公开(公告)号：US20220091453A1

公开(公告)日：2022-03-24

申请号：US17537958

申请日：2021-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Hideaki KUWABARA ,  Hajime KIMURA

IPC: G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343

Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

公开(公告)号：US20200312891A1

公开(公告)日：2020-10-01

申请号：US16847933

申请日：2020-04-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yuugo GOTO ,  Hideaki KUWABARA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L21/762 ,  H01L27/32 ,  B60R1/00 ,  B60R11/02 ,  B60R11/04 ,  H01L21/683

Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

公开(公告)号：US20200099002A1

公开(公告)日：2020-03-26

申请号：US16698120

申请日：2019-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki KUWABARA

IPC: H01L51/00 ,  G06F3/14 ,  H01L27/32 ,  H01L51/52

Abstract: A power saving system using a plurality of flexible display devices placed on various places is provided. A structure of a bendable portion in a display device is improved. Specifically, a wiring partly including a metal nanoparticle is used. Openings are formed in an insulating layer so that the wiring becomes substantially longer by meandering in cross section. When a plurality of openings are formed and aligned, a portion that is easy to bend is formed along the line where they are aligned. A plurality of display panels are used for one display portion. The flexible display portion can be provided on a surface, specifically, a curved surface of furniture such as a chair or a sofa.

公开(公告)号：US20190265528A1

公开(公告)日：2019-08-29

申请号：US16411594

申请日：2019-05-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Hideaki KUWABARA ,  Hajime KIMURA

IPC: G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  G02F1/1339 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1333 ,  H01L29/04

Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

公开(公告)号：US20170148827A1

公开(公告)日：2017-05-25

申请号：US15427094

申请日：2017-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki SAKAKURA ,  Hideto OHNUMA ,  Hideaki KUWABARA

IPC: H01L27/12 ,  H01L21/768 ,  H01L21/3213

CPC classification number: H01L27/1244 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76886 ,  H01L23/528 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a method for preventing a breaking and poor contact, without increasing the number of steps, thereby forming an integrated circuit with high driving performance and reliability. The present invention applies a photo mask or a reticle each of which is provided with a diffraction grating pattern or with an auxiliary pattern formed of a semi-translucent film having a light intensity reducing function to a photolithography step for forming wires in an overlapping portion of wires. And a conductive film to serve as a lower wire of a two-layer structure is formed, and then, a resist pattern is formed so that a first layer of the lower wire and a second layer narrower than the first layer are formed for relieving a steep step.

公开(公告)号：US20170092776A1

公开(公告)日：2017-03-30

申请号：US15372493

申请日：2016-12-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  H01L29/24 ,  G06K19/077 ,  H01L29/66 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/088

CPC classification number: H01L29/26 ,  G06K19/07758 ,  G11C7/00 ,  G11C19/28 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2223/6677 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel fog nation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US20160118445A1

公开(公告)日：2016-04-28

申请号：US14989195

申请日：2016-01-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masaaki HIROKI ,  Masakazu MURAKAMI ,  Hideaki KUWABARA

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3211 ,  H01L27/32 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5228 ,  H01L51/5234 ,  H01L51/5253 ,  H01L51/5281

Abstract: A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.

Abstract translation: 提供了具有高清晰度，高开口率和高可靠性的发光器件。 本发明利用红色，绿色和蓝色的发光颜色实现全色平板显示器的高清晰度和高开口率，而不依赖于成膜方法和通过形成层叠部分的有机化合物层的沉积精度 21,22通过有意和部分地重叠相邻发光元件的不同有机化合物层。 此外，形成含有氢的保护膜32a，并且用氢终止有机化合物层的缺点，从而实现亮度的提高和可靠性。

公开(公告)号：US20160109852A1

公开(公告)日：2016-04-21

申请号：US14882842

申请日：2015-10-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki KUWABARA ,  Masaaki HIROKI

IPC: G04B19/00 ,  G06F1/16

CPC classification number: G04B19/00 ,  G04G17/045 ,  G04G17/06 ,  G04G17/08 ,  G06F1/163 ,  G06F1/1652 ,  G06F3/044 ,  G06F3/04886 ,  G06F2203/04102 ,  G06F2203/04103 ,  H01L51/0097 ,  H01L51/50 ,  H01M2/1022 ,  H02J7/025

Abstract: A novel electronic device is provided. Alternatively an electronic device of a novel embodiment is provided. An electronic device includes a support and a display portion. The support has a first curved surface. The display portion is provided over the support. The display portion has a top surface and a side surface in contact with at least one side of the top surface. The side surface has a second curved surface. The top surface includes a first display region. The side surface includes a second display region. The first display region and the second display region are continuously provided.

Abstract translation: 提供了一种新颖的电子设备。 或者，提供了一种新颖实施例的电子设备。 电子设备包括支撑件和显示部分。 支架具有第一曲面。 显示部分设置在支撑件上。 显示部分具有与顶表面的至少一侧接触的顶表面和侧表面。 侧表面具有第二弯曲表面。 顶表面包括第一显示区域。 侧表面包括第二显示区域。 连续地设置第一显示区域和第二显示区域。

公开(公告)号：US20150333185A1

公开(公告)日：2015-11-19

申请号：US14810700

申请日：2015-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki KUWABARA ,  Kengo AKIMOTO ,  Toshinari SASAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78696

Abstract: An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.

Abstract translation: 目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。 另一个目的是稳定薄膜晶体管的电特性。 在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。 此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化 ，使得薄膜晶体管的电特性能够稳定。

公开(公告)号：US20150236129A1

公开(公告)日：2015-08-20

申请号：US14696681

申请日：2015-04-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki KUWABARA

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  G02F1/136286 ,  G02F2001/134381 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3262

Abstract: An object is to reduce the number of photomasks used for manufacturing a transistor and manufacturing a display device to less than the conventional one. The display device is manufactured through, in total, three photolithography steps including one photolithography step which serves as both a step of forming a gate electrode and a step of forming an island-like semiconductor layer, one photolithography step of forming a contact hole after a planarization insulating layer is formed, and one photolithography step which serves as both a step of forming a source electrode and a drain electrode and a step of forming a pixel electrode.

Abstract translation: 目的是减少用于制造晶体管的光掩模的数量，并将显示装置制造成小于常规的。 显示装置总共通过三个光刻步骤制造，包括一个光刻步骤，其用作形成栅电极的步骤和形成岛状半导体层的步骤，一个光刻步骤，在一个光刻步骤之后形成接触孔 形成平坦化绝缘层，以及用作形成源电极和漏电极的步骤的一个光刻步骤和形成像素电极的步骤。