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    Fabrication of low-cost long wavelength VCSEL with optical confinement control
    23.
    发明授权
    Fabrication of low-cost long wavelength VCSEL with optical confinement control 有权

    公开(公告)号：US11611195B2

    公开(公告)日：2023-03-21

    申请号：US17138623

    申请日：2020-12-30

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Yuri Berk ,  Vladimir Iakovlev ,  Tamir Sharkaz ,  Elad Mentovich ,  Matan Galanty ,  Itshak Kalifa

    IPC: H01S5/00 ,  H01S5/183 ,  H01S5/042 ,  H01S5/343 ,  H01S5/125 ,  H01S5/20 ,  H01S5/30

    Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

    High speed high bandwidth vertical-cavity surface-emitting laser
    24.
    发明授权
    High speed high bandwidth vertical-cavity surface-emitting laser 有权

    公开(公告)号：US11563307B2

    公开(公告)日：2023-01-24

    申请号：US16578583

    申请日：2019-09-23

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Itshak Kalifa ,  Elad Mentovich

    IPC: H01S5/183 ,  H01S5/187 ,  H01S5/32 ,  H01S5/30 ,  H01S5/227

    Abstract: Example vertical cavity surface emitting lasers (VCSELs) include a mesa structure disposed on a substrate, the mesa structure including a first reflector, a second reflector defining at least one diameter, and an active cavity material structure disposed between the first and second reflectors; and a second contact layer disposed at least in part on top of the mesa structure and defining a physical emission aperture having a physical emission aperture diameter. The ratio of the physical emission aperture diameter to the at least one diameter is greater than or approximately 0.172 and/or the ratio of the physical emission aperture diameter to the at least one diameter is less than or approximately 0.36. An example VCSEL includes a substrate; a buffer layer disposed on a portion of the substrate; and an emission structure disposed on the buffer layer.

    FABRICATING SEMICONDUCTOR DEVICES, SUCH AS VCSELS, WITH AN OXIDE CONFINEMENT LAYER
    25.
    发明申请
    FABRICATING SEMICONDUCTOR DEVICES, SUCH AS VCSELS, WITH AN OXIDE CONFINEMENT LAYER 有权

    公开(公告)号：US20220376476A1

    公开(公告)日：2022-11-24

    申请号：US17303050

    申请日：2021-05-19

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Yuri Berk ,  Vladimir Iakovlev ,  Anders Larsson ,  Itshak Kalifa ,  Matan Galanty ,  Isabelle Cestier ,  Elad Mentovich

    IPC: H01S5/183 ,  H01S5/343 ,  H01S5/34

    Abstract: Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.

    Communication between data centers using a multi-core fiber
    26.
    发明授权
    Communication between data centers using a multi-core fiber 有权

    公开(公告)号：US11303379B1

    公开(公告)日：2022-04-12

    申请号：US17160422

    申请日：2021-01-28

    Applicant: MELLANOX TECHNOLOGIES, LTD.

    Inventor： Donald Becker ,  Dimitrios Kalavrouziotis ,  Boaz Atias ,  Itshak Kalifa ,  Tamir Sharkaz ,  Paraskevas Bakopoulos ,  Elad Mentovich

    IPC: H04J14/02 ,  H04B10/2581 ,  H04Q11/00 ,  H04J14/08

    Abstract: A system includes a pair of network devices, a universal multi-core fiber (UMCF) interconnect, and a pair of wavelength-division multiplexing (WDM) devices. Each network device includes (i) first optical communication devices configured to communicate first optical signals having a first carrier wavelength and (ii) second optical communication devices configured to communicate second optical signals having a second carrier wavelength. The universal multi-core fiber (UMCF) interconnect includes multiple cores that are configured to convey the first optical signals and the second optical signals between the network devices, using single-mode propagation for the first optical signals and multi-mode propagation for the second optical signals. Each WDM device is connected between a respective network device and the UMCF interconnect and configured to couple the first and second optical communication devices of the respective network device to the cores in accordance with a defined channel assignment.

    Transducer reliability testing
    28.
    发明授权
    Transducer reliability testing 有权

    公开(公告)号：US10203366B2

    公开(公告)日：2019-02-12

    申请号：US15199105

    申请日：2016-06-30

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Alex Burlak ,  Lion Bassat ,  Itshak Kalifa ,  Kfir Margalit ,  Morees Ghandour ,  Alon Webman ,  Elad Mentovich ,  Sylvie Rockman ,  Evelyn Landman

    IPC: G01R31/26 ,  G01R31/28

    Abstract: A transducer reliability testing and VCSEL failure prediction method are provided. The method includes applying a testing temperature and a constant current to a VCSEL for a testing time. The method monitors a forward voltage of the VCSEL and determines if a first change in forward voltage is above a first predetermined threshold over the testing time and if a second change in forward voltage is above a second predetermined threshold over a portion of the testing time. The method determines failure of the VCSEL if either of these predetermined thresholds are exceeded. The method determines passage of the VCSEL if the first change in the forward voltage and the second change in the forward voltage are both below the first predetermined threshold and the second predetermined threshold, respectively.

    Electro-optic transceiver module with wavelength compensation
    29.
    发明授权
    Electro-optic transceiver module with wavelength compensation 有权

    公开(公告)号：US10177841B2

    公开(公告)日：2019-01-08

    申请号：US15087562

    申请日：2016-03-31

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Elad Mentovich ,  Itshak Kalifa ,  Sylvie Rockman ,  Alon Webman ,  Dalit Kimhi ,  Alex Dikopoltsev

    IPC: H04B10/08 ,  H04B17/00 ,  H04J14/02 ,  H04B10/04 ,  H04B10/079 ,  H04B10/572 ,  H04B10/50 ,  H04B10/25

    Abstract: An electro-optic transceiver module, method of manufacturing, and method of transmitting signals are provided that allow multiple optical signals at different wavelengths (e.g., according to CWDM) to be combined for transmission via a number of optical fibers that is smaller than the number of electrical channels according to which the optical signals were generated. Thus, CWDM may be used in connection with lower-cost VCSEL technology (e.g., as opposed to higher-cost edge-emitting lasers) by providing for wavelength compensation at the VCSEL driver to offset any changes in wavelength that may have otherwise occurred at the VCSELs. In particular, a microcontroller of the electro-optic transceiver module correlates a monitored temperature of the VCSELs to an actual wavelength of the corresponding optical signals transmitted by the respective VCSELS and determined an adjustment in a current supplied by the VCSEL driver to each VCSEL to achieve more precise and consistent wavelengths at the VCSELs.

    Redundant and reconfigurable optical transceiver
    30.
    发明授权
    Redundant and reconfigurable optical transceiver 有权

    公开(公告)号：US09692511B1

    公开(公告)日：2017-06-27

    申请号：US15082313

    申请日：2016-03-28

    Applicant: MELLANOX TECHNOLOGIES, LTD

    Inventor： Alon Webman ,  Evelyn Landman ,  Eyal Waldman ,  Elad Mentovich ,  Sylvie Rockman ,  Itshak Kalifa ,  Yaakov Gridish

    IPC: H04B10/40 ,  H04B10/25

    CPC classification number: H04B10/2504 ,  H04B10/0795 ,  H04B10/40

    Abstract: A reconfigurable and redundant electro-optical connector and corresponding method are provided. The connector may include a first plurality of transducers in communication with a first port and a second plurality of transducers in communication with a second port, the first port and the first transducers defining a first channel and the second port and the second transducers defining a second channel. The connector may include a selective combiner to combine the first optical signals and the second optical signals, and a controller in communication with each of the transducers. The controller may transmit at least a first portion of a first datalink on at least the first channel in a first configuration. The controller may redistribute the first portion of the first datalink onto at least the second channel in a second configuration.

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