Illumination system having a beam deflection array for illuminating a mask in a microlithographic projection exposure apparatus
    2.
    发明授权
    Illumination system having a beam deflection array for illuminating a mask in a microlithographic projection exposure apparatus 有权
    具有用于在微光刻投影曝光装置中照射掩模的光束偏转阵列的照明系统

    公开(公告)号:US09007563B2

    公开(公告)日:2015-04-14

    申请号:US12711059

    申请日:2010-02-23

    IPC分类号: G03B27/54 G03F7/20

    CPC分类号: G03F7/702 G03F7/70116

    摘要: An illumination system for illuminating a mask in a scanning microlithographic projection exposure apparatus has an objective with an object plane, at least one pupil surface and an image plane in which a mask can be arranged. A beam deflection array of reflective or transparent beam deflection elements is provided, where each beam deflection element is adapted to deflect an impinging light ray by a deflection angle that is variable in response to a control signal. The beam deflection elements are arranged in or in close proximity to the object plane of the objective.

    摘要翻译: 用于在扫描微光刻投影曝光装置中照射掩模的照明系统具有物镜,其具有物平面,至少一个瞳孔表面和可以布置掩模的图像平面。 提供反射或透明光束偏转元件的光束偏转阵列,其中每个光束偏转元件适于使入射光线偏转响应于控制信号而变化的偏转角。 光束偏转元件布置在物镜的物平面中或紧邻物镜的物平面。

    ILLUMINATION OPTICS FOR PROJECTION MICROLITHOGRAPHY AND RELATED METHODS
    4.
    发明申请
    ILLUMINATION OPTICS FOR PROJECTION MICROLITHOGRAPHY AND RELATED METHODS 审中-公开
    用于投影微结构的照明光学及相关方法

    公开(公告)号:US20090262324A1

    公开(公告)日:2009-10-22

    申请号:US12464730

    申请日:2009-05-12

    IPC分类号: G03B27/80

    CPC分类号: G03F7/7085 G03F7/70116

    摘要: A microlithographic projection exposure apparatus (1) comprises an illumination system (4) with an illumination optics (5) for illuminating an illumination field in a reticle plane (6). The illumination optics (5) further includes a light distribution device (12a) which comprises a light deflection array (12) of separate elements and an optical assembly (21, 23 to 26) which converts the light intensity distribution defined by the light distribution device (12a) in a first plane (19) of the illumination optics (5) into an illumination angle distribution in the reticle plane (6). Downstream of an output coupling device (17), which is arranged in the light path between the light deflection array (12) and the reticle plane (6), a space and time resolving detection device (30) is exposed to outcoupled illumination light (31) in such a way that the detection device (30) detects a light intensity distribution corresponding to the light intensity distribution in the first plane (19). The detection device (30) allows the influence of separate elements or groups of separate elements on the light intensity distribution in the first plane (19) to be determined, particularly by varying said separate elements or groups of separate elements over time. The result is an illumination optics in which the function of the light deflection array is performed during normal operation.

    摘要翻译: 微光刻投影曝光装置(1)包括具有用于照亮标线板平面(6)中的照明场的照明光学器件(5)的照明系统(4)。 照明光学器件(5)还包括配光装置(12a),其包括分离元件的光偏转阵列(12)和光学组件(21,23至26),该光学组件(21,23至26)将由光分配装置 (5)的第一平面(19)中的光线(12a)成为所述掩模版平面(6)中的照明角度分布。 布置在光偏转阵列(12)和光罩平面(6)之间的光路中的输出耦合装置(17)的下游,空间和时间分辨检测装置(30)暴露于外耦合照明光 31),使得检测装置(30)检测对应于第一平面(19)中的光强度分布的光强度分布。 检测装置(30)允许确定分离的元件或单独元件组对第一平面(19)中的光强度分布的影响,特别是通过随时间改变所述单独元件或单独元件组。 结果是在正常操作期间执行光偏转阵列的功能的照明光学器件。

    Method for adjusting an illumination system of a projection exposure apparatus for projection lithography
    5.
    发明授权
    Method for adjusting an illumination system of a projection exposure apparatus for projection lithography 有权
    用于调整用于投影光刻的投影曝光装置的照明系统的方法

    公开(公告)号:US09176390B2

    公开(公告)日:2015-11-03

    申请号:US13421024

    申请日:2012-03-15

    摘要: A method includes moving a correction device into a neutral position; subsequently ascertaining, for a given arrangement of imaging light channels in the illumination optical unit of the projection exposure apparatus, intensity distributions of at least some of the individual imaging light partial beams along a transverse coordinate transverse to a displacement direction of an object to be imaged; subsequently ascertaining, in dependence on the transverse coordinate, an actual variation of actual values of structure image sizes of object structures in an image field, onto which the object is imaged; and subsequently specifying a predetermined variation of the structure image sizes over the transverse coordinate and displacing correction elements of the correction device, starting from the neutral position, such that the actual variation matches the predetermined variation within a tolerance bandwidth. The method can provide improved imaging results as compared to known uniformity adjustment.

    摘要翻译: 一种方法包括将校正装置移动到中立位置; 随后确定对于投影曝光装置的照明光学单元中的成像光通道的给定布置,沿着与待成像对象的位移方向横向的横向坐标的至少一些单独成像光部分光束的强度分布 ; 随后根据横坐标确定对象被成像的图像场中的对象结构的结构图像尺寸的实际值的实际变化; 并且随后从中性位置开始指定校正装置的横向坐标和位移校正元件上的结构图像尺寸的预定变化,使得实际变化与公差带宽内的预定变化相匹配。 与已知的均匀度调整相比,该方法可以提供改善的成像结果。

    Microlithographic projection exposure apparatus
    6.
    发明授权
    Microlithographic projection exposure apparatus 有权
    微光刻投影曝光装置

    公开(公告)号:US08891057B2

    公开(公告)日:2014-11-18

    申请号:US12818501

    申请日:2010-06-18

    IPC分类号: G03B27/42 G03F7/20

    摘要: A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(γ) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points. The illumination optics further contain at least one optical system to temporally stabilize the illumination of the multi-mirror array so that, for each object field point, the intensity distribution in the associated exit pupil deviates from a desired intensity distribution in the associated exit pupil in the case of a centroid angle value sin(β) by less than 2% expressed in terms of the greatest marginal angle value sin(γ) of the associated exit pupil and/or, in the case of ellipticity by less than 2%, and/or in the case of a pole balance by less than 2%.

    摘要翻译: 公开了一种用于微光刻的投影曝光装置,包括用于照射物平面中的物场的对象场点的照明光学装置。 对于物场的每个物场点,照明光学器件具有与对象点相关联的出射光瞳,其中sin(γ)是出射光瞳的最大边缘角度值。 照明光学器件包括多镜阵列,其包括多个反射镜以调整与对象场点相关联的出射光瞳中的强度分布。 照明光学器件还包含至少一个光学系统,用于暂时稳定多镜阵列的照明,使得对于每个物体场点,相关出射光瞳中的强度分布偏离相关联的出射光瞳中的期望强度分布 以关联出射光瞳的最大边缘角度值sin(γ)表示的质心角值sin(&bgr)小于2%的情况和/或在椭圆度小于2%的情况下, 和/或在极平衡小于2%的情况下。

    Illumination system for illuminating a mask in a microlithographic exposure apparatus
    7.
    发明授权
    Illumination system for illuminating a mask in a microlithographic exposure apparatus 有权
    用于在微光刻曝光设备中照射掩模的照明系统

    公开(公告)号:US08467031B2

    公开(公告)日:2013-06-18

    申请号:US12795014

    申请日:2010-06-07

    IPC分类号: G03B27/68 G03B27/32

    摘要: An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.

    摘要翻译: 提供微光刻投影曝光装置的照明系统,其被配置为照亮位于掩模平面中的掩模。 该系统包括光束成形光学子系统和照射光束偏转部件的照明器光学器件。 为了确定光束偏转分量的特性,确定照明系统的系统光瞳表面中的强度分布。 然后确定光束偏转分量的特性,使得瞳孔成形子系统在系统光瞳表面中产生的强度分布近似于之前确定的强度分布。 在该确定中考虑以下像差中的至少一个:(i)由照明器光学器件产生的像差; (ii)由光瞳成形光学子系统产生的像差; (iii)由布置在系统光瞳表面和掩模平面之间的光学元件产生的像差。

    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    8.
    发明申请
    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置

    公开(公告)号:US20100283985A1

    公开(公告)日:2010-11-11

    申请号:US12818844

    申请日:2010-06-18

    IPC分类号: G03B27/54

    摘要: A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(γ) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points. The illumination optics further contain at least one optical system to temporally stabilize the illumination of the multi-mirror array so that, for each object field point, the intensity distribution in the associated exit pupil deviates from a desired intensity distribution in the associated exit pupil in the case of a centroid angle value sin(β) by less than 2% expressed in terms of the greatest marginal angle value sin(γ) of the associated exit pupil and/or, in the case of ellipticity by less than 2%, and/or in the case of a pole balance by less than 2%.

    摘要翻译: 公开了一种用于微光刻的投影曝光装置,包括用于照射物平面中的物场的对象场点的照明光学装置。 对于物场的每个物场点,照明光学器件具有与对象点相关联的出射光瞳,其中sin(γ)是出射光瞳的最大边缘角度值。 照明光学器件包括多镜阵列,其包括多个反射镜以调整与对象场点相关联的出射光瞳中的强度分布。 照明光学器件还包含至少一个光学系统,用于暂时稳定多镜阵列的照明,使得对于每个物体场点,相关出射光瞳中的强度分布偏离相关联的出射光瞳中的期望强度分布 以关联出射光瞳的最大边缘角度值sin(γ)表示的质心角值sin(&bgr)小于2%的情况和/或在椭圆度小于2%的情况下, 和/或在极平衡小于2%的情况下。

    ILLUMINATION SYSTEM FOR ILLUMINATING A MASK IN A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    9.
    发明申请
    ILLUMINATION SYSTEM FOR ILLUMINATING A MASK IN A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    用于在微波投影曝光装置中照射掩模的照明系统

    公开(公告)号:US20100157269A1

    公开(公告)日:2010-06-24

    申请号:US12711059

    申请日:2010-02-23

    IPC分类号: G03B27/54

    CPC分类号: G03F7/702 G03F7/70116

    摘要: An illumination system for illuminating a mask in a scanning microlithographic projection exposure apparatus has an objective with an object plane, at least one pupil surface and an image plane in which a mask can be arranged. A beam deflection array of reflective or transparent beam deflection elements is provided, where each beam deflection element is adapted to deflect an impinging light ray by a deflection angle that is variable in response to a control signal. The beam deflection elements are arranged in or in close proximity to the object plane of the objective.

    摘要翻译: 用于在扫描微光刻投影曝光装置中照射掩模的照明系统具有物镜,其具有物平面,至少一个瞳孔表面和可以布置掩模的图像平面。 提供反射或透明光束偏转元件的光束偏转阵列,其中每个光束偏转元件适于使入射光线偏转响应于控制信号而变化的偏转角。 光束偏转元件布置在物镜的物平面中或紧邻物镜的物平面。