公开(公告)号：US07114404B2

公开(公告)日：2006-10-03

申请号：US10674963

申请日：2003-09-29

申请人： Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

发明人： Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

IPC分类号： F17D3/00 ,  F16K37/00 ,  H01L21/02 ,  H01L21/66

CPC分类号： G01F1/40 ,  G01F1/42 ,  G01P13/0006 ,  G01P13/0013 ,  G01P13/0033 ,  G05D7/0635 ,  Y10T29/41 ,  Y10T137/0396 ,  Y10T137/7722 ,  Y10T137/775 ,  Y10T137/8242

摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

公开(公告)号：US06627465B2

公开(公告)日：2003-09-30

申请号：US09945161

申请日：2001-08-30

申请人： Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

发明人： Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

IPC分类号： H01L2166

CPC分类号： G01F1/40 ,  G01F1/42 ,  G01P13/0006 ,  G01P13/0013 ,  G01P13/0033 ,  G05D7/0635 ,  Y10T29/41 ,  Y10T137/0396 ,  Y10T137/7722 ,  Y10T137/775 ,  Y10T137/8242

摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

摘要翻译： 提供了用于检测质量流量控制器（MFC）中的流量的系统和方法。 MFC中的门的位置被感测或以其他方式确定以监视通过MFC的流动并立即或几乎立即检测到流动故障。 在本发明的一个实施例中，提供了一种新颖的MFC。 MFC包括孔口，质量流量控制门，致动器和门位置传感器。 致动器移动控制门以控制通过孔口的流动。 门位置传感器确定门位置和/或门移动以监视流量并立即或几乎立即检测到流动故障。 根据本发明的一个实施例，门位置传感器包括用于发送信号的发射机和用于接收信号的接收机，使得接收机基于所接收的信号提供门的位置的指示。 这里描述了门位置传感器的其他实施例，以及在半导体制造过程中并入新颖的MFC的系统和方法。

公开(公告)号：US07255128B2

公开(公告)日：2007-08-14

申请号：US11456055

申请日：2006-07-06

申请人： Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

发明人： Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

IPC分类号： H01L21/66 ,  F17D3/00 ,  F16K37/00 ,  G01B7/00

CPC分类号： G01F1/40 ,  G01F1/42 ,  G01P13/0006 ,  G01P13/0013 ,  G01P13/0033 ,  G05D7/0635 ,  Y10T29/41 ,  Y10T137/0396 ,  Y10T137/7722 ,  Y10T137/775 ,  Y10T137/8242

摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

摘要翻译： 提供了用于检测质量流量控制器（MFC）中的流量的系统和方法。 MFC中的门的位置被感测或以其他方式确定以监视通过MFC的流动并立即或几乎立即检测到流动故障。 在本发明的一个实施例中，提供了一种新颖的MFC。 MFC包括孔口，质量流量控制门，致动器和门位置传感器。 致动器移动控制门以控制通过孔口的流动。 门位置传感器确定门位置和/或门移动以监视流量并立即或几乎立即检测到流动故障。 根据本发明的一个实施例，门位置传感器包括用于发送信号的发射机和用于接收信号的接收机，使得接收机基于所接收的信号提供门的位置的指示。 这里描述了门位置传感器的其他实施例，以及在半导体制造过程中并入新颖的MFC的系统和方法。

公开(公告)号：US06255209B1

公开(公告)日：2001-07-03

申请号：US09376023

申请日：1999-08-19

申请人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

发明人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  C23C16/02 ,  C23C16/0236 ,  C23C16/42 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76855

摘要： Methods are provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). The methods include forming titanium in the contact. One method includes forming titanium by combining a titanium precursor in the presence of hydrogen, H2. Another method includes forming titanium by combining titanium tetrachloride, TiCl4, in the presence of hydrogen. A further method includes forming titanium by combining tetradimethyl amino titanium, Ti(N(CH3)2)4, in the presence of hydrogen.

摘要翻译： 提供了通过化学气相沉积（CVD）在集成电路中形成接触的方法。 所述方法包括在接触中形成钛。 一种方法包括通过在氢气存在下将钛前体组合而形成钛。 另一种方法包括在氢的存在下将四氯化钛，TiCl 4组合形成钛。 另一种方法包括在氢的存在下，通过组合四（二甲基氨基）钛，Ti（N（CH 3）2）4形成钛。

公开(公告)号：US06208033B1

公开(公告)日：2001-03-27

申请号：US09377253

申请日：1999-08-19

申请人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

发明人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  C23C16/02 ,  C23C16/0236 ,  C23C16/42 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76855

摘要： Apparatus having titanium silicide and titanium formed by chemical vapor deposition (CVD) in a contact. The chemical vapor deposition includes forming titanium silicide and/or titanium by combining a titanium precursor in the presence of hydrogen, H2. The chemical vapor deposition may further include forming titanium silicide and/or titanium by combining titanium tetrachloride, TiCl4, in the presence of hydrogen. The chemical vapor deposition may further include forming titanium silicide and/or by combining tetradimethyl amino titanium, Ti(N(CH3)2)4, in the presence of hydrogen. For production of titanium silicide, reaction of the titanium precursor may occur with a silicon precursor or a silicon source occurring as part of the contact. Use of a silicon precursor reduces depletion of a silicon base layer in the contact.

摘要翻译： 具有通过化学气相沉积（CVD）在接触中形成的钛硅化物和钛的装置。 化学气相沉积包括通过在氢气存在下将钛前体组合而形成钛硅化物和/或钛。 化学气相沉积还可以包括在氢的存在下通过组合四氯化钛TiCl 4来形成硅化钛和/或钛。 化学气相沉积可以进一步包括在氢的存在下形成硅化钛和/或通过组合四（二甲基氨基）钛（N（CH 3）2）4）。 对于硅化钛的生产，钛前体的反应可以与作为接触部分的硅前体或硅源发生。 硅前体的使用减少了接触中硅基层的耗尽。

公开(公告)号：US06255216B1

公开(公告)日：2001-07-03

申请号：US09377265

申请日：1999-08-19

申请人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

发明人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  C23C16/02 ,  C23C16/0236 ,  C23C16/42 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76855

摘要： Methods arc provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). The methods include forming titanium silicide in the contact. One method includes forming titanium silicide by combining a titanium precursor in the presence of hydrogen, H2. Another method includes forming titanium silicide by combining titanium tetrachloride, TiCl4, in the presence of hydrogen. A further method includes forming titanium silicide by combining tetradimethyl amino titanium, Ti(N(CH3)2)4, in the presence of hydrogen. The methods may further include forming titanium in the contact.

摘要翻译： 提供了通过化学气相沉积（CVD）在集成电路中形成接触的方法。 所述方法包括在接触中形成硅化钛。 一种方法包括通过在氢气存在下将钛前体组合而形成硅化钛。 另一种方法包括在氢气存在下通过组合四氯化钛TiCl 4来形成硅化钛。 另一种方法包括在氢的存在下，通过组合四（二甲基氨基）钛，Ti（N（CH 3）2）4来形成硅化钛。 所述方法还可以包括在接触中形成钛。

公开(公告)号：US5976976A

公开(公告)日：1999-11-02

申请号：US915986

申请日：1997-08-21

申请人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

发明人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/42 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/02 ,  C23C16/0236 ,  C23C16/42 ,  H01L21/28518 ,  H01L21/76855 ,  H01L21/28556

摘要： A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form to form titanium silicide.

摘要翻译： 提供了一种通过化学气相沉积（CVD）在集成电路中形成接触的方法。 在一个实施方案中，在氢的存在下使钛前体和硅前体接触以形成硅化钛。 在另一个实施方案中，钛前体与硅接触以形成硅化钛。

公开(公告)号：US06472756B2

公开(公告)日：2002-10-29

申请号：US09789999

申请日：2001-02-21

申请人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

发明人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  C23C16/02 ,  C23C16/0236 ,  C23C16/42 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76855

摘要： A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form to form titanium silicide.

摘要翻译： 提供了一种通过化学气相沉积（CVD）在集成电路中形成接触的方法。 在一个实施方案中，在氢的存在下使钛前体和硅前体接触以形成硅化钛。 在另一个实施方案中，钛前体与硅接触以形成硅化钛。

公开(公告)号：US06171943B2

公开(公告)日：2001-01-09

申请号：US09377273

申请日：1999-08-19

申请人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

发明人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  C23C16/02 ,  C23C16/0236 ,  C23C16/42 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76855

摘要： A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form to form titanium silicide.

摘要翻译： 提供了一种通过化学气相沉积（CVD）在集成电路中形成接触的方法。 在一个实施方案中，在氢的存在下使钛前体和硅前体接触以形成硅化钛。 在另一个实施方案中，钛前体与硅接触以形成硅化钛。

公开(公告)号：US07229666B2

公开(公告)日：2007-06-12

申请号：US10912878

申请日：2004-08-06

申请人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

发明人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/45519

摘要： Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned within the chamber and a process gas is provided over the substrate effective to deposit material onto the substrate. While providing the process gas, a purge gas is emitted into the chamber from a plurality of purge gas inlets comprised by at least one chamber wall surface. The purge gas inlets are separate from the at least one process chemical inlet and the emitting forms an inert gas curtain over the chamber wall surface.

摘要翻译： 化学气相沉积的方法包括提供至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。 包括沉积室的至少一个工艺化学品入口。 衬底定位在腔室内，并且在衬底上方设置有效地将材料沉积到衬底上的工艺气体。 在提供工艺气体的同时，净化气体从由至少一个室壁表面包括的多个吹扫气体入口排出到室中。 吹扫气体入口与至少一个过程化学品入口分离，并且所述排放物在室壁表面上形成惰性气体窗帘。