Substrate treatment apparatus and substrate treatment method
    21.
    发明授权
    Substrate treatment apparatus and substrate treatment method 有权
    基板处理装置及基板处理方法

    公开(公告)号:US07968468B2

    公开(公告)日:2011-06-28

    申请号:US11562909

    申请日:2006-11-22

    摘要: In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.

    摘要翻译: 在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中,将涂布液供给到旋转基板上,形成涂膜 加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。 接下来,将蚀刻溶液供给到旋转基板上以蚀刻涂膜,然后将该涂布液供给到基板,在基板的前表面形成平坦的涂膜。 此后,加热基板以固化涂膜。 这样使涂膜均匀,高精度地平坦化,而不经历诸如化学机械抛光的高负载过程。

    BATTERY PRODUCTION METHOD
    22.
    发明申请
    BATTERY PRODUCTION METHOD 有权
    电池生产方法

    公开(公告)号:US20100287763A1

    公开(公告)日:2010-11-18

    申请号:US12812118

    申请日:2008-12-17

    IPC分类号: H01M2/00

    CPC分类号: H01M2/22 H01M2/30

    摘要: A method for producing a battery comprises a deformation step for moving a first metal foil (11) forming a pair of perpendicularly intersecting portions (44d, 44e) of a first metal, respectively, toward the outside in a second radial direction while enlarging the inside diameter, in the second radial direction (Y), of a first metal winding part (44) by making a force act on the pair of perpendicularly intersecting portions (44d, 44e) of a first metal toward the outside in the second radial direction, and a resistance welding step for pressing a pair of first metal welding portions (44b, 44c) toward the inside in a first radical direction under a state where the first terminal welding part (53) of a first current collecting terminal member (50) is arranged on the radial by inside of the first metal winding part (44) after the first metal winding part (44) is deformed, and then resistance welding the first metal welding portions (44b, 44c) to the first terminal welding part (53) under a state where the pair of first metal welding portions (44b, 44c) are brought into pressure contact with the first terminal welding part (53).

    摘要翻译: 一种电池的制造方法,其特征在于,具有使第一金属制的第一金属箔(11)分别在第二径向朝向外侧移动的第一金属箔(11)的变形步骤,同时扩大内部 通过使第一金属的一对垂直相交部分(44d,44e)在第二径向方向上朝向外侧作用力,第一金属绕组部分(44)在第二径向方向(Y)上的直径, 以及电阻焊接步骤,用于在第一集电端子构件(50)的第一端子焊接部分(53)处于第一集束端子构件(50)的状态下在一个第一自由度方向上朝向内侧压入一对第一金属焊接部分(44b,44c) 在第一金属卷绕部分(44)变形之后,在第一金属卷绕部分(44)的内部沿径向布置,然后将第一金属焊接部分(44b,44c)电阻焊接到第一端子焊接部分(53) 下一个 所述一对第一金属焊接部(44b,44c)与所述第一端子焊接部(53)压力接触的状态。

    SUBSTRATE TREATMENT APPARATUS
    23.
    发明申请
    SUBSTRATE TREATMENT APPARATUS 有权
    基板处理设备

    公开(公告)号:US20090025637A1

    公开(公告)日:2009-01-29

    申请号:US12177243

    申请日:2008-07-22

    IPC分类号: B05C13/00

    摘要: A substrate treatment apparatus of the present invention includes: a holding means for rotatably holding a substrate to be treated; a coating solution supply nozzle for supplying a coating solution onto the front surface of the substrate to be treated held on the holding means; a treatment container with an upper surface open for housing them; an exhaust means for exhausting an atmosphere in the treatment container from the bottom; a multiblade centrifugal fan provided on the inner periphery of the treatment container for flowing airflow on a front surface side of the substrate to the exhaust means; and a controller for controlling the number of rotations of the multiblade centrifugal fan corresponding to the number of rotations of the substrate, wherein the number of rotations of the multiblade centrifugal fan is controlled so that turbulent airflow flowing in a circumferential direction on the front surface of the substrate generated due to the rotation of the substrate is corrected to laminar airflow flowing in a radial direction.

    摘要翻译: 本发明的基板处理装置包括:用于可旋转地保持待处理基板的保持装置; 涂布溶液供给喷嘴,用于将涂布溶液供给到保持在保持装置上的被处理基板的前表面上; 处理容器,其上表面打开以容纳它们; 用于从底部排出处理容器中的气氛的排气装置; 设置在处理容器的内周上的多叶离心风扇,用于将衬底的前表面侧的气流流向排气装置; 以及控制器,用于控制与所述基板的旋转数相对应的所述多叶离心风扇的转数,其中所述多叶离心风扇的转数受到控制,使得在圆周方向上流动的湍流气流在 由于基板的旋转而产生的基板被校正成沿径向流动的层流。

    SUBSTRATE PROCESSING METHOD AND PROGRAM
    25.
    发明申请
    SUBSTRATE PROCESSING METHOD AND PROGRAM 有权
    基板处理方法和程序

    公开(公告)号:US20070150112A1

    公开(公告)日:2007-06-28

    申请号:US11611632

    申请日:2006-12-15

    IPC分类号: B05D5/12 G05B21/00 G06F19/00

    CPC分类号: H01L21/6715 H01L21/67219

    摘要: In the present invention, an insulating material is applied onto a substrate in a coating treatment unit to form a coating insulating film. The substrate is heated in the heating processing unit, whereby the coating insulating film is hardened partway. A brush is then pressed against the front surface of the coating insulating film in a planarization unit and moved along the front surface of the coating insulating film, thereby planarizing the coating insulating film. The substrate is then heated to completely harden the coating insulating film. According to the present invention, the coating film can be planarized without using the CMP technology.

    摘要翻译: 在本发明中,在涂布处理单元中的基板上涂布绝缘材料,形成涂布绝缘膜。 基板在加热处理单元中被加热,由此涂覆绝缘膜在中途硬化。 然后在平面化单元中将刷子压在涂覆绝缘膜的前表面上,并沿着涂层绝缘膜的前表面移动,从而使涂层绝缘膜平坦化。 然后将基板加热以完全硬化涂层绝缘膜。 根据本发明,可以在不使用CMP技术的情况下平坦化涂膜。

    Method for forming thin film and film-forming device
    26.
    发明申请
    Method for forming thin film and film-forming device 失效
    薄膜和成膜装置的形成方法

    公开(公告)号:US20070098901A1

    公开(公告)日:2007-05-03

    申请号:US11585860

    申请日:2006-10-25

    IPC分类号: B05D3/04 B05C11/02 B05C11/00

    摘要: It is an object to provide a method for forming a thin film which can be uniformly and precisely planarized without a high-loaded process as in a chemical mechanical polishing method and to provide a device used for the method. In a method for forming a thin film on a surface of a-semiconductor wafer as a substrate to be processed by supplying a coating solution to the wafer having asperities on the surface thereof, a thin film of a coating solution is planarized by placing the wafer having the thin film formed on the surface thereof in a solvent gas atmosphere generated in a treatment chamber, then spraying a solvent gas toward the surface of the wafer from a solvent-gas-supplying nozzle and, simultaneously, relatively moving the wafer and/or the solvent-gas-supplying nozzle in directions parallel to each other.

    摘要翻译: 本发明的目的是提供一种形成薄膜的方法,其可以在化学机械抛光方法中没有高负载工艺的情况下均匀且精确地平坦化,并提供用于该方法的装置。 在通过向其表面具有凹凸的晶片供给涂布液的半导体晶片的表面上形成作为待加工基板的薄膜的方法中,通过将晶片的薄膜放置 在处理室中产生的溶剂气体气氛中在其表面上形成薄膜,然后从溶剂气体供给喷嘴向晶片的表面喷射溶剂气体,同时相对移动晶片和/或 溶剂气体供给喷嘴在彼此平行的方向上。

    Disazo pigments having improved heat resistance using lower alkyl and
phenyl esters of acetoacetanilide
    27.
    发明授权
    Disazo pigments having improved heat resistance using lower alkyl and phenyl esters of acetoacetanilide 失效
    使用乙酰乙酰苯胺的低级烷基和苯基酯改善耐热性的双偶氮颜料

    公开(公告)号:US4780533A

    公开(公告)日:1988-10-25

    申请号:US12377

    申请日:1987-02-09

    CPC分类号: C09B35/105

    摘要: A disazo pigment is prepared by coupling the tetrazo compound of 3,3'-dichlorobenzidine with an acetoacetanilide compound which is other than those represented by the below-described general formula (I) and is free of water-soluble groups. In the present invention, about 0.5-50 mole % of the acetoacetanilide compound is replaced by a compound represented by the following general formula (I): ##STR1## wherein R means a methyl, ethyl, propyl or butyl group or a substituted or unsubstituted phenyl group.

    摘要翻译: 通过将3,3'-二氯联苯胺的双偶氮化合物与不同于下述通式(I)所示的那些的乙酰乙酰替苯胺化合物偶联,并且不含水溶性基团来制备双偶氮颜料。 在本发明中,约0.5-50摩尔%的乙酰乙酰替苯胺化合物被下列通式(I)表示的化合物代替:其中R表示甲基,乙基,丙基或丁基或 取代或未取代的苯基。