公开(公告)号：US08470625B2

公开(公告)日：2013-06-25

申请号：US13037687

申请日：2011-03-01

申请人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/18 ,  H01L33/06 ,  H01L21/268 ,  H01L21/428

CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/22

摘要： A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.

摘要翻译： 通过在第一衬底的不平坦的主表面上依次层叠n型氮化物半导体层，有源层和p型氮化物半导体层，制造半导体发光器件的方法形成层压膜，形成多个第一 电极在p型氮化物半导体层的上表面上形成第一金属层以覆盖多个第一电极和p型氮化物半导体层的表面，在第二金属层的上表面上形成第二金属层 基板，通过面对第一和第二基板连接第一和第二金属层，切割第一基板或沿着发光元件的边界在第一基板上形成从第一基板上的第一金属层相反的表面侧的凹槽 并且从与第一基板上的第一金属层相反的表面侧将激光照射到发光器件的区域，以剥离第一基板。

公开(公告)号：US08461615B2

公开(公告)日：2013-06-11

申请号：US12875632

申请日：2010-09-03

申请人： Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/36 ,  H01L33/38

摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.

公开(公告)号：US08242532B2

公开(公告)日：2012-08-14

申请号：US12873753

申请日：2010-09-01

申请人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

发明人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

IPC分类号： H01L33/26

CPC分类号： H01L33/20 ,  H01L33/46

摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

摘要翻译： 根据一个实施例，提供了具有高光提取效率的半导体发光器件。 半导体发光器件包括透光衬底; 形成在所述透光基板的顶面侧上方或上方的第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层的顶面上的由氮化物半导体制成的有源层; 形成在有源层的顶面上的第二导电类型的氮化物半导体层; 介电层，其形成在所述透光性基板的底面上，折射率低于所述透光性基板的折射率; 以及形成在电介质层的底面上的金属层。 并且透光基板和电介质层之间的界面是不平坦的面，并且介电层和金属层之间的界面是平坦的面。

公开(公告)号：US20120187446A1

公开(公告)日：2012-07-26

申请号：US13218728

申请日：2011-08-26

申请人： Toshihide ITO ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Toshihide ITO ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/18 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L33/42

摘要： According to one embodiment, a semiconductor light emitting device includes first and second conductive layers, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting part. The second semiconductor layer is provided between the first conductive layer and the first semiconductor layer. The light emitting part is provided between the first and second semiconductor layers. The second conductive layer is in contact with the second semiconductor layer and the first conductive layer between the second semiconductor layer and the first conductive layer. The first and second conductive layers are transmittable to light emitted from the light emitting part. The first conductive layer includes a polycrystal having a first average grain diameter. The second conductive layer includes a polycrystal having a second average grain diameter of 150 nanometers or less and smaller than the first average grain diameter.

摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二导电层，第一导电类型的第一半导体层，第二导电类型的第二半导体层和发光部分。 第二半导体层设置在第一导电层和第一半导体层之间。 发光部分设置在第一和第二半导体层之间。 第二导电层与第二半导体层和第二导电层在第二半导体层和第一导电层之间接触。 第一和第二导电层可透射从发光部分发射的光。 第一导电层包括具有第一平均晶粒直径的多晶体。 第二导电层包括第二平均粒径为150纳米以下且小于第一平均粒径的多晶体。

公开(公告)号：US08188510B2

公开(公告)日：2012-05-29

申请号：US12873753

申请日：2010-09-01

申请人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

发明人： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

IPC分类号： H01L33/26

摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

公开(公告)号：US08178891B2

公开(公告)日：2012-05-15

申请号：US12874475

申请日：2010-09-02

申请人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/04 ,  H01L33/06

摘要： Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.

摘要翻译： 某些实施例提供一种半导体发光器件，包括：第一金属层; 包括p型氮化物半导体层，有源层和n型氮化物半导体层的堆叠膜; n电极; 第二金属层; 以及保护膜，其保护所述n型氮化物半导体层的上表面的外周区域，所述堆叠膜的侧面，除了与所述p型膜接触的区域以外的所述第二金属层的上表面的区域， 氮化物半导体层以及与第二金属层接触的区域以外的第一金属层的上表面的区域。 在n型氮化物半导体层的上表面的区域形成凹凸，该区域位于设置有n电极的区域的外部，并且覆盖有保护膜的区域之外。

公开(公告)号：US20120061713A1

公开(公告)日：2012-03-15

申请号：US13222912

申请日：2011-08-31

申请人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/42

CPC分类号： H01L33/42

摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

公开(公告)号：US20110215363A1

公开(公告)日：2011-09-08

申请号：US12875632

申请日：2010-09-03

申请人： Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/36

CPC分类号： H01L33/36 ,  H01L33/38

摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.

摘要翻译： 根据一个实施例，半导体发光器件包括层叠结构体，第一电极和第二电极。 层叠结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和发光部分。 层叠结构体在第二半导体层的一侧具有第一主表面。 第一电极设置在第一半导体上。 第二电极设置在第二半导体层上。 第一电极包括第一焊盘部分和从第一焊盘部分沿着第一延伸方向延伸的第一延伸部分。 第一延伸部分包括第一宽度增加部分。 第一宽度增加部分沿着与第一延伸方向正交的方向的宽度从第一焊盘部分朝向第一延伸部分的端部增加。

公开(公告)号：US20110215292A1

公开(公告)日：2011-09-08

申请号：US12874425

申请日：2010-09-02

申请人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/04 ,  H01L21/18

CPC分类号： H01L33/06 ,  H01L21/18 ,  H01L33/04 ,  H01L33/22 ,  H01L33/24

摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

摘要翻译： 某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层 氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中 形成n电极。

公开(公告)号：US08564006B2

公开(公告)日：2013-10-22

申请号：US13405985

申请日：2012-02-27

申请人： Koichi Tachibana ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.

摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。 衬底是单晶。 半导体功能层设置在基板的主表面上并且包括氮化物半导体。 基板包括设置在主表面中的多个结构体。 多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。 多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度 。