公开(公告)号：US20190333924A1

公开(公告)日：2019-10-31

申请号：US16443491

申请日：2019-06-17

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  John Mark Meldrim ,  Everett A. McTeer

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L21/285

Abstract: Some embodiments include a method in which an assembly is formed to have voids within a stack, and to have slits adjacent the voids. Peripheral boundaries of the voids have proximal regions near the slits and distal regions adjacent the proximal regions. A material is deposited within the voids under conditions which cause the material to form to a greater thickness along the distal regions than along the proximal regions. Some embodiments include an assembly having a stack of alternating first and second levels. The second levels include conductive material. Panel structures extend through the stack. The conductive material within the second levels has outer edges with proximal regions near the panel structures and distal regions adjacent the proximal regions. Interface material is along the outer edges of the conductive material and has a different composition along the proximal regions than along the distal regions.

公开(公告)号：US20190244908A1

公开(公告)日：2019-08-08

申请号：US15887064

申请日：2018-02-02

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Everett A. McTeer

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/285 ,  H01L23/528 ,  H01L21/311

CPC classification number: H01L23/53209 ,  H01L21/2855 ,  H01L21/31111 ,  H01L21/32133 ,  H01L21/76834 ,  H01L21/76852 ,  H01L23/528 ,  H01L23/5329

Abstract: Some embodiments include an integrated structure having a conductive region which contains one or more elements from Group 2 of the periodic table. Some embodiments include an integrated structure which has a conductive region over and directly against a base material. The conductive region includes one or more elements from Group 2 of the periodic table, and has a pair of opposing sidewalls along a cross-section. A capping material is over and directly against the conductive region. Protective material is along and directly against the sidewalls of the protective region.

公开(公告)号：US10361214B2

公开(公告)日：2019-07-23

申请号：US16186042

申请日：2018-11-09

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  John Mark Meldrim ,  Everett A. McTeer

IPC: H01L21/285 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11519 ,  H01L27/11565

Abstract: Some embodiments include a method in which an assembly is formed to have voids within a stack, and to have slits adjacent the voids. Peripheral boundaries of the voids have proximal regions near the slits and distal regions adjacent the proximal regions. A material is deposited within the voids under conditions which cause the material to form to a greater thickness along the distal regions than along the proximal regions. Some embodiments include an assembly having a stack of alternating first and second levels. The second levels include conductive material. Panel structures extend through the stack. The conductive material within the second levels has outer edges with proximal regions near the panel structures and distal regions adjacent the proximal regions. Interface material is along the outer edges of the conductive material and has a different composition along the proximal regions than along the distal regions.

公开(公告)号：US20160064666A1

公开(公告)日：2016-03-03

申请号：US14476312

申请日：2014-09-03

Applicant: Micron Technology, Inc.

Inventor： Tsz W. Chan ,  D.V. Nirmal Ramaswamy ,  Qian Tao ,  Yongjun Jeff Hu ,  Everett A. McTeer

IPC: H01L45/00

CPC classification number: H01L45/145 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/1608

Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.

Abstract translation: 一种存储单元，包括在衬底上的第一电极上的阈值切换材料。 存储单元包括阈值开关材料上的第二电极和阈值开关材料与第一电​​极和第二电极中的至少一个之间的至少一个电介质材料。 记忆材料覆盖在第二电极上。 电介质材料可以直接接触阈值开关材料和第一电极和第二电极中的每一个。 公开了仅在阈值开关材料和电极之间仅包含一个介电材料的存储单元。 还描述了包括存储单元的存储器件和形成存储器单元的方法。

公开(公告)号：US12170250B2

公开(公告)日：2024-12-17

申请号：US18157962

申请日：2023-01-23

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  John D. Hopkins ,  Everett A. McTeer ,  Yiping Wang ,  Rajesh Balachandran ,  Rita J. Klein ,  Yongjun J. Hu

IPC: H01L23/538 ,  G11C5/02 ,  G11C5/06 ,  H01L21/768 ,  H01L23/532 ,  H01L27/06

Abstract: A microelectronic device comprises a stack structure comprising insulative levels vertically interleaved with conductive levels. The conductive levels individually comprise a first conductive structure, and a second conductive structure laterally neighboring the first conductive structure, the second conductive structure exhibiting a concentration of β-phase tungsten varying with a vertical distance from a vertically neighboring insulative level. The microelectronic device further comprises slot structures vertically extending through the stack structure and dividing the stack structure into block structures, and strings of memory cells vertically extending through the stack structure, the first conductive structures between laterally neighboring strings of memory cells, the second conductive structures between the slot structures and strings of memory cells nearest the slot structures. Related memory devices, electronic systems, and methods are also described.

公开(公告)号：US20230397424A1

公开(公告)日：2023-12-07

申请号：US18324084

申请日：2023-05-25

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Everett A. McTeer ,  Rita J. Klein ,  John D. Hopkins ,  Nancy M. Lomeli ,  Xiao Li ,  Christopher R. Ritchie ,  Alyssa N. Scarbrough ,  Jiewei Chen ,  Sijia Yu ,  Naiming Liu

IPC: H10B43/27 ,  H10B41/27

CPC classification number: H10B43/27 ,  H10B41/27

Abstract: A microelectronic device comprises a stack structure, a memory pillar, and a boron-containing material. The stack structure comprises alternating conductive structures and dielectric structures. The memory pillar extends through the stack structure and defines memory cells at intersections of the memory pillar and the conductive structures. The boron-containing material is on at least a portion of the conductive structures of the stack structure. Related methods and electronic systems are also described.

公开(公告)号：US20230395149A1

公开(公告)日：2023-12-07

申请号：US17851865

申请日：2022-06-28

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  David Ross Economy ,  John D. Hopkins ,  Nancy M. Lomeli ,  Jiewei Chen ,  Rita J. Klein ,  Everett A. McTeer ,  Aaron P. Thurber

IPC: G11C16/04 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

CPC classification number: G11C16/0483 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming memory block regions individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings extend through the insulative tiers and the conductive tiers. The conductive tiers individually comprise a void-space extending laterally-across individual of the memory-block regions. At least one of conductive or semiconductive material is formed in the void-space laterally-outward of individual of the channel-material strings. Conductive molybdenum-containing metal material is formed in the void-space directly against the at least one of the conductive or the semiconductive material and a conductive line comprising the conductive molybdenum-containing metal material is formed therefrom. The at least one of the conductive or the semiconductive material is of different composition from that of the conductive molybdenum-containing metal material. Other embodiments, including structure independent of method, are disclosed.

公开(公告)号：US11672191B2

公开(公告)日：2023-06-06

申请号：US17162071

申请日：2021-01-29

Applicant: Micron Technology, Inc.

Inventor： Tsz W. Chan ,  D. V. Nirmal Ramaswamy ,  Qian Tao ,  Yongjun J. Hu ,  Everett A. McTeer

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/145 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/1608

Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.

公开(公告)号：US11594495B2

公开(公告)日：2023-02-28

申请号：US17209993

申请日：2021-03-23

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  John D. Hopkins ,  Everett A. McTeer ,  Yiping Wang ,  Rajesh Balachandran ,  Rita J. Klein ,  Yongjun J. Hu

IPC: H01L23/538 ,  H01L23/532 ,  H01L21/768 ,  G11C5/06 ,  G11C5/02 ,  H01L27/06

Abstract: A microelectronic device comprises a stack structure comprising insulative levels vertically interleaved with conductive levels. The conductive levels individually comprise a first conductive structure, and a second conductive structure laterally neighboring the first conductive structure, the second conductive structure exhibiting a concentration of β-phase tungsten varying with a vertical distance from a vertically neighboring insulative level. The microelectronic device further comprises slot structures vertically extending through the stack structure and dividing the stack structure into block structures, and strings of memory cells vertically extending through the stack structure, the first conductive structures between laterally neighboring strings of memory cells, the second conductive structures between the slot structures and strings of memory cells nearest the slot structures. Related memory devices, electronic systems, and methods are also described.

公开(公告)号：US20220254727A1

公开(公告)日：2022-08-11

申请号：US17660669

申请日：2022-04-26

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Lifang Xu ,  Rita J. Klein ,  Xiao Li ,  Everett A. McTeer

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L23/00

Abstract: An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.