公开(公告)号：US5060975A

公开(公告)日：1991-10-29

申请号：US446429

申请日：1989-12-05

申请人： Shoichi Sano ,  Suguru Yoshida ,  Ken Uchida ,  Hajime Kajiwara ,  Masao Ohno ,  Tateo Kawade

发明人： Shoichi Sano ,  Suguru Yoshida ,  Ken Uchida ,  Hajime Kajiwara ,  Masao Ohno ,  Tateo Kawade

IPC分类号： B62D29/00 ,  B62D29/04

CPC分类号： B62D29/001 ,  B62D29/048

摘要： The part-mounting structure of the present invention includes a part-mounting portion of a sandwich structure constituted by a core layer and plastic skin layers formed on both surfaces of the core layer, and a part-mounting metal member, at least one of the skin layers having a tapered recess having a sloped side wall and a flat bottom wall, the bottom wall being constituted by the skin layers bonded together, the part-mounting metal member having a bottom plate, and a pair of side plates vertically extending from the bottom plate substantially on both sides, at least one of the side plates having a dent tapered complementarily to the tapered recess of the sandwich structure. The part-mounting metal member is mounted to the part-mounting portion of the sandwich structure with a surface of the tapered recess of the sandwich structure and a surface of the tapered dent of the part-mounting metal member bonded together by an adhesive. This structure is suitable for mounting various parts such as engines, suspension beams, upper arms, radius rods, dampers, seat slide rails, etc. to the vehicle body.

公开(公告)号：US4818716A

公开(公告)日：1989-04-04

申请号：US111690

申请日：1987-10-22

申请人： Kousuke Okuyama ,  Ken Uchida ,  Kouichi Kusuyama ,  Satoshi Meguro ,  Hisao Katto ,  Kazuhiro Komori

发明人： Kousuke Okuyama ,  Ken Uchida ,  Kouichi Kusuyama ,  Satoshi Meguro ,  Hisao Katto ,  Kazuhiro Komori

IPC分类号： H01L27/112 ,  H01L21/8246 ,  H01L21/265 ,  B01J17/00

CPC分类号： H01L27/1126

摘要： Disclosed are memory cells of a vertical-type read only memory (ROM) having a plurality of MISFETs connected in series. The MISFETs include gate electrodes formed with multiple conductive layers, in which some of the MISFETs are set to the depletion type and at least some of the remaining MISFETs are set to the enhancement type, so as to write information in the memory cells. The information write operation is conducted through at least two steps. Namely, in the first information write step, gate electrodes are used as a mask to implant an impurity; and in the second step, an impurity is implanted through the gate electrodes into the surface of the semiconductor substrate. These steps enable a semiconductor memory device, such as a vertical-type mask ROM having memory cells with a reduced series resistance and being suitable for a high degree of integration, to be produced.Furthermore, there is disclosed a memory structure of a semiconductor memory device suitable for a higher degree of integration through an arrangement of gate electrodes of multiple layers.

摘要翻译： 公开了具有串联连接的多个MISFET的垂直型只读存储器（ROM）的存储单元。 MISFET包括形成有多个导电层的栅电极，其中一些MISFET被设置为耗尽型，并且至少一些剩余的MISFET被设置为增强型，以便将信息写入存储单元。 信息写入操作通过至少两个步骤进行。 也就是说，在第一信息写入步骤中，使用栅电极作为掩模来注入杂质; 并且在第二步骤中，通过栅电极将杂质注入到半导体衬底的表面中。 这些步骤使得能够生产半导体存储器件，例如具有降低的串联电阻并且适于高度集成的存储单元的垂直型掩模ROM。 此外，公开了一种半导体存储器件的存储结构，其适用于通过多层栅电极的布置而具有更高的集成度。

公开(公告)号：US08039887B2

公开(公告)日：2011-10-18

申请号：US12773967

申请日：2010-05-05

申请人： Masumi Saitoh ,  Ken Uchida

发明人： Masumi Saitoh ,  Ken Uchida

IPC分类号： H01L29/788

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L29/165 ,  H01L29/7881

摘要： A non-volatile semiconductor storage device includes: a semiconductor substrate; a source region and a drain region formed in the semiconductor substrate so as to be separated from each other; a first insulating film formed between the source region and the drain region, on the semiconductor substrate; a floating electrode formed on the first insulating film and including a semiconductor conductive material layer having extension strain; a second insulating film formed on the floating electrode; and a control electrode formed on the second insulating film. The extension strain of the floating electrode becomes gradually small as the location advances from the second insulating film toward the first insulating film, and the floating electrode has extension strain of 0.01% or more at an interface between the floating electrode and the second insulating film, and has extension strain less than 0.01% at an interface between the floating electrode and the first insulating film.

摘要翻译： 非易失性半导体存储器件包括：半导体衬底; 源极区域和漏极区域，形成在半导体衬底中以便彼此分离; 在所述半导体衬底上形成在所述源极区域和所述漏极区域之间的第一绝缘膜; 形成在所述第一绝缘膜上并具有延伸应变的半导体导电材料层的浮动电极; 形成在浮置电极上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制电极。 浮动电极的延伸应变随着位置从第二绝缘膜向第一绝缘膜前进而逐渐变小，浮动电极在浮动电极和第二绝缘膜之间的界面具有0.01％以上的延伸应变， 并且在浮动电极和第一绝缘膜之间的界面处具有小于0.01％的延伸应变。

公开(公告)号：US07057302B2

公开(公告)日：2006-06-06

申请号：US10909399

申请日：2004-08-03

申请人： Kazuya Matsuzawa ,  Ken Uchida ,  Takahiro Nakauchi

发明人： Kazuya Matsuzawa ,  Ken Uchida ,  Takahiro Nakauchi

IPC分类号： H01L27/11

CPC分类号： H01L27/11 ,  H01L27/1104 ,  H01L27/1463 ,  Y10S257/903

摘要： A static random access memory has first and second complementary field-effect transistors. The first complementary field-effect transistor includes a semiconductor substrate, a first field-effect transistor of electron conduction type which has a first drain region constituting a Schottky junction and a gate electrode, and a first field-effect transistor of positive hole conduction type which shares the first drain region and has a shared gate electrode. The second complementary field-effect transistor includes a second field-effect transistor of electron conduction type which has a second drain region and a gate electrode, a second field-effect transistor of positive hole conduction type which shares the second drain region and has a shared gate electrode. The gate electrode shared by the first and second complementary field-effect transistors is connected to the common drain region of the mutually opposing complementary field-effect transistors, and the static random access memory has superior resistance to software errors.

摘要翻译： 一种静态随机存取存储器具有第一和第二互补型场效应晶体管。 第一互补场效应晶体管包括：半导体衬底，电子传导类型的第一场效应晶体管，其具有构成肖特基结和栅电极的第一漏极区，和正空穴传导类型的第一场效应晶体管，其 共享第一漏极区，设有一个共用栅电极。 所述第二互补型场效应晶体管包括电子传导类型的第二场效应晶体管，其具有第二漏区和栅电极，正空穴传导类型的这股第二漏区，并具有一共享的第二场效应晶体管 栅电极。 由第一和第二互补场效应晶体管共享栅电极被连接到彼此相对的互补型场效应晶体管的公共漏极区和静态随机存取存储器具有软件错误优异。

公开(公告)号：US06252272B1

公开(公告)日：2001-06-26

申请号：US09267607

申请日：1999-03-15

申请人： Hiroshi Watanabe ,  Hitoshi Itoh ,  Ken Uchida

发明人： Hiroshi Watanabe ,  Hitoshi Itoh ,  Ken Uchida

IPC分类号： H01L29788

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/7883

摘要： A surface portion of a semiconductor substrate 41 is serrated at intervals equal to a minimum processing size to form impurity diffusion layers in peaks. These impurity diffusion layers are isolated from each other by valleys. At a valley where a gate is formed, the gate and impurity diffusion layers and in peaks on the two sides of the gate form a MOS transistor. A valley in which no gate is formed functions as an element isolation region. Since a MOS transistor or an element isolation region is formed in one valley, the element area is reduced. A surface of a p-type semiconductor substrate is serrated to form n+-type impurity regions in peaks and floating gates having an upper spired portion in valleys via a silicon oxide film. Control gates are formed on the floating gates via a tunnel oxide film. The lower portion of the control gate has a shape corresponding to the valley and opposes the upper portion of the floating gate by self-alignment. Data is written or erased by using a tunnel current flowing of electrons through the tunnel oxide film between the floating gate and control gate having the above-mentioned shapes and positional relationship. This achieves micropatterning and reduces the maximum operating voltage at the same time.

摘要翻译： 半导体衬底41的表面部分以等于最小处理尺寸的间隔被锯齿，以在峰上形成杂质扩散层。 这些杂质扩散层通过谷彼此隔离。 在形成栅极的谷中，栅极和杂质扩散层以及栅极两侧的峰形成MOS晶体管。 没有栅极的谷形成元件隔离区域。 由于在一个谷中形成MOS晶体管或元件隔离区域，所以元件面积减小。p型半导体衬底的表面被锯齿形以形成峰顶中的n +型杂质区域和具有上部尖端部分的浮动栅极 谷经硅氧化膜。 控制栅极通过隧道氧化膜形成在浮动栅极上。 控制栅极的下部具有与谷相对应的形状，并且通过自对准与浮栅的上部相对。 通过使用电子流通过具有上述形状和位置关系的浮动栅极和控制栅极之间的隧道氧化物膜的隧道电流来写入或擦除数据。 这实现了微图案化，同时降低了最大工作电压。

公开(公告)号：US5432023A

公开(公告)日：1995-07-11

申请号：US238703

申请日：1994-05-05

申请人： Shuji Yamada ,  Motoya Kanda ,  Masao Yamamoto ,  Nobukazu Suzuki ,  Yoshiko Kanazawa ,  Akinori Hongu ,  Yuu Kondou ,  Ken Uchida ,  Koji Hashimoto ,  Hirokazu Niki ,  Kunihiko Sasaki ,  Shinji Tsuruta

发明人： Shuji Yamada ,  Motoya Kanda ,  Masao Yamamoto ,  Nobukazu Suzuki ,  Yoshiko Kanazawa ,  Akinori Hongu ,  Yuu Kondou ,  Ken Uchida ,  Koji Hashimoto ,  Hirokazu Niki ,  Kunihiko Sasaki ,  Shinji Tsuruta

IPC分类号： H01M4/86 ,  H01M4/92 ,  H01M8/02 ,  H01M8/04 ,  H01M8/10 ,  H01M8/24

CPC分类号： H01M8/0204 ,  H01M4/86 ,  H01M4/925 ,  H01M4/926 ,  H01M8/023 ,  H01M8/0245 ,  H01M8/0271 ,  H01M8/04156 ,  H01M8/04186 ,  H01M8/04291 ,  H01M8/1004 ,  H01M8/2455 ,  H01M8/247 ,  H01M2300/0082

摘要： In a fuel cell comprising a stack having superposed a plurality of electromotive parts composed of a fuel electrode, an oxidizing electrode, and an electrolyte layer nipped by the two electrodes and using a liquid fuel as the fuel for the fuel cell, this invention contemplates forming a liquid fuel introducing path destined to be directly exposed to the liquid fuel on terminal surfaces of the component parts of the electromotive parts in a direction perpendicular to the flow of an oxidizing gas along at least one of the outer peripheral surfaces of the stack including the terminal surface of the fuel electrode and lying parallelly to the flow of the oxidizing gas and enabling the liquid fuel in the liquid fuel introducing path to be supplied to the fuel electrodes by a capillary attraction. A fuel cell provided with means for recovery of the water produced by the cell reaction in the oxidizing electrodes is also disclosed, which fuel cell effects the removal of the water produced in the oxidizing electrodes during the operation of the fuel cell by a capillary attraction generated by two porous members, i.e. a first porous member disposed in the oxidizing electrodes and a second porous member adjoined to the first porous member and possessed of a smaller average pore diameter than the first porous member.

摘要翻译： 在包括由燃料电极，氧化电极和由两个电极夹持并且使用液体燃料作为燃料电池的燃料的电解质层组成的多个电动部分叠置的燃料电池中，本发明考虑到形成 液体燃料导入路径，其特征在于，所述液体燃料导入路径旨在直接暴露于所述电动部件的所述构成部件的端子面的液体燃料，所述液体燃料导向路径沿与所述氧化气体的流动方向垂直的方向沿着所述堆叠体的至少一个外周面， 燃料电极的端子表面并且与氧化气体的流动平行地放置，并且能够通过毛细吸引力将液体燃料引入路径中的液体燃料供应到燃料电极。 还公开了一种燃料电池，其具有用于回收由氧化电极中的电池反应产生的水的装置，该燃料电池通过产生毛细管吸引力而在燃料电池的操作期间实现氧化电极中产生的水的去除 通过两个多孔构件，即设置在氧化电极中的第一多孔构件和与第一多孔构件相邻并且具有比第一多孔构件更小的平均孔径的第二多孔构件。

公开(公告)号：US5391924A

公开(公告)日：1995-02-21

申请号：US120336

申请日：1993-09-14

申请人： Ken Uchida ,  Kiyoaki Suzuki

发明人： Ken Uchida ,  Kiyoaki Suzuki

IPC分类号： C08K3/00 ,  C08L63/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/28

CPC分类号： H01L23/293 ,  H01L23/295 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/73 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181

摘要： Disclosed is a plastic package type semiconductor device having a semiconductor element encapsulated with an epoxy resin composition, said resin composition containing as indispensable components (a) an epoxy resin, (b) a curing agent, (c) a curing promotor, (d) a first inorganic powder having an average diameter of 5 to 40 .mu.m and a smooth outer surface substantially free from edges, ridges and projections, and (e) a second inorganic powder having an average diameter of 0.1 to 10 .mu.m and a heat conductivity of at least 4.0 W/m.multidot.K, the mixing amount of the first inorganic powder (d) being 10 to 50% by volume based on the sum of the first inorganic powder (d) and the second inorganic powder (e).

摘要翻译： 公开了一种具有被环氧树脂组合物封装的半导体元件的塑料封装型半导体器件，所述树脂组合物含有作为不可缺少的成分（a）环氧树脂，（b）固化剂，（c）固化促进剂，（d） 平均直径为5〜40μm的第一无机粉末和基本上不含边缘，脊和突起的光滑的外表面，和（e）平均直径为0.1-10μm的第二无机粉末和热导率 至少4.0W / m×K，第一无机粉末（d）的混合量相对于第一无机粉末（d）和第二无机粉末（e）的总和为10〜50体积％。

公开(公告)号：US5364711A

公开(公告)日：1994-11-15

申请号：US41427

申请日：1993-03-31

申请人： Shuji Yamada ,  Motoya Kanda ,  Masao Yamamoto ,  Nobukazu Suzuki ,  Yoshiko Kanazawa ,  Akinori Hongu ,  Yuu Kondou ,  Ken Uchida ,  Koji Hasimoto ,  Hirokazu Niki ,  Kunihiko Sasaki ,  Shinji Tsuruta

发明人： Shuji Yamada ,  Motoya Kanda ,  Masao Yamamoto ,  Nobukazu Suzuki ,  Yoshiko Kanazawa ,  Akinori Hongu ,  Yuu Kondou ,  Ken Uchida ,  Koji Hasimoto ,  Hirokazu Niki ,  Kunihiko Sasaki ,  Shinji Tsuruta

IPC分类号： H01M4/86 ,  H01M4/92 ,  H01M8/02 ,  H01M8/04 ,  H01M8/10 ,  H01M8/24

CPC分类号： H01M8/0204 ,  H01M4/86 ,  H01M4/925 ,  H01M4/926 ,  H01M8/023 ,  H01M8/0245 ,  H01M8/0271 ,  H01M8/04156 ,  H01M8/04186 ,  H01M8/04291 ,  H01M8/1004 ,  H01M8/2455 ,  H01M8/247 ,  H01M2300/0082

摘要： In a fuel cell comprising a stack having superposed a plurality of electromotive parts composed of a fuel electrode, an oxidizing electrode, and an electrolyte layer nipped by the two electrodes and using a liquid fuel as the fuel for the fuel cell, this invention contemplates forming a liquid fuel introducing path destined to be directly exposed to the liquid fuel on terminal surfaces of the component parts of the electromotive parts in a direction perpendicular to the flow of an oxidizing gas along at least one of the outer peripheral surfaces of the stack including the terminal surface of the fuel electrode and lying parallelly to the flow of the oxidizing gas and enabling the liquid fuel in the liquid fuel introducing path to be supplied to the fuel electrodes by a capillary attraction. A fuel cell provided with means for recovery of the water produced by the cell reaction in the oxidizing electrodes is also disclosed, which fuel cell effects the removal of the water produced in the oxidizing electrodes during the operation of the fuel cell by a capillary attraction generated by two porous members.

摘要翻译： 在包括由燃料电极，氧化电极和由两个电极夹持并且使用液体燃料作为燃料电池的燃料的电解质层组成的多个电动部分叠置的燃料电池中，本发明考虑到形成 液体燃料导入路径，其特征在于，所述液体燃料导入路径旨在直接暴露于所述电动部件的所述构成部件的端子面的液体燃料，所述液体燃料导向路径沿与所述氧化气体的流动方向垂直的方向沿着所述堆叠体的至少一个外周面， 燃料电极的端子表面并且与氧化气体的流动平行地放置，并且能够通过毛细吸引力将液体燃料引入路径中的液体燃料供应到燃料电极。 还公开了一种燃料电池，其具有用于回收由氧化电极中的电池反应产生的水的装置，该燃料电池通过产生毛细管吸引力而在燃料电池的操作期间实现氧化电极中产生的水的去除 由两个多孔构件。

公开(公告)号：US5258426A

公开(公告)日：1993-11-02

申请号：US484676

申请日：1990-02-20

申请人： Ken Uchida ,  Shinetsu Fujieda ,  Michiya Higashi ,  Hiroshi Shimozawa ,  Akira Yoshizumi

发明人： Ken Uchida ,  Shinetsu Fujieda ,  Michiya Higashi ,  Hiroshi Shimozawa ,  Akira Yoshizumi

IPC分类号： C08K3/36 ,  C08G59/00 ,  C08G59/40 ,  C08K5/56 ,  C08L63/00 ,  C08L79/08 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/293 ,  H01L23/295 ,  H01L2924/0002 ,  Y10T428/31511 ,  Y10T428/31721

摘要： A semiconductor device encapsulant contains (a) a thermosetting resin for providing a cured product having a glass transition temperature of not less than 190.degree. C., (b) a filler consisting of a fused silica, (c) a modifier consisting of an MBS or ABS, (d) a modifier consisting of a silicone rubber or a silicone gel, and (e) a lubricant containing a metal chelate compound.

公开(公告)号：US4939386A

公开(公告)日：1990-07-03

申请号：US118537

申请日：1987-11-04

申请人： Ryuuji Shibata ,  Ken Uchida ,  Toshifumi Takeda ,  Youichi Matsumoto

发明人： Ryuuji Shibata ,  Ken Uchida ,  Toshifumi Takeda ,  Youichi Matsumoto

IPC分类号： H01L29/78 ,  H01L21/8246 ,  H01L27/112

CPC分类号： H01L27/112 ,  Y10S257/90

摘要： Disclosed in an N-type MISFET having the LDD structure in which the short-channel effect is reduced by employing arsenic, which has a smaller diffusion coefficient value than that of phosphorus, to form low- and high-impurity concentration regions which constitute in combination source and drain regions of the MISFET.

摘要翻译： 公开了具有LDD结构的N型MISFET，其通过使用具有比磷更小的扩散系数值的砷来减少短沟道效应，形成组合的低和高杂质浓度区域 源极和漏极区域。