公开(公告)号：US07855412B2

公开(公告)日：2010-12-21

申请号：US12453520

申请日：2009-05-14

申请人： Hideo Matsuki ,  Eiichi Okuno ,  Naohiro Suzuki

发明人： Hideo Matsuki ,  Eiichi Okuno ,  Naohiro Suzuki

IPC分类号： H01L27/108 ,  H01L29/76

CPC分类号： H01L21/0465 ,  H01L21/0475 ,  H01L29/1608 ,  H01L29/66068

摘要： An SiC semiconductor device includes a substrate, a drift layer disposed on a first surface of the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a trench penetrating the source region and the base region to the drift layer, a gate insulating layer disposed on a surface of the trench, a gate electrode disposed on a surface of the gate insulating layer, a first electrode electrically coupled with the source region and the base region, a second electrode disposed on the second surface of the substrate, and a second conductivity-type layer disposed at a portion of the base region located under the source region. The second conductivity-type layer has the second conductivity type and has an impurity concentration higher than the base region.

摘要翻译： SiC半导体器件包括衬底，设置在衬底的第一表面上的漂移层，设置在漂移层上方的基极区域，设置在基极区域上方的源极区域，穿透源极区域和基极区域的沟槽 漂移层，设置在沟槽表面上的栅极绝缘层，设置在栅极绝缘层的表面上的栅极电极，与源极区域和基极区域电耦合的第一电极，设置在第二表面上的第二电极 以及设置在位于源极区域下方的基极区域的一部分的第二导电型层。 第二导电型层具有第二导电类型并且具有高于基极区的杂质浓度。

公开(公告)号：US07634272B2

公开(公告)日：2009-12-15

申请号：US10686609

申请日：2003-10-17

申请人： Takeshi Yamashita ,  Hideo Matsuki ,  Jyunichirou Hagiwara ,  Hidetoshi Kayama ,  Narumi Umeda

发明人： Takeshi Yamashita ,  Hideo Matsuki ,  Jyunichirou Hagiwara ,  Hidetoshi Kayama ,  Narumi Umeda

IPC分类号： H04W36/00

CPC分类号： H04W36/04 ,  H04W36/30

摘要： In mobile communication system 100 according to the present invention, mobile station 1 is camped on cell C10 established by base station B10. In the cell C10, there exist indoor cells C11-C13 and outdoor cells C21, C22 as neighboring cells. Mobile station 1 measures received levels of cells C10-C13, C21, C22 and determines cell types of the respective cells, i.e., whether each cell is an indoor cell or not, based on broadcast information M1. Mobile station 1 selects a cell as a reselection target on the basis of the received levels and cell types.

摘要翻译： 在根据本发明的移动通信系统100中，移动台1驻留在由基站B10建立的小区C10上。 在单元格C10中，存在室内单元C11-C13和室外单元C21，C22作为相邻单元。 移动站1基于广播信息M1来测量小区C10-C13，C21，C22的接收电平，并且确定各个小区的小区类型，即每个小区是否是室内小区。 移动站1基于所接收的等级和小区类型来选择小区作为重选目标。

公开(公告)号：US20090289264A1

公开(公告)日：2009-11-26

申请号：US12453520

申请日：2009-05-14

申请人： Hideo Matsuki ,  Eiichi Okuno ,  Naohiro Suzuki

发明人： Hideo Matsuki ,  Eiichi Okuno ,  Naohiro Suzuki

IPC分类号： H01L29/161 ,  H01L21/04 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L21/0465 ,  H01L21/0475 ,  H01L29/1608 ,  H01L29/66068

摘要： An SiC semiconductor device includes a substrate, a drift layer disposed on a first surface of the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a trench penetrating the source region and the base region to the drift layer, a gate insulating layer disposed on a surface of the trench, a gate electrode disposed on a surface of the gate insulating layer, a first electrode electrically coupled with the source region and the base region, a second electrode disposed on the second surface of the substrate, and a second conductivity-type layer disposed at a portion of the base region located under the source region. The second conductivity-type layer has the second conductivity type and has an impurity concentration higher than the base region.

摘要翻译： SiC半导体器件包括衬底，设置在衬底的第一表面上的漂移层，设置在漂移层上方的基极区域，设置在基极区域上方的源极区域，穿透源极区域和基极区域的沟槽 漂移层，设置在沟槽表面上的栅极绝缘层，设置在栅极绝缘层的表面上的栅极电极，与源极区域和基极区域电耦合的第一电极，设置在第二表面上的第二电极 以及设置在位于源极区域下方的基极区域的一部分的第二导电型层。 第二导电型层具有第二导电类型并且具有高于基极区的杂质浓度。

公开(公告)号：US20070281173A1

公开(公告)日：2007-12-06

申请号：US11882137

申请日：2007-07-31

申请人： Jun Kojima ,  Takeshi Endo ,  Eiichi Okuno ,  Yoshihito Mitsuoka ,  Yoshiyuki Hisada ,  Hideo Matsuki

发明人： Jun Kojima ,  Takeshi Endo ,  Eiichi Okuno ,  Yoshihito Mitsuoka ,  Yoshiyuki Hisada ,  Hideo Matsuki

IPC分类号： B32B9/04

CPC分类号： H01L29/66068 ,  H01L21/02024 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7828

摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

摘要翻译： 碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。

公开(公告)号：US07003325B2

公开(公告)日：2006-02-21

申请号：US10317058

申请日：2002-12-12

申请人： Hideyuki Matsutani ,  Hideo Matsuki ,  Tetsuro Imai

发明人： Hideyuki Matsutani ,  Hideo Matsuki ,  Tetsuro Imai

IPC分类号： H04Q7/20

CPC分类号： H04W64/00 ,  G01S5/0205 ,  G01S5/0226 ,  G01S5/14 ,  G01S11/06 ,  Y02D70/00

摘要： Signals received from mobile station by respective slave units each are attenuated by a combination of attenuation factors set for the respective slave units, the attenuated signals thereafter are combined into a resultant signal in master unit, and the combination of attenuation factors is changed based on a predetermined rule. Then information about magnitudes of powers of signals received from the mobile station by the respective slave units is acquired based on change of information about a power of the resultant signal occurring with change in the combination of attenuation factors. At this time, the signal received from the mobile station by each slave unit increases its power with decreasing distance of the slave unit to the mobile station; therefore, distances from the mobile station to the respective slave units are estimated based on the information about the magnitudes of the powers, and the location of the mobile station is suitably estimated thereby.

公开(公告)号：US20050230686A1

公开(公告)日：2005-10-20

申请号：US11108906

申请日：2005-04-19

申请人： Jun Kojima ,  Takeshi Endo ,  Eiichi Okuno ,  Yoshihito Mitsuoka ,  Yoshiyuki Hisada ,  Hideo Matsuki

发明人： Jun Kojima ,  Takeshi Endo ,  Eiichi Okuno ,  Yoshihito Mitsuoka ,  Yoshiyuki Hisada ,  Hideo Matsuki

IPC分类号： H01L21/04 ,  H01L21/336 ,  H01L29/04 ,  H01L29/15 ,  H01L29/24 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/66068 ,  H01L21/02024 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7828

摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

摘要翻译： 碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。

公开(公告)号：US5815112A

公开(公告)日：1998-09-29

申请号：US759528

申请日：1996-12-05

申请人： Kunihiko Sasaki ,  Masanobu Yukumatsu ,  Toshiya Saito ,  Hideo Matsuki ,  Hiroshi Hazumi

发明人： Kunihiko Sasaki ,  Masanobu Yukumatsu ,  Toshiya Saito ,  Hideo Matsuki ,  Hiroshi Hazumi

IPC分类号： H01Q3/24 ,  G01S7/03 ,  G01S7/285 ,  G01S13/02 ,  G01S13/06 ,  G01S13/34 ,  G01S13/44 ,  G01S13/66 ,  G01S13/87 ,  G01S13/93 ,  H01Q21/06 ,  H01Q21/22 ,  H01Q25/02

CPC分类号： G01S13/87 ,  H01Q21/22 ,  H01Q25/02 ,  G01S13/06 ,  G01S13/34 ,  G01S13/4454 ,  G01S13/931 ,  G01S2013/0254 ,  G01S2013/0272

摘要： A planar array antenna comprises a plurality of antenna elements disposed in a predetermined matrix pattern. Feeders extend from a feed to the antenna elements. High-frequency switches cooperatively open or close the feeders connected to antenna elements of at least one row of the matrix pattern located at both a right-end and a left-end regions of an antenna surface. Switching signals are supplied to the high-frequency switches from switching terminals for alternately activating the associated antenna elements, thereby providing two time-divisional array antennas offset in position by a distance corresponding to the width of at least one row of the antenna elements controlled.

摘要翻译： 平面阵列天线包括以预定矩阵图案布置的多个天线元件。 馈线从馈电延伸到天线元件。 高频开关协调地打开或关闭连接到位于天线表面的右端和左端区域的矩阵图案的至少一行的天线元件的馈线。 开关信号从切换端子提供给切换端子，用于交替地激活相关联的天线元件，从而在对应于所控制的天线元件的至少一行的宽度的位置上提供两个时分阵列天线。

公开(公告)号：US4440752A

公开(公告)日：1984-04-03

申请号：US355735

申请日：1982-02-19

申请人： Tomohiko Munakata ,  Katsuyoshi Isagai ,  Yoshifumi Ikeda ,  Junichi Sakai ,  Hideo Matsuki

发明人： Tomohiko Munakata ,  Katsuyoshi Isagai ,  Yoshifumi Ikeda ,  Junichi Sakai ,  Hideo Matsuki

IPC分类号： C07D471/18 ,  A61K35/74 ,  A61P31/04 ,  C07C11/00 ,  C07G11/00 ,  C12P1/04 ,  C12P1/06 ,  C12P17/18 ,  C12R1/465 ,  A61K35/00

CPC分类号： C12R1/38 ,  C12P1/04

摘要： Antibiotics Y-16482 .alpha. and/or Y-16482 .beta., obtained by cultivating a strain belonging to the genus Pseudomonas and capable of producing Y-16482, process of producing either or both of them, and a pharmaceutical composition containing these compounds. Antibiotics Y-16482 .alpha. and/or Y-16482 .beta. show an antibacterial activity to gram-positive and gram-negative bacteria and indicate an antitumor activity to experimental tumors.

摘要翻译： PCT No.PCT / JP81 / 00151 Sec。 371日期1982年2月19日 102（e）日期1982年2月19日PCT提交1981年7月1日PCT公布。 出版物WO82 / 00146 1982年1月21日。抗生素Y-16482α和/或Y-16482β，通过培养属于假单胞菌属并能够生产Y-16482的菌株获得，其生产任一种或两者的方法和药物 含有这些化合物的组合物。 抗生素Y-16482α和/或Y-16482β对革兰氏阳性和革兰氏阴性细菌具有抗菌活性，并表明对实验性肿瘤的抗肿瘤活性。