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10 条记录 (耗时 0.014 秒)

    Photosensitive mixture
    5.
    发明授权
    Photosensitive mixture 失效
    感光性混合物

    公开(公告)号：US5081000A

    公开(公告)日：1992-01-14

    申请号：US494614

    申请日：1990-03-16

    申请人： Eberhard Kuehn ,  Albert Hammerschmidt ,  Erwin Schmidt ,  Hellmut Ahne

    发明人： Eberhard Kuehn ,  Albert Hammerschmidt ,  Erwin Schmidt ,  Hellmut Ahne

    IPC分类号： G03F7/038 ,  C08K5/3432 ,  C08L101/00 ,  G03F7/004 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30

    CPC分类号： G03F7/004 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/111

    摘要： The invention provides photosensitive mixtures consisting of a polymer and a photoactive component which meet the requirements placed on photoresists. The polymer has carboxylic acid anhydride groups or phenolic hydroxyl groups and the photoactive component is an N-alkylated or N-arylated 1.4-dihydropyridine or a 1.4- dihydropyridine derivative of the following structure: ##STR1## where the R group is a (substituted) aryl group, which, in the ortho position to the bond with the dihydropyridine ring, carries a NO.sub.2 group; and R.sup.3 is alkyl, cyclohexyl or phenyl.

    摘要翻译： 本发明提供由聚合物和光活性组分组成的感光性混合物，其满足光刻胶的要求。 聚合物具有羧酸酐基团或酚羟基，光活性组分是以下结构的N-烷基化或N-芳基化的1,4-二氢吡啶或1,4-二氢吡啶衍生物：其中R基团是（取代的） 在与二氢吡啶环的键的邻位携带NO 2基团的芳基; 并且R 3是烷基，环己基或苯基。

    Photoresist compound and method for structuring a photoresist layer
    6.
    发明授权
    Photoresist compound and method for structuring a photoresist layer 有权
    光致抗蚀剂化合物和用于构造光致抗蚀剂层的方法

    公开(公告)号：US06841332B2

    公开(公告)日：2005-01-11

    申请号：US10133620

    申请日：2002-04-26

    申请人： Gertrud Falk ,  Eberhard Kuehn ,  Ernst Christian Richter ,  Michael Sebald

    发明人： Gertrud Falk ,  Eberhard Kuehn ,  Ernst Christian Richter ,  Michael Sebald

    IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039

    CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0392

    摘要： A photoresist compound or composition achieves a uniform volume growth in a chemical expansion on a chemically expandable photomask during a method for structuring a layer of the photoresist compound. The photoresist composition comprises a film-forming polymer having molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and reactive molecular groups that can react with an expansion component so as to form a chemical bond. In addition, the photoresist composition comprises a photoacid generator that releases an acid upon exposure with radiation from a suitable wavelength range, and a thermoacid generator that releases an acid when supplied with sufficient thermal energy.

    摘要翻译： 光致抗蚀剂化合物或组合物在用于构造光致抗蚀剂化合物层的方法期间在化学膨胀光掩模上的化学膨胀中实现均匀的体积生长。 光致抗蚀剂组合物包含具有可通过酸催化分离反应转化为碱溶性基团的分子基团的成膜聚合物和可与膨胀组分反应以形成化学键的反应性分子基团。 此外，光致抗蚀剂组合物包括光电产生剂，其在从合适的波长范围的辐射暴露时释放酸;以及热酸发生器，其在被供应足够的热能时释放酸。

    Photostructuring process
    9.
    发明授权
    Photostructuring process 失效
    照片制作过程

    公开(公告)号：US5250375A

    公开(公告)日：1993-10-05

    申请号：US812585

    申请日：1991-12-20

    申请人： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne ,  Eberhard Kuehn

    发明人： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne ,  Eberhard Kuehn

    IPC分类号： G03F7/26 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027 ,  G03C5/58

    CPC分类号： G03F7/40 ,  G03F7/039 ,  G03F7/405

    摘要： A process for producing structures in the submicron range is characterized by the following steps:a photoresist layer comprising a polymer constituent with functional groups, which are capable of reacting with primary or secondary amines, and N-blocked imide groups, a photoinitiator which releases an acid when irradiated and a suitable solvent is deposited on to a substrate;the photoresist layer is dried;the photoresist layer is exposed in an imagewise manner;the exposed photoresist layer is subjected to a temperature treatment;the photoresist layer treated in this manner is developed with an aqueous-alkaline or organic developing agent into a photoresist structure; andthe photoresist structure is treated with a chemical agent containing a primary or secondary amine; a defined dark field loss, is adjusted thereby during development in the range of between 20 and 100 nm.

    摘要翻译： 在亚微米范围内制造结构的方法的特征在于以下步骤：包含能与伯胺或仲胺反应的官能团的聚合物组分和N-封端的酰亚胺基的光致抗蚀剂层， 酸，并将合适的溶剂沉积在基材上; 干燥光致抗蚀剂层; 光致抗蚀剂层以成像方式曝光; 曝光的光刻胶层进行温度处理; 以这种方式处理的光致抗蚀剂层用含水碱性或有机显影剂显影成光致抗蚀剂结构; 并且用含有伯胺或仲胺的化学试剂处理光刻胶结构; 在20至100nm的范围内，在显影期间调节限定的暗场损耗。