公开(公告)号：US20110147843A1

公开(公告)日：2011-06-23

申请号：US12968978

申请日：2010-12-15

申请人： Andrew Wood ,  Rudolf Zelsacher ,  Markus Zundel

发明人： Andrew Wood ,  Rudolf Zelsacher ,  Markus Zundel

IPC分类号： H01L29/78 ,  H01L21/30

CPC分类号： H01L29/7813 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66719 ,  H01L29/66734

摘要： A semiconductor component includes at least one field effect transistor disposed along a trench in a semiconductor region and has at least one locally delimited dopant region in the semiconductor region. The at least one locally delimited dopant region extends from or over a pn junction between the source region and the body region of the transistor or between the drain region and the body region of the transistor into the body region as far as the gate electrode, such that a gap between the pn junction and the gate electrode in the body region is bridged by the locally delimited dopant region.

摘要翻译： 半导体部件包括沿着半导体区域中的沟槽设置的至少一个场效应晶体管，并且在半导体区域中具有至少一个局部限定的掺杂区域。 至少一个局部限定的掺杂剂区域从源极区域和晶体管的体区域之间的pn结或者晶体管的漏极区域和体区域之间的pn结延伸到体区域中，直到栅电极延伸， 在体区域中的pn结和栅电极之间的间隙由局部限定的掺杂剂区域桥接。

公开(公告)号：US20110089528A1

公开(公告)日：2011-04-21

申请号：US12977351

申请日：2010-12-23

申请人： Markus Zundel ,  Norbert Krischke

发明人： Markus Zundel ,  Norbert Krischke

IPC分类号： H01L23/58

CPC分类号： H01L21/76243 ,  H01L29/42384 ,  H01L29/66787 ,  H01L29/78696

摘要： A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate.

摘要翻译： 公开了具有优化的绝缘结构的半导体，该绝缘结构简单且便宜并且可以制造成小于LOCOS绝缘结构。 在半导体衬底的表面上的注入掩模用于将元件注入到半导体衬底中，这些元件在热激活时与半导体衬底的其它元件一起形成绝缘区域。 热激活通过激光照射来实现，在此期间半导体衬底被短暂熔化，然后在随后的冷却期间再结晶，使得注入的元件与半导体衬底的其它元件一起形成绝缘区域。

公开(公告)号：US07790550B2

公开(公告)日：2010-09-07

申请号：US12186242

申请日：2008-08-05

申请人： Franz Hirler ,  Martin Poelzl ,  Markus Zundel ,  Rudolf Zelsacher

发明人： Franz Hirler ,  Martin Poelzl ,  Markus Zundel ,  Rudolf Zelsacher

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734

摘要： A trench transistor having a semiconductor body, in which a trench structure and an electrode structure embedded in the trench structure is disclosed. The electrode structure is electrically insulated from the semiconductor body by an insulation structure. The electrode structure has a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter. There is provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure.

摘要翻译： 公开了一种具有半导体本体的沟槽晶体管，其中沟槽结构和嵌入沟槽结构中的电极结构被公开。 电极结构通过绝缘结构与半导体本体电绝缘。 电极结构具有栅电极结构和场电极结构，其布置在栅电极结构的下方并与之电绝缘。 在栅电极结构和场电极结构之间设置有用于减小栅电极结构和场电极结构之间的电容耦合的屏蔽结构。

公开(公告)号：US07645690B2

公开(公告)日：2010-01-12

申请号：US11675376

申请日：2007-02-15

申请人： Markus Zundel ,  Hans-Joachim Schulze ,  Frank Hille

发明人： Markus Zundel ,  Hans-Joachim Schulze ,  Frank Hille

IPC分类号： H01L21/425

CPC分类号： H01L29/66727 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/1095 ,  H01L29/66734

摘要： An integrated circuit and method, producing semiconductor zones with a steep doping profile is disclosed. In one embodiment, dopants are implanted in a region corresponding to the semiconductor zone to be formed and which has at least one topology process. During the subsequent laser irradiation for activating the dopants in the semiconductor zone, regions which are laterally directly adjacent to the semiconductor zone are protected against melting on account of the topology process.

摘要翻译： 公开了一种制造具有陡峭掺杂分布的半导体区的集成电路和方法。 在一个实施例中，将掺杂剂注入到将要形成的半导体区域的区域中，并具有至少一个拓扑过程。 在用于激活半导体区域中的掺杂剂的随后的激光照射期间，横向直接邻近半导体区域的区域由于拓扑过程被保护而不熔化。

公开(公告)号：US20090206401A1

公开(公告)日：2009-08-20

申请号：US12186242

申请日：2008-08-05

申请人： Franz Hirler ,  Martin Poelzl ,  Markus Zundel ,  Rudolf Zelsacher

发明人： Franz Hirler ,  Martin Poelzl ,  Markus Zundel ,  Rudolf Zelsacher

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/7813 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734

摘要： A trench transistor having a semiconductor body, in which a trench structure and an electrode structure embedded in the trench structure is disclosed. The electrode structure is electrically insulated from the semiconductor body by an insulation structure. The electrode structure has a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter. There is provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure.

摘要翻译： 公开了一种具有半导体本体的沟槽晶体管，其中沟槽结构和嵌入沟槽结构中的电极结构被公开。 电极结构通过绝缘结构与半导体本体电绝缘。 电极结构具有栅电极结构和场电极结构，其布置在栅电极结构的下方并与之电绝缘。 在栅电极结构和场电极结构之间设置有用于减小栅电极结构和场电极结构之间的电容耦合的屏蔽结构。

公开(公告)号：US20090039419A1

公开(公告)日：2009-02-12

申请号：US12186034

申请日：2008-08-05

申请人： Markus Zundel ,  Franz Hirler

发明人： Markus Zundel ,  Franz Hirler

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/861

摘要： One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches.

摘要翻译： 一个实施例提供了包括具有第一侧和第二侧以及漂移区的半导体本体的半导体部件; 与所述漂移区域互补地并且在所述第一侧的方向上与所述漂移区域相邻地掺杂的第一半导体区域; 与所述漂移区相邻的所述漂移区与所述第二侧方向相同的导电类型的第二半导体区; 至少两个沟槽布置在半导体本体中并延伸到半导体本体中并且彼此间隔一定距离; 以及设置在与漂移区相邻的至少两个沟槽中的场电极。 所述至少两个沟槽在垂直方向上与所述第二半导体区域一定距离地布置，所述沟槽和所述第二半导体区域之间的距离大于所述沟槽之间的相互距离的1.5倍，并且所述漂移区域的掺杂浓度 在沟槽和第二半导体区域之间的区段中，在沟槽之间的截面中与最小掺杂浓度相差至多35％。

公开(公告)号：US20080214004A1

公开(公告)日：2008-09-04

申请号：US12039395

申请日：2008-02-28

申请人： Martin Poelzl ,  Walter Rieger ,  Markus Zundel

发明人： Martin Poelzl ,  Walter Rieger ,  Markus Zundel

IPC分类号： H01L21/02 ,  H01L29/86

CPC分类号： H01L21/76877 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

摘要： A method for manufacturing a semiconductor device and semiconductor device. One embodiment provides a semiconductor substrate with an active region and a margin region bordering on the active region. The spacer layer in the margin region is broken through at a selected location and at least part of the spacer layer is removed in the active region using a common process. The location is selected such that at least part of the semiconductor mesa structure is exposed and the spacer layer in the margin region is broken through to the conductive layer and not to the semiconductor substrate.

摘要翻译： 一种半导体器件和半导体器件的制造方法。 一个实施例提供了具有与有源区域接壤的有源区和边缘区的半导体衬底。 边缘区域中的间隔层在选定位置断裂，并且使用公共过程在有源区域中移除间隔层的至少一部分。 选择位置使得半导体台面结构的至少一部分被暴露，并且边缘区域中的间隔层被破坏到导电层而不是破坏到半导体衬底。

公开(公告)号：US20080116511A1

公开(公告)日：2008-05-22

申请号：US11600422

申请日：2006-11-16

申请人： Markus Zundel ,  Franz Hirler ,  Rudolf Zelsacher ,  Erwin Bacher

发明人： Markus Zundel ,  Franz Hirler ,  Rudolf Zelsacher ,  Erwin Bacher

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming trenches in a first side of a semiconductor material and forming a thick oxide layer on the trenches and on the first side. A part of the first side and the trenches is masked using a first mask, and the semiconductor material is doped by implantation through the thick oxide layer while the first mask is present. At least part of the thick oxide layer is removed while the first mask remains.

摘要翻译： 根据一个实施例，一种用于制造半导体器件的方法包括：在半导体材料的第一侧形成沟槽，并在沟槽和第一侧上形成厚的氧化物层。 使用第一掩模掩模第一侧面和沟槽的一部分，并且通过在第一掩模存在的情况下通过厚氧化物层的注入来掺杂半导体材料。 当第一掩模残留时，去除厚氧化物层的至少一部分。

公开(公告)号：US20060278922A1

公开(公告)日：2006-12-14

申请号：US11393092

申请日：2006-03-30

申请人： Markus Zundel

发明人： Markus Zundel

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0626 ,  H01L29/0878 ,  H01L29/42368

摘要： In order to obtain an increased avalanche strength, a trench transistor is proposed in which the breakdown location is defined in a trench bottom region below body contact zones. This is done by means of a modulation of the dopant concentration in a drift zone and an insulation layer thickness modulation in the bottom region of the trenches.

摘要翻译： 为了获得增加的雪崩强度，提出了一种沟槽晶体管，其中击穿位置被限定在主体接触区域下方的沟槽底部区域中。 这通过调制漂移区中的掺杂剂浓度和在沟槽的底部区域中的绝缘层厚度调制来完成。

公开(公告)号：US20050275013A1

公开(公告)日：2005-12-15

申请号：US11137942

申请日：2005-05-26

申请人： Rainald Sander ,  Markus Zundel

发明人： Rainald Sander ,  Markus Zundel

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L29/7813 ,  H01L27/0211 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/7803

摘要： A trench transistor is described. In one aspect, the trench transistor has a cell array having a plurality of cell array trenches and a plurality of mesa zones arranged between the cell array trenches, and a semiconductor functional element formed in one of the mesa zones. A current flow guiding structure is provided in the mesa zone in which the semiconductor functional element is formed, said structure being formed at least partly below the semiconductor functional element and being configured such that vertically oriented current flows out of the semiconductor functional element or into the semiconductor functional element are made more difficult and horizontally oriented current flows through the semiconductor functional element are promoted.

摘要翻译： 描述了沟槽晶体管。 在一个方面，沟槽晶体管具有具有多个单元阵列沟槽的单元阵列和布置在单元阵列沟槽之间的多个台面区，以及形成在台面区之一中的半导体功能元件。 电流引导结构设置在其中形成有半导体功能元件的台面区域中，所述结构至少部分地形成在半导体功能元件下方，并且被配置为使得垂直取向的电流流出半导体功能元件或者形成为 使半导体功能元件变得更加困难，并促进流过半导体功能元件的水平取向的电流。