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141 条记录 (耗时 0.039 秒)

    CHEMICALLY DISORDERED MATERIAL USED TO FORM A FREE LAYER OR A PINNED LAYER OF A MAGNETORESISTANCE (MR) READ ELEMENT
    21.
    发明申请
    CHEMICALLY DISORDERED MATERIAL USED TO FORM A FREE LAYER OR A PINNED LAYER OF A MAGNETORESISTANCE (MR) READ ELEMENT 有权
    用于形成自由层或磁铁层（MR）读取单元的密封层的化学物质

    公开(公告)号：US20080268290A1

    公开(公告)日：2008-10-30

    申请号：US11742313

    申请日：2007-04-30

    申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

    发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  H01L43/08 ,  Y10T428/1121

    摘要： Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co2−x−yMn1+xAl1+y, Co2−x−yMn1+xSi1+y, Co2−x−yMn1+xGe1+y, and Co2−x−yFe1+xSi1+y, where x and y are selected to create an off-stoichiometric alloy having a crystalline structure that is chemically disordered. The chemically disordered magnetic material has a lower spin-polarization than a Heusler alloy, but still exhibits acceptable GMR amplitudes and low spin-torque noise.

    摘要翻译： 公开了磁阻（MR）读取元件和相关的制造方法。 MR读取元件的自由层和/或钉扎层由诸如Co 2-xy Mn 1 + x Al 1 + 1的磁性材料形成， Co 2-xy Mn 1 + x 1 Si 1 + y 2，Co 2-xy > Mn 1 + x 1 Ge + 1 + y＆gt;和Co 2-xy Fe 1 + x Si > 1 + y

    Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media
    22.
    发明授权
    Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media 失效
    具有霍尔效应传感器的磁头和用于检测来自磁记录介质的记录位的电路

    公开(公告)号：US07440227B2

    公开(公告)日：2008-10-21

    申请号：US11069414

    申请日：2005-02-28

    申请人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alvin Gurney

    发明人： Amitava Chattopadhyay ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alvin Gurney

    IPC分类号： G11B5/37

    CPC分类号： G11B5/376

    摘要： A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.

    摘要翻译： 磁头具有采用“霍尔效应”的传感器。 在一个说明性示例中，传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极，它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点，其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。 半导体异质结构包括靠近磁头的空气轴承表面（ABS）的高迁移率二维电子或空穴气体，以便从磁记录钻头暴露于基本垂直于其的磁场线。 有利地，传感器不需要在常规传感器中使用的磁性材料，因此不会与其相关的磁性噪声。

    Magnetic write head having a magnetically anisotropic write pole
    23.
    发明授权
    Magnetic write head having a magnetically anisotropic write pole 失效
    具有磁各向异性写磁极的磁写头

    公开(公告)号：US07382573B2

    公开(公告)日：2008-06-03

    申请号：US11615837

    申请日：2006-12-22

    申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    IPC分类号： G11B5/147

    CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A magnetic write head for magnetic data recording. The magnetic write head has a write pole with a magnetic anisotropy induced by an angled, directional ion milling of a seed layer. The magnetic anisotropy is such that a magnetic easy axis of magnetization is oriented substantially parallel with the air bearing surface (ABS) of the write head. This orientation of the easy axis of magnetization increases the write speed and data rate of the write head by increasing the speed with which the magnetization of the write pole can switch from one direction to another writing.

    摘要翻译： 用于磁数据记录的磁写头。 磁写头具有由种子层的倾斜的定向离子铣削引起的具有磁各向异性的写极。 磁各向异性使得易磁化磁化轴取向为大致平行于写入头的空气轴承表面（ABS）。 易磁化轴的这种取向通过增加写磁极的磁化从一个方向转换到另一个写入的速度来增加写入头的写入速度和数据速率。

    Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure
    26.
    发明授权
    Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure 失效
    电流垂直平面（CPP）磁阻传感器具有改进的反平行销钉结构

    公开(公告)号：US07289304B2

    公开(公告)日：2007-10-30

    申请号：US10977300

    申请日：2004-10-29

    申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

    发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906

    摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure. The AP-pinned structure has two ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer and with their magnetization directions oriented antiparallel. One of the ferromagnetic layers in the AP-pinned structure is the reference layer in contact with the CPP-SV sensor's nonmagnetic electrically conducting spacer layer. In the improved AP-pinned structure each of the ferromagnetic layers has a thickness greater than 30 Å, preferably greater than approximately 50 Å, and the APC layer is either Ru or Ir with a thickness less than 7 Å, preferably about 5 Å or less. The ultrathin APC layer, especially if formed of iridium (Ir), provides significant coupling strength to allow the thick ferromagnetic layers to retain their magnetization directions in a stable antiparallel orientation.

    摘要翻译： 电流垂直于平面的自旋阀（CPP-SV）磁阻传感器具有改进的反平行（AP）钉扎结构。 AP钉扎结构具有由非磁性反平行耦合（APC）层分离并且其磁化方向反平行取向的两个铁磁层。 AP钉扎结构中的一个铁磁层是与CPP-SV传感器的非磁性导电间隔层接触的参考层。 在改进的AP钉扎结构中，每个铁磁层的厚度大于30埃，优选大于约400埃，APC层是厚度小于7埃，优选约5埃或更小的Ru或Ir 。 超薄APC层，特别是如果由铱（Ir）形成，则提供显着的耦合强度，以使厚的铁磁层保持其稳定的反向平行取向的磁化方向。

    Use of greater than about 15 angstrom thick coupling layer in AP-tab magnetic head
    27.
    发明授权
    Use of greater than about 15 angstrom thick coupling layer in AP-tab magnetic head 有权
    在AP-tab磁头中使用大于约15埃厚的耦合层

    公开(公告)号：US07186470B2

    公开(公告)日：2007-03-06

    申请号：US10777830

    申请日：2004-02-11

    申请人： Hardayal Singh Gill ,  Stefan Maat

    发明人： Hardayal Singh Gill ,  Stefan Maat

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3932 ,  Y10T428/1143 ,  Y10T428/1193

    摘要： A magnetic head that uses a thick AP coupling layer in an AP-tab structure. The head includes a free layer having an active area and tab regions on opposite sides of the active area. An antiparallel (AP) coupling layer is formed above the free layer. In one embodiment, the AP coupling layer has a thickness of 15 Å or more. In another embodiment, the AP coupling layer is formed of Ir, and preferably has a thickness of 15 Å or more. A bias layer is formed above each of the tab portions of the free layer, magnetic moments of the tab regions of the free layer being pinned antiparallel to the magnetic moments of the bias layers.

    摘要翻译： 一种磁头，其使用AP接头结构中的厚AP耦合层。 头部包括在活动区域​​的相对侧上具有活动区域和突片区域的自由层。 在自由层上方形成反平行（AP）耦合层。 在一个实施例中，AP耦合层具有15或更大的厚度。 在另一实施例中，AP耦合层由Ir形成，优选地具有15或更大的厚度。 在自由层的每个突片部分上形成偏置层，自由层的突片区域的磁矩与反射层的磁矩反平行地固定。

    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
    28.
    发明申请
    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer 失效
    使用倾斜蚀刻底层的磁性读取传感器，用于在自偏压自由层中诱导单轴磁各向异性

    公开(公告)号：US20060221515A1

    公开(公告)日：2006-10-05

    申请号：US11177990

    申请日：2005-07-07

    申请人： Matthew Carey ,  Jeffrey Childress ,  James Nix ,  Stefan Maat ,  Ian McFadyen

    发明人： Matthew Carey ,  Jeffrey Childress ,  James Nix ,  Stefan Maat ,  Ian McFadyen

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with an anisotropic roughness that induces a magnetic anisotropy in the free layer. The treated layer underlying the free layer can be a spacer layer sandwiched between the free layer and pinned layer or can be a separate underlayer formed opposite the spacer layer. Alternatively, the texturing of an underlayer can be used to induce a magnetic anisotropy in a bias layer that is separated from the free layer by an orthogonal coupling layer. This self biasing of the free layer induced by texturing can also be used in conjunction with biasing from a hard-bias structure.

    摘要翻译： 具有自偏置自由层的磁阻传感器。 自由层被构造在已经通过表面纹理化处理处理的底层上，该表面构造过程用在各自自由层中引起磁各向异性的各向异性粗糙度来构造底层。 自由层下面的处理层可以是夹在自由层和被钉扎层之间的间隔层，或者可以是与间隔层相对形成的单独的下层。 或者，底层的纹理化可以用于在通过正交耦合层与自由层分离的偏压层中引起磁各向异性。 由纹理引起的自由层的这种自偏压也可以与来自硬偏压结构的偏压结合使用。