公开(公告)号：US20240164166A1

公开(公告)日：2024-05-16

申请号：US18279925

申请日：2022-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Taisuke KAMADA ,  Akio YAMASHITA ,  Kenichi OKAZAKI ,  Koji KUSUNOKI ,  Tomoaki ATSUMI

IPC: H10K59/35 ,  G09G3/3225 ,  H10K39/34

CPC classification number: H10K59/353 ,  G09G3/3225 ,  H10K39/34 ,  G09G2300/0452 ,  G09G2300/0842 ,  G09G2310/08

Abstract: A semiconductor device having a light detection function and including a high-resolution display portion is provided. The semiconductor device is a display apparatus including a light-emitting device, a light-receiving device, and a substrate. The light-emitting device includes a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode stacked in this order over the substrate. The light-receiving device includes a third electrode, an active layer, a first hole-transport layer, the electron-injection layer, and the second electrode stacked in this order over the substrate. The first electrode is supplied with a first potential. The second electrode is preferably supplied with a second potential lower than the first potential. The third electrode is preferably supplied with a third potential higher than the second potential.

公开(公告)号：US20230400740A1

公开(公告)日：2023-12-14

申请号：US18233953

申请日：2023-08-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Koji KUSUNOKI ,  Susumu KAWASHIMA ,  Daisuke KUBOTA ,  Tetsuji ISHITANI ,  Akio YAMASHITA

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/137 ,  C09K19/38 ,  G02F1/1343 ,  G02F1/1368

CPC classification number: G02F1/13624 ,  G02F1/133357 ,  G02F1/13756 ,  C09K19/3857 ,  G02F1/133345 ,  G02F1/133365 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368

Abstract: A display device with a high aperture ratio is provided. The display device includes, in a pixel, a first transistor, a second transistor, a first insulating layer, a second insulating layer, a conductive layer, a pixel electrode, a layer containing a liquid crystal material, and a common electrode. The first insulating layer is positioned over a channel formation region of the first transistor. The conductive layer is positioned over the first insulating layer. The second insulating layer is positioned over the first transistor, the second transistor, the first insulating layer, and the conductive layer. The pixel electrode is positioned over the second insulating layer, the layer containing a liquid crystal material is positioned over the pixel electrode, and the common electrode is positioned over the layer containing a liquid crystal material. The common electrode overlaps with the conductive layer with the layer containing a liquid crystal material and the pixel electrode therebetween. The pixel includes a first connection portion where the conductive layer is electrically connected to the first transistor and a second connection portion where the pixel electrode is electrically connected to the second transistor. The conductive layer, the pixel electrode, and the common electrode each have a function of transmitting visible light.

公开(公告)号：US20230180491A1

公开(公告)日：2023-06-08

申请号：US17925628

申请日：2021-05-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Taisuke KAMADA ,  Yasuhiro NIIKURA ,  Daisuke KUBOTA ,  Ryo HATSUMI ,  Akio YAMASHITA ,  Sachiko KAWAKAMI ,  Satoshi SEO

IPC: H10K39/34 ,  H10K30/81 ,  H10K50/125 ,  G06F9/30

CPC classification number: H10K39/34 ,  H10K30/81 ,  H10K50/125 ,  G06F9/3001

Abstract: A novel optical functional device that is highly convenient, useful, or reliable is provided. The optical functional device includes a light-emitting function, a photoelectric conversion function, a first electrode, a second electrode, and an optical functional layer. The light-emitting function converts electrical energy into first light, the first light has a first emission spectrum, and the first emission spectrum exhibits a maximum peak at a first wavelength. At a second wavelength, the intensity of the first emission spectrum is 80% of the maximum peak. The photoelectric conversion function has a spectral sensitivity characteristic; at a third wavelength, the spectral sensitivity characteristic has a maximum sensitivity within a range of 420 to 720 nm inclusive; and at a fourth wavelength, the sensitivity of the spectral sensitivity characteristic is 80% of the maximum sensitivity. The third wavelength is positioned closer to the second wavelength than to the first wavelength, and the fourth wavelength is positioned closer to the first wavelength than to the third wavelength.

公开(公告)号：US20220376182A1

公开(公告)日：2022-11-24

申请号：US17727158

申请日：2022-04-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daisuke KUBOTA ,  Taisuke KAMADA ,  Yasuhiro NIIKURA ,  Ryo HATSUMI ,  Akio YAMASHITA ,  Sachiko KAWAKAMI ,  Anna TADA ,  Satoshi SEO

IPC: H01L51/00 ,  H01L51/50 ,  C07D401/04 ,  C07D401/06 ,  C07F7/22 ,  C07F15/00 ,  C07D519/00 ,  C07D209/82 ,  C07D413/10 ,  C07D403/10 ,  C07D405/04 ,  C07D219/16 ,  C07D221/20 ,  C07D307/91 ,  C07D409/10 ,  C07D333/76

Abstract: To provide a novel photoelectric conversion device that is highly convenient, useful, or reliable. The photoelectric conversion device includes a first electrode, a second electrode, and a first unit. The first unit is located between the first electrode and the second electrode. The first unit contains a first electron-donating material and a first electron-accepting material. The first electron-donating material is a condensed aromatic compound, and the first electron-accepting material has a perylene skeleton and two or more alkyl groups. The alkyl groups each independently have 1 to 13 carbon atoms.

公开(公告)号：US20170160573A1

公开(公告)日：2017-06-08

申请号：US15437599

申请日：2017-02-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshiharu HIRAKATA ,  Daisuke KUBOTA ,  Akio YAMASHITA

IPC: G02F1/1333 ,  G02F1/1343 ,  G06F3/044 ,  G06F3/041 ,  G02F1/1368 ,  G02F1/1341

CPC classification number: G02F1/1333 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2001/13415 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2202/10 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a highly reliable liquid crystal display device including flexible substrates and a crystalline oxide semiconductor film for a backplane. The device includes a flexible first substrate, a flexible second substrate facing the first substrate, and a liquid crystal layer sealed between the substrates with a sealing member. The first substrate is provided with a layer including a transistor, an organic resin film over the transistor, a pixel electrode and a common electrode over the organic resin film, which partly overlap with each other with an insulating film provided therebetween, and an alignment film thereover. The transistor includes a crystalline oxide semiconductor film as a semiconductor layer where a channel is formed. Drying treatment is performed on the layer before the liquid crystal layer is sealed between the substrates, and steps from the drying treatment to sealing of the liquid crystal layer are performed without exposure to the air.

公开(公告)号：US20150187984A1

公开(公告)日：2015-07-02

申请号：US14659968

申请日：2015-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akio YAMASHITA ,  Yumiko FUKUMOTO ,  Yuugo GOTO

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L33/005 ,  G02F1/1333 ,  G02F1/133305 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/15 ,  H01L27/322 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/524 ,  H01L51/56 ,  H01L2227/326 ,  H01L2933/0025

Abstract: To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method of manufacturing a display device having an optical film that is formed using a plastic substrate. The method of manufacturing a display device includes the steps of: laminating a metal film, an oxide film, and an optical filter on a first substrate; separating the optical filter from the first substrate; attaching the optical filter to a second substrate; forming a layer including a pixel on a third substrate; and attaching the layer including the pixel to the optical filter.

Abstract translation: 为了提供一种以高产率制造具有优异抗冲击性能的显示装置的方法，特别是制造具有使用塑料基板形成的光学膜的显示装置的方法。 制造显示装置的方法包括以下步骤：在第一基板上层压金属膜，氧化物膜和滤光器; 将所述滤光器与所述第一基板分离; 将所述滤光器附接到第二基板; 在第三基板上形成包括像素的层; 以及将包括像素的层附着到滤光器。