-
公开(公告)号：US08540843B2
公开(公告)日：2013-09-24
申请号：US12861769
申请日：2010-08-23
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/465 , C03C15/00 , C03C17/001 , H01J37/321 , H01J37/32522 , H01L21/4763 , H01L21/67109
摘要： A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate. The plasma processing system also includes a cover covering at least the induction coil and a heating and cooling system. The top piece coupled to the bottom piece and at least partially covered by the cover, the top piece comprising a first shelf, a second shelf, and a wall; the wall being disposed between the first shelf and the second shelf; a cavity being formed between the first shelf and the second shelf, and between the wall and a portion of the cover; the heating and cooling system being disposed inside the cavity; Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the top piece, and the top piece substantially complies with a set of SEMI ergonomic safety standards for a part handled by a single person.
摘要翻译： 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件，其包括配置为保持基板的卡盘。 等离子体处理系统还包括被配置为产生电磁场的感应线圈，以便产生用于处理衬底的等离子体。 等离子体处理系统还包括至少覆盖感应线圈和加热和冷却系统的盖。 所述顶部件联接到所述底部件并且至少部分地被所述盖子覆盖，所述顶部件包括第一搁板，第二搁板和壁; 所述壁布置在所述第一搁架和所述第二搁架之间; 在所述第一搁板和所述第二搁板之间以及所述壁与所述盖的一部分之间形成空腔; 所述加热和冷却系统设置在所述空腔内; 其中，加热和冷却系统通过顶部件基本上与电磁场屏蔽，并且顶部件基本上符合由单个人处理的部件的一组SEMI符合人体工程学的安全标准。
-
公开(公告)号：US20130072035A1
公开(公告)日：2013-03-21
申请号：US13238396
申请日：2011-09-21
CPC分类号： F25B21/04 , H01L21/0201 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L35/34 , Y10T29/49083 , Y10T29/49165
摘要： A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
摘要翻译： 一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。 每个平面热区使用至少一个珀耳帖装置作为热电元件。 其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。 用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。
-
23.发明申请公开(公告)号：US20130068750A1
公开(公告)日：2013-03-21
申请号：US13237444
申请日：2011-09-20
IPC分类号： H05B3/68
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/6831
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译： 一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。 每个平面加热器区域使用至少一个二极管作为加热器元件。 其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。 制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片粘合在一起。
-
公开(公告)号：US07854820B2
公开(公告)日：2010-12-21
申请号：US11639264
申请日：2006-12-15
申请人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
发明人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译： 等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。 为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。 由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。 剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。
-
公开(公告)号：US20090091341A1
公开(公告)日：2009-04-09
申请号：US12240329
申请日：2008-09-29
申请人： Jaehyun Kim , Arthur H. Sato , Keith Comendant , Qing Liu , Feiyang Wu
发明人： Jaehyun Kim , Arthur H. Sato , Keith Comendant , Qing Liu , Feiyang Wu
CPC分类号： G01N27/04 , G01R27/2623 , Y10T29/49117
摘要： A plate of substantially uniform thickness is formed from an electrically conductive material. The plate has a top surface defined to support a part to be measured. The plate has a bottom surface defined to be connected to a radiofrequency (RF) transmission rod such that RF power can be transmitted through the RF transmission rod to the plate. The plate is defined to have a number of holes cut vertically through the plate at a corresponding number of locations that underlie embedded conductive material items in the part to be measured when the part is positioned on the top surface of the plate.
摘要翻译： 由导电材料形成厚度基本均匀的板。 该板具有限定为支撑要测量的部分的顶表面。 该板具有限定为连接到射频（RF）传输杆的底表面，使得RF功率可以通过RF传输杆传递到板。 板被限定为当该部件位于板的顶表面上时，在相应数量的位置处垂直地切割许多孔，该位置位于待测量部件中的被测量部件中的嵌入的导电材料物品的位置。
-
公开(公告)号：US20080099120A1
公开(公告)日：2008-05-01
申请号：US11701507
申请日：2007-02-02
申请人： Dean J. Larson , Daniel Brown , Keith Comendant , Victor Wang
发明人： Dean J. Larson , Daniel Brown , Keith Comendant , Victor Wang
IPC分类号： B31B1/60
CPC分类号： H01J37/3255 , H01J37/32009 , H01J37/32568 , Y10T29/49002
摘要： An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.
摘要翻译： 一种电极组件和使外环围绕用于半导体衬底处理的等离子体反应室中的电极组件对中的方法。 该方法包括将外环围绕电极组件的背衬构件的外表面定位，并且在外环和背衬构件之间插入至少一个定心元件。 定心元件可以是容纳在背衬构件的外表面上的空腔中的多个弹簧加载的定心元件，定心元件具有适于接触外圈的第一端和适于容纳弹簧的第二端。 外环围绕背衬构件的外表面，使得多个弹簧加载的定心元件位于背衬构件的外表面和外环的内表面之间。
-
公开(公告)号：US08709202B2
公开(公告)日：2014-04-29
申请号：US12967750
申请日：2010-12-14
申请人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
发明人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译： 等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。 为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。 由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。 剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。
-
28.发明授权公开(公告)号：US08624168B2
公开(公告)日：2014-01-07
申请号：US13237444
申请日：2011-09-20
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/6831
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译： 一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。 每个平面加热器区域使用至少一个二极管作为加热器元件。 其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。 制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。
-
公开(公告)号：US20130306239A1
公开(公告)日：2013-11-21
申请号：US13950040
申请日：2013-07-24
IPC分类号： H01L21/465 , C03C15/00 , C03C17/00 , H01L21/4763
CPC分类号： H01L21/465 , C03C15/00 , C03C17/001 , H01J37/321 , H01J37/32522 , H01L21/4763 , H01L21/67109
摘要： A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.
摘要翻译： 描述了一种用于处理衬底的等离子体处理系统。 等离子体处理系统包括底部件，其包括配置为保持基板的卡盘。 等离子体处理系统还包括被配置为产生电磁场以产生用于处理衬底的等离子体的感应线圈; 以及联接到所述底部件的优化的顶部件，所述顶部件还构造成用于加热和冷却系统。 其中，加热和冷却系统通过优化的顶部部件基本上与电磁场屏蔽，并且优化的顶部部件可以基本上由单个人操作。
-
公开(公告)号：US08461674B2
公开(公告)日：2013-06-11
申请号：US13238396
申请日：2011-09-21
CPC分类号： F25B21/04 , H01L21/0201 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L35/34 , Y10T29/49083 , Y10T29/49165
摘要： A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
摘要翻译： 一种用于半导体等离子体处理装置中的衬底支撑组件的热板，包括以可伸缩复用布局布置的多个可独立控制的平面热区，以及用于独立地控制和供电平面加热器区的电子装置。 每个平面热区使用至少一个珀耳帖装置作为热电元件。 其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。 用于制造热板的方法包括将具有平面热区域，正，负和公共线路和通孔的陶瓷或聚合物片材结合在一起。
-
-
-
-
-
-
-
-
-
搜索结果
54 条记录 (耗时 0.018 秒)
