公开(公告)号：US20180294187A1

公开(公告)日：2018-10-11

申请号：US15948143

申请日：2018-04-09

Applicant: Lam Research Corporation

Inventor： Shruti Vivek Thombare ,  Raashina Humayun ,  Michal Danek ,  Chiukin Steven Lai ,  Joshua Collins ,  Hanna Bamnolker ,  Griffin John Kennedy ,  Gorun Butail ,  Patrick A. van Cleemput

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/522 ,  H01L23/532

Abstract: Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.

公开(公告)号：US20180114694A1

公开(公告)日：2018-04-26

申请号：US15729081

申请日：2017-10-10

Applicant: Lam Research Corporation

Inventor： Raihan Tarafdar ,  Shruti Thombare ,  Jeong-Seok Na ,  Raashina Humayun ,  Chiukin Steven Lai

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/67

CPC classification number: H01L21/02068 ,  H01L21/67028 ,  H01L21/76861

Abstract: A method for depositing a metal layer on a barrier layer includes a) arranging a substrate in a processing chamber. The substrate has been exposed to at least one of air and/or oxidizing chemistry and includes a barrier layer and one or more underlying layers, wherein the barrier layer includes a material selected from a group consisting of tantalum nitride, titanium nitride, tantalum and titanium. The method includes b) supplying a gas selected from a group consisting of hydrazine, a gas including fluorine species, a gas including chlorine species, derivatives of hydrazine, ammonia, carbon monoxide, a gas including amidinates, and/or a gas including metal organic ligands to the processing chamber for a predetermined period to remove oxidation from the barrier layer. The method includes c) depositing a metal layer on the barrier layer after b). The metal layer includes a metal selected from a group consisting of cobalt, copper, tungsten, ruthenium, rhodium, molybdenum, and nickel.

公开(公告)号：US09748137B2

公开(公告)日：2017-08-29

申请号：US14873152

申请日：2015-10-01

Applicant: Lam Research Corporation

Inventor： Chiukin Steven Lai ,  Jeong-Seok Na ,  Raihan Tarafdar ,  Raashina Humayun ,  Michal Danek

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/285 ,  H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  H01L23/532

CPC classification number: H01L21/76879 ,  C23C16/045 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76876 ,  H01L23/53266

Abstract: Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors. Methods may also involve using a remote plasma source to generate the nitrogen-based plasma. Methods also involve annealing the substrate.

公开(公告)号：US09362163B2

公开(公告)日：2016-06-07

申请号：US14446203

申请日：2014-07-29

Applicant: Lam Research Corporation

Inventor： Michal Danek ,  Juwen Gao ,  Aaron Fellis ,  Francisco Juarez ,  Chiukin Steven Lai

IPC: H01L21/02 ,  H01L21/768 ,  C23G5/00

CPC classification number: H01L21/76841 ,  C23G5/00 ,  H01L21/02063 ,  H01L21/76814

Abstract: Described are cleaning methods for removing contaminants from an electrical contact interface of a partially fabricated semiconductor substrate. The methods may include introducing a halogen-containing species into a processing chamber, and forming an adsorption-limited layer, which includes halogen from the halogen-containing species, atop the electrical contact interface and/or the contaminants thereon. The methods may further include thereafter removing un-adsorbed halogen-containing species from the processing chamber and activating a reaction between the halogen of the adsorption-limited layer and the contaminants present on the electrical contact interface. The reaction may then result in the removal of at least a portion of the contaminants from the electrical contact interface. In some embodiments, the halogen adsorbed onto the surface and reacted may be fluorine. Also described herein are apparatuses having controllers for implementing such electrical contact interface cleaning techniques.

Abstract translation: 描述了从部分制造的半导体衬底的电接触界面去除污染物的清洁方法。 所述方法可以包括将含卤素的物质引入处理室，以及形成吸附限制层，其包括来自含卤物质的卤素，位于电接触界面上和/或其上的污染物上。 所述方法还可以包括从处理室中除去未吸附的含卤物质并且激活吸附限制层的卤素与存在于电接触界面上的污染物之间的反应。 反应可能导致从电接触界面去除至少一部分污染物。 在一些实施方案中，吸附在表面上并被反应的卤素可以是氟。 这里还描述了具有用于实现这种电接触界面清洁技术的控制器的装置。