利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.029 秒)

    SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR AND A METHOD FOR PRODUCING THE SAME
    21.
    发明申请
    SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR AND A METHOD FOR PRODUCING THE SAME 有权
    半导体器件，薄膜晶体管及其制造方法

    公开(公告)号：US20110260157A1

    公开(公告)日：2011-10-27

    申请号：US12599241

    申请日：2008-05-01

    申请人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami ,  Katsunori Honda

    发明人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami ,  Katsunori Honda

    IPC分类号： H01L29/786 ,  H01L21/36 ,  H01L29/26

    CPC分类号： H01L21/02554 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/872

    摘要： A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistor 2 provided with a semiconductor which is composed of a prescribed material and serves as an active layer 41 and a conductor which is composed of a material having the same composition as that of the prescribed material and serves as at least one of a source electrode 51, a drain electrode 53 and a pixel electrode 55, which includes the steps of simultaneously forming into a film an object to be processed and a conductor (a source electrode 51, a source wire 52, a drain electrode 53, a drain wire 54 and a pixel electrode 55) which are composed of the amorphous prescribed material, followed by simultaneous shaping, and crystallizing the object to be processed which has been shaped to allow it to be the active layer 41.

    摘要翻译： 提出了一种半导体器件，薄膜晶体管及其制造方法，其能够降低管理成本，并且能够降低生产步骤以降低生产成本。 一种制造薄膜晶体管2的方法，该薄膜晶体管2设置有由规定材料构成并用作有源层41的半导体以及由具有与规定材料相同成分的材料构成的导体， 源极电极51，漏极电极53和像素电极55中的至少一个，其包括同时形成待处理物体的膜和导体（源电极51，源极线52，漏电极 53，漏极线54和像素电极55），其由非晶态规定材料构成，然后同时成形，并且使已被成形为使其成为有源层41的被处理物体结晶化。

    THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE AND IMAGE DISPLAY APPARATUS, IMAGE DISPLAY APPARATUS AND SEMICONDUCTOR DEVICE
    22.
    发明申请
    THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE AND IMAGE DISPLAY APPARATUS, IMAGE DISPLAY APPARATUS AND SEMICONDUCTOR DEVICE 有权
    薄膜晶体管制造方法，薄膜晶体管，薄膜晶体管基板和图像显示装置，图像显示装置和半导体器件

    公开(公告)号：US20110050733A1

    公开(公告)日：2011-03-03

    申请号：US12526304

    申请日：2008-02-06

    申请人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami

    发明人： Koki Yano ,  Kazuyoshi Inoue ,  Futoshi Utsuno ,  Masashi Kasami

    IPC分类号： G09G5/10

    CPC分类号： C23C14/3414 ,  C23C14/086 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869

    摘要： To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device.In the semiconductor device, a crystalline oxide is used as an N-type transistor and the electron carrier concentration of the crystalline oxide is less than 2×1017/cm3. Furthermore, the crystalline oxide is a polycrystalline oxide containing In and one or more positive divalent elements selected from Zn, Mg, Cu, Ni, Co and Ca, and the atomic ratio In [In] and the positive divalent element [X][X]/([X]+[In]) is 0.0001 to 0.13.

    摘要翻译： 为了提供一种提高稳定性，均匀性，再现性，耐热性，耐久性等的薄膜晶体管的制造方法，薄膜晶体管，薄膜晶体管基板，图像显示装置，图像显示装置和半导体装置 。 在半导体装置中，结晶性氧化物用作N型晶体管，结晶性氧化物的电子载流子浓度小于2×1017 / cm3。 此外，结晶性氧化物是含有In的一种或多种选自Zn，Mg，Cu，Ni，Co和Ca中的一种或多种正的二价元素的多晶氧化物，并且原子比In [In]和正的二价元素[X] [X ] /（[X] + [In]）为0.0001〜0.13。

    FIELD-EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD-EFFECT TRANSISTOR
    23.
    发明申请
    FIELD-EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD-EFFECT TRANSISTOR 有权
    现场效应晶体管，以及生产场效应晶体管的方法

    公开(公告)号：US20100117071A1

    公开(公告)日：2010-05-13

    申请号：US12594432

    申请日：2008-02-28

    申请人： Kazuyoshi Inoue ,  Koki Yano ,  Masashi Kasami

    发明人： Kazuyoshi Inoue ,  Koki Yano ,  Masashi Kasami

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes.A field-effect thin film transistor 1001 includes a gate electrode 1025, an active layer, a source electrode 1022 and a drain electrode 1023, wherein a crystalline oxide 1021 containing indium and having an electron carrier concentration of less than 1018/cm3 is used as the active layer, and the gate electrode 1025 is in self-alignment with the source electrode 1022 and the drain electrode 1023. The crystalline oxide 1021 contains a positive trivalent element different from a positive divalent element or indium.

    摘要翻译： 提供一种提高透明性，电性能，稳定性，均匀性，再现性，耐热性和耐久性的场效应晶体管以及电极之间减小的重叠容量。 场效应薄膜晶体管1001包括栅电极1025，有源层，源电极1022和漏电极1023，其中使用含有铟并且电子载流子浓度小于1018 / cm3的结晶氧化物1021用作 有源层和栅电极1025与源电极1022和漏电极1023自对准。结晶氧化物1021含有与正二价元素或铟不同的正三价元素。