公开(公告)号：US08715791B2

公开(公告)日：2014-05-06

申请号：US11991745

申请日：2006-09-08

申请人： Munehiro Tada ,  Naoya Furutake ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

发明人： Munehiro Tada ,  Naoya Furutake ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

IPC分类号： C23C16/00

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming porous insulating film using cyclic siloxane raw material monomer, includes forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material and a compound raw material including a part of chemical structure including the cyclic organosiloxane raw material. The compound raw material may include a compound including a part of side chain of the cyclic organosiloxane raw material.

摘要翻译： 使用环状硅氧烷原料单体形成多孔绝缘膜的方法包括使用环状有机硅氧烷原料的混合气体和包含部分包含环状有机硅氧烷原料的化学结构的复合原料来形成多孔绝缘膜。 复合原料可以包括包含环状有机硅氧烷原料的侧链的一部分的化合物。

公开(公告)号：US07867906B2

公开(公告)日：2011-01-11

申请号：US11993285

申请日：2006-05-23

申请人： Mari Amano ,  Munehiro Tada ,  Naoya Furutake ,  Yoshihiro Hayashi

发明人： Mari Amano ,  Munehiro Tada ,  Naoya Furutake ,  Yoshihiro Hayashi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76877 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： A trench is formed in an insulation film formed on top of a semiconductor substrate, and a barrier metal film is formed on the surface of the trench. After a copper or copper alloy film is formed on the barrier metal film, an oxygen absorption film in which a standard energy of formation of an oxidation reaction in a range from room temperature to 400° C. is negative, and in which an absolute value of the standard energy of formation is larger than that of the barrier metal film is formed, and the assembly is heated in a temperature range of 200 to 400° C. A semiconductor device can thereby be provided that has highly reliable wiring, in which the adhesion to the barrier metal film in the copper interface is enhanced, copper diffusion in the interface is suppressed, and electromigration and stress migration are prevented.

摘要翻译： 在形成于半导体衬底顶部的绝缘膜上形成沟槽，并且在沟槽的表面上形成阻挡金属膜。 在阻挡金属膜上形成铜或铜合金膜之后，在室温至400℃的范围内形成氧化反应的标准能量为负的氧吸收膜，其中绝对值 的标准形成能量大于形成阻挡金属膜的能量，并且组件在200至400℃的温度范围内被加热。由此可以提供具有高可靠性布线的半导体器件，其中 增加了铜界面对阻挡金属膜的附着力，抑制了界面的铜扩散，防止了电迁移和应力迁移。

公开(公告)号：US20100219533A1

公开(公告)日：2010-09-02

申请号：US12278339

申请日：2007-02-06

申请人： Hiroto Ootake ,  Masayoshi Tagami ,  Munehiro Tada ,  Yoshihiro Hayashi

发明人： Hiroto Ootake ,  Masayoshi Tagami ,  Munehiro Tada ,  Yoshihiro Hayashi

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a wiring of the Damascene structure for preventing the TDDB withstand voltage degradation and for keeping the planarity to prevent the degradation of a focus margin. A trench wiring (213) is formed in an interlayer insulating film, which is composed of a silicon carbide-nitride film (205), a SiOCH film (206) and a silicon oxide film (207) [(e)]. The silicon oxide film (207) is etched at a portion adjacent to the wiring of a polished surface by dry etching or wet etching [(f)]. A silicon carbide-nitride film (SiCN) (214) is formed as a Cu cap film [(g)]. An interlayer insulating film is further formed thereon to form a conductive plug, a trench wiring and so on.

摘要翻译： 提供了一种用于防止TDDB耐电压劣化并保持平面性以防止聚焦余量劣化的镶嵌结构的布线。 沟槽布线（213）形成在由碳化硅 - 氮化物膜（SiO 2），SiOCH膜（206）和氧化硅膜（207）[（e）]组成的层间绝缘膜中。 氧化硅膜（207）通过干蚀刻或湿蚀刻（f）]在与抛光表面的布线相邻的部分被蚀刻。 形成碳化硅 - 氮化物膜（SiCN）（214）作为Cu帽膜[（g）]。 还在其上形成层间绝缘膜以形成导电插塞，沟槽布线等。

公开(公告)号：US20100096756A1

公开(公告)日：2010-04-22

申请号：US12522814

申请日：2008-01-08

申请人： Masayoshi Tagami ,  Yoshihiro Hayashi ,  Munehiro Tada ,  Takahiro Onodera ,  Naoya Furutake ,  Makoto Ueki ,  Mari Amano

发明人： Masayoshi Tagami ,  Yoshihiro Hayashi ,  Munehiro Tada ,  Takahiro Onodera ,  Naoya Furutake ,  Makoto Ueki ,  Mari Amano

IPC分类号： H01L23/52 ,  H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76858 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a multilayer interconnection including a copper interconnection film formed in a predetermined area within an insulating film, a liner film, and a high-melting-point metal film. The copper interconnection film is polycrystalline, and crystal grains occupying 40% or more of an area of a unit interconnection surface among crystal grains forming the polycrystal are oriented to (111) in a substrate thickness direction. The copper interconnection film has crystal conformity with the noble metal liner film. In a case where the high-melting-point metal film is formed of Ti and the noble metal liner film is a Ru film, the high-melting-point metal of Ti dissolves into Ru in a solid state to form the noble metal liner. Thus, a copper interconnection is formed with both of Cu diffusion barrier characteristics and Cu crystal conformity.

摘要翻译： 半导体器件具有包括形成在绝缘膜内的预定区域中的铜互连膜，衬里膜和高熔点金属膜的多层互连。 铜互连膜是多晶的，并且占据形成多晶体的晶粒中的单位互连表面的面积的40％以上的晶粒在基板厚度方向上取向为（111）。 铜互连膜与贵金属衬垫膜具有晶体一致性。 在高熔点金属膜由Ti形成并且贵金属衬垫膜是Ru膜的情况下，Ti的高熔点金属以固态溶解到Ru中以形成贵金属衬垫。 因此，铜互连形成为Cu扩散阻挡特性和Cu晶体一致性。

公开(公告)号：US20080251926A1

公开(公告)日：2008-10-16

申请号：US11884713

申请日：2006-02-14

申请人： Munehiro Tada ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

发明人： Munehiro Tada ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

IPC分类号： H01L23/532 ,  C08J7/18 ,  H01L21/768

CPC分类号： H01L21/3121 ,  B05D1/62 ,  C09D4/00 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/76801 ,  C08G77/04

摘要： An organic silicon film is formed by carrying out chemical vapor deposition with organic silicon compound being used as a raw material gas. The organic silicon compound contains at least silicon, hydrogen and carbon as a constituent thereof, and contains two or more groups having unsaturated bond, per a molecule thereof. The organic silicon compound is used in mixture with a silicon hydride gas.

摘要翻译： 通过用有机硅化合物作为原料气体进行化学气相沉积形成有机硅膜。 有机硅化合物至少含有硅，氢和碳作为其成分，并且每分子含有两个以上具有不饱和键的基团。 有机硅化合物与氢化硅气体混合使用。

公开(公告)号：US08198730B2

公开(公告)日：2012-06-12

申请号：US12522814

申请日：2008-01-08

申请人： Masayoshi Tagami ,  Yoshihiro Hayashi ,  Munehiro Tada ,  Takahiro Onodera ,  Naoya Furutake ,  Makoto Ueki ,  Mari Amano

发明人： Masayoshi Tagami ,  Yoshihiro Hayashi ,  Munehiro Tada ,  Takahiro Onodera ,  Naoya Furutake ,  Makoto Ueki ,  Mari Amano

IPC分类号： H01L23/52

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76858 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a multilayer interconnection including a copper interconnection film formed in a predetermined area within an insulating film, a liner film, and a high-melting-point metal film. The copper interconnection film is polycrystalline, and crystal grains occupying 40% or more of an area of a unit interconnection surface among crystal grains forming the polycrystal are oriented to (111) in a substrate thickness direction. The copper interconnection film has crystal conformity with the noble metal liner film. In a case where the high-melting-point metal film is formed of Ti and the noble metal liner film is a Ru film, the high-melting-point metal of Ti dissolves into Ru in a solid state to form the noble metal liner. Thus, a copper interconnection is formed with both of Cu diffusion barrier characteristics and Cu crystal conformity.

摘要翻译： 半导体器件具有包括形成在绝缘膜内的预定区域中的铜互连膜，衬里膜和高熔点金属膜的多层互连。 铜互连膜是多晶的，并且占据形成多晶体的晶粒中的单位互连表面的面积的40％以上的晶粒在基板厚度方向上取向为（111）。 铜互连膜与贵金属衬垫膜具有晶体一致性。 在高熔点金属膜由Ti形成并且贵金属衬垫膜是Ru膜的情况下，Ti的高熔点金属以固态溶解到Ru中以形成贵金属衬垫。 因此，铜互连形成为Cu扩散阻挡特性和Cu晶体一致性。

公开(公告)号：US20100219512A1

公开(公告)日：2010-09-02

申请号：US11991745

申请日：2006-09-08

申请人： Munehiro Tada ,  Naoya Furutake ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

发明人： Munehiro Tada ,  Naoya Furutake ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

IPC分类号： H01L23/29 ,  H01L21/47

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming porous insulating film using cyclic siloxane raw material monomer is provided, which method suppresses detachment of hydrocarbon and is able to form a low-density film.In a method where at least cyclic organosiloxane raw material 101 is supplied to a reaction chamber and an insulating film is formed by plasma vapor deposition method, above-mentioned problem is solved by a method for a forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material 101 and a compound raw material 103 including a part of chemical structure comprising the cyclic organosiloxane raw material 101. The compound raw material 103 is preferably a compound including a part of side chain of the cyclic organosiloxane raw material 101.

摘要翻译： 提供了使用环状硅氧烷原料单体形成多孔绝缘膜的方法，该方法抑制烃的分离并能够形成低密度膜。 在通过等离子体气相沉积法将至少环状有机硅氧烷原料101供给到反应室并形成绝缘膜的方法中，上述问题通过使用以下的混合气体形成多孔绝缘膜的方法来解决： 环状有机硅氧烷原料101和包含环状有机硅氧烷原料101的化学结构的一部分的复合原料103.化合物原料103优选为包含环状有机硅氧烷原料101的侧链的一部分的化合物。

公开(公告)号：US08188600B2

公开(公告)日：2012-05-29

申请号：US11571251

申请日：2005-06-24

申请人： Mari Amano ,  Munehiro Tada ,  Yoshihiro Hayashi

发明人： Mari Amano ,  Munehiro Tada ,  Yoshihiro Hayashi

IPC分类号： H01L23/522

CPC分类号： H01L21/76843 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76847 ,  H01L21/76864 ,  H01L21/76873

摘要： The present invention provides a semiconductor device which is capable of enhancing adhesion at an interface between a wire-protection film and copper, suppressing dispersion of copper at the interface to avoid electromigration and stress-inducing voids, and having a highly reliable wire. An interlayer insulating film, and a first etching-stopper film are formed on a semiconductor substrate on which a semiconductor device is fabricated. A first alloy-wire covered with a first barrier metal film is formed on the first etching-stopper film by a damascene process. The first alloy-wire is covered at an upper surface thereof with a first wire-protection film. The first wire-protection film covering an upper surface of the first alloy-wire contains at least one metal among metals contained in the first alloy-wire.

摘要翻译： 本发明提供一种半导体器件，其能够提高线保护膜与铜之间的界面处的粘附性，抑制铜在界面处的分散，避免电迁移和应力诱导空隙，并具有高可靠性的导线。 在其上制造半导体器件的半导体衬底上形成层间绝缘膜和第一蚀刻阻挡膜。 通过镶嵌工艺在第一蚀刻阻挡膜上形成被第一阻挡金属膜覆盖的第一合金线。 第一合金线在其上表面被第一线保护膜覆盖。 覆盖第一合金线的上表面的第一线保护膜包含第一合金线中包含的金属中的至少一种金属。

公开(公告)号：US08174122B2

公开(公告)日：2012-05-08

申请号：US12956333

申请日：2010-11-30

申请人： Mari Amano ,  Munehiro Tada ,  Naoya Furutake ,  Yoshihiro Hayashi

发明人： Mari Amano ,  Munehiro Tada ,  Naoya Furutake ,  Yoshihiro Hayashi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76877 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： A trench is formed in an insulation film formed on top of a semiconductor substrate, and a barrier metal film is formed on the surface of the trench. After a copper or copper alloy film is formed on the barrier metal film, an oxygen absorption film in which a standard energy of formation of an oxidation reaction in a range from room temperature to 400° C. is negative, and in which an absolute value of the standard energy of formation is larger than that of the barrier metal film is formed, and the assembly is heated in a temperature range of 200 to 400° C. A semiconductor device can thereby be provided that has highly reliable wiring, in which the adhesion to the barrier metal film in the copper interface is enhanced, copper diffusion in the interface is suppressed, and electromigration and stress migration are prevented.

摘要翻译： 在形成于半导体衬底顶部的绝缘膜上形成沟槽，并且在沟槽的表面上形成阻挡金属膜。 在阻挡金属膜上形成铜或铜合金膜之后，在室温至400℃的范围内形成氧化反应的标准能量为负的氧吸收膜，其中绝对值 的标准形成能量大于形成阻挡金属膜的能量，并且组件在200至400℃的温度范围内被加热。由此可以提供具有高可靠性布线的半导体器件，其中 增加了铜界面对阻挡金属膜的附着力，抑制了界面的铜扩散，防止了电迁移和应力迁移。

公开(公告)号：US08084294B2

公开(公告)日：2011-12-27

申请号：US11884713

申请日：2006-02-14

申请人： Munehiro Tada ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

发明人： Munehiro Tada ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

IPC分类号： H01L51/40

CPC分类号： H01L21/3121 ,  B05D1/62 ,  C09D4/00 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/76801 ,  C08G77/04

摘要： An organic silicon film is formed by carrying out chemical vapor deposition with organic silicon compound being used as a raw material gas. The organic silicon compound contains at least silicon, hydrogen and carbon as a constituent thereof, and contains two or more groups having unsaturated bond, per a molecule thereof. The organic silicon compound is used in mixture with a silicon hydride gas.

摘要翻译： 通过用有机硅化合物作为原料气体进行化学气相沉积形成有机硅膜。 有机硅化合物至少含有硅，氢和碳作为其成分，并且每分子含有两个以上具有不饱和键的基团。 有机硅化合物与氢化硅气体混合使用。