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公开(公告)号：US07569484B2
公开(公告)日：2009-08-04
申请号：US11503762
申请日：2006-08-14
IPC分类号： H01L21/4763
CPC分类号： H01L21/31116 , C23C16/0245 , C23C16/042 , C23C16/26 , C23C16/517 , H01J37/28 , H01J37/3178 , H01J37/3233 , H01J2237/2605 , H01J2237/3137 , H01J2237/3151 , H01J2237/31732 , H01J2237/3174 , H01L27/1052 , Y10S438/905 , Y10S438/909
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
摘要翻译： 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。
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22.发明授权公开(公告)号：US08821682B2
公开(公告)日：2014-09-02
申请号：US12896549
申请日：2010-10-01
CPC分类号： H01L21/76892 , H01J2237/30466 , H01J2237/31732 , H01J2237/3174 , H01L21/02079 , H01L21/31116 , H01L21/31604 , H01L21/32136
摘要： Systems and methods of imaging and repairing defects on and below the surface of an integrated circuit (IC) are described. The method may be used in areas as small as one micron in diameter, and may remove the topmost material in the small spot, repeating with various layers, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. After the defect location is exposed, the method uses the energetic beam to etch undesired materials, and deposit various appropriate materials to fill gaps, and restore the IC to an operational condition.
摘要翻译： 描述了在集成电路（IC）的表面上和下方成像和修复缺陷的系统和方法。 该方法可以用于直径小至一微米的区域，并且可以去除小点中的最上面的材料，以各种层重复，直到获得所需的深度。 诸如电子束的能量束被引导到选定的表面位置。 该表面具有固体，流体或气态反应性材料（例如碳氟化合物的定向流）的添加层，并且能量束将光束区域中的反应性材料分解成化学侵蚀表面的自由基。 在暴露缺陷位置之后，该方法使用能量束来蚀刻不需要的材料，并且沉积各种适当的材料以填充间隙，并将IC恢复到操作状态。
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公开(公告)号：US20110056625A1
公开(公告)日：2011-03-10
申请号：US12945135
申请日：2010-11-12
IPC分类号： C23F1/08 , H01L21/306 , C23C16/00
CPC分类号： H01L21/31116
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
摘要翻译： 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，反应物质由含卤素和碳的气体源产生。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。
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公开(公告)号：US07892978B2
公开(公告)日：2011-02-22
申请号：US11483878
申请日：2006-07-10
IPC分类号： H01L21/302
CPC分类号： H01L22/14 , G01R31/2898 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J2237/24564 , H01J2237/24592
摘要： A method of imaging and identifying materials, contamination, fabrication errors, and defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas smaller than one micron in diameter, and may remove IC layers, either selectively or non-selectively, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected IC location. The IC has a layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, formed over the surface of the IC. The energetic beam disassociates the reactive material in or on the region into chemical radicals that chemically attack the surface. The surface may be examined as various layers are selectively removed in the controlled area spot etch, and SEM imaging may then be used to diagnose problems.
摘要翻译： 描述了在集成电路（IC）的表面上和下方成像和识别材料，污染，制造误差和缺陷的方法。 该方法可以用于直径小于一微米的区域，并且可以选择性地或非选择性地去除IC层，直到获得所需的深度。 诸如电子束的能量束被引导到选定的IC位置。 IC具有形成在IC的表面上的固体，流体或气态反应性材料层，例如碳氟化合物的定向流。 能量束将区域中或其上的反应物质分解成化学侵蚀表面的化学自由基。 可以检查表面，因为在受控区域点蚀刻中选择性地去除各种层，然后可以使用SEM成像来诊断问题。
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25.发明授权公开(公告)号：US07718080B2
公开(公告)日：2010-05-18
申请号：US11503690
申请日：2006-08-14
IPC分类号： H01L21/302 , B82B1/00
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/3127
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.
摘要翻译： 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。 在一个实例中，使用诸如碳纳米管阵列的电子束阵列在处理操作期间选择性地暴露表面。
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公开(公告)号：US20080038928A1
公开(公告)日：2008-02-14
申请号：US11503681
申请日：2006-08-14
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
摘要翻译： 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，反应物质由含卤素和碳的气体源产生。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。
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27.发明申请公开(公告)号：US20080038894A1
公开(公告)日：2008-02-14
申请号：US11503690
申请日：2006-08-14
IPC分类号： H01L21/336
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/3127
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.
摘要翻译： 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。 在一个实例中，使用诸如碳纳米管阵列的电子束阵列在处理操作期间选择性地暴露表面。
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公开(公告)号：US20070278180A1
公开(公告)日：2007-12-06
申请号：US11421711
申请日：2006-06-01
CPC分类号： G01N1/32
摘要： A method of imaging and identifying materials on and below the surface of a structure is described. The method may be used in areas as small as one micron in diameter, and may remove a thin portion of the topmost material, repeating the analysis, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. The reaction products from the radical attack on the surface are pumped away from the surface and analyzed using various methods, such as optical emission, infrared, atomic absorption, or Raman spectroscopy.
摘要翻译： 描述了一种在结构表面上和下方对材料进行成像和识别的方法。 该方法可以用于直径小至一微米的区域中，并且可以去除最上层材料的薄部分，重复分析，直到获得所需的深度。 诸如电子束的能量束被引导到选定的表面位置。 该表面具有固体，流体或气态反应性材料（例如碳氟化合物的定向流）的添加层，并且能量束将光束区域中的反应性材料分解成化学侵蚀表面的自由基。 从表面的自由基攻击产生的反应产物从表面抽出并用各种方法进行分析，如光发射，红外，原子吸收或拉曼光谱。
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29.发明授权Method of removing or deposting material on a surface including material selected to decorate a particle on the surface for imaging 有权在包括选择用于装饰表面上的颗粒以进行成像的材料的表面上去除或沉积材料的方法公开(公告)号：US08026501B2
公开(公告)日：2011-09-27
申请号：US12869538
申请日：2010-08-26
申请人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
发明人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
IPC分类号： G01N21/86
CPC分类号： G01N1/32
摘要： A method that may be applied to imaging and identifying defects and contamination on the surface of an integrated circuit is described. An energetic beam, such as an electron beam, may be directed at a selected IC location having a layer of a solid, fluid, or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
摘要翻译： 描述了可应用于成像和识别集成电路表面上的缺陷和污染的方法。 诸如电子束的能量束可以被引导到具有在表面上形成的固体，流体或气态反应性材料层的选定IC位置。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。
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30.发明申请公开(公告)号：US20110017401A1
公开(公告)日：2011-01-27
申请号：US12896549
申请日：2010-10-01
CPC分类号： H01L21/76892 , H01J2237/30466 , H01J2237/31732 , H01J2237/3174 , H01L21/02079 , H01L21/31116 , H01L21/31604 , H01L21/32136
摘要： Systems and methods of imaging and repairing defects on and below the surface of an integrated circuit (IC) are described. The method may be used in areas as small as one micron in diameter, and may remove the topmost material in the small spot, repeating with various layers, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. After the defect location is exposed, the method uses the energetic beam to etch undesired materials, and deposit various appropriate materials to fill gaps, and restore the IC to an operational condition.
摘要翻译： 描述了在集成电路（IC）的表面上和下方成像和修复缺陷的系统和方法。 该方法可以用于直径小至一微米的区域，并且可以去除小点中的最上面的材料，以各种层重复，直到获得所需的深度。 诸如电子束的能量束被引导到选定的表面位置。 该表面具有固体，流体或气态反应性材料（例如碳氟化合物的定向流）的添加层，并且能量束将光束区域中的反应性材料分解成化学侵蚀表面的自由基。 在暴露缺陷位置之后，该方法使用能量束来蚀刻不需要的材料，并且沉积各种适当的材料以填充间隙，并将IC恢复到操作状态。
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