公开(公告)号：US20250159946A1

公开(公告)日：2025-05-15

申请号：US18811194

申请日：2024-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Baekwon PARK ,  Keunwook SHIN ,  Changhyun KIM ,  Minsu SEOL ,  Joungeun YOO ,  Hyunmi LEE

IPC: H01L29/76 ,  H01L21/02 ,  H01L21/443 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device may include a gate electrode, a metal nitride layer on the gate electrode, a gate insulating film on the metal nitride layer, a channel on the gate insulating film, a source electrode in one side of the channel, and a drain electrode in another side of the channel.

公开(公告)号：US20250142907A1

公开(公告)日：2025-05-01

申请号：US18643087

申请日：2024-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Kyung-Eun BYUN ,  Minsu SEOL ,  Junyoung KWON ,  Huije RYU ,  Eunkyu LEE ,  Yeonchoo CHO

IPC: H01L29/10 ,  H01L29/06

Abstract: A semiconductor device may include a substrate, a vertical channel, a gate electrode, and a conductive layer. The vertical channel may have a tube shape extending in a direction perpendicular to a surface of the substrate. The gate electrode may face the vertical channel with an outer insulating layer therebetween on an outer circumferential surface of the vertical channel. The conductive layer may face the vertical channel with an inner insulating layer therebetween on an inner circumferential surface of the vertical channel.

公开(公告)号：US20250120130A1

公开(公告)日：2025-04-10

申请号：US18823988

申请日：2024-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Changhyun KIM ,  Kyung-Eun BYUN ,  Eunkyu LEE

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a source electrode provided on a substrate, a drain electrode disposed away from the source electrode, and a channel connected between the source electrode and the drain electrode, wherein the channel includes a plurality of first channel layers and plurality of second channel layers, and the gate electrode is provided on one surface and another surface of each of the plurality of the first channel layers and on one surface and another surface of each of the plurality of the second channel layers.

公开(公告)号：US20230343846A1

公开(公告)日：2023-10-26

申请号：US18151775

申请日：2023-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Eunkyu LEE ,  Changseok LEE ,  Changhyun KIM ,  Kyung-Eun BYUN

IPC: H01L29/45

CPC classification number: H01L29/45

Abstract: A semiconductor device may include a first semiconductor layer including a first semiconductor material; a metal layer facing the first semiconductor layer and having conductivity; a 2D material layer between the first semiconductor layer and the metal layer; and a second semiconductor layer between the first semiconductor layer and the 2D material layer. The second semiconductor layer may include a second semiconductor material different from the first semiconductor material. The second semiconductor layer and the 2D material layer may be in direct contact with each other. The second semiconductor material may include germanium.

公开(公告)号：US20230207312A1

公开(公告)日：2023-06-29

申请号：US18179565

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu LEE ,  Kyung-Eun BYUN ,  Hyunjae SONG ,  Hyeonjin SHIN ,  Changhyun KIM ,  Keunwook SHIN ,  Changseok LEE ,  Alum JUNG

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/165

CPC classification number: H01L21/02447 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/165 ,  H01L21/02499 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02381

Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.

公开(公告)号：US20230070355A1

公开(公告)日：2023-03-09

申请号：US17670912

申请日：2022-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Changhyun KIM ,  Kyung-Eun BYUN

IPC: H01L29/49 ,  H01L29/40 ,  H01L21/28

Abstract: Disclosed are a layer structure including a metal layer and a carbon layer, a manufacturing method the layer structure, an electronic device including the layer structure, and an electronic apparatus including the electronic device. The layer structure according to an embodiment includes an insulating layer on one surface of a semiconductor layer, a first metal layer facing the semiconductor layer with the insulating layer therebetween, a conductive first carbon layer arranged between the insulating layer and the first metal layer, the conductive first carbon layer being in contact with a first surface of the first metal layer. The first metal layer may be provided above or below the semiconductor layer. The first carbon layer may include a graphene layer. The first carbon layer may extend to another surface of the first metal layer.

公开(公告)号：US20220330787A1

公开(公告)日：2022-10-20

申请号：US17681566

申请日：2022-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Johannes BÜSING ,  Jongwook KWON ,  Sojeong KIM ,  Changhyun KIM ,  Hyunjoo KIM ,  Woojin SHIN

IPC: A47L15/42 ,  A47L15/48

Abstract: Disclosed herein is a dishwasher. The dishwasher includes, a tub provided in the cabinet to form a washing chamber, and a drying apparatus arranged on a side wall of the tub and including a flow path provided to allow air sucked from the washing chamber to flow, a heater arranged in the flow path to heat air in the flow path, and a switch arranged upstream of the heater to turn off the heater in response to air, which is adjacent to the heater, reaching a predetermined temperature.

公开(公告)号：US20210163296A1

公开(公告)日：2021-06-03

申请号：US17060893

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan NGUYEN ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Changhyun KIM ,  Changseok LEE ,  Yeonchoo CHO

IPC: C01B32/186

Abstract: A method of forming graphene includes: preparing a substrate in a reaction chamber; performing a first growth process of growing a plurality of graphene aggregates apart from each other on the substrate at a first growth rate by using a reaction gas including a carbon source; and performing a second growth process of forming a graphene layer by growing the plurality of graphene aggregates at a second growth rate slower than the first growth rate by using the reaction gas including the carbon source.

公开(公告)号：US20200294928A1

公开(公告)日：2020-09-17

申请号：US16884590

申请日：2020-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Keunwook SHIN ,  Yonghoon KIM ,  Hyeonjin SHIN ,  Hyunjae SONG ,  Changseok LEE ,  Changhyun KIM ,  Yeonchoo CHO

IPC: H01L23/532

Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.

公开(公告)号：US20200217917A1

公开(公告)日：2020-07-09

申请号：US16737219

申请日：2020-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongyoub RYU ,  Geunwoo KIM ,  Changhyun KIM ,  Soohoon LEE ,  Byoungkab CHOI

IPC: G01S3/801 ,  H04M1/03 ,  G01S3/808

Abstract: Provided is an electronic apparatus. The electronic apparatus includes an audio receiver configured to obtain an audio signal of sound output by an external object; a sensor configured to sense a posture of the electronic apparatus; a display; and a processor configured to, based on the audio signal that is obtained by the audio receiver, determine a direction in which the external object is located with respect to the electronic apparatus, and control the display to display a graphical object that corresponds to the external object based on the posture of the electronic apparatus sensed by the sensor and the direction in which the external object is located.