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138 条记录 (耗时 0.031 秒)

    Current sense transistor with embedding of sense transistor cells
    1.
    发明授权
    Current sense transistor with embedding of sense transistor cells 有权
    具有感测晶体管单元的嵌入的电流检测晶体管

    公开(公告)号：US09076805B2

    公开(公告)日：2015-07-07

    申请号：US13549463

    申请日：2012-07-14

    申请人： Steffen Thiele ,  Andreas Meiser ,  Markus Zundel

    发明人： Steffen Thiele ,  Andreas Meiser ,  Markus Zundel

    IPC分类号： H01L29/78 ,  H01L23/58 ,  H01L29/417 ,  H03K17/082 ,  H01L27/12 ,  G01R19/00

    CPC分类号： H01L29/7815 ,  G01R19/0092 ,  H01L23/58 ,  H01L27/124 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/7813 ,  H01L2924/0002 ,  H03K17/0822 ,  H03K2217/0027 ,  H01L2924/00

    摘要： A semiconductor device a field of transistor cells integrated in a semiconductor body. A number of the transistor cells forming a power transistor and at least one of the transistor cells forming a sense transistor. A first source electrode is arranged on the semiconductor body electrically connected to the transistor cell(s) of the sense transistor but electrically isolated from the transistor cells of the power transistor. A second source electrode is arranged on the semiconductor body and covers the transistor cells of both the power transistor and the sense transistor, and at least partially covering the first source electrode in such a manner that the second source electrode is electrically connected only to the transistor cells of the power transistor but electrically isolated from the transistor cells of the sense transistor.

    摘要翻译： 一种半导体器件，集成在半导体本体中的晶体管单元的场。 形成功率晶体管的多个晶体管单元和形成感测晶体管的至少一个晶体管单元。 第一源电极布置在电连接到感测晶体管的晶体管单元的半导体本体上，但与功率晶体管的晶体管单元电隔离。 第二源电极布置在半导体本体上并覆盖功率晶体管和感测晶体管的晶体管单元，并且至少部分地覆盖第一源电极，使得第二源电极仅电连接到晶体管 功率晶体管的单元，但与感测晶体管的晶体管单元电隔离。

    System and method for manufacturing a temperature difference sensor
    7.
    发明授权
    System and method for manufacturing a temperature difference sensor 有权
    用于制造温差传感器的系统和方法

    公开(公告)号：US08766394B2

    公开(公告)日：2014-07-01

    申请号：US13426530

    申请日：2012-03-21

    申请人： Donald Dibra ,  Christoph Kadow ,  Markus Zundel

    发明人： Donald Dibra ,  Christoph Kadow ,  Markus Zundel

    IPC分类号： H01L31/058

    CPC分类号： H01L35/32 ,  G01K1/08 ,  G01K7/02

    摘要： An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.

    摘要翻译： 本发明的实施例涉及可以形成在半导体器件上的沟槽中的塞贝克温差传感器。 传感器的一部分可以被导电屏蔽件基本上包围。 可以包括多个结以提供更高的塞贝克传感器电压。 屏蔽可以电耦合到局部电位，或者电耦合到电浮置。 屏蔽的一部分可以形成为半导体器件形成的半导体衬底中的掺杂阱，或者形成为基本覆盖传感器的金属层。 屏蔽件可以形成为在传感器沟槽壁上的第一氧化物层，其中形成在第一氧化物层上的导电屏蔽层和形成在导电屏蔽上的第二氧化物层。 绝对温度传感器可以与塞贝克温差传感器串联耦合。

    Semiconductor Device Including Auxiliary Structure and Methods for Manufacturing A Semiconductor Device
    9.
    发明申请
    Semiconductor Device Including Auxiliary Structure and Methods for Manufacturing A Semiconductor Device 有权
    包括辅助结构的半导体器件和制造半导体器件的方法

    公开(公告)号：US20130240985A1

    公开(公告)日：2013-09-19

    申请号：US13420768

    申请日：2012-03-15

    申请人： Franz Hirler ,  Markus Zundel

    发明人： Franz Hirler ,  Markus Zundel

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7813 ,  H01L21/2255 ,  H01L21/2257 ,  H01L21/26586 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66734

    摘要： A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure including a first step and a second step along a lateral side of the trench region. The semiconductor device further includes an auxiliary structure of a first conductivity type between the first step and the second step, a gate electrode in the trench region and a body region of a second conductivity type other than the first conductivity type of the drift zone. The auxiliary structure adjoins each one of the drift zone, the body region and the dielectric structure.

    摘要翻译： 半导体器件包括从表面延伸到半导体本体的漂移区的沟槽区域。 半导体器件还包括电介质结构，其包括沿沟槽区域的横向侧的第一步骤和第二步骤。 半导体器件还包括在第一步骤和第二步骤之间的第一导电类型的辅助结构，沟槽区域中的栅极电极和除漂移区域的第一导电类型之外的第二导电类型的体区域。 辅助结构邻接漂移区，体区和电介质结构中的每一个。