Processes for printing layers for electronic devices and printing apparatuses for performing the processes

    公开(公告)号:US20060144277A1

    公开(公告)日:2006-07-06

    申请号:US11026265

    申请日:2004-12-30

    IPC分类号: B41L35/14

    CPC分类号: H01L51/0005 H01L51/56

    摘要: An electronic device includes a printed layer. In one embodiment, a process for forming the electronic device includes placing a workpiece over a chuck within a printing apparatus. A temperature difference is established between the workpiece and a liquid composition. The process further includes continuously printing the liquid composition over the workpiece. A viscosity of the liquid composition is allowed to increase at a rate significantly higher than an ambient viscosity increase rate. In another embodiment, the workpiece is allowed to cool to a temperature significantly below an ambient temperature before printing occurs. In still another embodiment, a printing apparatus is used for continuously printing the liquid composition over the workpiece. The printing apparatus includes the chuck, a printing head, a container, a feed line, and a first temperature-adjusting element thermally coupled to the chuck, the printing head, the container the feed line, or a combination thereof.

    BACKPLANE STRUCTURES FOR SOLUTION PROCESSED ELECTRONIC DEVICES
    27.
    发明申请
    BACKPLANE STRUCTURES FOR SOLUTION PROCESSED ELECTRONIC DEVICES 审中-公开
    解决方案处理电子设备的背板结构

    公开(公告)号:US20110201207A1

    公开(公告)日:2011-08-18

    申请号:US13077176

    申请日:2011-03-31

    IPC分类号: H01L21/302 G03F7/20

    CPC分类号: H01L27/3246 H01L51/56

    摘要: There is provided a backplane for an organic electronic device. The backplane has a TFT substrate; a multiplicity of electrode structures; and a bank structure defining a multiplicity of pixel openings on the electrode structures. The bank structure has a height adjacent to the pixel opening, hA, and a height removed from the pixel opening, hR, and hA is significantly less than hR.

    摘要翻译: 提供了一种用于有机电子设备的背板。 背板具有TFT基板; 多个电极结构; 以及在电极结构上限定多个像素开口的堤结构。 银行结构具有与像素开口相邻的高度hA,并且从像素开口移除的高度hR和hA显着小于hR。

    PROCESS FOR FORMING ENCAPSULATED ELECTRONIC DEVICES
    28.
    发明申请
    PROCESS FOR FORMING ENCAPSULATED ELECTRONIC DEVICES 有权
    形成封装电子器件的方法

    公开(公告)号:US20110081735A1

    公开(公告)日:2011-04-07

    申请号:US12323642

    申请日:2008-11-26

    IPC分类号: H01L33/52 H01L21/56

    CPC分类号: H01L51/5246

    摘要: There is provided herein a process for forming an encapsulated electronic device. The device has active areas and sealing areas on a substrate. The process includes providing the substrate; forming a discontinuous pattern of a material having a first surface energy on at least a portion of the sealing areas; forming multiple active layers, where at least one active layer is formed by liquid deposition from a liquid medium having a surface energy greater than the first surface energy; providing an encapsulation assembly; and bonding the encapsulation assembly to the substrate in the sealing areas. Also provided are devices formed by the disclosed processes.

    摘要翻译: 这里提供了形成封装的电子器件的方法。 该设备在基板上具有有效区域和密封区域。 该方法包括提供基底; 在所述密封区域的至少一部分上形成具有第一表面能的材料的不连续图案; 形成多个活性层,其中至少一个活性层通过液体沉积形成,所述液体介质具有大于所述第一表面能的表面能; 提供封装组件; 以及将密封组件粘合到密封区域中的基底。 还提供了通过所公开的方法形成的装置。

    SOLUTION PROCESSED ELECTRONIC DEVICES
    29.
    发明申请
    SOLUTION PROCESSED ELECTRONIC DEVICES 审中-公开
    解决方案处理的电子设备

    公开(公告)号:US20110057170A1

    公开(公告)日:2011-03-10

    申请号:US12250759

    申请日:2008-10-14

    IPC分类号: H01L51/10 H01L51/40

    摘要: There is provided a process for forming an organic electronic device. The process includes the steps of providing a TFT substrate;forming a thick organic planarization layer over the substrate; forming on the planarization layer a multiplicity of thin first electrode structures having a first thickness, where the electrode structures have tapered edges with a taper angle of no greater than 75°; forming a buffer layer by liquid deposition of a composition including a buffer material in a first liquid medium, the buffer layer having a second thickness, wherein the second thickness is at least 20% greater than the first thickness; forming over the buffer layer a chemical containment pattern defining pixel openings; depositing into at least a portion of the pixel openings a composition including a first active material in a second liquid medium; and forming a second electrode.

    摘要翻译: 提供了形成有机电子器件的方法。 该方法包括提供TFT基板的步骤; 在衬底上形成厚的有机平面化层; 在平坦化层上形成多个具有第一厚度的薄的第一电极结构,其中电极结构具有不大于75°的锥角的锥形边缘; 通过在第一液体介质中液体沉积包括缓冲材料的组合物形成缓冲层,所述缓冲层具有第二厚度,其中所述第二厚度比所述第一厚度大至少20%; 在所述缓冲层上形成限定像素开口的化学容纳图案; 在像素开口的至少一部分中沉积包含第二液体介质中的第一活性材料的组合物; 并形成第二电极。

    Electronic device including a guest material within a layer and a process for forming the same
    30.
    发明授权
    Electronic device including a guest material within a layer and a process for forming the same 失效
    包括层内的客体材料的电子设备及其形成方法

    公开(公告)号:US07420205B2

    公开(公告)日:2008-09-02

    申请号:US11840367

    申请日:2007-08-17

    IPC分类号: H01L33/00 H01L51/00

    摘要: An electronic device made by a process that includes forming a first layer over a substrate and placing a first liquid composition over a first portion of the first layer. The first liquid composition includes at least a first guest material and a first liquid medium. The first liquid composition comes in contact with the first layer and a substantial amount of the first guest material intermixes with the first layer. An electronic device includes a substrate and a continuous first layer overlying the substrate. The continuous layer includes a first portion in which an electronic component lies and a second portion where no electronic component lies. The first portion is at least 30 nm thick and includes a first guest material, and the second portion is no more than 40 nm thick.

    摘要翻译: 一种通过包括在基底上形成第一层并将第一液体组合物放置在第一层的第一部分上的方法制造的电子器件。 第一液体组合物包括至少第一客体材料和第一液体介质。 第一液体组合物与第一层接触并且大量的第一客体材料与第一层混合。 电子器件包括衬底和覆盖衬底的连续的第一层。 连续层包括电子部件所在的第一部分和没有电子部件所在的第二部分。 第一部分为至少30nm厚,并且包括第一客体材料,并且第二部分不超过40nm厚。