公开(公告)号：US20220085791A1

公开(公告)日：2022-03-17

申请号：US17231330

申请日：2021-04-15

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon KIM ,  Won HAN ,  Sang Hyun YI ,  Jae Hyoung GIL ,  Sang Kee YOON ,  Moon Chul LEE

IPC: H03H9/17 ,  H03H9/02

Abstract: A bulk-acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a cavity disposed between the substrate and the first electrode; a piezoelectric layer covering at least a portion of the first electrode; a second electrode covering at least a portion of the piezoelectric layer; an insertion layer disposed between the first electrode and the piezoelectric layer; and a lower frame disposed in the cavity. At least a portion of the lower frame overlaps the insertion layer.

公开(公告)号：US20190356301A1

公开(公告)日：2019-11-21

申请号：US16196453

申请日：2018-11-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sang Kee YOON ,  Nam Soo PARK ,  Hyung Jae PARK ,  Tae Kyung LEE ,  Moon Chul LEE

IPC: H03H9/17 ,  H01L21/3213

Abstract: A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas, wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range from 1.5 to 2.4.

公开(公告)号：US20190013792A1

公开(公告)日：2019-01-10

申请号：US15972694

申请日：2018-05-07

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Sung Sun KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Jin Suk SON ,  Ran Hee SHIN ,  Je Hong KYOUNG

IPC: H03H9/17 ,  H03H9/13 ,  H03H3/02 ,  H01L41/047 ,  H01L41/314 ,  H01L41/29

Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

公开(公告)号：US20180205360A1

公开(公告)日：2018-07-19

申请号：US15812842

申请日：2017-11-14

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won HAN ,  Dae Ho KIM ,  Yong Suk KIM ,  Seung Hun HAN ,  Moon Chul LEE ,  Chang Hyun LIM ,  Sung Jun LEE ,  Sang Kee YOON ,  Tae Yoon KIM ,  Sang Uk SON

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13

CPC classification number: H03H9/02118 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02157 ,  H03H9/132 ,  H03H9/17 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021 ,  H03H2003/023

Abstract: A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.

公开(公告)号：US20180152168A1

公开(公告)日：2018-05-31

申请号：US15789024

申请日：2017-10-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won HAN ,  Chang Hyun LIM ,  Yong Suk KIM ,  Seung Hun HAN ,  Sung Jun LEE ,  Sang Kee YOON ,  Tae Yoon KIM

IPC: H03H9/02 ,  H03H9/17 ,  H01L41/047

CPC classification number: H03H9/02007 ,  H01L41/047 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/02157 ,  H03H9/17 ,  H03H9/173 ,  H03H9/174 ,  H03H9/54

Abstract: A bulk acoustic wave resonator includes a membrane layer, together with a substrate, forming a cavity, a lower electrode disposed on the membrane layer, a piezoelectric layer disposed on a flat surface of the lower electrode and an upper electrode covering a portion of the piezoelectric layer. An overall region at a side of the piezoelectric layer is exposed to the air. The side of the piezoelectric layer has a gradient of 65° to 90° with respect to a top surface of the lower electrode.

公开(公告)号：US20180144866A1

公开(公告)日：2018-05-24

申请号：US15642025

申请日：2017-07-05

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Seung Hun HAN ,  Sung Min CHO ,  Tae Joon PARK ,  Hyun Ho SHIN ,  Sang Kee YOON

IPC: H01G4/232 ,  H01G4/30

CPC classification number: H01G4/232 ,  H01G4/012 ,  H01G4/12 ,  H01G4/1227 ,  H01G4/1236 ,  H01G4/30 ,  H01G4/306 ,  H01G4/33

Abstract: A thin-film ceramic capacitor includes a body, a plurality of dielectric layers and first and second electrode layers alternately disposed on a substrate in the body, first and second electrode pads disposed on an external surface of the body, and a plurality of vias disposed in the body, the plurality of dielectric layers and first and second electrode layers having inclined etched surfaces exposed to the plurality of vias, a first via, of the plurality of vias, being connected to the inclined surface of the first electrode layer, and a second via, of the plurality of vias, being connected to the inclined surface of the second electrode layer.

公开(公告)号：US20180138888A1

公开(公告)日：2018-05-17

申请号：US15789194

申请日：2017-10-20

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Sang Kee YOON ,  Hyung Jae PARK ,  Nam Soo PARK ,  Jong Woon KIM ,  Moon Chul LEE

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/13 ,  H01L41/08 ,  H01L41/29 ,  H01L41/35

CPC classification number: H03H9/17 ,  H01L41/0477 ,  H01L41/081 ,  H01L41/18 ,  H01L41/29 ,  H01L41/35 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/02157 ,  H03H9/13 ,  H03H9/173 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator includes a substrate on which a substrate protective layer is disposed, a membrane layer forming a cavity together with the substrate, and a resonant portion disposed on the membrane layer. The cavity is formed by removing a sacrificial layer using a mixed gas obtained by mixing a halide-based gas and an oxygen gas, and at least one of the membrane layer and the substrate protective layer has a thickness difference of 170 Å or less, after the cavity is formed.

公开(公告)号：US20170317660A1

公开(公告)日：2017-11-02

申请号：US15385448

申请日：2016-12-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Yoon KIM ,  Tae Kyung LEE ,  Moon Chul LEE ,  Sung Min CHO ,  Sang Kee YOON

IPC: H03H9/17 ,  H03H9/54 ,  H03H3/02

CPC classification number: H03H9/17 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic wave resonator may include: an air cavity; an etching stop layer and an etching stop part, which define a lower boundary surface and a side boundary surface of the air cavity; and a resonating part formed on an approximately planar surface, which is formed by a upper boundary surface of the air cavity and a top surface of the etching stop part. A width of a top surface of the etching stop part may be greater than a width of a bottom surface of the etching stop part. A side surface of the etching stop part connecting the top surface of the etching stop part to the bottom surface of the etching stop part may be inclined.

公开(公告)号：US20230350104A1

公开(公告)日：2023-11-02

申请号：US18101396

申请日：2023-01-25

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Sang Kee YOON ,  Jin Woo YI ,  Joung Hun KIM ,  Jae Goon AUM

IPC: G02B1/18 ,  G02B1/11 ,  G02B5/02

CPC classification number: G02B1/18 ,  G02B1/11 ,  G02B5/0221

Abstract: A lens includes a lens unit including an uneven surface structure, and an uneven layer formed on at least a portion of the uneven surface structure of the lens unit and comprising an uneven surface structure. The uneven surface structure of the lens unit and the uneven surface structure of the uneven layer have different shapes.

公开(公告)号：US20230216470A1

公开(公告)日：2023-07-06

申请号：US17824145

申请日：2022-05-25

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Won HAN ,  Hwa Sun LEE ,  Jeong Hoon RYOU ,  Moon Chul LEE ,  Tae Yoon KIM ,  Sang Kee YOON ,  Yong Suk KIM ,  Joung Hun KIM ,  Sung Jun LEE ,  Sung Joon PARK

IPC: H03H9/02 ,  H03H9/17

CPC classification number: H03H9/0211 ,  H03H9/173 ,  H03H9/02102

Abstract: A bulk acoustic wave resonator includes a substrate; a central portion including a first portion of a first electrode, a first portion of a piezoelectric layer, and a first portion of a second electrode laminated in order on the substrate; and a reflective region disposed laterally of the central portion and including a second portion of the first electrode, an insertion layer, a second portion of the piezoelectric layer, and a second portion of the second electrode. A side surface of the insertion layer adjacent to the central portion has an inclined surface, the first portion of the second electrode and the second portion of the second electrode are coplanar, and an end of the second electrode overlaps the inclined surface of the insertion layer in the reflective region.