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    SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS
    21.
    发明申请
    SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS 有权
    旋转转矩记忆细胞结构和方法

    公开(公告)号：US20160133670A9

    公开(公告)日：2016-05-12

    申请号：US13675458

    申请日：2012-11-13

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Stephen J. Kramer ,  Gurtej S. Sandhu

    IPC: H01L27/22 ,  H01L43/02

    CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise a STT stack including: a pinned ferromagnetic material in contact with an antiferromagnetic material; a tunneling barrier material positioned between a ferromagnetic storage material and the pinned ferromagnetic material; a multiferroic material in contact with the ferromagnetic storage material; and a first electrode and a second electrode, wherein the antiferromagnetic material, the pinned ferromagnetic material, and the ferromagnetic storage material are located between the first electrode and the second electrode. The STT memory cell structure can include a third electrode and a fourth electrode, wherein at least a first portion of the multiferroic material is located between the third and the fourth electrode.

    Abstract translation: 本文描述了旋转转矩传递（STT）存储单元结构和方法。 一个或多个STT存储器单元结构包括STT堆叠，其包括：与反铁磁材料接触的钉扎铁磁材料; 位于铁磁存储材料和被钉扎的铁磁材料之间的隧道阻挡材料; 与铁磁存储材料接触的多铁性材料; 以及第一电极和第二电极，其中所述反铁磁材料，所述钉扎铁磁材料和所述铁磁性存储材料位于所述第一电极和所述第二电极之间。 STT存储单元结构可以包括第三电极和第四电极，其中多铁性材料的至少第一部分位于第三和第四电极之间。

    WAFER REGISTRATION AND OVERLAY MEASUREMENT SYSTEMS AND RELATED METHODS
    22.
    发明申请
    WAFER REGISTRATION AND OVERLAY MEASUREMENT SYSTEMS AND RELATED METHODS 有权

    公开(公告)号：US20220108927A1

    公开(公告)日：2022-04-07

    申请号：US17644414

    申请日：2021-12-15

    Applicant: Micron Technology, Inc.

    Inventor： Nikolay A. Mirin ,  Robert Dembi ,  Richard T. Housley ,  Xiaosong Zhang ,  Jonathan D. Harms ,  Stephen J. Kramer

    IPC: H01L21/66 ,  H01L23/544 ,  H01L21/302 ,  H01L21/68

    Abstract: A method for measuring overlay between an interest level and a reference level of a wafer includes applying a magnetic field to a wafer, detecting at least one residual magnetic field emitted from at least one registration marker of a first set of registration markers within the wafer, responsive to the detected one or more residual magnetic fields, determining a location of the at least one registration marker of the first set registration markers, determining a location of at least one registration marker of a second set of registration markers, and responsive to the respective determined locations of the at least one registration marker of the first set of registration markers and the at least one registration marker of the second set of registration markers, calculating a positional offset between an interest level of the wafer and a reference level of the wafer. Related methods and systems are also disclosed.

    Spin torque transfer memory cell structures and methods
    27.
    发明授权
    Spin torque transfer memory cell structures and methods 有权

    公开(公告)号：US09666639B2

    公开(公告)日：2017-05-30

    申请号：US13675458

    申请日：2012-11-13

    Applicant: Micron Technology, Inc.

    Inventor： Stephen J. Kramer ,  Gurtej S. Sandhu

    IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise a STT stack including: a pinned ferromagnetic material in contact with an antiferromagnetic material; a tunneling barrier material positioned between a ferromagnetic storage material and the pinned ferromagnetic material; a multiferroic material in contact with the ferromagnetic storage material; and a first electrode and a second electrode, wherein the antiferromagnetic material, the pinned ferromagnetic material, and the ferromagnetic storage material are located between the first electrode and the second electrode. The STT memory cell structure can include a third electrode and a fourth electrode, wherein at least a first portion of the multiferroic material is located between the third and the fourth electrode.

    SEMICONDUCTOR DEVICES COMPRISING MAGNETIC MEMORY CELLS
    28.
    发明申请
    SEMICONDUCTOR DEVICES COMPRISING MAGNETIC MEMORY CELLS 有权
    包含磁记忆体的半导体器件

    公开(公告)号：US20160276405A1

    公开(公告)日：2016-09-22

    申请号：US15168054

    申请日：2016-05-29

    Applicant: Micron Technology, Inc.

    Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

    IPC: H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

    Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁性子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。

    SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS
    30.
    发明申请
    SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS 有权
    旋转转矩记忆细胞结构和方法

    公开(公告)号：US20130286722A1

    公开(公告)日：2013-10-31

    申请号：US13926780

    申请日：2013-06-25

    Applicant: Micron Technology, Inc.

    Inventor： Stephen J. Kramer ,  Gurtej S. Sandhu

    IPC: G11C11/16 ,  H01L27/22

    CPC classification number: G11C11/161 ,  G11C11/1675 ,  G11C11/22 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

    Abstract: Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material. The tunneling barrier material is a multiferroic material and the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are positioned between a first electrode and a second electrode.

    Abstract translation: 本文描述了旋转转矩传递（STT）存储单元结构和方法。 一个或多个STT存储器单元结构包括位于铁磁存储材料和与反铁磁材料接触的被钉扎铁磁材料之间的隧道阻挡材料。 隧道阻挡材料是多铁性材料，反铁磁材料，铁磁存储材料和钉扎铁磁材料位于第一电极和第二电极之间。

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