-
公开(公告)号：US07757626B2
公开(公告)日：2010-07-20
申请号：US11504581
申请日：2006-08-16
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
-
公开(公告)号：US20070048449A1
公开(公告)日：2007-03-01
申请号：US11504581
申请日：2006-08-16
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
-
公开(公告)号：US20100221436A1
公开(公告)日：2010-09-02
申请号：US12781867
申请日：2010-05-18
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
-
公开(公告)号：US08192796B2
公开(公告)日：2012-06-05
申请号：US12781867
申请日：2010-05-18
IPC分类号： B05D3/12
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
-
公开(公告)号：US20080008835A1
公开(公告)日：2008-01-10
申请号：US11562909
申请日：2006-11-22
申请人： Shouichi TERADA , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi TERADA , Tsuyoshi Mizuno , Takeshi Uehara
CPC分类号： H01L21/316 , H01L21/31055 , H01L21/31111 , H01L21/6715
摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
摘要翻译： 在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜 加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。 接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。 此后，加热基板以固化涂膜。 这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。
-
公开(公告)号：US07968468B2
公开(公告)日：2011-06-28
申请号：US11562909
申请日：2006-11-22
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311
CPC分类号： H01L21/316 , H01L21/31055 , H01L21/31111 , H01L21/6715
摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
摘要翻译： 在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜 加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。 接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。 此后，加热基板以固化涂膜。 这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。
-
公开(公告)号：US20070150112A1
公开(公告)日：2007-06-28
申请号：US11611632
申请日：2006-12-15
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
CPC分类号： H01L21/6715 , H01L21/67219
摘要： In the present invention, an insulating material is applied onto a substrate in a coating treatment unit to form a coating insulating film. The substrate is heated in the heating processing unit, whereby the coating insulating film is hardened partway. A brush is then pressed against the front surface of the coating insulating film in a planarization unit and moved along the front surface of the coating insulating film, thereby planarizing the coating insulating film. The substrate is then heated to completely harden the coating insulating film. According to the present invention, the coating film can be planarized without using the CMP technology.
摘要翻译： 在本发明中，在涂布处理单元中的基板上涂布绝缘材料，形成涂布绝缘膜。 基板在加热处理单元中被加热，由此涂覆绝缘膜在中途硬化。 然后在平面化单元中将刷子压在涂覆绝缘膜的前表面上，并沿着涂层绝缘膜的前表面移动，从而使涂层绝缘膜平坦化。 然后将基板加热以完全硬化涂层绝缘膜。 根据本发明，可以在不使用CMP技术的情况下平坦化涂膜。
-
公开(公告)号：US20070098901A1
公开(公告)日：2007-05-03
申请号：US11585860
申请日：2006-10-25
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
CPC分类号： H01L21/6715 , H01L21/02123 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/316 , H01L21/76819
摘要： It is an object to provide a method for forming a thin film which can be uniformly and precisely planarized without a high-loaded process as in a chemical mechanical polishing method and to provide a device used for the method. In a method for forming a thin film on a surface of a-semiconductor wafer as a substrate to be processed by supplying a coating solution to the wafer having asperities on the surface thereof, a thin film of a coating solution is planarized by placing the wafer having the thin film formed on the surface thereof in a solvent gas atmosphere generated in a treatment chamber, then spraying a solvent gas toward the surface of the wafer from a solvent-gas-supplying nozzle and, simultaneously, relatively moving the wafer and/or the solvent-gas-supplying nozzle in directions parallel to each other.
摘要翻译： 本发明的目的是提供一种形成薄膜的方法，其可以在化学机械抛光方法中没有高负载工艺的情况下均匀且精确地平坦化，并提供用于该方法的装置。 在通过向其表面具有凹凸的晶片供给涂布液的半导体晶片的表面上形成作为待加工基板的薄膜的方法中，通过将晶片的薄膜放置 在处理室中产生的溶剂气体气氛中在其表面上形成薄膜，然后从溶剂气体供给喷嘴向晶片的表面喷射溶剂气体，同时相对移动晶片和/或 溶剂气体供给喷嘴在彼此平行的方向上。
-
公开(公告)号：US08864933B2
公开(公告)日：2014-10-21
申请号：US12908698
申请日：2010-10-20
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
IPC分类号： C23F1/08 , H01L21/316 , H01L21/3105 , H01L21/311 , H01L21/67
CPC分类号： H01L21/316 , H01L21/31055 , H01L21/31111 , H01L21/6715
摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
摘要翻译： 在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜 加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。 接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。 此后，加热基板以固化涂膜。 这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。
-
公开(公告)号：US07926444B2
公开(公告)日：2011-04-19
申请号：US11585863
申请日：2006-10-25
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
CPC分类号： H01L21/6715
摘要： It is an object to provide a method for forming a thin film having a uniform thickness so as to follow asperities of a surface of a wafer to be processed and to provide a film-forming device used for the method. The film-forming device includes a treatment chamber for receiving a wafer and isolating the wafer from the air; a solvent-gas-supplying portion for supplying a solvent gas into the treatment chamber; a chuck for rotatably holding the wafer so that the downward-facing surface of the substrate is the surface on which a thin film is formed; a coating-solution-supplying portion for supplying a coating solution as a mist of charged particles toward the surface of the wafer; and a charging portion for charging the wafer with an electrical potential opposite to the charge of the particles.
摘要翻译： 本发明的目的是提供一种形成具有均匀厚度的薄膜的方法，以便遵循待加工晶片的表面的粗糙度，并提供用于该方法的成膜装置。 成膜装置包括用于接收晶片并将晶片与空气隔离的处理室; 用于将溶剂气体供给到处理室中的溶剂气体供给部; 用于可旋转地保持晶片的卡盘，使得基板的朝下的表面是其上形成有薄膜的表面; 涂料溶液供给部，其将作为带电粒子的雾的涂布溶液供给到所述晶片的表面; 以及用于对与晶粒的电荷相反的电位对晶片充电的充电部分。
-
-
-
-
-
-
-
-
-
搜索结果
35 条记录 (耗时 0.02 秒)