公开(公告)号：US06605518B1

公开(公告)日：2003-08-12

申请号：US09558657

申请日：2000-04-26

申请人： Kazuaki Ohmi ,  Katsumi Nakagawa ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Takao Yonehara

发明人： Kazuaki Ohmi ,  Katsumi Nakagawa ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Takao Yonehara

IPC分类号： H01L2146

CPC分类号： H01L21/76259 ,  Y10S438/96

摘要： To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane stress has concentratedly been produced to an extent that does not cause separation by the in-plane stress, and enlarging the in-plane stress to cause a crack in the stress riser layer, thereby separating the composite member.

摘要翻译： 为了在分离层中的固定位置产生裂纹，分离复合构件的方法包括在复合构件内部形成分离层的步骤，在分离层的内部形成面内应力的应力提升层 集中制造到不会由于面内应力而产生分离，扩大面内应力，引起应力提升层的裂纹，从而分离复合部件。

公开(公告)号：US06468663B1

公开(公告)日：2002-10-22

申请号：US09690982

申请日：2000-10-18

申请人： Nobuhiko Sato ,  Takao Yonehara

发明人： Nobuhiko Sato ,  Takao Yonehara

IPC分类号： B32B1304

CPC分类号： H01L21/02667 ,  H01L21/0203 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76251 ,  H01L21/76256 ,  Y10S438/974 ,  Y10T428/31663

摘要： A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the porous layer; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer; and etching off selectively the porous layer by use of a chemical etching solution.

摘要翻译： 制造半导体衬底的方法包括以下步骤：在包括单晶硅的第一衬底中形成多孔层; 在多孔层的孔的侧壁上形成保护膜; 在多孔层上形成无孔单晶硅层; 将无孔单晶硅层的表面粘合到具有绝缘层的第二衬底上; 并通过使用化学蚀刻溶液选择性地蚀刻多孔层。

公开(公告)号：US06413874B1

公开(公告)日：2002-07-02

申请号：US09217130

申请日：1998-12-21

申请人： Nobuhiko Sato

发明人： Nobuhiko Sato

IPC分类号： H01L21302

CPC分类号： H01L21/2007 ,  H01L21/30604 ,  H01L21/76254 ,  H01L21/76256

摘要： With a method according to the invention, a semiconductor article such as an SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is etched by heat treatment in a hydrogen-containing reducing atmosphere in order to remove the surface by a desired height and smooth it. The method is characterized in that the single crystal silicon film is arranged opposite to silicon oxide in a furnace during the etching process.

摘要翻译： 利用根据本发明的方法，通过在含氢还原气氛中进行热处理，蚀刻在其表面上形成绝缘体上的单晶硅膜的SOI衬底等半导体产品，以便通过在 所需的高度和光滑。 该方法的特征在于，在蚀刻工艺期间，单晶硅膜在炉中与氧化硅相对地布置。

公开(公告)号：US6143629A

公开(公告)日：2000-11-07

申请号：US389361

申请日：1999-09-03

申请人： Nobuhiko Sato

发明人： Nobuhiko Sato

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/3063 ,  H01L21/762 ,  H01L21/30

CPC分类号： H01L21/76262 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3063

摘要： In a process for producing a semiconductor substrate, comprising sealing surface pores of a porous silicon layer and thereafter forming a single-crystal layer on the porous silicon layer by epitaxial growth, intermediate heat treatment is carried out after the sealing and before the epitaxial growth and at a temperature higher than the temperature at the time of the sealing. This process improves crystal quality of the semiconductor substrate having the single-crystal layer formed by epitaxial growth and improves smoothness at the bonding interface when applied to bonded wafers this process enables the detection of the smaller particles on the surface by a laser light scattering method.

摘要翻译： 在制造半导体衬底的方法中，包括密封多孔硅层的表面孔，然后通过外延生长在多孔硅层上形成单晶层，在密封之后和外延生长之前进行中间热处理， 在高于密封时的温度的温度下。 该工艺提高了具有通过外延生长形成的单晶层的半导体衬底的晶体质量，并且当应用于接合晶片时，提高了接合界面处的平滑度，该工艺能够通过激光散射法检测表面上的较小颗粒。

公开(公告)号：US5727134A

公开(公告)日：1998-03-10

申请号：US386341

申请日：1995-02-10

申请人： Yuichi Higuchi ,  Nobuhiko Sato

发明人： Yuichi Higuchi ,  Nobuhiko Sato

IPC分类号： G06F3/12 ,  G06K15/00 ,  G06F15/00 ,  H04N1/40

CPC分类号： G06F3/1293 ,  G06K15/00 ,  G06K2215/0005 ,  G06K2215/0082

摘要： An output apparatus processes data input selectively from a plurality of host computers and outputs a data processing state. The output apparatus includes an input structure that inputs data selectively from the plurality of host computers, a discriminating device that discriminates from which one of the plurality of host computers the input data is supplied, and an informing device for informing an operator of the output apparatus of the data processing state of the output apparatus in response to a discrimination by the discriminating device. An output method performs the operations of the output apparatus, and can be performed by using a memory medium that stores a program used in a programmable output apparatus. The output apparatus may use a host interface, or a plurality of host interfaces, for the input structure.

摘要翻译： 输出装置处理从多台主机选择性输入的数据，并输出数据处理状态。 输出装置包括从多个主计算机选择性地输入数据的输入结构，识别多个主计算机中的哪个主计算机提供输入数据的识别装置，以及用于向输出装置通知操作者的通知装置 响应于识别装置的鉴别，输出装置的数据处理状态。 输出方法执行输出装置的操作，并且可以通过使用存储在可编程输出装置中使用的程序的存储介质来执行。 输出装置可以使用用于输入结构的主机接口或多个主机接口。

公开(公告)号：US5363793A

公开(公告)日：1994-11-15

申请号：US100188

申请日：1993-08-02

申请人： Nobuhiko Sato

发明人： Nobuhiko Sato

IPC分类号： C30B25/18 ,  H01L21/20 ,  C30B25/02

CPC分类号： C30B25/18 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02645 ,  Y10S117/902

摘要： A method of forming crystals is adapted to grow a single-crystal by subjecting a substrate having a free surface with mutually adjacent non-nucleation and nucleation surfaces to a crystal forming process. Each nucleation surface consists of an amorphous material, having a greater nucleation density than the non-nucleation surface, with respect to a material with which the single-crystal will be formed, and having an area sufficiently small to permit only one nucleus to be generated, which will grow into the single crystal. The non-nucleation surfaces are made of a material having a higher etching rate than the material of which the nucleation surfaces are made. After a process of implanting ions in the entire surface of the substrate, the resultant substrate is subjected to an etching process whereby the non-nucleation surface material alone is selectively etched to remove the unnecessarily ion-implanted portions of the material. Thus, in the ion implantation, which is performed without employing a resist and followed by selective etching, a great amount of ions can be implanted without involving the conventional problems and without complicating the method. Therefore, it is possible to achieve a sufficiently great difference in nucleation density between the nucleation and non-nucleation surfaces, thereby increasing the yield of crystal growth.

摘要翻译： 通过将具有相互相邻的非成核和成核表面的自由表面的基材进行结晶形成处理，使晶体形成的方法适于生长单晶。 每个成核表面由相对于形成单晶的材料相比具有比非成核表面更大的成核密度的无定形材料组成，并且具有足够小的面积以允许仅产生一个核 ，这将成长为单晶。 非成核表面由具有比制造成核表面的材料更高的蚀刻速率的材料制成。 在将离子注入到衬底的整个表面中的过程之后，对所得到的衬底进行蚀刻工艺，由此选择性地蚀刻非成核表面材料以除去材料的不必要的离子注入部分。 因此，在不使用抗蚀剂并且随后进行选择性蚀刻的情况下进行的离子注入中，可以注入大量的离子而不涉及常规问题，而不会使方法复杂化。 因此，可以在成核和非成核表面之间获得足够大的成核密度差，从而提高晶体生长的产率。

公开(公告)号：US5320907A

公开(公告)日：1994-06-14

申请号：US704731

申请日：1991-05-20

申请人： Nobuhiko Sato

发明人： Nobuhiko Sato

IPC分类号： C30B29/06 ,  C30B19/12 ,  C30B25/18 ,  C30B29/60 ,  H01L21/20 ,  H01L21/205 ,  H01L21/84 ,  C30B19/00

CPC分类号： H01L21/02532 ,  C30B19/12 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02645

摘要： A crystal article comprises a substrate, a plurality of single crystals provided on said substrate with adjacent single crystals contacting each other and a void generation preventive body filling the portion surrounded by said plurality of single crystals.

摘要翻译： 一种晶体制品，包括一基板，多个单晶提供在所述基片上，相邻的单晶彼此接触;以及一空隙生成预防体填充由所述多个单晶围绕的部分。

公开(公告)号：US09155160B2

公开(公告)日：2015-10-06

申请号：US13444395

申请日：2012-04-11

申请人： Taro Endo ,  Nobuhiko Sato ,  Itaru Takaya ,  Tomoyuki Hiroki ,  Koichi Ishige ,  Satoru Shiobara ,  Jun Kamatani ,  Yosuke Nishide

发明人： Taro Endo ,  Nobuhiko Sato ,  Itaru Takaya ,  Tomoyuki Hiroki ,  Koichi Ishige ,  Satoru Shiobara ,  Jun Kamatani ,  Yosuke Nishide

IPC分类号： H05B37/00

CPC分类号： H05B37/00 ,  H01L27/3211 ,  H01L51/0018

摘要： Provided is a method of manufacturing an organic electroluminescence display device including an organic electroluminescence element, which has element characteristics comparable to those in the case of a vacuum in-situ process, while utilizing a patterning approach based on photolithography. The method of manufacturing an organic electroluminescence display device includes: an organic compound layer-forming step of forming an organic compound layer at least on a first electrode; a release layer-forming step of forming a release layer on the organic compound layer; a release layer-processing step of processing the release layer; and an organic compound layer-processing step of removing the organic compound layer in a region not covered with the release layer processed in the release layer-processing step, and at least the lowermost layer out of the release layer is a deposited film formed of a material soluble in a polar solvent.

摘要翻译： 提供了一种制造有机电致发光显示装置的方法，该有机电致发光显示装置包括有机电致发光元件，其具有与真空原位工艺相同的元件特性，同时利用基于光刻的图案化方法。 制造有机电致发光显示装置的方法包括：至少在第一电极上形成有机化合物层的有机化合物层形成步骤; 在有机化合物层上形成剥离层的剥离层形成工序; 释放层处理步骤，用于处理脱模层; 以及有机化合物层加工步骤，除去在剥离层加工步骤中处理的脱模层未被覆盖的区域中的有机化合物层，并且至少从剥离层出来的最下层是由 材料溶于极性溶剂。

公开(公告)号：US20120274807A1

公开(公告)日：2012-11-01

申请号：US13442310

申请日：2012-04-09

申请人： Satoru Shiobara ,  Jun Kamatani ,  Yosuke Nishide ,  Taro Endo ,  Tomoyuki Hiroki ,  Nobuhiko Sato

发明人： Satoru Shiobara ,  Jun Kamatani ,  Yosuke Nishide ,  Taro Endo ,  Tomoyuki Hiroki ,  Nobuhiko Sato

IPC分类号： H04N5/76 ,  H05B33/14 ,  B05D5/12

CPC分类号： H01L51/0018 ,  H01L27/3211 ,  H01L51/56

摘要： Provided is a method of manufacturing an organic electroluminescence display device including: an organic compound layer-forming step of forming an organic compound layer on a first electrode; a release layer-forming step of forming a release layer on the organic compound layer; a first processing step for the release layer of patterning the release layer; an organic compound layer-processing step of removing the organic compound layer in a region not covered with the release layer processed in the first processing step for the release layer; and a second processing step for the release layer of removing a part of the release layer, in which the release layer is a deposited film formed of a charge-transportable organic compound and is dissolved by a solvent containing an organic solvent miscible with water.

摘要翻译： 提供一种制造有机电致发光显示装置的方法，包括：在第一电极上形成有机化合物层的有机化合物层形成步骤; 在有机化合物层上形成剥离层的剥离层形成工序; 图案化脱模层的剥离层的第一加工步骤; 有机化合物层加工步骤，在第一处理步骤中用于脱模层处理的未脱模层的区域中除去有机化合物层; 以及用于除去剥离层的一部分的剥离层的第二加工步骤，其中剥离层是由电荷输送性有机化合物形成的沉积膜，并且通过含有可与水混溶的有机溶剂的溶剂溶解。

公开(公告)号：US20120273457A1

公开(公告)日：2012-11-01

申请号：US13448642

申请日：2012-04-17

申请人： Shigeru Kido ,  Nobuhiko Sato ,  Tomoyuki Hiroki ,  Kenji Ookubo ,  Nozomu Izumi

发明人： Shigeru Kido ,  Nobuhiko Sato ,  Tomoyuki Hiroki ,  Kenji Ookubo ,  Nozomu Izumi

IPC分类号： B32B38/10 ,  B44C1/22

CPC分类号： G03F7/0035

摘要： Provided is a thin film patterning method for patterning a thin film made of one of inorganic, organic, and organic/inorganic materials provided on a first substrate including: forming and patterning a thin film made of a material A on the first substrate; forming a thin film made of a material B, which is one of inorganic, organic, and organic/inorganic materials, on the first substrate and on the thin film; bonding the thin film, which is formed on the thin film, to a second substrate, thereby laminating the first substrate and the second substrate together to produce a laminated substrate; and removing the thin film and the thin film, which is provided on the thin film, from the first substrate.

摘要翻译： 提供一种薄膜图案化方法，用于对由第一基板上提供的无机，有机和有机/无机材料之一构成的薄膜进行图案化，其包括：在第一基板上形成和图案化由材料A制成的薄膜; 在第一基板和薄膜上形成由无机，有机和有机/无机材料之一的材料B制成的薄膜; 将形成在薄膜上的薄膜接合到第二基板，从而将第一基板和第二基板层合在一起以制造层压基板; 以及从所述第一基板上去除所述薄膜和设置在所述薄膜上的所述薄膜。