摘要:
Magnetic sensors are fabricated with an initial length that is slightly longer than their finished length. The sensors are then critically lapped and exposed for target signal output. The final target length of the sensors is obtained by first exposing the sensors to a photolithographic process and then directly lapping the excess length from the sensors. The length of sensor material that is removed is in the range of several nanometers. The target end point during lapping may be ascertained by detecting the change in resistance between the sensor and leads in the lapping tool as the excess material is lapped from the sensor.
摘要:
An in-line lapping guide uses a contiguous resistor in a cavity to separate a lithographically-defined sensor from the in-line lapping guide. As lapping proceeds through the cavity toward the sensor, the resistance across the sensor leads increases to a specific target, thereby indicating proximity to the sensor itself. The contiguous resistor is fabricated electrically in parallel to the sensor and the in-line lapping guide. The total resistance across the sensor leads show resistance change even when lapping through the cavity portion. One method to produce the contiguous resistor is to partial mill the cavity between the sensor and the in-line lapping guide so that a film of metal is left. Total resistance across leads is the parallel resistance of the sensor, the contiguous resistor, and the in-line lapping guide.
摘要:
A method for making a magnetoresistive read head so that the pinned ferromagnetic layer is wider than the stripe height of the free ferromagnetic layer uses ion milling with the ion beam aligned at an angle to the substrate supporting the stack of layers making up the read head. The stack is patterned with photoresist to define a rectangular region with front and back long edges aligned parallel to the read head track width. After ion milling in two opposite directions orthogonal to the front and back long edges, the pinned layer width has an extension. The extension makes the width of the pinned layer greater than the stripe height of the free layer after the substrate and stack of layers are lapped. The length of the extension is determined by the angle between the substrate and the ion beam and the thickness of the photoresist.
摘要:
A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer, and forming a first layer of a carbon composition above the active area of the free layer. A layer of resist is formed above the first layer of carbon composition. A bias layer is formed above the tab areas of the free layer, the bias layer being operative to substantially pin magnetic moments of the tab areas of the free layer. Leads are formed above the bias layer. A second layer of carbon composition is formed above the tab areas of the free layer. Any material above a plane extending parallel to portions of the second layer of carbon composition above the tab areas are removed using chemical-mechanical polishing. Any remaining carbon composition is removed.
摘要:
A method for constructing a magnetoresistive sensor which eliminates all redeposited material (redep) from the sides of the sensor. The method involves forming a mask over a plurality of sensor layers, and then performing an ion mill at an angle that is nearly normal to the surface of the sensor layers. A second (glancing) ion mill is then performed at a larger angle with respect to the normal. The first ion mill may be 0-30 degrees with respect to normal, whereas the second ion mill can be 50-89 degrees with respect to normal. The first ion mill is performed with a larger bias voltage than the second ion mill. The higher bias voltage of the first ion mill provides a well collimated ion beam to form straight vertical side walls. The lower bias voltage of the second ion mill prevent damage to the sensor layers during the removal of redep from the sides of the sensor.
摘要:
According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.
摘要:
A radio-frequency oscillator incorporates a magnetoresistive device within which an electron current is able to flow. The device includes a stack including: a magnetic trapped layer, the magnetization of which is of substantially fixed direction; a magnetic free layer; and a non-magnetic intermediate layer-interposed between the free layer and the trapped layer. The oscillator also includes a mechanism capable of making an electron current flow in the layers constituting the stack and in a direction perpendicular to the plane which contains the layers. At least the free layer is devoid of any material at its center. The electron current density flowing through the stack is capable of generating a magnetization in the free layer in a micromagnetic configuration in the shape of a skewed vortex flowing in the free layer around the center of the free layer.
摘要:
The invention relates to a radiofrequency oscillator which incorporates: a spin-polarized electric current magnetoresistive device (6) for generating an oscillating signal at an oscillation frequency on an output terminal (10), and a terminal (18) for controlling the frequency or amplitude of the oscillating signal, and a feedback loop (44) comprising an amplifier (46) provided with: an input connected to the output terminal (10) of the magnetoresistive device (6) so as to amplify the portion of an oscillating signal detected at the output terminal, and an output connected to the control terminal (18) so as to inject onto said control terminal the amplified portion of the oscillating signal which is phase-related to the oscillating signal generated at the output terminal.
摘要:
The invention relates to a radio frequency oscillator which incorporates: a spin-polarized electric current magnetoresistive device (6), a terminal (18) for controlling the frequency or amplitude of the oscillating signal, a servo loop (34) connected between the output terminal and the control terminal for applying a control signal to the control terminal in order to slave a characteristic of the oscillating signal to a reference value, the servo loop (34) comprising: a sensor (36) of the amplitude of the oscillating signal oscillations, and a comparator (38) capable of generating the control signal according to the measured amplitude and the reference value.
摘要:
A radio-frequency oscillator incorporates a magnetoresistive device within which an electron current is able to flow. The device includes a stack including: a magnetic trapped layer, the magnetization of which is of substantially fixed direction; a magnetic free layer; and a non-magnetic intermediate layer-interposed between the free layer and the trapped layer. The oscillator also includes a mechanism capable of making an electron current flow in the layers constituting the stack and in a direction perpendicular to the plane which contains the layers. At least the free layer is devoid of any material at its center. The electron current density flowing through the stack is capable of generating a magnetization in the free layer in a micromagnetic configuration in the shape of a skewed vortex flowing in the free layer around the center of the free layer.