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公开(公告)号：US20240113093A1
公开(公告)日：2024-04-04
申请号：US18537324
申请日：2023-12-12
Applicant: ROHM CO., LTD.
Inventor： Masahiko ARIMURA , Tomoichiro TOYAMA
IPC: H01L25/16 , H01L23/00 , H01L23/495
CPC classification number: H01L25/167 , H01L23/49513 , H01L23/49541 , H01L23/49575 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/165 , H01L2224/32245 , H01L2224/48245 , H01L2224/73265
Abstract: This insulation module comprises: a light-emitting element that has a light-emitting surface and a pad formed on the light-emitting surface; a light-receiving element that has a light-receiving surface facing the light-emitting surface with a space therebetween, and that constitutes a photocoupler together with the light-emitting element; a plate-shaped member that is provided between the light-emitting surface and the light-receiving surface, has light-transmitting and insulating properties, and is inclined with respect to both the light-emitting surface and the light-receiving surface; and a wire that is connected to the pad. The pad is disposed offset from the center toward a section among the light-emitting surface where the distance to the plate-shaped member increases.
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公开(公告)号：US20240079847A1
公开(公告)日：2024-03-07
申请号：US18505772
申请日：2023-11-09
Applicant: ROHM CO., LTD.
Inventor： Tomoichiro TOYAMA
IPC: H01S5/02234
CPC classification number: H01S5/02234 , H01S5/183
Abstract: A semiconductor light emitting device includes a semiconductor laser element including a light emitting surface from which a laser beam is emitted and a light-transmissive resin member covering the light emitting surface of the semiconductor laser element. The semiconductor light emitting device further includes a diffusing agent mixed into the resin member.
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公开(公告)号：US20230073210A1
公开(公告)日：2023-03-09
申请号：US18056034
申请日：2022-11-16
Applicant: ROHM CO., LTD.
Inventor： Tomoichiro TOYAMA
Abstract: Semiconductor light-emitting device, includes: substrate having base and conductive part; first to third semiconductor light-emitting elements; first to third wires connected to the first to third semiconductor light-emitting elements respectively; and light-transmitting resin part covering the first to the third semiconductor light-emitting elements, wherein the base has main and rear surfaces facing opposite sides in thickness direction of the base, wherein the conductive part includes main surface part on the main surface, wherein the main surface part includes main surface first part where the first and second semiconductor light-emitting elements are mounted, wherein the main surface first part reaches both ends of the main surface in first direction perpendicular to the thickness direction, and wherein the main surface first part is separated from both the main surface part where the third semiconductor light-emitting element is mounted and the main surface part where the first, second, and third wires are connected.
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公开(公告)号：US20220236178A1
公开(公告)日：2022-07-28
申请号：US17597061
申请日：2020-06-30
Applicant: ROHM CO., LTD.
Inventor： Tomoichiro TOYAMA , Kazuisao TSURUDA
IPC: G01N21/3581 , H01Q9/16 , H03B7/08 , H01L29/861
Abstract: A terahertz device includes a base member, a terahertz element, an antenna base, and a reflection film. The terahertz element is mounted on the base member and configured to generate an electromagnetic wave. The antenna base is located opposing the base member and includes an antenna surface. The reflection film is formed on the antenna surface to reflect at least part of the electromagnetic wave generated by the terahertz element in one direction.
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公开(公告)号：US20220109233A1
公开(公告)日：2022-04-07
申请号：US17644225
申请日：2021-12-14
Applicant: ROHM CO., LTD.
Inventor： Toshikazu MUKAI , Jaeyoung KIM , Tomoichiro TOYAMA
Abstract: A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.
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Patent Agency Ranking
公开(公告)号：US20210151652A1
公开(公告)日：2021-05-20
申请号：US17161374
申请日：2021-01-28
Applicant: ROHM CO., LTD.
Inventor： Tomoichiro TOYAMA
Abstract: Semiconductor light-emitting device, includes: substrate having base and conductive part; first to third semiconductor light-emitting elements; first to third wires connected to the first to third semiconductor light-emitting elements respectively; and light-transmitting resin part covering the first to the third semiconductor light-emitting elements, wherein the base has main and rear surfaces facing opposite sides in thickness direction of the base, wherein the conductive part includes main surface part on the main surface, wherein the main surface part includes main surface first part where the first and second semiconductor light-emitting elements are mounted, wherein the main surface first part reaches both ends of the main surface in first direction perpendicular to the thickness direction, and wherein the main surface first part is separated from both the main surface part where the third semiconductor light-emitting element is mounted and the main surface part where the first, second, and third wires are connected.
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公开(公告)号：US20200313050A1
公开(公告)日：2020-10-01
申请号：US16807361
申请日：2020-03-03
Applicant: ROHM CO., LTD.
Inventor： Tomoichiro TOYAMA
Abstract: Semiconductor light emitting device includes: substrate including main and back surfaces, first and second side surfaces, and bottom and top surfaces, wherein main surface includes first to fourth sides; first main surface electrode on main surface and including first base portion contacting the sides of the main surface, and die pad connected to first base portion; second main surface electrode disposed on the main surface and including second base portion contacting first and third sides of the main surface, and wire pad connected to second base portion; semiconductor light emitting element including first electrode pad and mounted on die pad; wire connecting first electrode pad and wire pad; first insulating film covering portion between first base portion and die pad; second insulating film covering portion between second base portion and wire pad and having end portions contacting main surface; and light-transmitting sealing resin.
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公开(公告)号：US20200303610A1
公开(公告)日：2020-09-24
申请号：US16781113
申请日：2020-02-04
Applicant: ROHM CO., LTD.
Inventor： Tomoichiro TOYAMA
Abstract: Semiconductor light-emitting device, includes: substrate having base and conductive part; first to third semiconductor light-emitting elements; first to third wires connected to the first to third semiconductor light-emitting elements respectively; and light-transmitting resin part covering the first to the third semiconductor light-emitting elements, wherein the base has main and rear surfaces facing opposite sides in thickness direction of the base, wherein the conductive part includes main surface part on the main surface, wherein the main surface part includes main surface first part where the first and second semiconductor light-emitting elements are mounted, wherein the main surface first part reaches both ends of the main surface in first direction perpendicular to the thickness direction, and wherein the main surface first part is separated from both the main surface part where the third semiconductor light-emitting element is mounted and the main surface part where the first, second, and third wires are connected.
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公开(公告)号：US20200287114A1
公开(公告)日：2020-09-10
申请号：US16884973
申请日：2020-05-27
Applicant: Rohm Co., Ltd.
Inventor： Yosuke TAKA , Tomoichiro TOYAMA , Junichi ITAI
Abstract: The present disclosure provides a light emitting diode (LED) package, which ensures the reliability during use while adopting an LED chip of higher output. The LED package includes an LED chip, which has a front and a back facing opposite sides in the thickness direction z, and a first back electrode provided at the back surface; a first terminal in conduction with the first back electrode; and a first bonding layer, configured to bond the first back electrode and the first terminal 201; wherein the composition of the first bonding layer includes a metal eutectic composition containing Au, and when the LED chip is viewed in the thickness direction z, a first bent portion which is recessed toward the inner side of the periphery of the first back electrode is formed in the first bonding layer.
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公开(公告)号：US20190229247A1
公开(公告)日：2019-07-25
申请号：US16165798
申请日：2018-10-19
Applicant: Rohm Co., Ltd.
Inventor： Yosuke TAKA , Tomoichiro TOYAMA , Junichi ITAI
Abstract: The present disclosure provides a light emitting diode (LED) package, which ensures the reliability during use while adopting an LED chip of higher output. The LED package includes an LED chip (30), which has a front (30A) and a back (30B) facing opposite sides in the thickness direction z, and a first back electrode (302A) provided at the back surface (30B); a first terminal (201) in conduction with the first back electrode (302A); and a first bonding layer (311), configured to bond the first back electrode (302A) and the first terminal 201; wherein the composition of the first bonding layer (311) includes a metal eutectic composition containing Au, and when the LED chip (30) is viewed in the thickness direction z, a first bent portion (311A) which is recessed toward the inner side of the periphery of the first back electrode (302A) is formed in the first bonding layer (311).
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