism (3), to be held by lid attaching mechanism (9), and then lid (11) is attached to microplate (10) having been conveyed to third position (P3), after the dispensing process is completed, while microplate (10) with this lid (11) having been attached is being lifted to processing position (P4) above microplate conveying mechanism (3), by microplate stage (12).

摘要翻译： 在微孔板处理装置中，除去由微孔板输送机构（3）输送的微板（10）的盖（11），以通过分配头（8）进行分配处理，并且在分配过程完成之后附着盖（11） 通过盖板拆卸机构（6）在第一位置（P1）移除的盖子（11）通过微孔板输送机构（3）输送到位于下游的第三位置（P3），由盖子安装机构（9）保持，然后 在分配过程完成之后，将具有已经被附接的盖子（11）的微孔板（10）提升到处理位置（P4），将盖子（11）连接到已经被输送到第三位置（P3）的微孔板（10） ）微孔板输送机构（3），微板台（12）。

公开(公告)号：US07120029B2

公开(公告)日：2006-10-10

申请号：US10668187

申请日：2003-09-24

申请人： Hirotaka Nishizawa ,  Kenji Osawa ,  Akira Higuchi ,  Junichiro Osako ,  Tamaki Wada

发明人： Hirotaka Nishizawa ,  Kenji Osawa ,  Akira Higuchi ,  Junichiro Osako ,  Tamaki Wada

IPC分类号： H05K1/14

CPC分类号： G06K19/07743 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/14 ,  Y10S439/945 ,  Y10S439/946 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/00

摘要： The productivity of an IC card is to be improved. In a memory card of the type in which a memory body having a wiring substrate and a semiconductor chip mounted on a main surface of the wiring substrate is held so as to be sandwiched in between a first case and a second case, a planar outline of the memory body is smaller than half of a planar outline of the memory card. The memory body is disposed so as to be positioned closer to a first end side as one short side of the memory card with respect to a midline between the first end side and a second end side as an opposite short side of the memory card positioned on the side opposite to the first end side. The other area than the memory body-disposed area in the first and the second case is used as another functional area.

摘要翻译： 提高IC卡的生产率。 在其中具有布线基板的存储体和安装在布线基板的主表面上的半导体芯片被夹持在第一壳体和第二壳体之间的类型的存储卡中，平面轮廓 存储器体小于存储卡的平面轮廓的一半。 存储体被布置成相对于位于第一端侧和第二端侧之间的中线的位置，更靠近作为存储卡的一个短边的第一端侧，作为位于存储卡的相对的短边 与第一端侧相对的一侧。 将第一和第二种情况下的存储体配置区域以外的区域用作另一功能区域。

公开(公告)号：US20060220202A1

公开(公告)日：2006-10-05

申请号：US11423755

申请日：2006-06-13

申请人： Junichiro Osako ,  Hirotaka Nishizawa ,  Kenji Osawa ,  Akira Higuchi

发明人： Junichiro Osako ,  Hirotaka Nishizawa ,  Kenji Osawa ,  Akira Higuchi

IPC分类号： H01L23/02

CPC分类号： H05K3/284 ,  B29C45/14647 ,  B29C45/14655 ,  B29C45/1657 ,  B29C45/1671 ,  B29C2045/1673 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/49855 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2924/01014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H05K1/117 ,  H05K2201/10159 ,  H05K2203/1316 ,  H05K2203/1572 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An IC body is loaded to a case 2 made of thermosetting resin material and sealed with a sealing portion made of thermosetting resin material to be integrated, whereby an IC card is manufactured. The IC body comprises: a wiring substrate formed with an external connection terminal at a back surface thereof; a semiconductor chip loaded over a surface of the wiring substrate and electrically connected to the external connection terminal via a interconnect; and the sealing portion made of thermosetting resin material so as to cover the semiconductor chip and a bonding wire. The sealing portion is formed so that the external connection terminal is exposed. The present invention makes it possible to heighten the strength of IC cards and at the same time, to reduce the manufacturing cost and improve the reliability.

摘要翻译： 将IC体装载到由热固性树脂材料制成的壳体2上，并用由热固性树脂材料制成的密封部分密封，从而制造IC卡。 IC体包括：在其背面形成有外部连接端子的布线基板; 半导体芯片，其负载在所述布线基板的表面上，并且经由互连电连接到所述外部连接端子; 以及由热固性树脂材料制成的密封部分以覆盖半导体芯片和接合线。 密封部形成为使外部连接端子露出。 本发明可以提高IC卡的强度，同时降低制造成本，提高可靠性。

公开(公告)号：US06624430B2

公开(公告)日：2003-09-23

申请号：US10152343

申请日：2002-05-22

申请人： Akira Higuchi

发明人： Akira Higuchi

IPC分类号： G21K510

CPC分类号： H01J37/304 ,  H01J2237/3045 ,  H01J2237/3175

摘要： A calibration mask having a plurality of marks previously formed thereon is loaded, and a deflector is used to control deflection of electron beams so that the electron beams are incident on a mark of the calibration mask. The electron beams, having passed through the mark, impinge on a first Faraday cup having a first mark and on a second Faraday cup having a second mark. Then, positional coordinates on an XY stage are detected when electrical quantities detected by the Faraday cups are largest. The positional coordinates on the above mentioned XY stage are detected for each of the marks of the calibration mask. Then, according to the positional coordinates on the XY stage detected in this manner and a difference in height between the marks, the inclination of the electron beams is calculated for the position input to each mark of the calibration mask. Thus, the inclination of electron beams can be accurately measured.

公开(公告)号：US06501160B1

公开(公告)日：2002-12-31

申请号：US09481594

申请日：2000-01-12

申请人： Akira Higuchi ,  Ichio Shimizu ,  Munehisa Kishimoto

发明人： Akira Higuchi ,  Ichio Shimizu ,  Munehisa Kishimoto

IPC分类号： H01L23495

CPC分类号： H05K3/341 ,  H01L23/49503 ,  H01L23/49555 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/181 ,  H05K2201/09663 ,  H05K2201/10689 ,  H05K2201/10909 ,  H05K2201/10969 ,  H05K2201/2081 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： The present invention provides a technique capable of improving a mounting failure in a resin encapsulated semiconductor device and repairability thereof. The present semiconductor device includes a resin encapsulater, a semiconductor chip located within the resin encapsulater and having a plurality of electrodes on one main surface, a semiconductor chip loading portion disposed within the resin encapsulater and having a loaded surface for mounting the semiconductor chip thereon and an unloaded surface provided on the side opposite to the loaded surface, and a plurality of input/output leads which are connected to the plurality of electrodes to input signals to the plurality of electrodes of the semiconductor chip or output signals from the plurality of electrodes thereof and which extend outside the resin encapsulater. Further, the unloaded surface of the semiconductor chip loading portion comprises a plurality of regions separated from one another and the plurality of regions are exposed from the resin encapsulater.

摘要翻译： 本发明提供了能够改善树脂封装半导体器件的安装故障的技术及其可修复性。本半导体器件包括树脂封装件，位于树脂封装件内的半导体芯片，并且在一个主表面上具有多个电极， 半导体芯片装载部分，设置在树脂封装体内，并具有用于将半导体芯片安装在其上的负载表面和设置在与装载表面相对的一侧的无载表面;以及多个输入/输出引线， 用于向半导体芯片的多个电极输入信号的电极或者来自其多个电极的输出信号，并且延伸到树脂封装体的外部。 此外，半导体芯片负载部分的未加载表面包括彼此分离的多个区域，并且多个区域从树脂封装体露出。