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公开(公告)号：US20070150112A1
公开(公告)日：2007-06-28
申请号：US11611632
申请日：2006-12-15
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
CPC分类号： H01L21/6715 , H01L21/67219
摘要： In the present invention, an insulating material is applied onto a substrate in a coating treatment unit to form a coating insulating film. The substrate is heated in the heating processing unit, whereby the coating insulating film is hardened partway. A brush is then pressed against the front surface of the coating insulating film in a planarization unit and moved along the front surface of the coating insulating film, thereby planarizing the coating insulating film. The substrate is then heated to completely harden the coating insulating film. According to the present invention, the coating film can be planarized without using the CMP technology.
摘要翻译： 在本发明中，在涂布处理单元中的基板上涂布绝缘材料，形成涂布绝缘膜。 基板在加热处理单元中被加热，由此涂覆绝缘膜在中途硬化。 然后在平面化单元中将刷子压在涂覆绝缘膜的前表面上，并沿着涂层绝缘膜的前表面移动，从而使涂层绝缘膜平坦化。 然后将基板加热以完全硬化涂层绝缘膜。 根据本发明，可以在不使用CMP技术的情况下平坦化涂膜。
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公开(公告)号：US20070098901A1
公开(公告)日：2007-05-03
申请号：US11585860
申请日：2006-10-25
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
CPC分类号： H01L21/6715 , H01L21/02123 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/316 , H01L21/76819
摘要： It is an object to provide a method for forming a thin film which can be uniformly and precisely planarized without a high-loaded process as in a chemical mechanical polishing method and to provide a device used for the method. In a method for forming a thin film on a surface of a-semiconductor wafer as a substrate to be processed by supplying a coating solution to the wafer having asperities on the surface thereof, a thin film of a coating solution is planarized by placing the wafer having the thin film formed on the surface thereof in a solvent gas atmosphere generated in a treatment chamber, then spraying a solvent gas toward the surface of the wafer from a solvent-gas-supplying nozzle and, simultaneously, relatively moving the wafer and/or the solvent-gas-supplying nozzle in directions parallel to each other.
摘要翻译： 本发明的目的是提供一种形成薄膜的方法，其可以在化学机械抛光方法中没有高负载工艺的情况下均匀且精确地平坦化，并提供用于该方法的装置。 在通过向其表面具有凹凸的晶片供给涂布液的半导体晶片的表面上形成作为待加工基板的薄膜的方法中，通过将晶片的薄膜放置 在处理室中产生的溶剂气体气氛中在其表面上形成薄膜，然后从溶剂气体供给喷嘴向晶片的表面喷射溶剂气体，同时相对移动晶片和/或 溶剂气体供给喷嘴在彼此平行的方向上。
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公开(公告)号：US5010349A
公开(公告)日：1991-04-23
申请号：US494343
申请日：1990-03-16
申请人： Tsuyoshi Mizuno , Motoki Hirano
发明人： Tsuyoshi Mizuno , Motoki Hirano
CPC分类号： H01Q1/36
摘要： A plane patch antenna including patch and earth conductive plate members maintained in spaced-parallel relation to each other. A feeder shaft extends from the patch plate member for electrical connection of the patch plate member to a lead wire. The feeder shaft has a tapered portion extending from the patch plate member toward the earth plate member. The tapered portion has a cross-sectional area decreasing as going away from the patch plate member.
摘要翻译： 包括贴片和接地导电板构件的平面贴片天线彼此保持间隔平行的关系。 馈线轴从接片板构件延伸，用于将接线板构件电连接到引线。 馈送轴具有从接片板部件向接地板部件延伸的锥形部分。 锥形部分的横截面积随着离开片状部件而减小。
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公开(公告)号：US4939834A
公开(公告)日：1990-07-10
申请号：US263862
申请日：1988-10-28
CPC分类号： B23Q11/0883 , B23B31/261 , B23Q3/1554 , B23Q3/15713 , Y10T279/34 , Y10T409/30392 , Y10T409/30448 , Y10T409/30952 , Y10T483/115 , Y10T483/1743
摘要： A tool change mechanism in a machine tool includes a tool change arm arranged to attach a protection cover member to the forward end of a spindle head for protection of a ring secured to the forward end of a tool spindle in the spindle head and to remove the protection cover member for replacement with a tool holder of large diameter. The tool change arm is further arranged to insert the tool holder into the tool spindle and remove it from the tool spindle, the tool holder having a ring gear secured thereto for meshing engagement with the ring gear of the tool spindle and a protection cover part integrally formed therewith to be coupled with the forward end of the spindle head for protection of the ring gears meshed with each other when the tool holder has been inserted into the tool spindle. The tool change arm has a pair of tool grippers each having a first grip portion for engagement with the protection cover member and a second grip portion for engagement with the tool holder.
摘要翻译： 机床中的换刀机构包括：工具更换臂，其布置成将保护盖构件附接到主轴头的前端，用于保护固定到主轴头中的工具主轴的前端的环，并且移除 保护盖构件用于更换大直径工具架。 工具更换臂进一步布置成将工具架插入工具主轴并将其从工具主轴上拆下，工具架具有固定在其上的环形齿轮，用于与工具主轴的齿圈啮合并且整体地保护盖部分 与主轴头的前端连接，用于当工具架插入到工具主轴中时，保护彼此啮合的齿圈。 工具更换臂具有一对工具夹持器，每个工具夹具具有用于与保护盖构件接合的第一抓握部分和用于与工具夹具接合的第二抓握部分。
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公开(公告)号：US08684014B2
公开(公告)日：2014-04-01
申请号：US12849357
申请日：2010-08-03
申请人： Yoshifumi Amano , Tsuyoshi Mizuno
发明人： Yoshifumi Amano , Tsuyoshi Mizuno
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/6708 , H01L21/67109
摘要： Disclosed is a liquid processing apparatus and a liquid processing method, which can process an entire wafer at a sufficiently high temperature and can sufficiently suppress adhesion of particles on a surface of the wafer, when the peripheral portion of the wafer is processed. The liquid processing apparatus includes a holding part to hold the substrate, a rotation driving part to rotate the holding part, and a shield unit. The shield unit includes an opposed plate opposed to the substrate held by the holding part, a heating part to heat the substrate through the opposed plate, and a heated gas supplying part to supply heated gas to a surface of the substrate held by the holding part.
摘要翻译： 公开了一种液体处理装置和液体处理方法，其可以在足够高的温度下处理整个晶片，并且可以充分地抑制晶片的周边部分处理颗粒在晶片表面上的粘附。 液体处理装置包括用于保持基板的保持部分，旋转驱动部分以使保持部分旋转，以及屏蔽单元。 屏蔽单元包括与由保持部保持的基板相对的相对板，通过相对板加热基板的加热部分和加热气体供应部分，以将加热气体供应到由保持部分保持的基板的表面 。
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公开(公告)号：US08192796B2
公开(公告)日：2012-06-05
申请号：US12781867
申请日：2010-05-18
IPC分类号： B05D3/12
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
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27.发明申请Liquid Processing Method, Recording Medium Having Recorded Program for Executing Liquid Processing Method Therein and Liquid Processing Apparatus 有权液体处理方法，具有用于执行液体处理方法的记录程序的记录介质和液体处理装置公开(公告)号：US20120067846A1
公开(公告)日：2012-03-22
申请号：US13223543
申请日：2011-09-01
申请人： Tsuyoshi Mizuno , Hiromitsu Namba , Yuichiro Morozumi , Shingo Hishiya , Katsushige Harada , Fumiaki Hayase
发明人： Tsuyoshi Mizuno , Hiromitsu Namba , Yuichiro Morozumi , Shingo Hishiya , Katsushige Harada , Fumiaki Hayase
CPC分类号： C23F1/08 , H01L21/02087 , H01L21/0209 , H01L21/6708 , H01L21/68785 , H01L21/68792
摘要： Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.
摘要翻译： 公开了一种用于处理包括第一工艺和第二工艺的衬底的方法。 第一种方法包括通过可旋转地安装的支撑单元在其前表面和后表面上支撑由含钛膜形成的基板; 与支撑单元一起旋转基板; 并将含有氢氟酸的第一处理液体供给到所述基板的后表面，由此用所述第一处理液处理所述基板的后表面。 第二种方法包括在第一工艺完成之后，将含有氨过氧化氢混合物的第二处理液体供应到衬底的后表面，由此用第二处理液处理衬底的后表面。
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公开(公告)号：US07910157B2
公开(公告)日：2011-03-22
申请号：US11611632
申请日：2006-12-15
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
CPC分类号： H01L21/6715 , H01L21/67219
摘要： In the present invention, an insulating material is applied onto a substrate in a coating treatment unit to form a coating insulating film. The substrate is heated in the heating processing unit, whereby the coating insulating film is hardened partway. A brush is then pressed against the front surface of the coating insulating film in a planarization unit and moved along the front surface of the coating insulating film, thereby planarizing the coating insulating film. The substrate is then heated to completely harden the coating insulating film. According to the present invention, the coating film can be planarized without using the CMP technology.
摘要翻译： 在本发明中，在涂布处理单元中的基板上涂布绝缘材料，形成涂布绝缘膜。 基板在加热处理单元中被加热，由此涂覆绝缘膜在中途硬化。 然后在平面化单元中将刷子压在涂覆绝缘膜的前表面上，并沿着涂层绝缘膜的前表面移动，从而使涂层绝缘膜平坦化。 然后将基板加热以完全硬化涂层绝缘膜。 根据本发明，可以在不使用CMP技术的情况下平坦化涂膜。
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公开(公告)号：US20110030897A1
公开(公告)日：2011-02-10
申请号：US12908698
申请日：2010-10-20
IPC分类号： C23F1/08
CPC分类号： H01L21/316 , H01L21/31055 , H01L21/31111 , H01L21/6715
摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
摘要翻译： 在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜 加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。 接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。 此后，加热基板以固化涂膜。 这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。
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公开(公告)号：US07757625B2
公开(公告)日：2010-07-20
申请号：US11585860
申请日：2006-10-25
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
IPC分类号： B05C5/02
CPC分类号： H01L21/6715 , H01L21/02123 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/316 , H01L21/76819
摘要： It is an object to provide a method for forming a thin film which can be uniformly and precisely planarized without a high-loaded process as in a chemical mechanical polishing method and to provide a device used for the method. In a method for forming a thin film on a surface of a-semiconductor wafer as a substrate to be processed by supplying a coating solution to the wafer having asperities on the surface thereof, a thin film of a coating solution is planarized by placing the wafer having the thin film formed on the surface thereof in a solvent gas atmosphere generated in a treatment chamber, then spraying a solvent gas toward the surface of the wafer from a solvent-gas-supplying nozzle and, simultaneously, relatively moving the wafer and/or the solvent-gas-supplying nozzle in directions parallel to each other.
摘要翻译： 本发明的目的是提供一种形成薄膜的方法，其可以在化学机械抛光方法中没有高负载工艺的情况下均匀且精确地平坦化，并提供用于该方法的装置。 在通过向其表面具有凹凸的晶片供给涂布液的半导体晶片的表面上形成作为待加工基板的薄膜的方法中，通过将晶片的薄膜放置 在处理室中产生的溶剂气体气氛中在其表面上形成薄膜，然后从溶剂气体供给喷嘴向晶片的表面喷射溶剂气体，同时相对移动晶片和/或 溶剂气体供给喷嘴在彼此平行的方向上。
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