Illumination system for a microlithography projection exposure apparatus, microlithography projection exposure apparatus comprising such an illumination system, and fourier optical system
    21.
    发明授权
    Illumination system for a microlithography projection exposure apparatus, microlithography projection exposure apparatus comprising such an illumination system, and fourier optical system 有权
    用于微光刻投影曝光装置的照明系统,包括这种照明系统的微光刻投影曝光装置和光学系统

    公开(公告)号:US08537335B2

    公开(公告)日:2013-09-17

    申请号:US12917956

    申请日:2010-11-02

    CPC classification number: G03F7/70116 G03F7/70075

    Abstract: An illumination system for a microlithography projection exposure apparatus for illuminating an illumination field with the light from a primary light source has a variably adjustable pupil shaping unit for receiving light from the primary light source and for generating a variably adjustable two-dimensional intensity distribution in a pupil shaping surface of the illumination system. The pupil shaping unit has a Fourier optical system for converting an entrance beam bundle entering through an entrance plane of the Fourier optical system into an exit beam bundle exiting from an exit plane of the Fourier optical system. The Fourier optical system has a focal length fFOS and a structural length L measured between an entrance-side first system surface and an exit-side last system surface along an optical axis, where (L/fFOS)

    Abstract translation: 一种用于利用来自初级光源的光照射照明场的微光刻投影曝光设备的照明系统具有可变地调节的瞳孔成形单元,用于接收来自主光源的光并且用于产生可变地调节的二维强度分布 照明系统的瞳孔成形表面。 瞳孔成形单元具有傅里叶光学系统,用于将通过傅立叶光学系统的入射面进入的入射束束转换成从傅立叶光学系统的出射平面离开的出射光束束。 傅里叶光学系统具有焦距fFOS和在沿着光轴的入射侧第一系统表面和出射侧最后系统表面之间测量的结构长度L,其中(L / fFOS)<1/6。

    METHOD FOR ADJUSTING AN ILLUMINATION SYSTEM OF A PROJECTION EXPOSURE APPARATUS FOR PROJECTION LITHOGRAPHY
    24.
    发明申请
    METHOD FOR ADJUSTING AN ILLUMINATION SYSTEM OF A PROJECTION EXPOSURE APPARATUS FOR PROJECTION LITHOGRAPHY 有权
    调整投影曝光装置照明系统的方法

    公开(公告)号:US20120242968A1

    公开(公告)日:2012-09-27

    申请号:US13421024

    申请日:2012-03-15

    CPC classification number: G03F7/70075 G03F7/70083 G03F7/70191 G03F7/702

    Abstract: A method includes moving a correction device into a neutral position; subsequently ascertaining, for a given arrangement of imaging light channels in the illumination optical unit of the projection exposure apparatus, intensity distributions of at least some of the individual imaging light partial beams along a transverse coordinate transverse to a displacement direction of an object to be imaged; subsequently ascertaining, in dependence on the transverse coordinate, an actual variation of actual values of structure image sizes of object structures in an image field, onto which the object is imaged; and subsequently specifying a predetermined variation of the structure image sizes over the transverse coordinate and displacing correction elements of the correction device, starting from the neutral position, such that the actual variation matches the predetermined variation within a tolerance bandwidth. The method can provide improved imaging results as compared to known uniformity adjustment.

    Abstract translation: 一种方法包括将校正装置移动到中立位置; 随后确定对于投影曝光设备的照明光学单元中的成像光通道的给定布置,沿着横向于待成像对象的位移方向的横向坐标的各个成像光部分光束的至少一些的强度分布 ; 随后根据横坐标确定对象被成像的图像场中的对象结构的结构图像尺寸的实际值的实际变化; 并且随后从中性位置开始指定校正装置的横向坐标和位移校正元件上的结构图像尺寸的预定变化,使得实际变化与公差带宽内的预定变化相匹配。 与已知的均匀度调整相比,该方法可以提供改善的成像结果。

    ILLUMINATION SYSTEM FOR EUV MICROLITHOGRAPHY
    25.
    发明申请
    ILLUMINATION SYSTEM FOR EUV MICROLITHOGRAPHY 有权
    EUV微观照明系统

    公开(公告)号:US20110177463A1

    公开(公告)日:2011-07-21

    申请号:US13038453

    申请日:2011-03-02

    Abstract: An illumination system for EUV microlithography includes an EUV light source which generates EUV illumination light with an etendue that is higher than 0.01 mm2. The EUV light source generates a sequence of EUV light pulses having a pulse sequence frequency. An illumination optics of the illumination system is used to guide the illumination light from the light source to an object field. At least one optical modulation component of the illumination system is preferably modulatable synchronously with the pulse sequence frequency. The result is an illumination system where a homogeneity of an object field illumination is improved.

    Abstract translation: 用于EUV微光刻的照明系统包括产生具有高于0.01mm 2的光密度的EUV照明光的EUV光源。 EUV光源产生具有脉冲序列频率的EUV光脉冲序列。 照明系统的照明光学器件用于将来自光源的照明光引导到物场。 照明系统的至少一个光调制部件优选地可以与脉冲序列频率同步地进行调制。 其结果是改善了物场照明的均匀性的照明系统。

    ILLUMINATION SYSTEM FOR A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS COMPRISING SUCH AN ILLUMINATION SYSTEM, AND FOURIER OPTICAL SYSTEM
    26.
    发明申请
    ILLUMINATION SYSTEM FOR A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS COMPRISING SUCH AN ILLUMINATION SYSTEM, AND FOURIER OPTICAL SYSTEM 有权
    用于微型投影曝光装置的照明系统,包含这种照明系统的微型投影曝光装置和四光源系统

    公开(公告)号:US20110102758A1

    公开(公告)日:2011-05-05

    申请号:US12917956

    申请日:2010-11-02

    CPC classification number: G03F7/70116 G03F7/70075

    Abstract: An illumination system for a microlithography projection exposure apparatus for illuminating an illumination field with the light from a primary light source has a variably adjustable pupil shaping unit for receiving light from the primary light source and for generating a variably adjustable two-dimensional intensity distribution in a pupil shaping surface of the illumination system. The pupil shaping unit has a Fourier optical system for converting an entrance beam bundle entering through an entrance plane of the Fourier optical system into an exit beam bundle exiting from an exit plane of the Fourier optical system. The Fourier optical system has a focal length fFOS and a structural length L measured between an entrance-side first system surface and an exit-side last system surface along an optical axis, where (L/fFOS)

    Abstract translation: 一种用于利用来自初级光源的光照射照明场的微光刻投影曝光设备的照明系统具有可变地调节的瞳孔成形单元,用于接收来自主光源的光并且用于产生可变地调节的二维强度分布 照明系统的瞳孔成形表面。 瞳孔成形单元具有傅里叶光学系统,用于将通过傅立叶光学系统的入射面进入的入射束束转换成从傅立叶光学系统的出射平面离开的出射光束束。 傅里叶光学系统具有焦距fFOS和在沿着光轴的入射侧第一系统表面和出射侧最后系统表面之间测量的结构长度L,其中(L / fFOS)<1/6。

    Illumination system for EUV microlithography
    28.
    发明授权
    Illumination system for EUV microlithography 有权
    EUV微光刻照明系统

    公开(公告)号:US09304400B2

    公开(公告)日:2016-04-05

    申请号:US13038453

    申请日:2011-03-02

    Abstract: An illumination system for EUV microlithography includes an EUV light source which generates EUV illumination light with an etendue that is higher than 0.01 mm2. The EUV light source generates a sequence of EUV light pulses having a pulse sequence frequency. An illumination optics of the illumination system is used to guide the illumination light from the light source to an object field. At least one optical modulation component of the illumination system is preferably modulatable synchronously with the pulse sequence frequency. The result is an illumination system where a homogeneity of an object field illumination is improved.

    Abstract translation: 用于EUV微光刻的照明系统包括产生具有高于0.01mm 2的光密度的EUV照明光的EUV光源。 EUV光源产生具有脉冲序列频率的EUV光脉冲序列。 照明系统的照明光学器件用于将来自光源的照明光引导到物场。 照明系统的至少一个光调制部件优选地可以与脉冲序列频率同步地进行调制。 其结果是改善了物场照明的均匀性的照明系统。

    Microlithographic projection exposure apparatus having a multi-mirror array with temporal stabilisation
    30.
    发明授权
    Microlithographic projection exposure apparatus having a multi-mirror array with temporal stabilisation 有权
    具有具有时间稳定性的多镜阵列的微光刻投影曝光装置

    公开(公告)号:US08724086B2

    公开(公告)日:2014-05-13

    申请号:US12818844

    申请日:2010-06-18

    Abstract: A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(γ) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points. The illumination optics further contain at least one optical system to temporally stabilize the illumination of the multi-mirror array so that, for each object field point, the intensity distribution in the associated exit pupil deviates from a second adjusted intensity distribution in the associated exit pupil by less than 0.1 in at least one of an inner σ or an outer σ.

    Abstract translation: 公开了一种用于微光刻的投影曝光装置,包括用于照射物平面中的物场的对象场点的照明光学装置。 对于物场的每个物场点,照明光学器件具有与对象点相关联的出射光瞳,其中sin(γ)是出射光瞳的最大边缘角度值。 照明光学器件包括多镜阵列,其包括多个反射镜以调整与对象场点相关联的出射光瞳中的强度分布。 照明光学器件还包含至少一个光学系统,用于在时间上稳定多镜阵列的照明,使得对于每个物体场点,相关出射光瞳中的强度分布偏离相关出射光瞳中的第二调整的强度分布 在内部和外部的至少一个中小于0.1; 或外部的。

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