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公开(公告)号：US06872513B2
公开(公告)日：2005-03-29
申请号：US10304989
申请日：2002-11-26
申请人： Robert P. Meagley
发明人： Robert P. Meagley
CPC分类号： G03F7/40 , G03F7/2026
摘要： The sloped edges of patterned photoresist material are made more vertical by treating the exposed and developed photoresist pattern to an edge correction process. A layer of acid-based material is deposited on the photoresist pattern. The layer is then exposed to acid-neutralizing light to create a top-to-bottom gradient of acidity. The structure is then exposed to heat to cause the acid to diffuse into the edge of the photoresist in amounts roughly proportional to the gradient. A subsequent development process removes the acid-based layer and also reshapes the photoresist edge in proportion to the acid diffusion, leaving a more vertical edge.
摘要翻译： 图案化光致抗蚀剂材料的倾斜边缘通过将曝光和显影的光致抗蚀剂图案处理成边缘校正处理而制成更垂直的。 一层酸基材料沉积在光刻胶图案上。 然后将该层暴露于酸中和光以产生从上至下的酸度梯度。 然后将结构暴露于热量以使酸以与梯度大致成比例的量扩散到光致抗蚀剂的边缘。 随后的显影过程除去酸基层，并且与酸扩散成比例地重塑光致抗蚀剂边缘，留下更垂直的边缘。
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公开(公告)号：US06858528B2
公开(公告)日：2005-02-22
申请号：US10393063
申请日：2003-03-20
IPC分类号： H01L21/31 , H01L21/311 , H01L21/469 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L29/02 , H01L47/00
CPC分类号： H01L21/76808
摘要： A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix with filler material mixed therein. The filler material may be particulate matter that may be used to modify one or more properties of the composite sacrificial material during semiconductor processing.
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公开(公告)号：US08003293B2
公开(公告)日：2011-08-23
申请号：US10956284
申请日：2004-09-30
CPC分类号： G03F7/0382 , G03F7/0392 , Y10S430/114 , Y10S430/115
摘要： A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.
摘要翻译： 光致酸产生剂，溶解度开关，可光成象物质和猝灭剂的故意设计的放置和尺寸约束（分子量分布）在光致抗蚀剂内形成各个像素。 在照射时，在被照射以对光致抗蚀剂进行图案化的各个像素内发生独立的反应。 这些像素可以具有各种形式，包括由几个聚合物链形成的聚合物链，大体积聚集体，胶束或胶束。 此外，这些像素可以被设计为自组装到其上施加光致抗蚀剂的基板上。
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公开(公告)号：US07718528B2
公开(公告)日：2010-05-18
申请号：US11620516
申请日：2007-01-05
IPC分类号： H01L21/302
CPC分类号： G03F7/091 , G03F7/0045
摘要： A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.
摘要翻译： 有助于减少半导体工艺效应的半导体工艺技术，例如不期望的线边缘粗糙度，光刻分辨率不足以及与去除光致抗蚀剂层相关的有限的焦深问题。 更具体地，本发明的实施例使用光致酸产生剂（PAG）材料结合牺牲光吸收材料（SLAM）来帮助减少在半导体制造过程中与去除光致抗蚀剂有关的这些和其它不期望的影响。 此外，本发明的实施例允许PAG以有效的方式应用于半导体制造过程中，与典型的现有技术相比需要较少的处理操作。
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公开(公告)号：US07572732B2
公开(公告)日：2009-08-11
申请号：US11417615
申请日：2006-05-03
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/31144 , H01L21/76802
摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.
摘要翻译： 描述了几种用于通过改变其组成以使其与周围电介质的蚀刻速率相匹配来调节牺牲光吸收材料（SLAM）的蚀刻速率的技术。 这在双镶嵌工艺中特别有用，其中SLAM填充通孔开口并与周围的电介质材料一起蚀刻以形成覆盖通孔开口的沟槽。
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公开(公告)号：US07560165B2
公开(公告)日：2009-07-14
申请号：US11147909
申请日：2005-06-07
CPC分类号： B32B3/26 , B32B2310/12 , B32B2457/00 , H01L21/76814 , Y10T428/249953 , Y10T428/249978 , Y10T428/249993 , Y10T428/31663
摘要： Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may besealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.
摘要翻译： 公开了用于最小化与邻近多孔电介质材料的微电子器件处理有关的缺点的方法和结构。 特别地，公开了化学方案，其中多孔介电材料可以通过将偶联剂附着到孔的表面而进行加压。 偶联剂可以在电介质表面中的反应性基团上形成全部或部分盖，或者可以交联以密封电介质中的孔。
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27.发明申请公开(公告)号：US20080160446A1
公开(公告)日：2008-07-03
申请号：US11648063
申请日：2006-12-28
申请人： Robert P. Meagley
发明人： Robert P. Meagley
IPC分类号： G03C1/00
CPC分类号： G03F7/0382 , G03F7/0392
摘要： Photoresist compositions including amino acid polymers as photoimageable species are disclosed. Methods of using the compositions in photolithography are also disclosed.
摘要翻译： 公开了包含作为可光成像物质的氨基酸聚合物的光致抗蚀剂组合物。 还公开了在光刻中使用组合物的方法。
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公开(公告)号：US07344972B2
公开(公告)日：2008-03-18
申请号：US10829592
申请日：2004-04-21
IPC分类号： H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76808 , H01L21/76825 , H01L21/76831
摘要： The invention provides a layer of photosensitive material that may be directly patterned. The photosensitive material may then be decomposed to leave voids or air gaps in the layer. This may provide a low dielectric constant layer with reduced resistance capacitance delay characteristics.
摘要翻译： 本发明提供可以直接图案化的感光材料层。 然后可以将感光材料分解以留下该层中的空隙或气隙。 这可以提供具有降低的电阻电容延迟特性的低介电常数层。
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公开(公告)号：US07018920B2
公开(公告)日：2006-03-28
申请号：US10985510
申请日：2004-11-10
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808
摘要： A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix with filler material mixed therein. The filler material may be particulate matter that may be used to modify one or more properties of the composite sacrificial material during semiconductor processing.
摘要翻译： 复合牺牲材料沉积在半导体衬底上的电介质层的空隙或开口中。 复合牺牲材料包括其中混合有填料的聚合物或低聚物基质。 填充材料可以是可以用于在半导体加工期间修饰复合牺牲材料的一种或多种性质的颗粒物质。
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公开(公告)号：US06991893B2
公开(公告)日：2006-01-31
申请号：US10284662
申请日：2002-10-31
IPC分类号： G03F7/00
摘要： Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.
摘要翻译： 光致抗蚀剂可以形成在经过改性以便使较低层光致抗蚀剂中毒的结构上。 然后，当光致抗蚀剂被图案化时，其仅被图案化到中毒层。 中毒层可能随后被去除。 然而，由于使用了改性方法，在一些实施方案中可以改善光致抗蚀剂的临界尺寸。
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