摘要:
A photosensitive formulation for high-temperature-resistant photoresists is based on polyhydroxyamides. The photosensitive formulations display a much higher photosensitivity than the comparable formulations based on quinone azide photoactive components. After conversion to the polybenzoxazole, the novel formulations also display a lower dielectric constant than the quinone azide-based formulations. A film can be made by applying the photosensitive formulation to a wafer and then evaporating the solvent. A method for fabricating electronics and micorelectronics structures a wafer by using the film in photolithography.
摘要:
There are disclosed polybenzoxazole precursors which can be processed by centrifugal techniques, which can be cyclized to polybenzoxazoles on substrates without difficulty, and which after cyclization to polybenzoxazoles exhibit a high temperature stability. In particular, these precursors and the polybenzoxazoles prepared from them possess high resistance against the diffusion of metals.
摘要:
The invention relates to novel o-aminophenolcarboxylic acids or o-aminothiophenolcarboxylic acids of the following structure in which: A1 to A7 are—independently of one another—H, CH3, OCH3, CH2CH3 or OCH2CH3; T is O or S, and m is 0 or 1; Z is a carbocyclic or heterocyclic aromatic radical.
摘要:
In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative with the following structure: ##STR1## where D=O, S, or NH, and where R* is the parent body of the dicarboxylic acid and at least one of the groups R.sup.1 through R.sup.5 is F or CF.sub.3.
摘要:
In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative with the following structure: M--CO--R*--CO--M where M stands for the residue of an (optionally substituted) 2-hydroxybenzoxazole, 2-hydroxybenzothiazole, or 1-hydroxybenzotriazole or of corresponding mercapto compounds and R* is the parent body of the dicarboxylic acid.
摘要:
A method for producing poly-o-hydroxy amides by conversion of an activated dicarboxylic acid derivative with a bis-o-aminophenol. A solution of the activated dicarboxylic acid derivative is added to a solution of the bis-o-aminophenol in a lactone, and a tertiary amine is added to the resulting mixture, wherein the lactone has the following structure: ##STR1## where A is--(CR.sup.1 R.sup.2).sub.m --or--(CR.sup.3 R.sup.4).sub.n --NR.sup.5 --, R.sup.1 to R.sup.5 are independent of one another R.sup.1 and R.sup.2 are hydrogen, alkyl with 1 to 7 carbon atoms (linear or branched), --CO(CH.sub.2).sub.p CH.sub.3, or --COO(CH.sub.2).sub.p CH.sub.3, with p=0 or 1, R.sup.3 and R.sup.4 are hydrogen or alkyl with 1 to 3 carbon atoms (linear or branched), R.sup.5 is hydrogen or methyl, m is a whole number from 2 to 11, and n is a whole number from 1 to 3.
摘要:
In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative of the following structure: ##STR1## with D=O, S, or NH and where R* is the parent body of the dicarboxylic acid and the groups R.sup.1 through R.sup.4 are H, F, CH.sub.3, or CF.sub.3 (with a maximum of two CH.sub.3 or CF.sub.3 groups).
摘要:
Premixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.
摘要:
New mixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.
摘要:
High resolution resist structures with steep edges are obtained using standard equipment, with high sensitivity, particularly in the deep UV range. A photoresist layer consisting of a polymer having anhydride groups and blocked imide- or phenolic hydroxyl groups and of a photoactive component which forms a strong acid during irradiation is first deposited on a substrate, followed by irradiation with a patterned image. The irradiated photoresist layer is then treated with a water-based or a water-alcohol-based solution of a polyfunctional amino- or hydroxy-siloxane, and is etched in an oxygen-containing plasma.