利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

29 条记录 (耗时 0.032 秒)

    Semiconductor light-emitting device
    2.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号：US6040588A

    公开(公告)日：2000-03-21

    申请号：US925325

    申请日：1997-09-08

    申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

    发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

    IPC分类号： H01L29/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L29/06 ,  H01L33/00

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

    摘要： A semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of In.sub.Y1 Ga.sub.1-Y1 N (Y1.gtoreq.0) and a quantum well layer being made of In.sub.Y2 Ga.sub.1-Y1 N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

    摘要翻译： 一种半导体发光器件，包括以下步骤：形成第一半导体层; 通过层叠由InY1Ga1-Y1N（Y1> / = 0）构成的阻挡层和由InY2Ga1-Y1N（Y2> Y1和Y2> 0）构成的量子阱层，在第一层上形成超晶格结构的发光层 半导体层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

    Semiconductor light-emitting device and manufacturing method thereof
    3.
    发明授权
    Semiconductor light-emitting device and manufacturing method thereof 失效
    半导体发光器件及其制造方法

    公开(公告)号：US06821800B2

    公开(公告)日：2004-11-23

    申请号：US10326398

    申请日：2002-12-23

    申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

    发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

    IPC分类号： H01L2100

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

    摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1-Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

    摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

    Semiconductor light-emitting device and manufacturing method thereof
    4.
    发明授权
    Semiconductor light-emitting device and manufacturing method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US06541293B2

    公开(公告)日：2003-04-01

    申请号：US10158830

    申请日：2002-06-03

    申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

    发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

    IPC分类号： H01L2100

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

    摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2 >0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

    摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

    Semiconductor light-emitting device and manufacturing method thereof
    5.
    发明授权
    Semiconductor light-emitting device and manufacturing method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US06420733B2

    公开(公告)日：2002-07-16

    申请号：US09922687

    申请日：2001-08-07

    申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

    发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

    摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light- emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

    摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他势垒层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

    Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
    7.
    发明授权
    Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device 失效
    具有III族氮化物化合物并且能够控制发光颜色的半导体器件，以及包括这种器件的平面显示器

    公开(公告)号：US5650641A

    公开(公告)日：1997-07-22

    申请号：US522110

    申请日：1995-08-31

    申请人： Michinari Sassa ,  Masayoshi Koike ,  Katsuhide Manabe ,  Norikatsu Koide ,  Hisaki Kato ,  Naoki Shibata ,  Makoto Asai ,  Shinya Asami

    发明人： Michinari Sassa ,  Masayoshi Koike ,  Katsuhide Manabe ,  Norikatsu Koide ,  Hisaki Kato ,  Naoki Shibata ,  Makoto Asai ,  Shinya Asami

    IPC分类号： H01L33/02 ,  H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/325 ,  H01L33/025

    摘要： A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Green light emission is obtained by this constitution. Further, only doping Zn of 5.times.10.sup.19 /cm.sup.3 into the emission layer (5) enables red light emission.

    摘要翻译： 适用于多色平板显示器的发光半导体器件（100）包括蓝宝石衬底（1），AlN缓冲层（2），掺杂硅（Si）的GaN n +层（3） 载流子（n型）浓度，高载流子（n型）浓度的Si掺杂（Alx2Ga1-x2）y2In1-2Nn +层（4），锌（Zn）和掺杂Si的p型（Al x Ga 1 -x1）y1In1-y1N发射层（5）和Mg掺杂（Alx2Ga1-x2）y2In1-y2N p层（6）。 AlN层（2）具有500厚度。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 n +层（4）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 发射层（5）厚约0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×10 17 / cm 3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 通过这种结构获得绿色发光。 此外，仅向发射层（5）掺杂5×10 19 / cm 3的Zn使得能够发红光。

    Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed
    8.
    发明授权
    Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed 失效
    使用III族氮化物化合物并具有形成电极的接触层的发光半导体器件

    公开(公告)号：US5753939A

    公开(公告)日：1998-05-19

    申请号：US813393

    申请日：1997-03-07

    申请人： Michinari Sassa ,  Naoki Shibata ,  Shinya Asami ,  Masayoshi Koike ,  Junichi Umezaki ,  Takahiro Kozawa

    发明人： Michinari Sassa ,  Naoki Shibata ,  Shinya Asami ,  Masayoshi Koike ,  Junichi Umezaki ,  Takahiro Kozawa

    IPC分类号： H01L21/205 ,  H01L33/02 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/025 ,  H01L33/32 ,  H01L33/325 ,  H01L33/382 ,  H01L2933/0016 ,  H01L33/40

    摘要： A light-emitting semiconductor device having an improved metal electrode and semiconductor structure that lowers the driving voltage of the device. The device has a hetero p-n junction structure. This structure includes: (1) an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; (2) a p-layer having p-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; and (3) an emission layer disposed between the n-layer and the p-layer. The device also has a metal electrode and a contact layer that is disposed between the p-layer and the metal electrode. The contact layer is doped with an acceptor impurity more heavily that is the p-layer. The acceptor impurity may be magnesium (Mg). The contact layer may be doped within the range of 1.times.10.sup.20 /cm.sup.3 to 1.times.10.sup.2l /cm.sup.3 and may comprise a first and a second contact layer.

    摘要翻译： 一种具有改善的金属电极和半导体结构的发光半导体器件，其降低了器件的驱动电压。 该器件具有异质p-n结结构。 该结构包括：（1）具有n型导电的n层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; （2）具有p型导电的p层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; 和（3）设置在n层和p层之间的发射层。 该器件还具有设置在p层和金属电极之间的金属电极和接触层。 接触层掺杂较多的受体杂质，即p层。 受主杂质可以是镁（Mg）。 接触层可以掺杂在1×10 20 / cm 3至1×102l / cm 3的范围内，并且可以包括第一和第二接触层。