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公开(公告)号：US20230375879A1
公开(公告)日：2023-11-23
申请号：US18247782
申请日：2020-10-06
Applicant: LG ELECTRONICS INC.
Inventor： Sungmin PARK , Wonseok CHOI , Soohyun KIM
IPC: G02F1/13357 , H01L27/12
CPC classification number: G02F1/133611 , G02F1/133603 , H01L27/124 , H01L25/167
Abstract: The present invention is applicable to a display device-related technical field, and relates to, for example, a flat lighting device and a display device using a light-emitting diode (LED). The present invention relates to a display device including a plurality of individual unit compartment regions, comprising: at least one light-emitting diode provided in the individual unit compartment regions; a gate-on voltage line connected to the light-emitting diode; a first scan line for applying a common voltage to the plurality of individual unit compartment regions; a second scan line for applying a voltage inverted from the common voltage to the plurality of individual unit compartment regions; a data line for applying individual switching voltages to the plurality of individual unit compartment regions; a driving unit including a driving MOSFET device connected to the light-emitting diode; and a switching unit including a switching MOSFET device connected to the first scan line and the data line to perform a switching operation.
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公开(公告)号：US20230045160A1
公开(公告)日：2023-02-09
申请号：US17778691
申请日：2019-11-26
Applicant: LG ELECTRONICS INC.
Inventor： Soohyun KIM , Dohan KIM , Wonseok CHOI , Youngdo KIM
IPC: H01L33/00 , H01L25/075 , G01R27/02 , G01R1/073
Abstract: Discussed is a method of manufacturing a display device, the method including: introducing semiconductor light emitting devices including a magnetic material into a fluid chamber; transferring a substrate to the fluid chamber, the substrate including assembly electrodes, an insulating layer covering the assembly electrodes, and open holes in the insulating layer and exposing portions of both ends of the assembly electrodes; applying a magnetic force to the semiconductor light emitting devices introduced into the fluid chamber to move the semiconductor light emitting devices in one direction; and forming an electric field so that the moving semiconductor light emitting devices are disposed at preset positions of the substrate, wherein a probe pin is in contact with the assembly electrodes exposed through the open holes to individually apply a voltage to the assembly electrodes to form the electric field.
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公开(公告)号：US20220415859A1
公开(公告)日：2022-12-29
申请号：US17619549
申请日：2019-07-01
Applicant: LG ELECTRONICS INC.
Inventor： Wonseok CHOI , Soohyun KIM , Sungmin PARK
IPC: H01L25/075 , H01L21/683 , H01L33/62
Abstract: Disclosed in the present specification are a micro LED display device in which an assembly electrode capable of forming a non-uniform electric field is assembled in a provided assembly hole, and a manufacturing method therefor. The display device according to one embodiment of the present invention comprises: a substrate; a first assembly electrode and a second assembly electrode arranged to be spaced apart on the substrate; an insulating layer deposited on top of the first assembly electrode and the second assembly electrode; an assembly hole defining a pixel area formed on the insulating layer; a semiconductor light-emitting element assembled in the assembly hole; and a wiring electrode electrically connected to the semiconductor light-emitting element, wherein the first assembly electrode and the second assembly electrode have a pattern for generating non-uniform electric field in the assembly hole by means of applied voltage, and the semiconductor light-emitting element is assembled, on the basis of the non-uniform electric field, at a specific location in the assembly hole after moving in a specific direction.
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公开(公告)号：US20170018663A1
公开(公告)日：2017-01-19
申请号：US15276884
申请日：2016-09-27
Applicant: LG ELECTRONICS INC.
Inventor： Wonseok CHOI , Kwangsun JI , Heonmin LEE , Hojung SYN , Junghoon CHOI , Hyunjin YANG
IPC: H01L31/0216 , H01L31/072 , H01L31/0368 , H01L31/0224 , H01L31/0376
CPC classification number: H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022441 , H01L31/02366 , H01L31/0288 , H01L31/03529 , H01L31/0368 , H01L31/0376 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0747 , H01L31/1804 , Y02E10/547
Abstract: A solar cell includes a substrate; a first passivation layer on a first surface of the substrate; a first field region on the first surface of the substrate; an anti-reflection layer on the first passivation layer; a second passivation layer on a second surface of the substrate; an emitter region on the second passivation layer, the emitter region forming a p-n junction and a hetero-junction junction with the substrate; a second field region on the second passivation layer, the second field region forming a hetero-junction with the substrate; a first electrode contacted to the emitter region; a second electrode contacted to the second field region; a spacing between the emitter region and the second field region; and a third passivation layer on the second surface of the substrate at the spacing.
Abstract translation: 太阳能电池包括基板; 在所述基板的第一表面上的第一钝化层; 在所述基板的第一表面上的第一场区; 在第一钝化层上的抗反射层; 在所述衬底的第二表面上的第二钝化层; 在所述第二钝化层上的发射极区域，所述发射极区域与所述衬底形成p-n结和异质结结; 在所述第二钝化层上的第二场区，所述第二场区与所述衬底形成异质结; 与发射极区域接触的第一电极; 与第二场区接触的第二电极; 发射极区域和第二场区域之间的间隔; 以及在所述基板的所述第二表面上的间隔处的第三钝化层。
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公开(公告)号：US20250015057A1
公开(公告)日：2025-01-09
申请号：US18588902
申请日：2024-02-27
Applicant: LG ELECTRONICS INC.
Inventor： Byoungkwon CHO , Hyeyoung YANG , Wonseok CHOI
IPC: H01L25/075 , H01L33/46 , H01L33/62
Abstract: A semiconductor light emitting device includes a light emitting layer, a first electrode on a lower side of the light emitting layer, a second electrode on an upper side of the light emitting layer, an insulating layer on a side portion of the light emitting layer and overlapping at least a portion of the first electrode and overlapping at least a portion of the second electrode and a plurality of metal layers spaced apart from each other in the insulating layer, the plurality of metal layers including a first metal layer including a reflective layer and a second metal layer including a magnetic layer.
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Patent Agency Ranking
公开(公告)号：US20240372041A1
公开(公告)日：2024-11-07
申请号：US18685024
申请日：2021-08-20
Applicant: LG ELECTRONICS INC.
Inventor： Byoungkwon CHO , Jaehyuk LEE , Wonseok CHOI , Chilkeun PARK
IPC: H01L33/42 , H01L25/075 , H01L33/54 , H01L33/62
Abstract: A lens driving device according to an embodiment includes a substrate, a first frame including a lens and disposed on the substrate, a second frame on which the first frame is placed and a third frame on which the second frame is disposed. The first frame may move in a Z-axis direction, the second frame may tilt in X-axis and Y-axis directions and rotate around the Z axis, and the third frame may include a stopper structure to limit tilting and rotation of the second frame.
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公开(公告)号：US20240322084A1
公开(公告)日：2024-09-26
申请号：US18573895
申请日：2021-07-05
Applicant: LG ELECTRONICS INC.
Inventor： Jinsung KIM , Wonjae CHANG , Wonseok CHOI
CPC classification number: H01L33/44 , H01L25/167
Abstract: A semiconductor light emitting device includes a light emitting structure having a first region and a second region along a major axis direction, an insulating layer surrounding a side surface of the first region, and a first electrode surrounding a side surface of the second region. The thickness of the insulating layer is the same as the thickness of the first electrode. Therefore, when implementing a display, lighting defects can be prevented and luminance deviation can be eliminated, thereby improving image quality.
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28.发明公开公开(公告)号：US20240038825A1
公开(公告)日：2024-02-01
申请号：US18227788
申请日：2023-07-28
Applicant: LG ELECTRONICS INC.
Inventor： Byoungkwon CHO , Wonseok CHOI , Jeonghyo KWON , Sungmin PARK
CPC classification number: H01L27/156 , G09G3/32 , H01L33/24 , H01L33/44 , H01L33/405 , G09G2300/0842
Abstract: The embodiment relates to a semiconductor light emitting device for a display pixel and a display device including the same. A semiconductor light emitting device for a display pixel according to an embodiment can include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer disposed therebetween, a passivation layer disposed on the light emitting structure, and a second electrode layer disposed under the light emitting structure. The light emitting structure may include a rounding semiconductor layer in which an upper surface thereof is partially rounded.
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公开(公告)号：US20230401993A1
公开(公告)日：2023-12-14
申请号：US18028257
申请日：2020-09-25
Applicant: LG ELECTRONICS INC.
Inventor： Wonseok CHOI , Sungmin PARK , Soohyun KIM
CPC classification number: G09G3/32 , G09G3/2092 , G09G2320/0626 , G09G2310/0278 , H01L33/0004
Abstract: The present invention is applicable to a display device-related technical field, and relates to, for example, a flat lighting device and a display device using a light-emitting diode (LED). The present invention relates to a display device including a plurality of individual unit compartment regions, comprising: at least one light-emitting diode provided in the individual unit compartment regions; a gate-on voltage line connected to the light-emitting diode; a scan line for applying a common voltage to the plurality of individual unit compartment regions; a data line for applying individual switching voltages to the plurality of individual unit compartment regions; a driving unit including a driving MOSFET device connected to the light-emitting diode; and a switching unit including a switching MOSFET device connected to the scan line and the data line to perform a switching operation.
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公开(公告)号：US20230215982A1
公开(公告)日：2023-07-06
申请号：US18093700
申请日：2023-01-05
Applicant: LG ELECTRONICS INC. , LG Display Co., Ltd.
Inventor： Sunyong SONG , Wonseok CHOI , Jeonghyo KWON , Junoh SHIN , Youngdo KIM
CPC classification number: H01L33/382 , H01L33/62
Abstract: Discussed is a display device including a semiconductor light emitting device. A display device can include a substrate, first assembly electrodes, second assembly electrodes and the first assembly electrodes spaced apart from each other on the substrate, an insulating layer disposed on the second assembly electrode, an assembly barrier wall including a predetermined assembly hole and disposed on the insulating layer, a plating layer electrically connected to the first assembly electrode and the second assembly electrode, and a semiconductor light emitting device disposed in the assembly hole and electrically connected to the first assembly electrode and the second assembly electrode by the plating layer.
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