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    Layered films formed by controlled phase segregation
    6.
    发明授权
    Layered films formed by controlled phase segregation 有权
    通过控制相分离形成的层状膜

    公开(公告)号：US07241707B2

    公开(公告)日：2007-07-10

    申请号：US11060843

    申请日：2005-02-17

    申请人： Robert P. Meagley ,  Michael J. Leeson ,  Michael D. Goodner ,  Bob E. Leet ,  Michael L. McSwiney ,  Shan C. Clark

    发明人： Robert P. Meagley ,  Michael J. Leeson ,  Michael D. Goodner ,  Bob E. Leet ,  Michael L. McSwiney ,  Shan C. Clark

    IPC分类号： H01L21/469

    CPC分类号： H01L21/76808 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/76822 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835

    摘要： Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.

    摘要翻译： 集成电路处理中的多层膜可以通过在半导体衬底上形成的单一组合物的相分离来形成。 然后将组合物诱导相分离成至少第一连续相和第二连续相。 组合物可以由相分离成不同连续层的两种或更多种组分形成。 组合物还可以是单一组分，其在活化时分解成两个或多个相分离成不同连续层的组分。 相分离可以用于形成例如牺牲光吸收材料（SLAM）和显影剂抗性皮肤，电介质层和硬掩模，光致抗蚀剂和抗反射涂层（ARC），应力缓冲涂层和 衬底封装上的保护层，以及光干涉层。

    Energy harvesting molecules and photoresist technology
    7.
    发明授权
    Energy harvesting molecules and photoresist technology 失效
    能量收集分子和光刻胶技术

    公开(公告)号：US07235344B2

    公开(公告)日：2007-06-26

    申请号：US10881475

    申请日：2004-06-30

    申请人： Robert P. Meagley ,  Michael D. Goodner ,  Robert E. Leet ,  Michael L. McSwiney

    发明人： Robert P. Meagley ,  Michael D. Goodner ,  Robert E. Leet ,  Michael L. McSwiney

    IPC分类号： G03C1/73 ,  G03C1/74 ,  G03F7/09 ,  G03F7/20 ,  G03F7/30

    CPC分类号： G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： A composition including a first moiety; and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that energy harvested at the second moiety may be transferred to the first moiety. An article of manufacture including a film including a first moiety and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that collectively the first and second moieties have an electron capture cross-section greater than the electron capture cross-section of the first moiety alone. A method including forming a film on a substrate including a first moiety and a different second moiety; exposing the film to photonic or charged particle radiation; and patterning the film.

    摘要翻译： 包含第一部分的组合物; 以及能够从外部源收获能量的不同的第二部分，其中第二部分被定位成使得在第二部分收获的能量可以转移到第一部分。 包括包括第一部分和能够从外部源收集能量的不同第二部分的膜的制品，其中所述第二部分被定位成使得所述第一部分和所述第二部分的电子捕获截面大于所述电子 仅捕获第一部分的横截面。 一种方法，包括在包括第一部分和不同的第二部分的基底上形成膜; 将膜暴露于光子或带电粒子辐射; 并构图。

    Method to modulate etch rate in SLAM
    8.
    发明授权
    Method to modulate etch rate in SLAM 失效
    在SLAM中调制蚀刻速率的方法

    公开(公告)号：US07101798B2

    公开(公告)日：2006-09-05

    申请号：US10715956

    申请日：2003-11-17

    申请人： Michael D. Goodner ,  Robert P. Meagley ,  Kevin P. O'Brien

    发明人： Michael D. Goodner ,  Robert P. Meagley ,  Kevin P. O'Brien

    IPC分类号： H01L21/302

    CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76802

    摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

    摘要翻译： 描述了几种用于通过改变其组成以使其与周围电介质的蚀刻速率相匹配来调节牺牲光吸收材料（SLAM）的蚀刻速率的技术。 这在双镶嵌工艺中特别有用，其中SLAM填充通孔开口并与周围的电介质材料一起蚀刻以形成覆盖通孔开口的沟槽。

    Precursors for film formation
    9.
    发明授权
    Precursors for film formation 失效
    成膜前体

    公开(公告)号：US07071125B2

    公开(公告)日：2006-07-04

    申请号：US10947820

    申请日：2004-09-22

    申请人： Michael L. McSwiney ,  Huey-Chiang Liou ,  Michael D. Goodner ,  Robert E. Leet ,  Robert P. Meagley

    发明人： Michael L. McSwiney ,  Huey-Chiang Liou ,  Michael D. Goodner ,  Robert E. Leet ,  Robert P. Meagley

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02222 ,  C23C16/22 ,  H01L21/02123 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/3125 ,  H01L21/3185

    摘要： A method including introducing a precursor in the presence of a circuit substrate, and forming a film including a reaction product of the precursor on the substrate, wherein the precursor includes a molecule comprising a primary species of the film and a modifier. A method including introducing a precursor in the presence of a circuit substrate, the precursor including a primary species and a film modifier as a single source, and forming a film on the circuit substrate. An apparatus including a semiconductor substrate, and a film on a surface of the semiconductor substrate, the film including a reaction product of a precursor including a molecule comprising a primary species and a modifier.

    摘要翻译： 一种方法，包括在存在电路基板的情况下引入前体，以及形成包含所述前体在所述基底上的反应产物的膜，其中所述前体包括包含所述膜的主要种类和改性剂的分子。 一种方法，包括在存在电路基板的情况下引入前体，所述前体包括作为单一源的主要物质和膜改性剂，以及在所述电路基底上形成膜。 一种包括半导体衬底和半导体衬底的表面上的膜的设备，所述膜包括包含主要物质和改性剂的分子的前体的反应产物。