公开(公告)号：US08323075B2

公开(公告)日：2012-12-04

申请号：US12734119

申请日：2007-11-21

申请人： Hisashi Masumura ,  Koji Kitagawa ,  Kouji Morita ,  Hiromi Kishida ,  Satoru Arakawa

发明人： Hisashi Masumura ,  Koji Kitagawa ,  Kouji Morita ,  Hiromi Kishida ,  Satoru Arakawa

IPC分类号： B24B5/00 ,  B24B41/06

CPC分类号： B24B37/30 ,  B24B37/345 ,  Y10T29/49826

摘要： A polishing head having a disklike carrier in which an annular projecting portion and a carrier-engagement portion are formed in a peripheral portion, a disklike head body in which a head-body-engagement portion is formed outside, a diaphragm for connecting the head body with the carrier, a spacer located between the carrier-engagement portion and the head-body-engagement portion in a part of the carrier-engagement portion and/or the head-body-engagement portion, in which the spacer abuts on the carrier-engagement portion and/or the head-body-engagement portion at the time of lifting the head body so that the workpiece is demounted from the polishing pad by lifting the carrier with it inclined. As a result, there is provided a polishing head in which the workpiece can be easily, safely and surely demounted from the polishing pad by lifting the polishing head holding the workpiece without overhanging the polishing head from the turn table and the like.

摘要翻译： 一种抛光头，其具有圆盘状载体，其中环形突出部分和载体接合部分形成在周边部分中，盘状头体，其中头部体接合部分形成在外部;光阑，用于连接头部主体 在载体接合部分和头部本体接合部分之间的间隔件位于载体接合部分和/或头部本体接合部分的一部分中，间隔件邻接在载体接合部分上， 在抬起头部本体时使接合部和/或头体接合部通过使其倾斜地抬起托架而使抛光垫从抛光垫上拆下。 结果，提供了一种研磨头，其中通过提起保持工件的抛光头而不会使抛光头从转台等悬垂，从而可以从抛光垫容易地，安全地和可靠地拆卸工件。

公开(公告)号：US20100291838A1

公开(公告)日：2010-11-18

申请号：US12733535

申请日：2008-10-20

申请人： Hisashi Masumura ,  Kouji Morita ,  Hiromasa Hashimoto ,  Satoru Arakawa ,  Hiromi Kishida

发明人： Hisashi Masumura ,  Kouji Morita ,  Hiromasa Hashimoto ,  Satoru Arakawa ,  Hiromi Kishida

IPC分类号： B24B49/00 ,  B24B37/04 ,  B24B7/22 ,  B24B41/06

CPC分类号： B24B37/30 ,  B24B41/06

摘要： The present invention is a polishing head in which a rubber film is formed in a boot shape in such a manner that a position where the rubber film is held by a mid plate is distantly positioned from a work holding portion; an end portion of the boot shaped rubber film is formed in O-ring shape so that the rubber film is held by the mid plate with decreasing an area of contact between the mid plate and the rubber film as much as possible. As a result, there is provided a polishing head with rubber chuck method in which an occurrence of a surface defect, such as a scratch, on a surface of the work is suppressed as much as possible and the work can be uniformly and stably polished to the outer periphery.

摘要翻译： 本发明是一种研磨头，其中橡胶膜形成为靴形，其中橡胶膜由中间板保持的位置远离工件保持部分; 靴形橡胶膜的端部形成为O形环，使得橡胶膜由中间板保持，尽可能地减小中间板和橡胶膜之间的接触面积。 结果，提供了一种具有橡胶卡盘方法的抛光头，其中尽可能地抑制了在工件的表面上发生诸如划痕的表面缺陷，并且可以将工件均匀且稳定地抛光到 外围。

公开(公告)号：US07740521B2

公开(公告)日：2010-06-22

申请号：US11884833

申请日：2006-03-01

申请人： Hiromasa Hashimoto ,  Yasuharu Ariga ,  Hisashi Masumura ,  Kouzi Kitagawa ,  Toshimasa Kubota ,  Takahiro Matsuda

发明人： Hiromasa Hashimoto ,  Yasuharu Ariga ,  Hisashi Masumura ,  Kouzi Kitagawa ,  Toshimasa Kubota ,  Takahiro Matsuda

IPC分类号： B24B1/00 ,  B24B21/18

CPC分类号： B24B37/30

摘要： The present invention provides a polishing head 1 comprising a carrier 3, a guide ring 4, a dress ring 5, and a head body 2, wherein the head body 2 is rotatable, and holds the carrier 3, the guide ring 4, and the dress ring 5; the head body 2 has a reversed-bowl shape and has a hollow 8; the dress ring, and at least the guide ring or the carrier are held by being coupled to a lower brim of the head body via a diaphragm 6; the hollow of the head body is sealed. During polishing, the pressure of the sealed hollow is adjusted with a pressure regulating mechanism 9 communicating with the hollow, thereby elastically deforming the diaphragm. As a result, a wafer W can be polished while the wafer and the dress ring are pressed with a given pressing force against a polishing pad 11 on a turn table 12 with rotating the wafer held by the carrier and the dress ring. Consequently, there is provided a polishing head or the like with which excessive polishing in the outer periphery of a semiconductor wafer can be prevented and generation of impressions or scratches in the edge portion of the wafer can be prevented effectively.

摘要翻译： 本发明提供了一种抛光头1，其包括载体3，导向环4，连接环5和头部主体2，其中头部主体2可旋转，并且保持载体3，导向环4和 连衣裙5; 头体2具有倒碗形状并具有中空部8; 连接环，并且至少导向环或载体通过隔膜6联接到头本体的下边缘; 头体的中空被密封。 在抛光期间，通过与中空部连通的压力调节机构9来调节密封空心的压力，从而使隔膜弹性变形。 结果，晶片W可以被抛光，同时通过旋转由载体和连接环保持的晶片，在给定的压力下对转台12上的抛光垫11施加压力。 因此，提供了可以防止在半导体晶片的外周中进行过度抛光并且可以有效地防止在晶片的边缘部分产生印模或划痕的抛光头等。

公开(公告)号：US20050014455A1

公开(公告)日：2005-01-20

申请号：US10493494

申请日：2002-10-25

申请人： Hisashi Masumura ,  Kazuya Tomii ,  Shigenao Ito ,  Kenichi Anzai ,  Kenichi Inoue

发明人： Hisashi Masumura ,  Kazuya Tomii ,  Shigenao Ito ,  Kenichi Anzai ,  Kenichi Inoue

IPC分类号： B24B1/00 ,  B24B7/30 ,  B24B37/20 ,  B24B37/24 ,  B24D13/14 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02024 ,  B24B37/042 ,  B24B37/24 ,  Y10T428/249955

摘要： A method for polishing a wafer effectively preventing a sag in an outer peripheral portion of a wafer and a polishing pad for polishing a wafer preferably used in the method for polishing a wafer are provided. The method for polishing a wafer comprises the step of: mirror-polishing a wafer with a main surface of the wafer being in contact with a polishing pad of non-woven fabric impregnated with resin, wherein a ratio of surface roughness of the polishing pad to compressibility thereof {surface roughness Ra (μm)/compressibility (%)} is 3.8 or more.

摘要翻译： 提供了用于抛光晶片的方法，其有效地防止晶片的外周部分的下垂以及用于抛光晶片的抛光垫的抛光垫。 抛光晶片的方法包括以下步骤：将晶片的主表面与浸渍有树脂的无纺织物的抛光垫接触的晶片进行镜面抛光，其中抛光垫的表面粗糙度与 （表面粗糙度Ra（母体）/压缩率（％））为3.8以上。

公开(公告)号：US5951374A

公开(公告)日：1999-09-14

申请号：US789046

申请日：1997-01-28

申请人： Tadahiro Kato ,  Hisashi Masumura ,  Masami Nakano ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hisashi Masumura ,  Masami Nakano ,  Hideo Kudo

IPC分类号： H01L21/683 ,  H01L21/304 ,  H01L21/306 ,  B24B1/00

CPC分类号： H01L21/02024 ,  B24B37/30

摘要： A method of polishing semiconductor wafers includes a double side primary polishing step and a single side secondary polishing step using a single side polishing machine with a wafer holder including a template so bonded on a carrier plate as having one or more wafer receiving holes in which backing pads are disposed respectively for holding the back sides of the respective wafers fittingly received therein. This method makes it to possible to hold a plurality of wafers at one time due to batch processing to thereby improve the productivity, and decrease extremely the generation of the defective dimples in the front side of the wafer. Compared with conventional single side polishing, the flatness level of the wafer polished with the double side polishing machine in this method is improved.

摘要翻译： 抛光半导体晶片的方法包括双面一次抛光步骤和单面二次抛光步骤，其使用单面抛光机，其具有包括模板的晶片保持器，所述晶片保持器结合在载体板上，具有一个或多个晶片接收孔，其中背衬 分别设置衬垫，用于将各个晶片的后侧保持在其中。 该方法使得可以通过批量处理一次保持多个晶片，从而提高生产率，并且极大地减少晶片正面中缺陷凹坑的产生。 与传统的单面抛光相比，该方法中用双面抛光机抛光的晶片的平坦度提高。

公开(公告)号：US5942445A

公开(公告)日：1999-08-24

申请号：US823746

申请日：1997-03-25

申请人： Tadahiro Kato ,  Hisashi Masumura ,  Sadayuki Okuni ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hisashi Masumura ,  Sadayuki Okuni ,  Hideo Kudo

IPC分类号： B24B1/00 ,  C30B33/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02013 ,  C30B33/00 ,  H01L21/02008 ,  H01L21/02019

摘要： According to the invention, the flatness and quality can be improved while simplifying the process even when large size wafers of 200 to 300 mm or above are processed. Basic steps involved are a slicing step E for obtaining thin disc-shape wafers by slicing, a chamfering step F for chamfering the sliced wafers, a flattening step G for flattening the chamfered wafers, an alkali etching step H for removing process damage layers from the flattened wafers, and a double-side polishing step K of simultaneously polishing the two sides of the etched wafers. If necessary, a plasma etching step is used in lieu of the flattening and etching steps G and H respectively.

摘要翻译： 根据本发明，即使处理200〜300mm以上的大尺寸晶片，也能够在简化工序的同时提高平坦度和质量。 所涉及的基本步骤是通过切片获得薄盘形晶片的切片步骤E，用于倒角切片晶片的倒角步骤F，用于使倒角晶片平坦化的平坦化步骤G，用于从工艺损伤层去除工艺损伤层的碱蚀刻步骤H 平坦化的晶片，以及双面研磨工序K，同时抛光被蚀刻的晶片的两面。 如果需要，分别使用等离子体蚀刻步骤代替平坦化和蚀刻步骤G和H.

公开(公告)号：US5759087A

公开(公告)日：1998-06-02

申请号：US435656

申请日：1995-05-05

申请人： Hisashi Masumura ,  Masami Nakano ,  Hideo Kudo

发明人： Hisashi Masumura ,  Masami Nakano ,  Hideo Kudo

IPC分类号： H01L21/304 ,  H01L21/306 ,  H01L21/322

CPC分类号： H01L21/02024 ,  B24B37/042 ,  H01L21/3221

摘要： A method for inducing damage for gettering to the rear surface of a single crystal silicon wafer by polishing the rear surface, which can provide a good gettering effect to the wafer and can also depress dusting characteristics of the rear surface of the wafer, is disclosed. The method comprises the steps of; moving the wafer on an abrasive cloth relatively, and supplying an abrasive liquid having a pH in the range of 4-9 which contains silica particles having an average diameter in the range of 0.1-10 .mu.m as abrasive grains, between the wafer and the abrasive cloth.

摘要翻译： 公开了一种通过抛光后表面而引起对单晶硅晶片背表面吸引的损伤的方法，其可以为晶片提供良好的吸气效果，并且还可以抑制晶片后表面的除尘特性。 该方法包括以下步骤： 相对地将研磨布移动到晶片上，并且将晶片和晶片之间的平均粒径为0.1-10μm的二氧化硅粒子作为磨粒供给pH为4-9的研磨液 砂布。

公开(公告)号：US5447890A

公开(公告)日：1995-09-05

申请号：US210437

申请日：1994-03-21

申请人： Tadahiro Kato ,  Sunao Shima ,  Masami Nakano ,  Hisashi Masumura ,  Hideo Kudo

发明人： Tadahiro Kato ,  Sunao Shima ,  Masami Nakano ,  Hisashi Masumura ,  Hideo Kudo

IPC分类号： H01L21/02 ,  H01L21/302 ,  H01L21/304

CPC分类号： H01L21/02008 ,  Y10S148/138 ,  Y10S438/974

摘要： A wafer which allows manufacture of a device to proceed at an exalted yield by preventing the resolution of exposure at the step of photolithography during the manufacture of the device from being impaired is obtained by a method which comprises a slicing step for slicing a single crystal ingot thereby obtaining wafers of the shape of a thin disc, a chamfering step for chamfering the wafer obtained by the slicing step, a lapping step for imparting a flat surface to the chamfered wafer, an etching step for removing mechanical strain remaining in the lapped wafer, an obverse surface-polishing step for polishing one side of the etched wafer, and a cleaning step for cleaning the polished wafer, which method is characterized by interposing between the etching step and the obverse surface-polishing step a reverse surface-preparing step for preparing the shape of the reverse side of the wafer.

摘要翻译： 通过包括用于切割单晶锭的切片步骤的方法，获得了通过防止在制造器件的光刻期间在光刻步骤中的曝光的分辨率而以制造器件以高产量进行制造的晶片 从而获得薄盘形状的晶片，用于对通过切片步骤获得的晶片进行倒角的倒角步骤，用于向倒角晶片赋予平坦表面的研磨步骤，用于去除在重叠晶片中残留的机械应变的蚀刻步骤， 用于抛光被蚀刻的晶片的一侧的正面抛光步骤和用于清洁抛光的晶片的清洁步骤，该方法的特征在于介于蚀刻步骤和正面抛光步骤之间，用于制备 晶片背面的形状。

公开(公告)号：US20140101925A1

公开(公告)日：2014-04-17

申请号：US14117566

申请日：2012-05-28

申请人： Hisashi Masumura

发明人： Hisashi Masumura

IPC分类号： B23Q3/10

CPC分类号： B23Q3/107 ,  B24B37/30 ,  H01L21/02024 ,  H01L22/12 ,  H01L22/20 ,  Y10T29/49998

摘要： A polishing head configured to hold a workpiece at the time of polishing the workpiece by bringing a front surface of the workpiece into sliding contact with a polishing pad attached to on a turn table, the polishing head includes: a workpiece-holding board configured to hold a back surface of the workpiece, the workpiece-holding board being flexible and being composed of ceramics; a sealed space defined on a surface of the workpiece-holding board on an opposite side of a surface on which the workpiece is held; and a pressure-controlling device configured to control a pressure in the sealed space, the polishing head being capable of adjusting a shape of the flexible workpiece-holding board into a convex shape or a concave shape by controlling a pressure in the sealed space by the pressure-controlling device.

摘要翻译： 一种抛光头，其被构造成通过使所述工件的前表面与附接在转台上的抛光垫滑动接触而在抛光所述工件时保持工件，所述抛光头包括：工件保持板，其被配置为保持 工件的后表面，工件保持板是柔性的，由陶瓷组成; 密封空间，限定在所述工件保持板的与保持所述工件的表面相反的一侧的表面上; 以及压力控制装置，其被配置为控制所述密封空间中的压力，所述抛光头能够通过控制所述密封空间中的压力来将所述柔性工件保持板的形状调整为凸形或凹形 压力控制装置。

公开(公告)号：US08092281B2

公开(公告)日：2012-01-10

申请号：US12311690

申请日：2007-10-18

申请人： Hisashi Masumura ,  Koji Kitagawa ,  Kouji Morita ,  Hiromi Kishida ,  Satoru Arakawa

发明人： Hisashi Masumura ,  Koji Kitagawa ,  Kouji Morita ,  Hiromi Kishida ,  Satoru Arakawa

IPC分类号： B24B5/35

CPC分类号： B24B37/30

摘要： The present invention is a polishing head provided with an annular rigid ring, a rubber film bonded to the rigid ring with a uniform tension, a mid plate joined to the rigid ring and forming a space portion together with the rubber film and the rigid ring, and an annular template provided concentrically with the rigid ring in a peripheral portion on a lower face part of the rubber film and having an outer diameter larger than an inner diameter of the rigid ring, in which a pressure of the space portion can be changed by a pressure adjustment mechanism, a back face of a work is held on the lower face part of the rubber film, and a surface of the work is brought into sliding contact with the polishing pad attached onto a turn table for performing polishing, and an inner diameter of the template is smaller than an inner diameter of the rigid ring, and a ratio between an inner diameter difference between the rigid ring and the template and a difference between the inner diameter and an outer diameter of the template is 26% or more and 45% or less. Thereby, a polishing head and the like that can obtain constant flatness stably can be provided.

摘要翻译： 本发明是一种抛光头，其具有环形刚性环，橡胶膜以均匀的张力粘合到刚性环上，中间板与刚性环接合并与橡胶膜和刚性环一起形成空间部分， 以及环形模板，其与所述刚性环同心地设置在所述橡胶膜的下表面部分上的周边部分中，并且具有大于所述刚性环的内径的外径，其中所述空间部分的压力可以通过 压力调节机构，工件的背面被保持在橡胶膜的下表面部分上，并且工件的表面与附着在用于抛光的转台上的抛光垫滑动接触，并且内部 模板的直径小于刚性环的内径，刚性环与模板之间的内径差与内径与外径之间的差 模板的直径为26％以上且45％以下。 由此，可以提供能够稳定地获得恒定的平坦度的抛光头等。