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    Compound Semiconductor Single-Crystal Manufacturing Device and Manufacturing Method
    21.
    发明申请
    Compound Semiconductor Single-Crystal Manufacturing Device and Manufacturing Method 有权
    复合半导体单晶制造装置及制造方法

    公开(公告)号：US20100319614A1

    公开(公告)日：2010-12-23

    申请号：US12668426

    申请日：2009-03-06

    申请人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Hideaki Nakahata

    IPC分类号： C30B23/06 ,  C30B23/00

    CPC分类号： C30B23/066 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/0254

    摘要： A compound semiconductor single-crystal manufacturing device (1) is furnished with: a laser light source (6) making it possible to sublime a source material by directing a laser beam onto the material; a reaction vessel (2) having a laser entry window (5) through which the laser beam output from the laser light source (6) can be transmitted to introduce the beam into the vessel interior, and that is capable of retaining a starting substrate (3) where sublimed source material is recrystallized; and a heater (7) making it possible to heat the starting substrate (3). The laser beam is shone on, to heat and thereby sublime, the source material within the reaction vessel (2), and compound semiconductor single crystal is grown by recrystallizing the sublimed source material onto the starting substrate (3); afterwards the laser beam is employed to separate the compound semiconductor single crystal from the starting substrate (3).

    摘要翻译： 化合物半导体单晶制造装置（1）具有：激光光源（6），其可以通过将激光束引导到材料上来升高源材料; 具有激光入口窗口（5）的反应容器（2），从激光光源（6）输出的激光束可以通过激光入口窗口（5）传输，以将光束引入容器内部，并且能够保持起始衬底（ 3）升华源材料重结晶; 和加热器（7），使加热起始衬底（3）成为可能。 激光束照射在反应容器（2）内的源材料上，从而升华，通过将升华的源材料再结晶到起始衬底（3）上来生长化合物半导体单晶; 之后使用激光束将化合物半导体单晶与起始衬底（3）分离。

    Process for Producing Substrate of AlN Crystal, Method of Growing AlN Crystal, and Substrate of AlN Crystal
    22.
    发明申请
    Process for Producing Substrate of AlN Crystal, Method of Growing AlN Crystal, and Substrate of AlN Crystal 审中-公开
    制备AlN晶体基板的方法，生长AlN晶体的方法和AlN晶体的基板

    公开(公告)号：US20090280354A1

    公开(公告)日：2009-11-12

    申请号：US12306695

    申请日：2007-06-15

    申请人： Naho Mizuhara ,  Tomohiro Kawase ,  Michimasa Miyanaga

    发明人： Naho Mizuhara ,  Tomohiro Kawase ,  Michimasa Miyanaga

    IPC分类号： B05D5/12 ,  B32B9/00

    CPC分类号： C30B29/403 ,  C30B23/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02631

    摘要： Affords AlN crystal substrate manufacturing methods whereby large-scale, high-quality AlN crystal substrates can be manufactured; AlN crystal growth methods whereby bulk AlN of superior crystallinity can be grown; and AlN crystal substrates composed of the AlN crystal grown by the growth methods. AlN crystal substrate manufacturing method including: a step of growing an AlN crystal by sublimation onto a heterogeneous substrate to a thickness of, with respect to the heterogeneous-substrate diameter r, 0.4r or more; and a step of forming an AlN crystal substrate from a region of the AlN crystal not less than 200 μm away from the heterogeneous substrate. Also, AlN crystal growth technique of growing an AlN crystal by sublimation onto an AlN crystal substrate manufactured by the manufacturing method, and AlN crystal substrates composed of the AlN crystal grown by the growth technique.

    摘要翻译： 提供可以制造大规模，高质量的AlN晶体基板的AlN晶体基板制造方法; AlN晶体生长方法可以生长具有优异结晶度的块状AlN; 和由通过生长方法生长的AlN晶体组成的AlN晶体衬底。 AlN晶体基板的制造方法，其特征在于，包括以下步骤：将AlN晶体通过升华成非均相基板直径r的厚度为0.4r以上， 以及从不均匀衬底的不小于200μm的AlN晶体的区域形成AlN晶体衬底的步骤。 此外，通过升华将AlN晶体生长到通过制造方法制造的AlN晶体衬底上的AlN晶体生长技术和由通过生长技术生长的AlN晶体组成的AlN晶体衬底。

    Si3N4 sintered body with high thermal conductivity and method for producing the same
    24.
    发明授权
    Si3N4 sintered body with high thermal conductivity and method for producing the same 失效
    具有高导热性的Si 3 N 4烧结体及其制造方法

    公开(公告)号：US06617272B2

    公开(公告)日：2003-09-09

    申请号：US09819986

    申请日：2001-03-29

    申请人： Ai Itoh ,  Michimasa Miyanaga

    发明人： Ai Itoh ,  Michimasa Miyanaga

    IPC分类号： C04B35594

    CPC分类号： C04B35/591

    摘要： An Si3N4 sintered body produced by reactive sintering of silicon, wherein a compound of at least one element selected from the group consisting of Y, Yb and Sm is contained by 0.6 to 13% by weight as Ln2O3 (wherein Ln=Y, Yb or Sm), an oxygen content in Si3N4 crystal grains is not more than 1% by weight, a ratio of Si and Ln in the Si3N4 sintered body is within a range of 0.1 to 0.8 in a molar ratio of SiO2/Ln2O3 of the Si in terms of SiO2 to the oxide Ln2O3, and the sintered body has a relative density of 85 to 99.9%, a thermal conductivity of at least 70 W/m.K or more and a three-point bending strength of at least 600 MPa. The Si3N4 sintered body is produced by mixing 80 to 99% by weight of silicon powder and 1 to 20% by weight of powder of oxide of at least one element of Y, Yb and SM, by nitriding a molded body of the powder mixture in an atmosphere containing nitrogen at 1400° C. or less, and then sintering the nitrided body in an atmosphere containing nitrogen at a temperature of 1700 to 1950° C. In the production, a coupling agent including C, H, O and metal cations (e.g., Si or Ti) can be used as a reducing coating agent to further improve the thermal conductivity.

    摘要翻译： 通过硅的反应性烧结制备的Si 3 N 4烧结体，其中选自Y，Yb和Sm中的至少一种元素的化合物含有0.6〜13重量％的Ln 2 O 3（其中Ln = Y，Yb或Sm ）中，Si 3 N 4晶粒中的氧含量为1重量％以下，Si 3 N 4烧结体中的Si和Ln的比例在Si的SiO 2 / Ln 2 O 3的摩尔比为0.1〜0.8的范围内 的SiO 2与氧化物Ln 2 O 3的比例，烧结体的相对密度为85〜99.9％，导热率为70W / mK以上，三点弯曲强度为600MPa以上。 Si 3 N 4烧结体通过将80〜99重量％的硅粉末和1〜20重量％的Y，Yb和SM的至少一种元素的氧化物粉末混合，通过将粉末混合物的成型体氮化 在1400℃以下的氮气氛围下，在1700〜1950℃的温度下，在氮气氛中烧结氮化体。在制造中，使用C，H，O和金属阳离子（ 例如Si或Ti）可用作还原涂层剂以进一步提高热导率。

    Group III nitride single crystal and method of its growth
    26.
    发明授权
    Group III nitride single crystal and method of its growth 有权
    III族氮化物单晶及其生长方法

    公开(公告)号：US08377204B2

    公开(公告)日：2013-02-19

    申请号：US12305001

    申请日：2006-06-16

    申请人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

    发明人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

    IPC分类号： C30B23/00 ,  B32B5/16

    CPC分类号： C30B23/005 ,  C30B29/403 ,  C30B35/002 ,  Y10T428/2982

    摘要： Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal (3) inside a crystal-growth vessel (11), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (11). Employing the crystal-growth vessel (11) makes it possible to discharge from 1% to 50% of a source gas (4) inside the crystal-growth vessel (11) via the pores in the porous body to the outside of the crystal-growth vessel (11).

    摘要翻译： 提供具有良好重现性的具有良好结晶度的III族氮化物单晶的方法和通过生长方法获得的III族氮化物晶体。 一种方法是在晶体生长容器（11）的内部生长III族氮化物单晶（3），其特征在于，至少使用由孔隙率在0.1％至70％之间的金属碳化物形成的多孔体 晶体生长容器（11）的一部分。 采用晶体生长容器（11）使得可以通过多孔体中的孔将晶体生长容器（11）内的源气体（4）的1％〜50％排出到晶体生长容器 生长容器（11）。

    Wavelength converter manufacturing method and wavelength converter
    27.
    发明授权
    Wavelength converter manufacturing method and wavelength converter 有权
    波长转换器制造方法和波长转换器

    公开(公告)号：US07995267B2

    公开(公告)日：2011-08-09

    申请号：US12510267

    申请日：2009-07-28

    申请人： Issei Satoh ,  Michimasa Miyanaga ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Michimasa Miyanaga ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    IPC分类号： G02F1/35

    CPC分类号： G02F1/3558 ,  G02F1/353 ,  G02F2001/3548

    摘要： Affords a wavelength converter manufacturing method and a wavelength converter whereby the transmissivity can be improved. A method of manufacturing a wavelength converter (10a) is provided with the following steps. At first, crystal is grown. Then a first crystal (11) and a second crystal (12) are formed by sectioning the crystal into two or more in such a way that the domains are the reverse of each other. The first and second crystals (11) and (12) are then interlocked in such a way that a domain inversion structure in which the polar directions of the first and second crystals (11) and (12) periodically reverse along an optical waveguide (13) is formed, and the domain inversion structure satisfies quasi-phase-matching conditions for an incoming beam (101).

    摘要翻译： 提供一种波长转换器制造方法和波长转换器，由此能够提高透射率。 制造波长转换器（10a）的方法具有以下步骤。 起初，晶体生长。 然后通过将晶体分成两个或更多个使得畴相反的方式形成第一晶体（11）和第二晶体（12）。 然后将第一和第二晶体（11）和（12）互锁，使得第一和第二晶体（11）和（12）的极性方向沿着光波导（13）周期性地反转的畴反转结构 ），域反转结构满足入射光束（101）的准相位匹配条件。

    METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
    28.
    发明申请
    METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE 有权
    制备氮化物基质和氮化物基质的方法

    公开(公告)号：US20110156213A1

    公开(公告)日：2011-06-30

    申请号：US13061307

    申请日：2009-08-26

    申请人： Satoshi Arakawa ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    发明人： Satoshi Arakawa ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L21/02021 ,  C30B25/00 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02013 ,  H01L21/02389

    摘要： A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.

    摘要翻译： 制造氮化物衬底的方法包括以下步骤。 首先，生长氮化物晶体。 然后，从氮化物晶体切割包括前表面的氮化物衬底。 在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。 当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过 通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。

    AlN Crystal and Method of Its Growth
    30.
    发明申请
    AlN Crystal and Method of Its Growth 审中-公开
    AlN晶体及其生长方法

    公开(公告)号：US20100242833A1

    公开(公告)日：2010-09-30

    申请号：US12524575

    申请日：2008-11-13

    申请人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Hideaki Nakahata

    IPC分类号： C30B23/02

    CPC分类号： C30B29/403 ,  C30B23/00 ,  C30B23/025 ,  C30B25/00 ,  C30B25/18

    摘要： The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate (4) having a major face (4m) with a 0 cm−2 density of micropipes (4mp) having tubal diameters of down to 1000 μm, and a not greater than 0.1 cm−2 density of micropipes (4mp) having tubal diameters of between 100 μm and less than 1000 μm; and a step of growing AlN crystal (5) onto the major face (4m) by vapor-phase deposition.

    摘要翻译： 本发明提供能够稳定生长大面积厚AlN晶体的AlN晶体生长方法。 本发明的AlN晶体生长方法具有如下步骤：制备具有0cm -2密度的具有至少1000μm的输卵管直径的微管（4mp）的主面（4m）的SiC衬底（4） 和不大于0.1cm -2密度的具有100μm至小于1000μm的输卵管直径的微管（4mp）; 以及通过气相沉积将AlN晶体（5）生长到主面（4m）上的步骤。