PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS
    21.
    发明申请
    PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS 有权
    多层耐蚀系统多光照的组合物和方法

    公开(公告)号:US20090155715A1

    公开(公告)日:2009-06-18

    申请号:US12356187

    申请日:2009-01-20

    IPC分类号: G03F7/20 G03F7/004

    摘要: A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

    摘要翻译: 一种方法和抗蚀剂组合物。 抗蚀剂组合物包括具有内酯部分的重复单元的聚合物,能够产生碱的热碱发生剂和感光酸产生剂。 聚合物具有基本上可溶于第一溶剂的性质,并且在加热聚合物之后变得基本上不溶。 该方法包括形成包含聚合物的光致抗蚀剂膜,能够释放碱的热碱发生器,光敏酸产生剂和溶剂。 该影片被图案化成像。 成像包括将膜暴露于辐射,导致产生酸催化剂。 该膜在水性碱中显影,导致去除碱溶性区域并形成图案层。 图案化层被烘烤高于该温度,导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

    METHOD FOR SELECTIVELY ADJUSTING LOCAL RESIST PATTERN DIMENSION WITH CHEMICAL TREATMENT
    22.
    发明申请
    METHOD FOR SELECTIVELY ADJUSTING LOCAL RESIST PATTERN DIMENSION WITH CHEMICAL TREATMENT 有权
    选择性地调整具有化学处理的局部电阻图案尺寸的方法

    公开(公告)号:US20100209853A1

    公开(公告)日:2010-08-19

    申请号:US12371956

    申请日:2009-02-17

    IPC分类号: G03F7/26

    CPC分类号: G03F7/40 G03F7/0035

    摘要: A method forms a first patterned mask (comprising rectangular features and/or rounded openings) on a planar surface and forms a second patterned mask on the first patterned mask and the planar surface. The second patterned mask covers protected portions of the first patterned mask and the second patterned mask reveals exposed portions of the first patterned mask. The method treats the exposed portions of the first patterned mask with a chemical treatment that reduces the size of the exposed portions to create an altered first patterned mask.

    摘要翻译: 一种方法在平坦表面上形成第一图案化掩模(包括矩形特征和/或圆形开口)并且在第一图案化掩模和平面表面上形成第二图案化掩模。 第二图案化掩模覆盖第一图案化掩模的受保护部分,并且第二图案化掩模揭示第一图案化掩模的暴露部分。 该方法通过减少暴露部分的尺寸以产生改变的第一图案化掩模的化学处理来处理第一图案化掩模的暴露部分。

    Method for selectively adjusting local resist pattern dimension with chemical treatment
    23.
    发明授权
    Method for selectively adjusting local resist pattern dimension with chemical treatment 有权
    通过化学处理选择性地调整局部抗蚀剂图案尺寸的方法

    公开(公告)号:US08163466B2

    公开(公告)日:2012-04-24

    申请号:US12371956

    申请日:2009-02-17

    CPC分类号: G03F7/40 G03F7/0035

    摘要: A method forms a first patterned mask (comprising rectangular features and/or rounded openings) on a planar surface and forms a second patterned mask on the first patterned mask and the planar surface. The second patterned mask covers protected portions of the first patterned mask and the second patterned mask reveals exposed portions of the first patterned mask. The method treats the exposed portions of the first patterned mask with a chemical treatment that reduces the size of the exposed portions to create an altered first patterned mask.

    摘要翻译: 一种方法在平坦表面上形成第一图案化掩模(包括矩形特征和/或圆形开口)并且在第一图案化掩模和平面表面上形成第二图案化掩模。 第二图案化掩模覆盖第一图案化掩模的受保护部分,并且第二图案化掩模揭示第一图案化掩模的暴露部分。 该方法通过减少暴露部分的尺寸以产生改变的第一图案化掩模的化学处理来处理第一图案化掩模的暴露部分。

    METHODS OF PATTERNING SELF-ASSEMBLY NANO-STRUCTURE AND FORMING POROUS DIELECTRIC
    24.
    发明申请
    METHODS OF PATTERNING SELF-ASSEMBLY NANO-STRUCTURE AND FORMING POROUS DIELECTRIC 审中-公开
    自组装纳米结构和形成多孔介质的方法

    公开(公告)号:US20090001045A1

    公开(公告)日:2009-01-01

    申请号:US11769126

    申请日:2007-06-27

    IPC分类号: H01B13/00

    摘要: Methods of patterning a self-assembly nano-structure and forming a porous dielectric are disclosed. In one aspect, the method includes providing a hardmask over an underlying layer; predefining an area with a photoresist on the hardmask that is to be protected during the patterning; forming a layer of the copolymer over the hardmask and the photoresist; forming the self-assembly nano-structure from the copolymer; and etching to pattern the self-assembly nano-structure.

    摘要翻译: 公开了自组装纳米结构图案化和形成多孔电介质的方法。 一方面,该方法包括在下层上提供硬掩模; 在图案化期间预定义在要被保护的硬掩模上的光致抗蚀剂的区域; 在硬掩模和光致抗蚀剂上形成共聚物层; 从共聚物形成自组装纳米结构; 并蚀刻以形成自组装纳米结构。

    Integration process to improve focus leveling within a lot process variation
    25.
    发明授权
    Integration process to improve focus leveling within a lot process variation 有权
    整合过程可以在很多过程变化中提高焦点调平

    公开(公告)号:US08395228B2

    公开(公告)日:2013-03-12

    申请号:US12941375

    申请日:2010-11-08

    IPC分类号: H01L21/02

    摘要: A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a semiconductor substrate; forming an anti-reflective coating (ARC) layer on the combined organic NIR-absorption and the inorganic or metallic NIR-absorption hardmask; and forming a photoresist layer on the ARC layer. A semiconductor structure is also described including a substrate, a resist layer located over the structure; and an absorptive layer located over the substrate. The absorptive layer includes an inorganic or metallic NIR-absorbing hardmask layer.

    摘要翻译: 描述了改善半导体晶片的聚焦调平响应的方法。 该方法包括在半导体衬底上组合有机和无机或金属近红外(NIR)硬掩模; 在组合的有机NIR吸收和无机或金属NIR吸收硬掩模上形成抗反射涂层(ARC)层; 以及在所述ARC层上形成光致抗蚀剂层。 还描述了半导体结构,其包括基板,位于结构上方的抗蚀剂层; 以及位于衬底上方的吸收层。 吸收层包括无机或金属NIR吸收硬掩模层。

    Near-Infrared Absorbing Film Compositions
    27.
    发明申请
    Near-Infrared Absorbing Film Compositions 有权
    近红外吸收膜组合物

    公开(公告)号:US20110042771A1

    公开(公告)日:2011-02-24

    申请号:US12542970

    申请日:2009-08-18

    摘要: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

    摘要翻译: 一种可固化液体制剂,其包含:(i)一种或多种近红外吸收聚甲炔染料; (ii)一种或多种可交联聚合物; 和(iii)一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底,以及在近红外吸收膜位于微电子衬底之间的情况下,用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

    Near-Infrared Absorbing Film Compositions
    28.
    发明申请
    Near-Infrared Absorbing Film Compositions 有权
    近红外吸收膜组合物

    公开(公告)号:US20130001484A1

    公开(公告)日:2013-01-03

    申请号:US13608409

    申请日:2012-09-10

    IPC分类号: G02B5/24

    CPC分类号: G03F7/091 G03F9/7026

    摘要: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

    摘要翻译: 包含至少(i)一种或多种近红外吸收性三苯胺类染料的可固化液体制剂,和(ii)一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底,以及在近红外吸收膜位于微电子衬底之间的情况下,用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

    Near-Infrared Absorbing Film Compositions
    30.
    发明申请
    Near-Infrared Absorbing Film Compositions 有权
    近红外吸收膜组合物

    公开(公告)号:US20110042653A1

    公开(公告)日:2011-02-24

    申请号:US12543003

    申请日:2009-08-18

    CPC分类号: G03F7/091 G03F9/7026

    摘要: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

    摘要翻译: 包含至少(i)一种或多种近红外吸收性三苯胺类染料的可固化液体制剂,和(ii)一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底,以及在近红外吸收膜位于微电子衬底之间的情况下,用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。