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50 条记录 (耗时 0.022 秒)

    Vertical magnetic recording medium with an intermetallic compound nucleating layer
    24.
    发明授权
    Vertical magnetic recording medium with an intermetallic compound nucleating layer 失效
    具有金属间化合物成核层的垂直磁记录介质

    公开(公告)号：US4657824A

    公开(公告)日：1987-04-14

    申请号：US791963

    申请日：1985-10-28

    申请人： James K. Howard

    发明人： James K. Howard

    IPC分类号： G11B5/66 ,  G11B5/64 ,  G11B5/65 ,  G11B5/73 ,  G11B5/738

    CPC分类号： G11B5/7325 ,  G11B5/64 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12812 ,  Y10T428/12854 ,  Y10T428/12931

    摘要： A vertical magnetic recording media has a ternary alloy magnetic layer deposited on an intermetallic compound nucleating layer. In one example the intermetallic phase of cobalt and tungsten, which occurs at a discrete stoichiometric ratio of 3 to 1, i.e. Co.sub.3 W, forms a nucleating layer deposited on the media substrate. A magntic layer of (CoCr).sub.90 W.sub.10 is formed on the nucleating layer. Both the nucleating layer and the magnetic layer have a hexagonal crystalline structure with hexagonal cell constants which are related by an integral multiple. The film structure has minimal C-axis dispersion and an excellent ratio of perpendicular to horizontal coercivities.

    摘要翻译： 垂直磁记录介质具有沉积在金属间化合物成核层上的三元合金磁性层。 在一个实例中，钴和钨的金属间化合物相以3:1的离散化学计量比即Co 3 W发生，形成沉积在介质基底上的成核层。 在成核层上形成（CoCr）90W10的腐蚀层。 成核层和磁性层均具有六方晶系结构，六方晶格常数与整数倍相关。 膜结构具有最小的C轴分散性和垂直于水平矫顽力的优异比例。

    Laser annealed dielectric for dual dielectric capacitor
    25.
    发明授权
    Laser annealed dielectric for dual dielectric capacitor 失效
    用于双介质电容器的激光退火电介质

    公开(公告)号：US4437139A

    公开(公告)日：1984-03-13

    申请号：US450629

    申请日：1982-12-17

    申请人： James K. Howard

    发明人： James K. Howard

    IPC分类号： H01G4/33 ,  H01G4/10 ,  H01G4/20 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L29/92 ,  H01G3/075 ,  H01G7/00 ,  H01L21/26

    CPC分类号： H01L27/11502 ,  H01G4/20 ,  H01L28/40 ,  Y10T29/435

    摘要： A thin film capacitor having a high dielectric constant and low leakage current includes a dual dielectric structure. The dual dielectric comprises a leakage current blocking first dielectric layer and a high dielectric constant second dielectric layer. The high dielectric constant second dielectric layer is formed by laser annealing a ferroelectric forming titanate or zirconate into a ferroelectric. A leakage current blocking first dielectric layer may also serve as an antireflective coating for the titanate or zirconate layer so that better coupling of the laser energy to the titanate or zirconate layer is obtained.

    摘要翻译： 具有高介电常数和低漏电流的薄膜电容器包括双电介质结构。 双电介质包括泄漏电流阻挡第一介电层和高介电常数第二介电层。 高介电常数第二电介质层通过将铁电形成钛酸盐或锆酸盐激光退火成铁电体而形成。 泄漏电流阻挡第一介电层也可以用作钛酸盐或锆酸盐层的抗反射涂层，从而获得激光能量与钛酸盐或锆酸盐层的更好的耦合。

    Intermetallic aluminum-transition metal compound Schottky contact
    27.
    发明授权
    Intermetallic aluminum-transition metal compound Schottky contact 失效
    金属间铝过渡金属化合物肖特基接触

    公开(公告)号：US4141020A

    公开(公告)日：1979-02-20

    申请号：US755272

    申请日：1976-12-29

    申请人： James K. Howard ,  William D. Rosenberg ,  James F. White

    发明人： James K. Howard ,  William D. Rosenberg ,  James F. White

    IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L29/47 ,  H01L29/872 ,  H01L29/48

    CPC分类号： H01L29/47 ,  H01L21/28537

    摘要： An aluminum-transition metal Schottky barrier contact, and methods of fabrication thereof are disclosed. In one preferred embodiment, the junction is comprised of an aluminum-tantalum intermetallic layer abutting a silicon substrate. Alternate embodiments utilize an intermetallic compound of a metal selected from the group of tantalum, zirconium, hafnium, niobium, titanium and nickel in combination with aluminum. The preferred embodiments can be fabricated by evaporation of a layer of a metal selected from the above mentioned group followed by evaporation of a layer of aluminum on a silicon substrate, after which an annealing step is utilized which creates the desired intermetallic compound in a layer abutting the silicon surface. Alternatively, the junction can be created by hot or cold sputtering of a preselected intermetallic compound of one of the metals with aluminum directly upon the silicon substrate, followed by deposition of a conductive layer such as aluminum. In the case of cold sputtering an annealing step is required to perfect the desired intermetallic compound structure; and in the case of hot sputtering an annealing step may be useful in perfecting the desired intermetallic structure, although it is not essential. The resulting devices are highly thermally stable with predictable barrier heights; and exhibit excellent electrical properties while they are capable of fabrication with good planarity.

    摘要翻译： 公开了铝 - 过渡金属肖特基势垒接触及其制造方法。 在一个优选实施例中，接合部包括邻接硅衬底的铝 - 钽金属间化合物层。 替代实施例使用选自钽，锆，铪，铌，钛和镍的金属的金属间化合物与铝的组合。 优选的实施方案可以通过蒸发选自上述组的金属层，然后在硅衬底上蒸发一层铝制成，之后利用退火步骤，其形成邻接的层中所需的金属间化合物 硅表面。 或者，可以通过在硅衬底上直接将铝中一种金属的预选金属间化合物用铝直接溅射，然后沉积诸如铝的导电层来产生结。 在冷溅射的情况下，需要退火步骤来完善所需的金属间化合物结构; 并且在热溅射的情况下，退火步骤可用于完善所需的金属间结构，尽管不是必需的。 所得到的器件具有高度的热稳定性和可预测的阻挡高度; 并且具有优异的电性能，同时它们能够以良好的平面度制造。

    Getter layer lead structure for eliminating resistance increase phonomena and embrittlement and method for making the same
    29.
    发明授权
    Getter layer lead structure for eliminating resistance increase phonomena and embrittlement and method for making the same 失效
    吸收层铅结构，用于消除电阻增加现象和脆化及其制造方法

    公开(公告)号：US5680282A

    公开(公告)日：1997-10-21

    申请号：US738973

    申请日：1996-10-24

    申请人： Richard H. Alhert ,  James K. Howard ,  Michael A. Parker

    发明人： Richard H. Alhert ,  James K. Howard ,  Michael A. Parker

    IPC分类号： G11B5/00 ,  G11B5/39 ,  G11B5/40

    CPC分类号： G11B5/3903 ,  G11B5/00 ,  G11B5/40

    摘要： A thin film lead structure resistant to resistance increase phenomenon resulting from contamination by mobile impurities. A thin film lead is disposed proximate to a getter layer material having a higher affinity for mobile impurities that the thin film lead. The getter layer material captures mobile impurities and prevents their migration into the thin film lead. The getter layer material may be formed over and in contact with the thin film lead, may be encapsulated within the thin film lead, or both. The getter layer material comprises a rare earth metal selected from the group consisting of yttrium, scandium, lanthanum, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, erbium, and ytterbium. The thin film lead is preferably tantalum, but may be selected from the group consisting of niobium, vanadium, chromium, molybdenum, tungsten and iron. An alternate embodiment of the invention includes a transition metal comprising titanium, zirconium, or hafnium as the getter layer. The capture of mobile impurities by the getter layer prevents resistance increase phenomenon and embrittlement to the thin film lead. The thin film lead may be used as a thin film lead to an electrical circuit, the sensor structure in a magnetic head.

    摘要翻译： 一种薄膜引线结构，抵抗由移动杂质污染导致的电阻增加现象。 薄膜引线靠近吸附剂层材料设置，该吸气剂层材料对薄膜引线的移动杂质具有更高的亲和力。 吸气层材料捕获移动杂质并防止其迁移到薄膜引线中。 吸气剂层材料可以形成在薄膜引线之上并与薄膜引线接触，可以封装在薄膜引线内，或两者都被封装。 吸气剂层材料包括选自钇，钪，镧，铈，镨，钕，钐，钆，铽，镝，钬，铒和镱的稀土金属。 薄膜引线优选为钽，但可以选自铌，钒，铬，钼，钨和铁。 本发明的替代实施方案包括包含钛，锆或铪作为吸气剂层的过渡金属。 通过吸气层捕获移动杂质防止了电阻增加现象和薄膜引线的脆化。 薄膜引线可用作薄膜引线到电路，传感器结构在磁头中。

    Multilayer magnetoresistive sensor
    30.
    发明授权
    Multilayer magnetoresistive sensor 失效
    多层磁阻传感器

    公开(公告)号：US5452163A

    公开(公告)日：1995-09-19

    申请号：US173590

    申请日：1993-12-23

    申请人： Kevin R. Coffey ,  Robert E. Fontana ,  James K. Howard ,  Todd L. Hylton ,  Michael A. Parker ,  Ching H. Tsang

    发明人： Kevin R. Coffey ,  Robert E. Fontana ,  James K. Howard ,  Todd L. Hylton ,  Michael A. Parker ,  Ching H. Tsang

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/10

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01L43/10 ,  G11B2005/3996

    摘要： A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.

    摘要翻译： 磁阻读取传感器包括由平面阵列中的一个或多个磁阻元件形成的多层感测元件，每个磁阻元件具有由非磁性层隔开的至少两个铁磁层的多层结构。 铁磁层通过在铁磁层的相对边缘处的静磁耦合而反铁磁耦合。 通过间隔层与磁阻感测元件分离的偏置层提供磁场以将磁阻感测元件偏置在期望的非信号点以进行线性响应。 磁阻感测元件通过在衬底上交替地沉积铁磁材料层和非磁性材料层而形成，然后使用光刻技术对所得结构进行构图以提供磁阻元件的平面阵列。 导电层沉积在填充在分离磁阻元件的空间中的阵列上，以提供结构平面中的元件之间的导电性。