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公开(公告)号:US20160326580A1
公开(公告)日:2016-11-10
申请号:US15216242
申请日:2016-07-21
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Jonathan M. ROTHBERG , Wolfgang HINZ , Kim L. JOHNSON , James BUSTILLO
IPC: C12Q1/68 , G01N27/414 , H01L27/088
CPC classification number: C12Q1/6869 , C12Q1/6874 , G01N27/414 , G01N27/4145 , G01N27/4148 , H01L21/306 , H01L24/18 , H01L24/20 , H01L24/82 , H01L27/088 , H01L29/78 , H01L2224/04105 , H01L2224/16 , H01L2224/76155 , H01L2224/82102 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01052 , H01L2924/01056 , H01L2924/01059 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101 , H01L2924/00
Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
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22.
公开(公告)号:US20140364320A1
公开(公告)日:2014-12-11
申请号:US14293247
申请日:2014-06-02
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Jonathan M. ROTHBERG , Keith G. FIFE , James BUSTILLO , James OWENS
IPC: G01N27/414 , H01L29/66 , C12Q1/68
CPC classification number: G01N27/4145 , C12Q1/6874 , G01N27/414 , H01L29/66825
Abstract: In one embodiment, a device is described. The device includes a material defining a reaction region. The device also includes a plurality of chemically-sensitive field effect transistors have a common floating gate in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region.
Abstract translation: 在一个实施例中,描述了一种装置。 该装置包括限定反应区域的材料。 该器件还包括多个化学敏感的场效应晶体管,其具有与反应区域连通的公共浮动栅极。 该装置还包括电路,以从化学敏感的场效应晶体管获得指示反应区域内的分析物的相应输出信号。
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23.
公开(公告)号:US20140264470A1
公开(公告)日:2014-09-18
申请号:US14198382
申请日:2014-03-05
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. FIFE , Jordan OWENS , Shifeng LI , James BUSTILLO
IPC: G01N27/414
CPC classification number: G01N27/414 , B01L3/502761 , B01L2200/0668 , B01L2300/0636 , B01L2300/0877 , G01N27/4145 , G01N27/4148
Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor. The material comprises a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extends a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric.
Abstract translation: 在一个实施例中,描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口。 该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮动栅极导体的上表面并且沿着开口的侧壁延伸一定距离,该距离由第一电介质的厚度限定。
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公开(公告)号:US20140264464A1
公开(公告)日:2014-09-18
申请号:US13801002
申请日:2013-03-13
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. FIFE , James BUSTILLO , Jordan OWENS
IPC: G01N27/414
CPC classification number: G01N27/414 , G01N27/4145
Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.
Abstract translation: 在一个实施方式中,描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定了延伸到浮动栅极导体的上表面的开口。 导电侧壁间隔物位于开口的侧壁上并与浮栅导体的上表面接触。
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25.
公开(公告)号:US20130244908A1
公开(公告)日:2013-09-19
申请号:US13889025
申请日:2013-05-07
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Jonathan M. ROTHBERG , Wolfgang HINZ , Kim L. JOHNSON , James BUSTILLO
IPC: C12Q1/68
CPC classification number: C12Q1/6869 , C12Q1/6874 , G01N27/414 , G01N27/4145 , G01N27/4148 , H01L21/306 , H01L24/18 , H01L24/20 , H01L24/82 , H01L27/088 , H01L29/78 , H01L2224/04105 , H01L2224/16 , H01L2224/76155 , H01L2224/82102 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01052 , H01L2924/01056 , H01L2924/01059 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , C12Q2565/607 , C12Q2565/301 , C12Q2533/101 , H01L2924/00
Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
Abstract translation: 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET(例如,ISFET)阵列,并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中,chemFET阵列基于监测氢离子浓度(pH),其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。
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公开(公告)号:US20210140918A1
公开(公告)日:2021-05-13
申请号:US17070142
申请日:2020-10-14
Applicant: Life Technologies Corporation
Inventor: Jonathan M. ROTHBERG , Keith G. FIFE , Jordan OWENS , James BUSTILLO
IPC: G01N27/414 , C12Q1/6874 , H01L29/66
Abstract: In one embodiment, a device is described. The device includes a material defining a reaction region. The device also includes a plurality of chemically-sensitive field effect transistors have a common floating gate in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region.
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公开(公告)号:US20190339228A1
公开(公告)日:2019-11-07
申请号:US16459515
申请日:2019-07-01
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Mark MILGREW , Jonathan ROTHBERG , James BUSTILLO
IPC: G01N27/414 , G01N27/27 , C12Q1/6874 , C12Q1/6869
Abstract: Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.
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公开(公告)号:US20190011396A1
公开(公告)日:2019-01-10
申请号:US15971857
申请日:2018-05-04
Applicant: Life Technologies Corporation
Inventor: Jonathan M. ROTHBERG , Mark James MILGREW , Jonathan SCHULTZ , David MARRAN , Todd REARICK , Kim L. JOHNSON , James BUSTILLO
IPC: G01N27/414 , H01L21/82 , C12Q1/6869 , C12Q1/6874
Abstract: An apparatus comprising a chemical field effect transistor array in a circuit-supporting substrate is disclosed. The transistor array has disposed on its surface an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid. The transistor array has a pitch of 10 μm or less and a sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region.
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公开(公告)号:US20180217092A1
公开(公告)日:2018-08-02
申请号:US15831141
申请日:2017-12-04
Applicant: Life Technologies Corporation
Inventor: Wolfgang HINZ , John Matthew MAURO , Shifeng LI , James BUSTILLO
IPC: G01N27/414 , C12Q1/6874 , G01N27/26 , H01L29/78
CPC classification number: G01N27/4148 , C12Q1/6874 , G01N27/26 , G01N27/414 , G01N27/4145 , H01L29/78 , Y10T436/143333
Abstract: The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.
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公开(公告)号:US20180106756A1
公开(公告)日:2018-04-19
申请号:US15700630
申请日:2017-09-11
Applicant: Life Technologies Corporation
Inventor: James LI , Jordan OWENS , James BUSTILLO
IPC: G01N27/414 , G01N27/12
CPC classification number: G01N27/4148 , B01L2300/0636 , G01N27/125 , G01N27/128 , G01N27/4143 , G01N27/4145
Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.
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