Abstract:
A bulk-acoustic wave resonator includes a substrate; a lower electrode, disposed on the substrate, comprising a first inclined surface and a second inclined surface; and an insertion layer disposed on an edge of the lower electrode. The first inclined surface extends from an inclined surface of the insertion layer in a region disposed inside the insertion layer. The second inclined surface extends from the first inclined surface in a region inside a region of the first inclined surface.
Abstract:
A bulk-acoustic wave resonator includes a resonator having a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion and in which an insertion layer is disposed below the piezoelectric layer, wherein the insertion layer includes a SiO2 thin film injected with fluorine (F).
Abstract:
A common mode filter is manufactured to include a coil part including an insulation layer and a conductor pattern formed in the insulation layer; and a magnetic substrate coupled to one surface or both surfaces of the coil part. The magnetic substrate includes: an electrostatic absorbing layer made of an electrostatic absorbing material; a magnetic layer provided on one surface or both surfaces of the electrostatic absorbing layer and made of a magnetic material; and an electrode provided between the magnetic layer and the electrostatic absorbing layer and made of a conductive material. Therefore, common mode filter may maintain high efficiency characteristics while preventing an electrostatic discharge phenomenon.
Abstract:
Disclosed herein are a common mode noise chip filter and a method for preparing thereof, the common mode noise chip filter including: a ferrite substrate; coil patterns formed on the ferrite substrate; and a ferrite-polymer composite layer on the substrate provided with the coil patterns, wherein the ferrite-polymer composite layer includes spherical ferrite particles and flake shaped ferrite particles.
Abstract:
The present invention relates to a method of manufacturing a coil element and a coil element, which include a process of forming, aligning, and coupling a first auxiliary layer and a second auxiliary layer of which coil portions formed of a plating pattern are disposed on a substrate or an insulating layer, and it is possible to overcome limitations due to collapse or deformation of a photoresist pattern even when forming a fine-pitch fine conductor coil with a high aspect ratio by applying a plating method using a photoresist pattern.
Abstract:
A bulk acoustic wave resonator includes a substrate; a central portion including a first portion of a first electrode, a first portion of a piezoelectric layer, and a first portion of a second electrode laminated in order on the substrate; and a reflective region disposed laterally of the central portion and including a second portion of the first electrode, an insertion layer, a second portion of the piezoelectric layer, and a second portion of the second electrode. A side surface of the insertion layer adjacent to the central portion has an inclined surface, the first portion of the second electrode and the second portion of the second electrode are coplanar, and an end of the second electrode overlaps the inclined surface of the insertion layer in the reflective region.
Abstract:
A bulk acoustic resonator includes a substrate, a frequency control layer changing a resonant frequency or antiresonant frequency of the bulk acoustic resonator according to a thickness of the frequency control layer, a piezoelectric layer disposed between the frequency control layer and the substrate, a first electrode disposed between the piezoelectric layer and the substrate, a second electrode disposed between the piezoelectric layer and the frequency control layer, a metal layer connected to the first electrode or the second electrode, and a protective layer disposed between the second electrode and the frequency control layer, wherein the frequency control layer covers a larger area than that of the protective layer.
Abstract:
A bulk-acoustic wave resonator includes a resonator, including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate; and an insertion layer disposed below the piezoelectric layer, and configured to partially elevate the piezoelectric layer and the second electrode, wherein the insertion layer may be formed of a material containing silicon (Si), oxygen (O), and nitrogen (N).
Abstract:
A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; a metal pad connected to the first electrode and the second electrode; and a protective layer disposed to cover at least the metal pad.
Abstract:
An insulator composition includes Al2O3 having a particle size of 120 to 500 nm. The insulator composition has a strength of 400 to 740 MPa and a particle size of 1 μm or less.