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公开(公告)号：US20200381897A1
公开(公告)日：2020-12-03
申请号：US16890149
申请日：2020-06-02
发明人： Isabelle Cestier , Itshak Kalifa , Elad Mentovich , Matan Galanty
摘要： A vertical-cavity surface-emitting laser (VCSEL) and method of fabrication thereof is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector stack, a second reflector stack, and an active region disposed between the first and second reflector stacks. The active region is configured to cause the VCSEL to emit light having a characteristic wavelength of 910 nanometers. The active region includes alternating layers of quantum wells and barriers, the quantum wells having high indium content (up to 18%). The VCSEL features a first contact layer disposed at least partially on a surface of the mesa structure and configured to serve as an electrical signal layer and a second contact layer disposed at least partially about the mesa structure and configured to serve as an electrical ground.
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公开(公告)号：US11869566B2
公开(公告)日：2024-01-09
申请号：US17394515
申请日：2021-08-05
发明人： Elad Mentovich , Itshak Kalifa
IPC分类号： G11C11/40 , G11C11/404 , G11C11/4096 , H10K10/46 , H10K85/20
CPC分类号： G11C11/404 , G11C11/4096 , H10K10/484 , H10K10/491 , H10K85/211
摘要： A memory device includes a memory cell and a controller. The memory cell includes: (a) an array of molecule chains, at least one molecule chain includes: (i) first and second binding sites positioned at first and second ends of the molecule chain, respectively, and (ii) a chain of one or more fullerene derivatives, chemically connecting between the first and second binding sites, (b) source and drain electrodes, electrically connected to the first and second binding sites, respectively, and configured to apply to the array a source-drain voltage (VSD) along a first axis, and (c) a gate electrode, configured to apply to the array a gate voltage (VG) along a second different axis. The controller is configured to perform a data storage operation in the memory cell by (i) applying to the gate electrode a signal for producing the VG, and (ii) applying the VSD between the source and drain electrodes.
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公开(公告)号：US20220246781A1
公开(公告)日：2022-08-04
申请号：US17249140
申请日：2021-02-22
发明人： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich , Matan Galanty , Itshak Kalifa , Paraskevas Bakopoulos
IPC分类号： H01L31/105 , H01L31/0304
摘要： Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.
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公开(公告)号：US11378765B2
公开(公告)日：2022-07-05
申请号：US16928045
申请日：2020-07-14
发明人： Donald Becker , Dimitrios Kalavrouziotis , Boaz Atias , Itshak Kalifa , Tamir Sharkaz , Elad Mentovich
摘要： A universal multi-core fiber (UMCF) interconnect includes multiple optical fiber cores and a shared cladding. Each of the optical fiber cores is configured to convey first optical communication signals having a first carrier wavelength using multi-mode propagation, and to convey second optical communication signals having a second carrier wavelength using single-mode propagation. The shared cladding encloses the multiple optical fiber cores.
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5.发明授权公开(公告)号：US10996401B2
公开(公告)日：2021-05-04
申请号：US16313503
申请日：2016-06-30
发明人： Elad Mentovich , Itshak Kalifa , Sylvie Rockman , Anna Sandomirsky , Giannis Poulopoulos , Dimitrios Kalavrouziotis , Paraskevas Bakopoulos , Hercules Avramopoulos , Xin Yin , Geert Van Steenberge
摘要： An optical coupler and method of assembly are described that provide efficient coupling from the photonic integrated circuit (PIC) waveguide layer to external components, such as optical fibers, VCSELs, photodetectors, and gain blocks, among others. The optical coupler includes a PIC that can be supported by a printed circuit board, an optoelectronic transducer supported by the PIC that can convert between optical signals and corresponding electrical signals, and a coupled waveguide assembly. The coupled waveguide assembly includes a low-index waveguide, a high-index waveguide, and a reflective surface that changes a pathway of the optical signals to direct the optical signals from the optoelectronic transducer into the low-index waveguide or from the low-index waveguide into the optoelectronic transducer.
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公开(公告)号：US20180375287A1
公开(公告)日：2018-12-27
申请号：US16015533
申请日：2018-06-22
发明人： Itshak Kalifa , Elad Mentovich , Sylvie Rockman
摘要： A layout for a vertical-cavity surface-emitting laser (VCSEL) is provided. In an example embodiment, the layout comprises a VCSEL, an etched shape around a mesa of the VCSEL, a signal contact layer deposited on section of the mesa, and a ground contact layer. The ground contact layer comprises three parts and is positioned around a first section of the etched shape. The first part of the ground contact layer is deposited on a second section of the etched shape. The second and third parts of the ground contact layer comprise two legs off of the first part. The two legs are symmetrically positioned about two sides of the signal contact layer to form a ground-signal-ground configuration.
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7.发明授权公开(公告)号：US10073227B1
公开(公告)日：2018-09-11
申请号：US15614036
申请日：2017-06-05
发明人： Elad Mentovich , Itshak Kalifa
CPC分类号： G02B6/4227 , G02B6/4214 , G02B6/4221 , G02B6/4224 , G02B6/4228
摘要： Systems and methods are described for characterizing the location of optical components relative to one another for optimizing the performance of the optical module. In particular, a mechanism is provided for a user to visually determine, from a fiber point of view, the alignment and relative positioning of a lens assembly of the optical module with an optoelectronic transceiver, such as a VCSEL or a photodiode. By characterizing a location of the lens assembly with respect to the optoelectronic transceiver in an x-y plane and/or determining a spacing of the components in a z-direction, the user can compensate for expected signal losses through the optical module due to inaccuracies in the relative positioning of the components, adjust the relative positioning of the components in the optical module being examined, or modify manufacturing parameters to improve the accuracy of positioning in the modules and PCBAs yet to be built.
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公开(公告)号：US12034841B2
公开(公告)日：2024-07-09
申请号：US18135954
申请日：2023-04-18
发明人： Elad Mentovich , Itshak Kalifa , Ioannis (Giannis) Patronas , Paraskevas Bakopoulos , Eyal Waldman
CPC分类号： H04L9/0858 , H04B10/70
摘要： Embodiments are disclosed for a quantum key distribution enabled intra-datacenter network. An example system includes a first vertical cavity surface emitting laser (VCSEL), a second VCSEL and a network interface controller. The first VCSEL is configured to emit a first optical signal associated with data. The second VCSEL is configured to emit a second optical signal associated with quantum key distribution (QKD). Furthermore, the network interface controller is configured to manage transmission of the first optical signal associated with the first VCSEL and the second optical signal associated with the second VCSEL via an optical communication channel coupled to a network interface module.
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公开(公告)号：US11721952B2
公开(公告)日：2023-08-08
申请号：US16828764
申请日：2020-03-24
发明人： Itshak Kalifa , Elad Mentovich , Vladimir Iakovlev , Yuri Berk , Tamir Sharkaz
CPC分类号： H01S5/18322 , H01S5/021 , H01S5/0217 , H01S5/0218 , H01S5/02461 , H01S5/1838 , H01S5/18311 , H01S5/18358 , H01S5/18363 , H01S5/3095 , H01S5/34306 , H01S5/34353 , H01S5/04257
摘要： A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.
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公开(公告)号：US20230041969A1
公开(公告)日：2023-02-09
申请号：US17394515
申请日：2021-08-05
发明人： Elad Mentovich , Itshak Kalifa
IPC分类号： G11C11/404 , H01L51/00 , H01L51/05 , G11C11/4096
摘要： A memory device includes a memory cell and a controller. The memory cell includes: (a) an array of molecule chains, at least one molecule chain includes: (i) first and second binding sites positioned at first and second ends of the molecule chain, respectively, and (ii) a chain of one or more fullerene derivatives, chemically connecting between the first and second binding sites, (b) source and drain electrodes, electrically connected to the first and second binding sites, respectively, and configured to apply to the array a source-drain voltage (VSD) along a first axis, and (c) a gate electrode, configured to apply to the array a gate voltage (VG) along a second different axis. The controller is configured to perform a data storage operation in the memory cell by (i) applying to the gate electrode a signal for producing the VG, and (ii) applying the VSD between the source and drain electrodes.
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