公开(公告)号：US07956365B2

公开(公告)日：2011-06-07

申请号：US12329770

申请日：2008-12-08

Applicant: Hui Ching Feng ,  Kuo-Chin Huang ,  Shyi-Ming Pan ,  Hung-Li Pan

Inventor： Hui Ching Feng ,  Kuo-Chin Huang ,  Shyi-Ming Pan ,  Hung-Li Pan

IPC: H01L29/26 ,  H01L23/12

CPC classification number: H01L25/0753 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/4847 ,  H01L2224/49107 ,  Y10S257/918

Abstract: An alternating current (AC) light emitting device is revealed. The AC light emitting device includes a substrate and a plurality of light emitting units arranged on the substrate. The light emitting unit consists of a first semiconductor layer, a light emitting layer, a second semiconductor layer, at least one electrode and at least one second electrode respectively arranged on the first semiconductor layer and the second semiconductor layer from bottom to top. The plurality of light emitting units is coupled to at least one adjacent light emitting unit by a plurality of conductors. By the plurality of conductors that connect light emitting units with at least one adjacent light emitting unit, an open circuit will not occur in the AC light emitting device once one of the conductors is broken.

Abstract translation: 发现交流（AC）发光器件。 AC发光装置包括基板和布置在基板上的多个发光单元。 发光单元由第一半导体层，发光层，第二半导体层，至少一个电极和至少一个第二电极组成，第一半导体层，第一半导体层和第二半导体层分别从底部到顶部布置。 多个发光单元通过多个导体耦合到至少一个相邻的发光单元。 通过将发光单元与至少一个相邻的发光单元连接的多个导体，一旦导体断开，AC发光器件将不会发生开路。

公开(公告)号：US20100081220A1

公开(公告)日：2010-04-01

申请号：US12552368

申请日：2009-09-02

Applicant: Wei-Kang Cheng ,  Jia-Lin Li ,  Shyi-Ming Pan ,  Kuo-Chin Huang

Inventor： Wei-Kang Cheng ,  Jia-Lin Li ,  Shyi-Ming Pan ,  Kuo-Chin Huang

IPC: H01L21/56

CPC classification number: H01L25/0753 ,  H01L33/486 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract translation: 本发明涉及发光二极管（LED）及其制造方法。 LED包括LED管芯，一个或多个金属焊盘和荧光层。 本发明的特征包括为了方便后续的布线和包装过程，将金属垫留下来露出。 此外，本发明提供的LED是单一的混合芯片，其可以直接包装而不需要在包装胶上涂布荧光粉。 由于荧光层和包装胶不是同时处理并且具有不同的材料，所以可以有效地降低封装LED中的应力问题。

公开(公告)号：US20100078667A1

公开(公告)日：2010-04-01

申请号：US12547571

申请日：2009-08-26

Applicant: Wei-Kang Cheng ,  Jia-Lin Li ,  Shyi-Ming Pan ,  Kuo-Chin Huang

Inventor： Wei-Kang Cheng ,  Jia-Lin Li ,  Shyi-Ming Pan ,  Kuo-Chin Huang

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/486 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a light-emitting diode (LED).The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract translation: 本发明涉及一种发光二极管（LED）。该LED包括一个LED管芯，一个或多个金属焊盘和荧光层。 本发明的特征包括为了方便后续的布线和包装过程，将金属垫留下来露出。 此外，本发明提供的LED是单一的混合芯片，其可以直接包装而不需要在包装胶上涂布荧光粉。 由于荧光层和包装胶不是同时处理并且具有不同的材料，所以可以有效地降低封装LED中的应力问题。

公开(公告)号：US07635871B2

公开(公告)日：2009-12-22

申请号：US12106277

申请日：2008-04-19

Applicant: Shyi-Ming Pan ,  Wei-Kang Cheng ,  Kuo-Chin Huang

Inventor： Shyi-Ming Pan ,  Wei-Kang Cheng ,  Kuo-Chin Huang

IPC: H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L33/44 ,  H01L33/22 ,  H01L33/508 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45139 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/00

Abstract: A light emitting diode (LED) with higher illumination efficiency is revealed. The LED includes a LED chip and an optical layer arranged on the bottom of the LED chip. The optical layer is a light-guiding layer, a light reflective layer or an energy-conversion layer that increases light emitting efficiency of the LED. Furthermore, a rough layer is disposed between the LED chip and the optical layer so as to increase surface area of the LED chip. Thus light emitted from the LED chip enters the optical layer more easily and the illumination efficiency of the LED is increased.

Abstract translation: 揭示了具有较高照明效率的发光二极管（LED）。 LED包括配置在LED芯片底部的LED芯片和光学层。 光学层是增加LED的发光效率的光导层，光反射层或能量转换层。 此外，在LED芯片和光学层之间设置粗糙层以增加LED芯片的表面积。 因此，从LED芯片发出的光更容易进入光学层，并且LED的照明效率提高。

公开(公告)号：US20080303034A1

公开(公告)日：2008-12-11

申请号：US11979963

申请日：2007-11-13

Applicant: Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

Inventor： Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

IPC: H01L33/00

CPC classification number: H01L33/405 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.

Abstract translation: 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。 因此，电流在导电层上有效地分布。 因此，提高了LED的亮度和效率。 此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。

公开(公告)号：USD428760S

公开(公告)日：2000-08-01

申请号：US102278

申请日：1999-03-22

Applicant: Kuo-Chin Huang

Designer： Kuo-Chin Huang

公开(公告)号：USD364240S

公开(公告)日：1995-11-14

申请号：US33699

申请日：1995-01-18

Applicant: Kuo-Chin Huang

Designer： Kuo-Chin Huang