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102 条记录 (耗时 0.015 秒)

    Semiconductor Arrangement Having a Resistive Memory
    3.
    发明申请
    Semiconductor Arrangement Having a Resistive Memory 审中-公开

    公开(公告)号：US20080191197A1

    公开(公告)日：2008-08-14

    申请号：US11572951

    申请日：2005-07-21

    申请人： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    发明人： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    IPC分类号： H01L51/30 ,  H01L51/40

    CPC分类号： H01L51/0052 ,  B82Y10/00 ,  G11C13/0014 ,  H01B1/121 ,  H01L27/11502 ,  H01L27/285 ,  H01L51/0036 ,  H01L51/0051

    摘要： A memory cell reversibly switchable between different stable electrical resistance states, the memory cell having a first electrode and a second electrode and an active layer arranged between the first and the second electrode, the active layer including a compound represented by general formula , wherein R1 and R2 are independently selected from —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —S(CH2)mCH3, —S-aryl, —NR3R4, —SR3 and -halogen; R1 and R2 may together form a ring; R5 and R6 are independently selected from —H, -alkyl, -aryl and -heteroaryl; m is either 0 or an integer ranging from 1 to 10; n is an integer ranging from 2 to 1000; and a compound represented by general formula wherein R7, R8, R9, R10, R11, R12, R13, and R14 are independently selected from the group consisting of —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —CO(CH2)mCH3, -halogen, —CN and —NO2; R7 and R8 may together form a ring; R8 and R9 may together form a ring; R9 and R10 may together form a ring; R11 and R12 may together form a ring; R12 and R13 may together form a ring; and R13 and R14 may together form a ring.Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

    NOR and NAND Memory Arrangement of Resistive Memory Elements
    4.
    发明申请
    NOR and NAND Memory Arrangement of Resistive Memory Elements 有权
    NOR和NAND内存排列的电阻式存储元件

    公开(公告)号：US20070242496A1

    公开(公告)日：2007-10-18

    申请号：US11737236

    申请日：2007-04-19

    申请人： Kurt Hoffmann ,  Christine Dehm ,  Recai Sezi ,  Andreas Walter

    发明人： Kurt Hoffmann ,  Christine Dehm ,  Recai Sezi ,  Andreas Walter

    IPC分类号： G11C11/00

    CPC分类号： G11C13/003 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0019 ,  G11C2213/15 ,  G11C2213/75 ,  G11C2213/79

    摘要： A memory arrangement includes: a first line for applying a reference voltage, a second line for applying an operating voltage, and a plurality of resistive memory elements, each element includes a resistive memory cell and a MOS memory cell selection transistor. A NOR memory arrangement is configured with each memory element including the resistive memory cell and selection transistor connected in series with the transistor connected to the first line, and the memory cell connected to the second line. A NAND memory arrangement is configured with a series of resistive memory elements forming a chain with each memory element including the resistive memory cell and selection transistor connected in parallel. The chain is connected to the first line disposed on a side of the memory cells facing the selection transistors and the second line disposed on a side of the memory cells which is remote from the selection transistors.

    摘要翻译： 存储器装置包括：用于施加参考电压的第一线，用于施加工作电压的第二线和多个电阻性存储器元件，每个元件包括电阻存储器单元和MOS存储单元选择晶体管。 NOR存储器配置配置有每个存储器元件，其包括与连接到第一线路的晶体管串联连接的电阻存储器单元和选择晶体管，以及连接到第二线路的存储器单元。 NAND存储器配置配置有一系列形成链的电阻存储元件，每个存储元件包括并联连接的电阻存储单元和选择晶体管。 链条连接到布置在面向选择晶体管的存储单元的一侧上的第一行，而第二行设置在远离选择晶体管的存储单元的一侧。

    Memory cell, method for the production thereof and use of a composition therefor
    5.
    发明授权
    Memory cell, method for the production thereof and use of a composition therefor 有权
    记忆单元，其制造方法和其组合物的使用

    公开(公告)号：US07238964B2

    公开(公告)日：2007-07-03

    申请号：US11044762

    申请日：2005-01-27

    申请人： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    发明人： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L33/00

    CPC分类号： H01L51/0595 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L27/285 ,  H01L51/0051

    摘要： A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer. A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.

    摘要翻译： 提供了一种存储单元，其包括两个电极和布置在其间并包含活性材料的层，所述活性材料包含（a）选自下组的化合物：其中R 1和R 2， 可以具有以下含义：-H， - 烷基， - 芳基， - 杂芳基，-O-烷基，-O-芳基， - O-杂芳基，-SH - ， - S-烷基， -S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 其中R 1和R 2，R 2和R 3， R 3和R 4一起可以形成环，（b）通式II的化合物：其中R 5至R 可以具有如下含义：-H， - 烷基， - 芳基， - 杂芳基， - - - 烷基，-O-芳基， - O-杂芳基， N（烷基）2，-N（芳基）2 N，-N（杂芳基）2， -SH，-S-烷基，-S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基 ，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 2，其中R 5 和R 6或R 7和R 8一起可以形成环，和任选地（c）聚合物。 此外还提供了用于生产根据本发明的电池的方法和可用作存储器电池的活性材料的组合物的新用途。

    Photolithographic pattern generation
    9.
    发明授权
    Photolithographic pattern generation 失效
    光刻图案生成

    公开(公告)号：US5851733A

    公开(公告)日：1998-12-22

    申请号：US793310

    申请日：1997-03-12

    申请人： Recai Sezi ,  Rainer Leuschner ,  Erwin Schmidt

    发明人： Recai Sezi ,  Rainer Leuschner ,  Erwin Schmidt

    IPC分类号： G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  G03F7/033 ,  G03F7/039 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  B03C5/00

    CPC分类号： G03F7/265 ,  G03F7/0226 ,  G03F7/0233 ,  Y10S430/12

    摘要： In a method for producing photolithographic patterns in the submicron range, applied on a substrate is a photoresist layer comprised of a polymer containing carboxylic acid anhydride groups and tert. butylester or tert. butoxy-carbonyloxy groups, a photoactive component--in the form of an ester of a naphthoquinonediazide-4-sulfonic acid with an aromatic or aliphatic-aromatic hydroxy compound--and a suitable solvent; the photoresist layer is then dried, exposed in an imaging manner, and subjected to a temperature treatment in the range of between 120.degree. and 150.degree. C. for a duration of 100 to 600 seconds. The photoresist layer is then subjected to a liquid silylation and is dry-developed in an anisotropic oxygen plasma.

    摘要翻译： PCT No.PCT / DE95 / 01184 Sec。 371日期1997年3月12日 102（e）1997年3月12日PCT PCT 1995年9月1日PCT公布。 出版物WO96 / 08750 日期1996年3月21日在用于制造亚微米范围内的光刻图案的方法中，施加在基底上的是由包含羧酸酐基团和叔碳酸酯的聚合物组成的光致抗蚀剂层。 丁酯或叔丁酯。 萘醌二叠氮-4-磺酸与芳族或脂族 - 芳族羟基化合物的酯形式的光活性组分和合适的溶剂; 然后将光致抗蚀剂层干燥，以成像方式曝光，并在120至150℃的温度范围内进行100至600秒的持续时间。 然后将光致抗蚀剂层进行液体甲硅烷基化，并在各向异性氧等离子体中干燥显影。