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    Silicon carbide semiconductor device
    22.
    发明授权
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号：US08431974B2

    公开(公告)日：2013-04-30

    申请号：US12846400

    申请日：2010-07-29

    申请人： Takuma Suzuki ,  Hiroshi Kono ,  Takashi Shinohe

    发明人： Takuma Suzuki ,  Hiroshi Kono ,  Takashi Shinohe

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7802 ,  H01L21/0465 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7816

    摘要： According to the embodiment, a semiconductor device includes an SiC substrate of a first or second conductivity type. An SiC layer of the first conductivity type is formed on a front surface of the substrate, a first SiC region of the second conductivity type is formed on the SiC layer, a second SiC region of the first conductivity type is formed within a surface of the first SiC region, a gate dielectric is continuously formed on the SiC layer, the second SiC region, and the surface of the first SiC region interposed between the SiC layer and the second SiC region, a gate electrode is formed on the gate dielectric, a first electrode is embedded in a trench selectively formed in a part where the first SiC region adjoins the second SiC region, and a second electrode is formed on a back surface of the substrate.

    摘要翻译： 根据实施例，半导体器件包括第一或第二导电类型的SiC衬底。 第一导电类型的SiC层形成在基板的前表面上，第二导电类型的第一SiC区域形成在SiC层上，第一导电类型的第二SiC区域形成在 第一SiC区域，在SiC层，第二SiC区域和介于SiC层和第二SiC区域之间的第一SiC区域的表面上连续地形成栅极电介质，在栅极电介质上形成栅电极， 第一电极嵌入在第一SiC区域与第二SiC区域相邻的部分中选择性地形成的沟槽中，并且在衬底的背面上形成第二电极。

    SiC Schottky barrier semiconductor device
    24.
    发明申请
    SiC Schottky barrier semiconductor device 有权
    SiC肖特基势垒半导体器件

    公开(公告)号：US20080169475A1

    公开(公告)日：2008-07-17

    申请号：US11827553

    申请日：2007-07-12

    申请人： Johji Nishio ,  Takuma Suzuki ,  Chiharu Ota ,  Takashi Shinohe

    发明人： Johji Nishio ,  Takuma Suzuki ,  Chiharu Ota ,  Takashi Shinohe

    IPC分类号： H01L29/24 ,  H01L29/872

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1608

    摘要： A semiconductor device includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC semiconductor layer formed on the substrate, whose impurity concentration is lower than that of the substrate, a first electrode formed on the semiconductor layer and forming a Schottky junction with the semiconductor layer, a barrier height of the Schottky junction being 1 eV or less, plural second-conductivity-type junction barriers formed to contact the first electrode and each having a depth d1 from an upper surface of the semiconductor layer, a width w, and a space s between adjacent ones of the junction barriers, a second-conductivity-type edge termination region formed outside the junction barriers to contact the first electrode and having a depth d2 from the upper surface of the semiconductor layer, and a second electrode formed on the second surface of the substrate, wherein following relations are satisfied d1/d2≧1, s/d1≦0.6, and s/(w+s)≦0.33.

    摘要翻译： 半导体器件包括第一导电型SiC衬底，在衬底上形成的杂质浓度低于衬底的第一导电型SiC半导体层，形成在半导体层上并形成肖特基 与所述半导体层的接合，所述肖特基结的势垒高度为1eV以下，形成为与所述第一电极接触并且各自具有来自所述半导体层的上表面的深度d 1的多个第二导电型接合阻挡层， 宽度w和相邻接合屏障之间的空间s，形成在接合屏障外部的第二导电类型边缘终端区域，以接触第一电极并且具有距离半导体层的上表面的深度d 2;以及 形成在基板的第二表面上的第二电极，其中满足以下关系：d 1 / d 2> = 1，s / d 1 <= 0.6，以及s /（w + s）<= 0.33。

    Semiconductor device
    25.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09029869B2

    公开(公告)日：2015-05-12

    申请号：US13034264

    申请日：2011-02-24

    申请人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Makoto Mizukami ,  Takuma Suzuki ,  Johji Nishio

    发明人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Makoto Mizukami ,  Takuma Suzuki ,  Johji Nishio

    IPC分类号： H01L29/15 ,  H01L29/739 ,  H01L29/10 ,  H01L29/66

    CPC分类号： H01L29/7395 ,  H01L29/1033 ,  H01L29/66333

    摘要： One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface.

    摘要翻译： 半导体器件的一个实施例包括：包含第一和第二主表面的碳化硅衬底; 第一主表面上的第一导电型碳化硅层; 在所述第一碳化硅层的表面处的第二导电型第一碳化硅区域; 在第一碳化硅区域的表面处的第一导电型第二碳化硅区域; 在第一碳化硅区域的表面处的第二导电型第三碳化硅区域; 在第一碳化硅区域和第二碳化硅区域之间形成的杂质浓度高于第一碳化硅区域的第二导电型第四碳化硅区域; 栅极绝缘体; 形成在栅极绝缘体上的栅电极; 层间绝缘体; 连接到所述第二碳化硅区域和所述第三碳化硅区域的第一电极; 和在第二主表面上的第二电极。

    Method for forming gate oxide film of sic semiconductor device using two step oxidation process
    26.
    发明授权
    Method for forming gate oxide film of sic semiconductor device using two step oxidation process 有权
    使用两步氧化工艺形成半导体器件的栅极氧化膜的方法

    公开(公告)号：US08932926B2

    公开(公告)日：2015-01-13

    申请号：US12554369

    申请日：2009-09-04

    申请人： Hiroshi Kono ,  Takuma Suzuki

    发明人： Hiroshi Kono ,  Takuma Suzuki

    IPC分类号： H01L21/336 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66

    CPC分类号： H01L21/0465 ,  H01L29/1608 ,  H01L29/66068

    摘要： A method for manufacturing a semiconductor device, includes forming a gate oxide film on an SiC region by a first thermal oxidation treatment in a first oxidizing atmosphere, performing a second thermal oxidation treatment at an oxidation speed of at most 5 nm/hour in a second oxidizing atmosphere having a lower oxygen concentration than the first oxidizing atmosphere, to increase film thickness of the gate oxide film, after the first thermal oxidation treatment, and forming a gate electrode on the gate oxide film with the increased film thickness.

    摘要翻译： 一种半导体器件的制造方法，其特征在于，在第一氧化气氛中，通过第一热氧化处理，在SiC区域上形成栅极氧化膜，在第二氧化处理中以至少5nm /小时的氧化速度进行第二次热氧化处理 具有比第一氧化气氛低的氧浓度的氧化气氛，以在第一热氧化处理之后增加栅极氧化膜的膜厚度，并且在栅极氧化膜上形成具有增加的膜厚度的栅电极。

    SILICON CARBIDE SEMICONDUCTOR DEVICE
    27.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
    硅碳化硅半导体器件

    公开(公告)号：US20100308343A1

    公开(公告)日：2010-12-09

    申请号：US12846400

    申请日：2010-07-29

    申请人： Takuma Suzuki ,  Hiroshi Kono ,  Takashi Shinohe

    发明人： Takuma Suzuki ,  Hiroshi Kono ,  Takashi Shinohe

    IPC分类号： H01L29/78 ,  H01L29/24

    CPC分类号： H01L29/7802 ,  H01L21/0465 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7816

    摘要： According to the embodiment, a semiconductor device includes an SiC substrate of a first or second conductivity type. An SiC layer of the first conductivity type is formed on a front surface of the substrate, a first SiC region of the second conductivity type is formed on the SiC layer, a second SiC region of the first conductivity type is formed within a surface of the first SiC region, a gate dielectric is continuously formed on the SiC layer, the second SiC region, and the surface of the first SiC region interposed between the SiC layer and the second SiC region, a gate electrode is formed on the gate dielectric, a first electrode is embedded in a trench selectively formed in a part where the first SiC region adjoins the second SiC region, and a second electrode is formed on a back surface of the substrate.

    摘要翻译： 根据实施例，半导体器件包括第一或第二导电类型的SiC衬底。 第一导电类型的SiC层形成在基板的前表面上，第二导电类型的第一SiC区域形成在SiC层上，第一导电类型的第二SiC区域形成在 第一SiC区域，在SiC层，第二SiC区域和介于SiC层和第二SiC区域之间的第一SiC区域的表面上连续地形成栅极电介质，在栅极电介质上形成栅电极， 第一电极嵌入在第一SiC区域与第二SiC区域相邻的部分中选择性地形成的沟槽中，并且在衬底的背面上形成第二电极。

    Suspension device for vehicle
    28.
    发明授权
    Suspension device for vehicle 有权
    车辆悬挂装置

    公开(公告)号：US07793955B2

    公开(公告)日：2010-09-14

    申请号：US11995245

    申请日：2006-06-12

    申请人： Takuma Suzuki ,  Tadashi Tamasho ,  Yutaka Mikuriya

    发明人： Takuma Suzuki ,  Tadashi Tamasho ,  Yutaka Mikuriya

    IPC分类号： B60G3/18 ,  B60G3/20

    CPC分类号： B60G3/26 ,  B60G7/008 ,  B60G2200/144 ,  B60G2200/18 ,  B60G2200/46 ,  B60G2204/148 ,  B60G2204/422

    摘要： To control a camber angle to an adequate value by the use of a lateral force acting on a wheel, without causing a displacement of a tire ground contact point.A suspension device includes a link mechanism replaceable by a first virtual link 11 which, when a lateral force acts at a tire ground contact point, inclines a wheel in a camber angle direction with respect to a vehicle body so as to increase the lateral force, and a second virtual link 12 which is connected virtually and rotatably between the first virtual link 11 and the vehicle body 1 and which is arranged to allow the wheel 2 to move in the up-and-down direction with respect to the vehicle body 1 in accordance with a load variation of the wheel in the up-and-down direction. A rotation center A in the camber angle direction and a rotation center B in the up-and-down direction, of the wheel with respect to the vehicle body are arranged so that a lateral movement amount of the tire ground contact point due to a change in the position of the first virtual link 11 is canceled by a lateral movement amount of the tire ground contact point due to a change in the position of the second virtual link 12.

    摘要翻译： 通过使用作用在车轮上的横向力来将外倾角控制在适当的值，而不会引起轮胎地面接触点的位移。 悬挂装置包括可由第一虚拟连杆11替代的连杆机构，当第一虚拟连杆11在侧向力作用于轮胎接地点时，相对于车身以相对于车体的外倾角方向倾斜车轮以增加横向力， 以及第二虚拟连杆12，其虚拟地和可旋转地连接在第一虚拟连杆11和车身1之间，并且被布置成允许车轮2相对于车身1在上下方向上移动 根据车轮在上下方向上的负载变化。 车轮相对于车身的外倾角方向的旋转中心A和上下方向的旋转中心B被配置为使得轮胎接地点由于变化而产生的横向移动量 由于第二虚拟连杆12的位置的变化，第一虚拟连杆11的位置被轮胎接地点的横向移动量所抵消。

    Image processor and image processing method
    29.
    发明授权
    Image processor and image processing method 失效
    图像处理器和图像处理方法

    公开(公告)号：US07650048B2

    公开(公告)日：2010-01-19

    申请号：US11224302

    申请日：2005-09-13

    申请人： Takuma Suzuki ,  Hiroyuki Okamoto

    发明人： Takuma Suzuki ,  Hiroyuki Okamoto

    IPC分类号： G06K9/32 ,  G09G5/00

    CPC分类号： H04N1/3935

    摘要： An image processor includes an image processing section, an enlargement processing section, and a controller. When image data including a second predetermined number of pixels to be output from an image output section, is generated on the basis of image data including a first predetermined number of pixels smaller than the second predetermined number input to an image data input unit, the controller controls the enlargement processing section to generate image data including a third predetermined number of pixels larger than the first predetermined number and smaller than the second predetermined number. The controller controls the image processing section to apply image processing to the image data including the third predetermined number of pixels. The controller also controls the enlargement processing section to generate the image data including the second predetermined number of pixels on the basis of the image data including the third predetermined number of pixels.

    摘要翻译： 图像处理器包括图像处理部分，放大处理部分和控制器。 当基于包括小于输入到图像数据输入单元的第二预定数量的第一预定数量的像素的图像数据生成包括要从图像输出部分输出的第二预定数量的像素的图像数据时，控制器 控制放大处理部分生成包括大于第一预定数量并小于第二预定数量的第三预定数量的像素的图像数据。 控制器控制图像处理部分对包括第三预定数量的像素的图像数据应用图像处理。 控制器还控制放大处理部分，基于包括第三预定数量的像素的图像数据，生成包括第二预定数量的像素的图像数据。