公开(公告)号：US5959401A

公开(公告)日：1999-09-28

申请号：US861116

申请日：1997-05-21

申请人： Shinya Asami ,  Masayoshi Koike

发明人： Shinya Asami ,  Masayoshi Koike

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01S5/343 ,  H01J1/62

CPC分类号： H01L33/32 ,  H01L33/325

摘要： A light-emitting semiconductor device consecutively includes a sapphire substrate, an AlN buffer layer, a silicon (Si) doped n.sup.+ -layer GaN, a Si-doped n-type GaN, a zinc (Zn) and Si-doped In.sub.0.20 Ga.sub.0.80 N emission layer, a magnesium (Mg) doped p-type Al.sub.0.08 Ga.sub.0.92 N layer as a cladding layer, an Mg-doped p-type GaN layer as a first contact layer, and an Mg-doped p.sup.+ -type GaN layer as a second contact layer. The cladding layer and the first and second contact layers have a total thickness of 10 nm to 150 nm which is thinner than that of a conventional p-layers by a half to one thirtieth. The emission layer is exposed to high growth temperature for 1.3 min. to 20 min. which is shorter than that of the conventional emission layer by a half to one thirtieth. As a result, crystallinity of the emission layer is improved, because it is prevented that In of the emission layer diffuses into the cladding and the contact layers, that N of the emission layer evaporates, and that Mg of the cladding and the contact layers diffuses into the emission layer.

摘要翻译： 发光半导体器件连续地包括蓝宝石衬底，AlN缓冲层，掺杂硅（Si）的n +层GaN，Si掺杂的n型GaN，锌（Zn）和掺杂Si的In0.GaGa。 80N发射层，作为包覆层的Mg（Mg）掺杂的p型Al0.08Ga0.92N层，作为第一接触层的Mg掺杂的p型GaN层，以及Mg掺杂的p +型GaN层作为 第二接触层。 包覆层和第一和第二接触层的总厚度为10nm至150nm，其比常规p层薄至半至第三十分之一。 发射层暴露于高生长温度1.3分钟。 至20分钟 其比常规发射层短一半至三十分之一。 结果，发光层的结晶度提高，因为防止发光层的In扩散到包层和接触层中，发光层的N蒸发，并且包层和接触层的Mg扩散 进入发射层。

公开(公告)号：US5945689A

公开(公告)日：1999-08-31

申请号：US616884

申请日：1996-03-18

申请人： Masayoshi Koike ,  Shinya Asami

发明人： Masayoshi Koike ,  Shinya Asami

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L33/06

摘要： An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With such a structure, a peak wavelength of the light source can be controlled, because the distances between atoms of the acceptor and the donor impurities are widened. Several arrangements can be made by, e.g., altering the thickness of each composite layer of the multi-layer structure, altering their composition ratio, forming undoped layer 5 between the impurity doped layers, and so forth. Further, luminous intensity of ultra violet color can be improved, because doping the donor impurity and the acceptor impurity realizes a donor-acceptor emission mechanism and abundant carriers. Several arrangements can be made by, e.g., optimizing the materials of the composite layers, optimizing their composition ratios, optimizing their lattice constants, and so forth to further enhance the luminous intensity of the light source.

公开(公告)号：US5587593A

公开(公告)日：1996-12-24

申请号：US423938

申请日：1995-04-19

申请人： Norikatsu Koide ,  Shiro Yamazaki ,  Junichi Umezaki ,  Shinya Asami

发明人： Norikatsu Koide ,  Shiro Yamazaki ,  Junichi Umezaki ,  Shinya Asami

IPC分类号： H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/325 ,  H01L33/16

摘要： A light-emitting semiconductor device includes a sapphire substrate whose main surface orientation is tilted by 1 to 4 degrees from its axis "a" , and layers epitaxially formed thereon. Tilting the surface orientation of the sapphire substrate enables uniform doping of a p-type impurity into the layers epitaxially grown thereon. As a result, the luminous intensity of the light-emitting semiconductor device is improved.

摘要翻译： 发光半导体器件包括其主表面取向从其轴线“a”<11 + E，ov2 + EE0>倾斜1至4度的蓝宝石衬底，以及外延形成于其上的层。 倾斜蓝宝石衬底的表面取向使得能够均匀地将p型杂质掺杂到其外延生长的层中。 结果，提高了发光半导体器件的发光强度。

公开(公告)号：US06326236B1

公开(公告)日：2001-12-04

申请号：US09497814

申请日：2000-02-03

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L2144

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

公开(公告)号：US06288416B1

公开(公告)日：2001-09-11

申请号：US09346935

申请日：1999-07-02

申请人： Masayoshi Koike ,  Shinya Asami

发明人： Masayoshi Koike ,  Shinya Asami

IPC分类号： H01L3300

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L33/06

摘要： An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With such a structure, a peak wavelength of the light source can be controlled, because the distances between atoms of the acceptor and the donor impurities are widened. Several arrangements can be made by, e.g., altering the thickness of each composite layer of the multi-layer structure, altering their composition ratio, forming undoped layer 5 between the impurity doped layers, and so forth. Further, luminous intensity of ultra violet color can be improved, because doping the donor impurity and the acceptor impurity realizes a donor-acceptor emission mechanism and abundant carriers. Several arrangements can be made by, e.g., optimizing the materials of the composite layers, optimizing their composition ratios, optimizing their lattice constants, and so forth to further enhance the luminous intensity of the light source.

公开(公告)号：US07045829B2

公开(公告)日：2006-05-16

申请号：US08681412

申请日：1996-07-23

申请人： Masayoshi Koike ,  Shinya Asami

发明人： Masayoshi Koike ,  Shinya Asami

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01S5/3213 ,  H01S5/32341

摘要： A Group III nitride compound semiconductor includes a multiple layer structure having an emission layer between an n-type cladding layer and a p-type cladding layer. The n-type cladding layer may be below the emission layer, having been formed on another n-type layer which was formed over a buffer Layer and a sapphire substrate. The emission layer has a thickness which is wider than the diffusion length of holes within the emission layer. The n-type cladding layer is doped with a donor impurity and has a lattice constant Substantially equal to a lattice constant of the emission layer. The p-type cladding layer is doped with an acceptor impurity and has a forbidden band sufficiently wider than the forbidden band of the emission layer in ordor to confine electrons injected into the emission layer.

摘要翻译： III族氮化物化合物半导体包括在n型包覆层和p型包覆层之间具有发射层的多层结构。 n型覆层可以在形成在缓冲层和蓝宝石衬底上的另一n型层上形成的发光层之下。 发光层的厚度比发光层内的孔的扩散长度宽。 n型包覆层掺杂有施主杂质，其晶格常数基本上等于发光层的晶格常数。 p型覆层被掺杂有受主杂质，并且具有比限制发射层中的发射层的禁带宽度更宽的禁带，以限制注入到发射层中的电子。

公开(公告)号：US06821800B2

公开(公告)日：2004-11-23

申请号：US10326398

申请日：2002-12-23

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1-Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

公开(公告)号：US06541293B2

公开(公告)日：2003-04-01

申请号：US10158830

申请日：2002-06-03

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2 >0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

公开(公告)号：US06420733B2

公开(公告)日：2002-07-16

申请号：US09922687

申请日：2001-08-07

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light- emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他势垒层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。