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公开(公告)号：US07118783B2
公开(公告)日：2006-10-10
申请号：US10183250
申请日：2002-06-26
IPC分类号： C23C16/02
CPC分类号： C23C16/4481
摘要： CVD, ALD, and other vapor processes used in processing semiconductor workpieces often require volatilizing a liquid or solid precursor. Certain embodiments of the invention provide improved and/or more consistent volatilization rates by moving a reaction vessel. In one exemplary embodiment, a reaction vessel is rotated about a rotation axis which is disposed at an angle with respect to vertical. This deposits a quantity of the reaction precursor on an interior surface of the vessel's sidewall which is exposed to the headspace as the vessel rotates. Other embodiments employ drivers adapted to move the reaction vessel in other manners, such as a pendulum arm to oscillate the vessel along an arcuate path or a mechanical linkage which moves the vessel along an elliptical path.
摘要翻译： 用于处理半导体工件中的CVD，ALD和其它蒸气方法通常需要挥发液体或固体前体。 本发明的某些实施方案通过移动反应容器提供改进的和/或更一致的挥发速率。 在一个示例性实施例中，反应容器围绕相对于垂直方向以一定角度设置的旋转轴线旋转。 这将一定数量的反应前体沉积在容器侧壁的内表面上，该容器的侧壁在容器旋转时暴露于顶部空间。 其他实施例使用适于以其他方式移动反应容器的驱动器，例如摆臂，以沿着沿着椭圆形路径移动容器的弓形路径或机械连杆摆动容器。
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22.发明授权公开(公告)号：US07387685B2
公开(公告)日：2008-06-17
申请号：US10933604
申请日：2004-09-02
申请人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
发明人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
IPC分类号： C23C16/455 , C23C16/00 , H01L21/3065
CPC分类号： C23C16/45544 , C23C16/45565
摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.
摘要翻译： 用于将材料气相沉积到微电子工件上的反应器，包括这种反应器的系统以及将材料沉积到微电子工件上的方法。 在一个实施方案中，用于气相沉积材料的反应器包括反应室和气体分配器。 反应室可以包括入口和出口。 气体分配器位于反应室中。 气体分配器具有联接到入口以接收气流的隔室和分布板，分配器板包括面向隔室的第一表面，面对反应室的第二表面和多个通道。 通道从第一表面延伸穿过分配器板到第二表面。 此外，至少一个通道具有穿过板的至少一部分闭塞的流动路径。 例如，封闭通道可以相对于分配器板的第一表面倾斜地倾斜，使得流过倾斜通道的气体在通过分配器板时改变方向。
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公开(公告)号：US07311947B2
公开(公告)日：2007-12-25
申请号：US10683806
申请日：2003-10-10
IPC分类号： C23C14/28
CPC分类号： H01L21/02271 , C23C16/45523 , C23C16/483 , H01L21/0228 , H01L21/3141 , H01L29/78
摘要： A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor.
摘要翻译： 在衬底上形成膜的方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以在衬底上形成材料。
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公开(公告)号：US07270715B2
公开(公告)日：2007-09-18
申请号：US10695726
申请日：2003-10-28
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/54 , Y10S156/914 , Y10S414/139
摘要： A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.
摘要翻译： 化学气相沉积设备包括低于大气压的基底传送室。 至少部分地由室侧壁限定低于大气压的沉积室。 腔室侧壁中的通道从传送室延伸到沉积室。 半导体衬底通过用于沉积处理的通道进入和离开沉积室。 机械闸门包括在沉积室和侧壁通道中的至少一个中，并且构造成打开和关闭至腔室的通道的至少一部分。 化学气相沉积设备的腔室衬垫设备在室内形成沉积子室。 腔室衬套装置的至少一部分选择性地可移动以完全暴露并完全覆盖到腔室的通道。
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公开(公告)号：US06936547B2
公开(公告)日：2005-08-30
申请号：US10284681
申请日：2002-10-31
申请人： Weimin Li , Neal R. Rueger , Li Li , Ross S. Dando , Kevin T. Hamer , Allen P. Mardian
发明人： Weimin Li , Neal R. Rueger , Li Li , Ross S. Dando , Kevin T. Hamer , Allen P. Mardian
IPC分类号： C23C16/44 , C23C16/455 , C23C16/507 , H01L21/31
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/507
摘要： The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.
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公开(公告)号：US06814813B2
公开(公告)日：2004-11-09
申请号：US10132767
申请日：2002-04-24
IPC分类号： C23C1600
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/54 , Y10S156/914 , Y10S414/139
摘要： A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.
摘要翻译： 化学气相沉积设备包括低于大气压的基底传送室。 至少部分地由室侧壁限定低于大气压的沉积室。 腔室侧壁中的通道从传送室延伸到沉积室。 半导体衬底通过用于沉积处理的通道进入和离开沉积室。 机械闸门包括在沉积室和侧壁通道中的至少一个中，并且构造成打开和关闭至腔室的通道的至少一部分。 化学气相沉积设备的腔室衬垫设备在室内形成沉积子室。 腔室衬套装置的至少一部分选择性地可移动以完全暴露并完全覆盖到腔室的通道。
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公开(公告)号：US07044997B2
公开(公告)日：2006-05-16
申请号：US10669755
申请日：2003-09-24
CPC分类号： C23C16/4412 , B01D5/0006 , B01D53/002 , B01D53/68 , B01D2251/2062 , B01D2258/0216 , Y10S55/15
摘要： A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed within the trap device, may influence the formation of deposits within the trap device, or may cause a precipitate to form. Deposit interaction elements may be employed to influence the distribution or redistribution of deposits within the trap device. Deposit interaction elements may effect thermal conditions, introduce substances, or physically interact with deposits within the trap device. Further, a storage region within the trap device may be used to accumulate deposits. In one embodiment, a substantially continuous path through the trap device may be maintained or preserved so that deposits form within the trap device except substantially along the path. The present invention also encompasses a method of operation of a trap device as well as a system incorporating same.
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公开(公告)号：US07229666B2
公开(公告)日：2007-06-12
申请号：US10912878
申请日：2004-08-06
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/45519
摘要： Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned within the chamber and a process gas is provided over the substrate effective to deposit material onto the substrate. While providing the process gas, a purge gas is emitted into the chamber from a plurality of purge gas inlets comprised by at least one chamber wall surface. The purge gas inlets are separate from the at least one process chemical inlet and the emitting forms an inert gas curtain over the chamber wall surface.
摘要翻译： 化学气相沉积的方法包括提供至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。 包括沉积室的至少一个工艺化学品入口。 衬底定位在腔室内，并且在衬底上方设置有效地将材料沉积到衬底上的工艺气体。 在提供工艺气体的同时，净化气体从由至少一个室壁表面包括的多个吹扫气体入口排出到室中。 吹扫气体入口与至少一个过程化学品入口分离，并且所述排放物在室壁表面上形成惰性气体窗帘。
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公开(公告)号：US07329292B2
公开(公告)日：2008-02-12
申请号：US11259490
申请日：2005-10-25
IPC分类号： B01D41/00
CPC分类号： C23C16/4412 , B01D5/0006 , B01D53/002 , B01D53/68 , B01D2251/2062 , B01D2258/0216 , Y10S55/15
摘要： A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed within the trap device, may influence the formation of deposits within the trap device, or may cause a precipitate to form. Deposit interaction elements may be employed to influence the distribution or redistribution of deposits within the trap device. Deposit interaction elements may effect thermal conditions, introduce substances, or physically interact with deposits within the trap device. Further, a storage region within the trap device may be used to accumulate deposits. In one embodiment, a substantially continuous path through the trap device may be maintained or preserved so that deposits form within the trap device except substantially along the path. The present invention also encompasses a method of operation of a trap device as well as a system incorporating same.
摘要翻译： 公开了一种捕集装置，其包括用于将物质引入其中的至少一种物质递送元件。 所运送的物质可能影响在捕集装置内形成的沉积物的性质，可能影响捕集装置内沉积物的形成，或可能导致形成沉淀。 可以使用沉积相互作用元件来影响捕集装置内的沉积物的分布或再分布。 沉积相互作用元件可以影响热条件，引入物质，或与陷阱装置内的沉积物物理相互作用。 此外，捕集装置内的存储区域可以用于积累沉积物。 在一个实施例中，可以维持或保持通过捕集装置的基本上连续的路径，使得沉积物形成在捕集装置内，除了基本上沿着路径。 本发明还包括捕获装置的操作方法以及结合其的系统。
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公开(公告)号：US07255128B2
公开(公告)日：2007-08-14
申请号：US11456055
申请日：2006-07-06
CPC分类号： G01F1/40 , G01F1/42 , G01P13/0006 , G01P13/0013 , G01P13/0033 , G05D7/0635 , Y10T29/41 , Y10T137/0396 , Y10T137/7722 , Y10T137/775 , Y10T137/8242
摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.
摘要翻译： 提供了用于检测质量流量控制器（MFC）中的流量的系统和方法。 MFC中的门的位置被感测或以其他方式确定以监视通过MFC的流动并立即或几乎立即检测到流动故障。 在本发明的一个实施例中，提供了一种新颖的MFC。 MFC包括孔口，质量流量控制门，致动器和门位置传感器。 致动器移动控制门以控制通过孔口的流动。 门位置传感器确定门位置和/或门移动以监视流量并立即或几乎立即检测到流动故障。 根据本发明的一个实施例，门位置传感器包括用于发送信号的发射机和用于接收信号的接收机，使得接收机基于所接收的信号提供门的位置的指示。 这里描述了门位置传感器的其他实施例，以及在半导体制造过程中并入新颖的MFC的系统和方法。
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